| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 03/29/2012 | US20120074523 Controlling microelectronic substrate bowing |
| 03/29/2012 | US20120074425 Growth of reduced dislocation density non-polar gallium nitride |
| 03/29/2012 | US20120074403 METHOD FOR GROWING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE |
| 03/29/2012 | US20120073503 Processing systems and apparatuses having a shaft cover |
| 03/29/2012 | DE102011110410A1 Multilayer film formation method and film deposition apparatus used with the method Multilayer film-formation method and film deposition apparatus used with the method |
| 03/28/2012 | CN102395714A Reaction chamber of an epitaxial reactor and reactor that uses said chamber |
| 03/22/2012 | US20120070962 Freestanding III-Nitride Single-Crystal Substrate and Method of Manufacturing Semiconductor Device Utilizing the Substrate |
| 03/22/2012 | US20120068192 CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B)N ON VARIOUS SUBSTRATES |
| 03/22/2012 | US20120068191 Method of controlling stress in group-iii nitride films deposited on substrates |
| 03/22/2012 | US20120067275 Compound semiconductor device including ain layer of controlled skewness |
| 03/22/2012 | US20120067274 Film forming apparatus, wafer holder, and film forming method |
| 03/21/2012 | EP2431505A2 Equipment for manufacturing silicon carbide single crystal |
| 03/21/2012 | EP2431504A1 Method for manufacturing an organic thin fim transistor using a nano-crystalline diamond film |
| 03/21/2012 | EP2431503A1 Method of manufacturing an organic electroluminescent device or an organic photoelectric receiving device using a nano-crystalline diamond film |
| 03/21/2012 | EP0942459B1 Method of growing nitride semiconductors |
| 03/21/2012 | CN102388162A Gas injectors for cvd systems with the same |
| 03/21/2012 | CN102383193A Free-standing (Al, Ga, In)N and parting method for forming same |
| 03/21/2012 | CN102383192A Growth method of germanium substrate and germanium substrate |
| 03/21/2012 | CN102157353B Method for preparing diamond substrate for high-heat-conductivity integrated circuit |
| 03/21/2012 | CN101409233B Method for depositing group III/V compounds |
| 03/21/2012 | CN101241883B Preparation method of a coating of gallium nitride |
| 03/20/2012 | US8138003 Method of manufacturing nitride semiconductor substrates having a base substrate with parallel trenches |
| 03/20/2012 | US8137461 Piezoelectric substrate, piezoelectric element, liquid discharge head and liquid discharge apparatus |
| 03/15/2012 | US20120060750 Method of forming crystalline oxide semiconductor film |
| 03/14/2012 | CN1958887B Single crystalline A-plane nitride semiconductor wafer having orientation flat |
| 03/14/2012 | CN102376752A Substrate for epitaxial wafer, epitaxial wafer and semiconductor device |
| 03/14/2012 | CN102373505A Microwave preparation method of silicon carbide nano wire |
| 03/13/2012 | US8133322 Apparatus for inverted multi-wafer MOCVD fabrication |
| 03/13/2012 | US8133321 Process for producing silicon carbide single crystal |
| 03/13/2012 | US8133318 Epitaxially coated silicon wafer with 110 orientation and method for producing it |
| 03/08/2012 | WO2012029216A1 Method for manufacturing compound semiconductor |
| 03/07/2012 | EP2426702A1 Method of deposition of chemical compound semiconductor and device |
| 03/06/2012 | US8129747 Semiconductor heterostructures having reduced dislocation pile-ups and related methods |
| 03/01/2012 | WO2011155858A3 Method of graphene manufacturing |
| 03/01/2012 | US20120052656 Dimensional silica-based porous silicon structures and methods of fabrication |
| 03/01/2012 | US20120051996 Diamond material |
| 03/01/2012 | US20120048182 Gallium trichloride injection scheme |
| 03/01/2012 | US20120048181 In-situ growth of engineered defects in graphene by epitaxial reproduction |
| 03/01/2012 | US20120048180 Film-forming manufacturing apparatus and method |
| 02/29/2012 | EP2423991A1 Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities |
| 02/29/2012 | EP2423990A1 Epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices |
| 02/29/2012 | EP2423159A1 Methods of forming alpha and beta tantalum films with controlled and new microstructures |
| 02/29/2012 | EP2423158A1 Methods of forming alpha and beta tantalum films with controlled and new microstructures |
| 02/29/2012 | EP1386348B1 Method of forming a lattice-mismatched semiconductor layer |
| 02/29/2012 | CN101736400B Method for growing GaN-based luminous crystal film by metal organic chemical vapor deposition |
| 02/28/2012 | US8124179 Thin films prepared with gas phase deposition technique |
| 02/28/2012 | CA2505631C Epitaxial growth method and substrate for epitaxial growth |
| 02/23/2012 | WO2012022111A1 Epitaxial wafer tray and supportive and rotational connection apparatus matching same |
| 02/23/2012 | US20120043644 Silicon wafer and manufacturing method |
| 02/22/2012 | EP2421028A1 Method for producing silicon epitaxial wafer |
| 02/22/2012 | EP2420599A1 Substrate, substrate provided with thin film, semiconductor device, and method for manufacturing semiconductor device |
| 02/22/2012 | EP2419552A1 Reaction chamber of an epitaxial reactor and reactor that uses said chamber |
| 02/22/2012 | EP2419306A1 High efficiency epitaxial chemical vapor deposition (cvd) reactor |
| 02/22/2012 | EP2122015B1 Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate |
| 02/22/2012 | EP2083935B1 Method for epitaxial deposition of a monocrystalline Group III-V semiconductor material |
| 02/22/2012 | EP1491662B1 METHOD FOR PREPARING SiC CRYSTAL |
| 02/22/2012 | CN202148369U 排气环 Exhaust ring |
| 02/22/2012 | CN102358955A Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrate |
| 02/21/2012 | US8119505 Method of making group III nitride-based compound semiconductor |
| 02/21/2012 | CA2712356C Aluminum alloy sheet with excellent formability and paint bake hardenability and method for production thereof |
| 02/16/2012 | WO2012020676A1 Polycrystalline aluminum nitride base material for gan-base semiconductor crystal growth and gan-base semiconductor production method using same |
| 02/16/2012 | US20120040511 AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AND METHOD OF PRODUCING SAME |
| 02/16/2012 | US20120039344 Graphene-based saturable absorber devices and methods |
| 02/16/2012 | US20120037068 Composite substrates for direct heating and increased temperature uniformity |
| 02/16/2012 | US20120037067 Cubic silicon carbide film manufacturing method, and cubic silicon carbide film-attached substrate manufacturing method |
| 02/15/2012 | CN102352492A Gas injection device with cooling system |
| 02/14/2012 | CA2540245C Method of producing self-supporting substrates comprising iii-nitrides by means of heteroepitaxy on a sacrificial layer |
| 02/09/2012 | WO2012017723A1 Group iii nitride crystal growing method |
| 02/09/2012 | US20120035351 Volatile Imidazoles and Group 2 Imidazole Based Metal Precursors |
| 02/09/2012 | US20120034149 GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME |
| 02/09/2012 | US20120031330 Semiconductor substrate manufacturing apparatus |
| 02/09/2012 | US20120031324 Method for growing group iii nitride crystal |
| 02/08/2012 | EP2414567A1 Semipolar semiconductor crystal and method for producing it |
| 02/08/2012 | CN102347258A Base used for semiconductor epitaxial system |
| 02/08/2012 | CN102345169A Array type diamond film and method for making the same |
| 02/08/2012 | CN102345162A One-dimensional axial type nano zinc oxide / zinc sulfide heterojunction and preparation method thereof |
| 02/08/2012 | CN101451237B 具有多个等离子体反应区域的包括多个处理平台的等离子体反应室 A plasma reaction chamber comprising a plurality of processing platforms having a plurality of plasma reaction zone |
| 02/07/2012 | US8110848 Substrate for epitaxy and method of preparing the same |
| 02/02/2012 | WO2012013887A1 Vitreous silica crucible having a polygonal opening, and method for manufacturing same |
| 02/02/2012 | US20120025195 Confined Lateral Growth of Crystalline Material |
| 02/02/2012 | US20120024223 Thin films and methods of making them using cyclohexasilane |
| 02/01/2012 | CN102337587A Method of growing SiC single crystal and SiC single crystal grown by same |
| 02/01/2012 | CN101967680B 一种在氧化镁衬底上制备单斜晶型氧化镓单晶薄膜的方法 A magnesium substrate prepared monoclinic gallium oxide single crystal thin film method |
| 02/01/2012 | CN101405437B 应用混合芯构件制备高纯硅棒的装置和方法 Hybrid core member preparation of high purity silicon rod apparatus and method |
| 02/01/2012 | CN101311357B 一种氧化铟单晶外延薄膜的制备方法 A method for preparing a single crystal epitaxial thin film of indium oxide |
| 01/31/2012 | US8105921 Gallium nitride materials and methods |
| 01/26/2012 | WO2012012457A2 Polycrystalline silicon production |
| 01/26/2012 | US20120021173 Base material with single-crystal silicon carbide film, method of producing single-crystal silicon carbide film, and method of producing base material with single-crystal silicon carbide film |
| 01/26/2012 | US20120021163 Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy |
| 01/26/2012 | US20120017825 Method associated with a crystalline composition and wafer |
| 01/25/2012 | EP2408952A1 Mocvd reactor having a ceiling panel coupled locally differently to a heat dissipation member |
| 01/25/2012 | CN102332510A Method for growing high-antistatic LED (light-emitting diode) by adopting metal organic compound vapor phase epitaxy technology |
| 01/25/2012 | CN102330147A Novel epitaxial device for producing silicon chips and system thereof |
| 01/25/2012 | CN101586229B Magnetron sputtering apparatus and film manufacturing method |
| 01/25/2012 | CN101555627B Laser peeling method of gallium nitride-based epitaxial film |
| 01/25/2012 | CN101550592B Method for preparing iron silicide nano wires |
| 01/25/2012 | CN101319358B 单晶金刚石 Single crystal diamond |
| 01/24/2012 | US8101150 Control of carbon nanotube diameter using CVD or PECVD growth |
| 01/19/2012 | US20120012049 Hvpe chamber |
| 01/19/2012 | US20120012048 Fabrication of substrates with a useful layer of monocrystalline semiconductor material |