Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
07/2012
07/11/2012CN102560632A Solid solution inducing layer for weak epitaxial growth of non-planar phthalocyanin thin film
07/11/2012CN102560414A Method for preparing graphene on 3C-SiC substrate
07/11/2012CN101681813B Nitride nanowires and method of producing the same
07/10/2012US8216537 Silicon-germanium hydrides and methods for making and using same
07/10/2012US8216375 Slab cross flow CVD reactor
07/10/2012US8216368 Method of fabricating an epitaxially grown layer
07/10/2012US8216367 Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate
07/10/2012US8216366 Method for manufacturing a cubic silicon carbide single crystal thin film and semiconductor device based on the cubic silicon carbide single crystal thin film
07/10/2012US8216365 Method for producing a semiconductor crystal
07/10/2012US8216364 System and method for low-power nanotube growth using direct resistive heating
07/10/2012CA2678488C Method of producing a group iii nitride crystal
07/05/2012US20120167825 Halogen assisted physical vapor transport method for silicon carbide growth
07/05/2012US20120167820 Method for making flat substrate from incremental-width nanorods
07/05/2012US20120167819 Method for reconstructing a semiconductor template
07/04/2012EP2472568A1 Silicon carbide epitaxial wafer and manufacturing method therefor
07/04/2012EP2472567A2 Semiconductor layer
07/04/2012EP2470694A1 Doped transparent conductive oxide
07/04/2012EP2470684A1 Cvd method and cvd reactor
07/04/2012EP1386348B9 Method of forming a lattice-mismatched semiconductor layer
07/04/2012CN1894771B Non-polarity (Al, B, Inc, Ga) N Quantum pit
07/04/2012CN102549202A Large area deposition of graphene hetero-epitaxial growth, and products including the same
07/04/2012CN102544356A Method for preparing heating layer of phase change memory
07/04/2012CN102543787A Method for monitoring the growing of the semiconductor layer
07/04/2012CN102534795A Apparatus and method for manufacturing silicon carbide single crystal
07/04/2012CN102534770A Apparatus for manufacturing silicon carbide single crystal
07/04/2012CN102534769A Method for growing gallium nitride epitaxial structure on patterned substrate
07/04/2012CN102534768A Method for preparing silicon-based gallium arsenide material
07/04/2012CN102534767A Na-mixing method for growing p-type ZnO single crystal film
07/04/2012CN102534766A Device for quickly and continuously preparing large-size graphene film and application thereof
07/04/2012CN102534765A Control synthesis method for three-dimensional flower-shaped ZnO/ZnS composite structure
07/04/2012CN102534764A Method for epitaxially growing type-II superlattice narrow-spectrum infrared photoelectric detector material
07/04/2012CN102534544A Nanometer carbon pipe composite material and manufacturing method thereof
07/04/2012CN102206856B Method for growing zinc oxide material by modulating temperature periodically
07/04/2012CN102174713B Group iii-v nitride-based semiconductor substrate, its manufacturing method, and group iii-v nitride-based semiconductor
07/04/2012CN101985744B Method for preparing monocrystalline cubic carbon nitride thin film
07/04/2012CN101814428B Method for producing epitaxially coated silicon wafers
07/04/2012CN101605930B N-type conductive aluminum nitride semiconductor crystal and method for producing the same
07/04/2012CN101517759B Method for manufacturing group iii nitride compound semiconductor light-emitting device, group iii nitride compound semiconductor light-emitting device, and lamp
07/04/2012CN101459215B Method for manufacturing gallium nitride single crystalline substrate using self-split
07/04/2012CN101319400B Method for Fe doped growing GaFeN dilution magnetic semiconductor and uses thereof
07/04/2012CN101256940B Gas supply system and integrated unit for semiconductor manufacturing device
07/03/2012US8212259 III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates
06/2012
06/28/2012WO2012084750A1 Dislocation engineering in single crystal synthetic diamond material
06/28/2012US20120162766 Polarizer, display device and manufacturing mehtod of polarizer
06/28/2012US20120161287 METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION
06/28/2012US20120160325 Method of manufacturing silicon thin film, method of manufacturing silicon thin-film photovoltaic cell, silicon thin film, and silicon thin-film photovoltaic cell
06/28/2012US20120160157 Method of manufacturing light emitting diode
06/28/2012CA2821618A1 Dislocation engineering in single crystal synthetic diamond material
06/27/2012CN102517633A Scaffold for graphene growing, and method thereof
06/27/2012CN102517632A Method for preparing epitaxial Gd2-xLaxO gate dielectric film by MOCVD (Metal Organic Chemical Vapor Deposition)
06/27/2012CN102517631A Method of manufacturing substrates having improved carrier lifetimes
06/27/2012CN102061518B Precise control method for growth starting temperature of mercury cadmium telluride liquid phase epitaxy system
06/27/2012CN101353813B Free-standing (Al, Ga, In)N and parting method for forming same
06/26/2012US8207054 Group III nitride semiconductor substrate, substrate for group III nitride semiconductor device, and methods of making same
06/26/2012CA2532362C Ultrahard diamonds and method of making thereof
06/21/2012WO2012082729A1 Thermal expansion engineering for polycrystalline aluminum nitride sintered bodies, and application to the manufacture of semi-conductors
06/21/2012WO2012081670A1 Process for production of aluminum-containing iii nitride single crystal
06/21/2012WO2012079485A1 Substrate bearing apparatus and substrate processing device using same
06/21/2012US20120156819 Gallium nitride-based led fabrication with pvd-formed aluminum nitride buffer layer
06/21/2012US20120153440 Epitaxial substrate for electronic device and method of producing the same
06/21/2012US20120153298 Epitaxial growth system for fast heating and cooling
06/21/2012US20120152166 Apparatus for manufacturing silicon carbide single crystal
06/20/2012EP2465980A2 Apparatus and method for manufacturing silicon carbide single crystal
06/20/2012EP2465979A2 Apparatus for manufacturing silicon carbide single crystal
06/20/2012EP2465625A1 Method and device for oroducing thin silicon rods
06/20/2012CN202282351U 外延片用衬底、外延片及半导体器件 Epitaxial wafer substrates, epitaxial wafers and semiconductor devices
06/20/2012CN102505141A Graphene preparation method based on Cu film assisted annealing
06/20/2012CN102505140A Graphene preparation method based on auxiliary annealing of Ni film
06/20/2012CN102505113A Preparation method of large-area graphene based on Cl2 reaction
06/20/2012CN102021649B Chemical vapor deposition method for preparing diamond single crystal by adding N2O gas
06/20/2012CN101770971B Wafer bearing device
06/13/2012EP2462262A2 Large area deposition of graphene hetero-epitaxial growth, and products including the same
06/13/2012CN102492992A GaN crystal substrate and method of manufacturing the same, and method of manufacturing semiconductor device
06/13/2012CN102492986A Selective area hetero-epitaxial substrate structure, preparation thereof and epitaxial layer growing method
06/13/2012CN102492985A Method for isoepitaxial growth of SrTiO3 film by using MBE
06/13/2012CN102492938A Single-contact rotation-revolution base boat
06/13/2012CN102492935A Treatment method of silicon substrate for preparing GaN epitaxy material with low dislocation density
06/13/2012CN102108547B Multi-substrate large-size hydride vapor phase epitaxy method and device
06/13/2012CN101499415B Method for producing group III nitride-based compound semiconductor, wafer, and group III nitride-based compound semiconductor device
06/13/2012CN101319376B Rare earth doping nano SrAl2O4 material and method for producing the same
06/12/2012US8198177 AlxInyGal-x-yN mixture crystal substrate, method of growing same and method of producing same
06/12/2012US8197598 Method for manufacturing iron silicide nano-wires
06/12/2012US8197597 Gallium trichloride injection scheme
06/12/2012CA2512731C High-speed diamond growth using a microwave plasma in pulsed mode
06/07/2012US20120142173 Manufacturing method of silicon carbide single crystal
06/07/2012US20120141836 Granular perpendicular media interlayer for a storage device
06/07/2012US20120138952 High pressure chemical vapor deposition apparatuses, methods, and compositions produced therewith
06/06/2012EP2460914A1 Group iii nitride crystal and production method thereof
06/06/2012EP2196565B1 Method for producing sic epitaxial substrate
06/06/2012CN102485974A Method for direct growth of monocrystalline silicon through CVD (chemical vapor deposition) reaction
06/06/2012CN101410950B Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
06/05/2012US8192713 Method of incorporating a mark in CVD diamond
05/2012
05/31/2012WO2012069530A1 Methods for forming group iii-nitride materials and structures formed by such methods
05/31/2012US20120132962 Method of Manufacturing Semiconductor Device and Semiconductor Device
05/30/2012DE202012001810U1 Vorrichtung zum Verarbeiten von Substraten An apparatus for processing substrates
05/30/2012CN202259398U Luminous device
05/30/2012CN102484181A Group-III nitride crystal substrate, group-III nitride crystal substrate with epitaxial layer, semiconductor device, and method for manufacturing same
05/30/2012CN102482796A 掺杂的透明导电氧化物 A transparent conductive oxide doped
05/30/2012CN102479717A 硅锗外延层的形成方法 The method for forming a silicon-germanium epitaxial layer
05/30/2012CN102477582A (In, Mn) As nano-wires and preparation method thereof
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