Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
08/2012
08/30/2012US20120220107 Substrate processing apparatus, wafer holder, and method of manufacturing semiconductor device
08/30/2012US20120217618 Silicon-Germanium Hydrides and Methods for Making and Using Same
08/30/2012US20120216743 Attachment for substrates having different diameters, substrate processing apparatus, and method of manufacturing substrate or semiconductor device
08/29/2012CN102650074A Structure and method for preparing large-sized wide-bandgap monocrystal film
08/29/2012CN101962803B Heteroepitaxial growth method for high-quality monocrystalline thick-film material
08/29/2012CN101925979B Method for manufacturing III nitride semiconductor, and method for manufacturing III nitride semiconductor light emitting element
08/29/2012CN101514484B Porous material substrate used in GaN film grown by HVPE method and method thereof
08/29/2012CN101443487B Source container of a VPE reactor
08/29/2012CN101311336B Film formation apparatus and method for using the same
08/28/2012US8252112 High speed thin film deposition via pre-selected intermediate
08/23/2012WO2012110642A1 Iii-v semiconductor structures with diminished pit defects and methods for forming the same
08/23/2012US20120210932 Low-temperature selective epitaxial growth of silicon for device integration
08/22/2012EP2488682A1 High growth rate deposition for group iii/v materials
08/22/2012EP1607498B1 Method for forming oxide coating film, oxide coating film and coating film structure
08/22/2012EP1509949B1 Formation of lattice-tuning semiconductor substrates
08/22/2012CN202390571U Hydride vapor phase epitaxy device
08/22/2012CN102644119A Treatment method of porous gallium nitride substrate and growth method of gallium nitride film
08/22/2012CN102644106A Method for controlling uniform-thickness growth of epitaxial layer of single-wafer furnace
08/22/2012CN102212877B MOCVD (Metal-organic Chemical Vapor Deposition) system with multiple extensional reaction cavities and operation method thereof
08/22/2012CN102127807B Method for preparing ternary-component AlxGaI-xN nanocone
08/22/2012CN101256937B Method and apparatus for controlling gas flow to a processing chamber
08/16/2012US20120205623 NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES
08/15/2012EP2486174A1 Multi-rotation epitaxial growth apparatus and reactors incorporating same
08/15/2012CN102639764A Process for producing single-crystal aluminum nitride
08/15/2012CN102639761A Multi-rotation epitaxial growth apparatus and reactors incorporating same
08/15/2012CN102634849A Method for growth of gan single crystal, method for preparation of gan substrate, process for producing gan-based element, and gan-based element
08/15/2012CN101600819B Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate
08/14/2012US8241422 Gallium nitride single crystal growing method and gallium nitride single crystal
08/09/2012US20120202352 Method of and apparatus for manufacturing semiconductor device
08/09/2012DE102011010751A1 Performing epitaxy process, comprises arranging substrate exhibiting semiconductor surfaces on carrier, heating semiconductor surfaces to temperature provided for epitaxy and epitaxially growing semiconductor material
08/09/2012DE102011010422A1 Neuartige synthetische Diamanten und diamantartige Materialien und Verfahren und Vorrichtung zu ihrer kontinuierlichen Herstellung Novel synthetic diamonds and diamond-like materials and method and apparatus for the continuous production of their
08/08/2012EP2484816A1 Method for production of laminate
08/08/2012CN202369637U Novel plasma enhanced chemical vapor deposition (PECVD) cooling bench
08/08/2012CN102157903B Epitaxial growth method of W type antimonide class II quantum well
08/08/2012CN101724896B Method for growing germanium-silicon epitaxies in nonselective way
08/08/2012CN101688307B Device for coating substrates disposed on a susceptor
08/07/2012US8236103 Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer
08/07/2012US8236097 Composition and method for low temperature deposition of silicon-containing films
08/07/2012CA2712148C Method for producing a laminated body having a1-based group-iii nitride single crystal layer, laminated body produced by the method, method for producing a1-based group-iii nitride single crystal substrate employing the laminated body, and aluminum nitride single crystal substrate
08/02/2012DE102011003409A1 Producing germanium layer on lattice mismatched substrate, useful for producing integrated semiconductor components, comprises depositing germanium on substrate, etching back, and depositing further germanium
08/01/2012EP2481501A2 Synthesis method of graphitic shell-alloy core heterostructure nanowires and longitudinal metal oxide heterostructure nanowires, and reversible synthesis method between nanowires thereof
08/01/2012EP2481082A2 Hybrid gas injector
08/01/2012EP1393352B1 Semiconductor device, semiconductor layer and production method thereof
08/01/2012CN102618923A Quasi-reduced-pressure epitaxial growth method
08/01/2012CN102618922A Method for epitaxially growing GaAs thin film on Si substrate
08/01/2012CN102618921A Double-exhaust flat-plate epitaxial furnace
07/2012
07/31/2012US8231728 Epitaxial growth process
07/31/2012US8231724 Reactor for polycrystalline silicon and polycrystalline silicon production method
07/26/2012US20120187445 Template, method for manufacturing the template, and method for manufacturing vertical type nitride-based semiconductor light emitting device using the template
07/26/2012US20120187444 Template, method for manufacturing the template and method for manufacturing vertical type nitride-based semiconductor light emitting device using the template
07/25/2012CN102605422A Mask for growth of epitaxial structure and usage thereof
07/25/2012CN102130223B Method for coarsening surface of GaN-based LED epitaxial wafer
07/25/2012CN102041476B Method for preparing cobalt titanate film by dual-target magnetron sputtering method
07/25/2012CN102011103B Chemisorption method for preparing carbon nitride film
07/25/2012CN101824647B Automatic process control method of PECVD film deposition
07/25/2012CN101400835B Method for continual preparation of polycrystalline silicon using a fluidized bed reactor
07/24/2012US8227792 Relaxed low-defect SGOI for strained SI CMOS applications
07/24/2012US8227322 Methods of growing nitride-based film using varying pulses
07/24/2012US8226767 Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof
07/19/2012US20120183809 Production Method of a Layered Body
07/19/2012US20120183767 Hexagonal reo template buffer for iii-n layers on silicon
07/19/2012US20120183728 Methods for the growth of three-dimensional nanorod networks
07/19/2012US20120181547 High voltage switching devices and process for forming same
07/19/2012US20120180716 Methods for epitaxial silicon growth
07/18/2012EP2477237A1 Group-iii nitride crystal substrate, group-iii nitride crystal substrate with epitaxial layer, semiconductor device, and method for manufacturing same
07/18/2012EP2476778A1 Susceptor.
07/18/2012CN102597340A Method for producing laminate
07/18/2012CN102597307A CVD method and CVD reactor
07/18/2012CN102593274A Method by adopting impulse airflow method to grow gallium phosphide (GaP) current extension layer
07/18/2012CN102586869A Three-dimensional grapheme tube and preparation method thereof
07/18/2012CN102586868A Preparation method of large-size single-crystal graphene and continuous thin film thereof
07/18/2012CN102586867A Method for preparing zinc oxide single crystal film by using iron oxide buffer layer
07/18/2012CN102583331A Preparation method for large-area graphene based on Ni film auxiliary annealing and Cl2 reaction
07/18/2012CN102181923B Vapor phase epitaxy device and vapor phase epitaxy method
07/18/2012CN102127808B Independent metal source system of semiconductor growth equipment
07/18/2012CN101443476B High crystalline quality synthetic diamond
07/18/2012CN101314867B Slit valve
07/18/2012CN101257079B Semiconductor layer
07/17/2012US8222570 System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
07/17/2012US8221549 Silicon carbide single crystal wafer and producing method thereof
07/17/2012US8221548 Diamond semiconductor element and process for producing the same
07/17/2012US8221547 Nitride semiconductor substrate and method for forming the same
07/12/2012WO2012093601A1 EPITAXIAL GROWTH SUBSTRATE AND GaN LED DEVICE
07/12/2012US20120178267 Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride
07/12/2012US20120177902 Multiferroics that are both ferroelectric and ferromagnetic at room temperature
07/12/2012US20120174859 Method and apparatus for producing epitaxial wafer
07/12/2012US20120174858 Base and method for making epitaxial structure using the same
07/12/2012US20120174856 Method for making epitaxial structure
07/12/2012US20120174855 Method for making epitaxial structure
07/11/2012CN202332817U 可降低外延时自掺杂的外延片衬底、外延片及半导体器件 Can reduce the self-doped epitaxial wafer substrates, epitaxial wafers and semiconductor devices
07/11/2012CN1871764B Method and apparatus for bi-planar backward wave oscillator
07/11/2012CN102576666A Silicon carbide epitaxial wafer and manufacturing method therefor
07/11/2012CN102575379A Method for making fancy orange coloured single crystal cvd diamond and product obtained
07/11/2012CN102575378A High growth rate deposition for group III/V materials
07/11/2012CN102560676A Method for performing GaN single crystal growth by using thinned and bonded structure
07/11/2012CN102560675A Nonpolar InN film growing on LiGao2 substrate and preparation method of nonpolar InN film
07/11/2012CN102560636A Substrate loading device and substrate processing device applying same
07/11/2012CN102560635A Preparation method of vanadium trioxide film
07/11/2012CN102560634A Method for growing InGaAs film on GaAs substrate
07/11/2012CN102560633A Method for depositing group III/V compounds
1 ... 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 ... 134