Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
11/2012
11/14/2012CN102201332B Preparation method of GaN substrate
11/14/2012CN102181922B Quartz container used for isothermal crystal vapor phase epitaxy process
11/14/2012CN102169820B Method for preparing GaAs imaging substrate distributed in different stress densities
11/14/2012CN101698962B Method for accurately controlling growth and characterization of components of quaternary semiconductor direct bandgap material
11/14/2012CN101378003B Alternate gas delivery and evacuation system for plasma processing apparatuses
11/08/2012US20120282443 Single-crystal substrate, group-iii nitride crystal obtained using the same, and process for producing group-iii nitride crystal
11/07/2012CN102770588A CVD single crystal diamond material
11/07/2012CN102769081A Structure using graphite alkene as buffer layer epitaxy GaN (gallium nitride) and preparation method of structure
11/07/2012CN102766903A Device, system and method for controlling gas concentration
11/07/2012CN102766902A Processing chamber device and substrate processing equipment with processing chamber device
11/07/2012CN101495675B Chemical vapor deposition reactor having multiple inlets
11/07/2012CN101250752B Group iii nitride semiconductor substrate
11/06/2012US8303924 Production method for a low-dislocation bulk AlN single crystal and low-dislocation monocrystalline AlN substrate
11/01/2012WO2012145872A1 Thermal oxidation system and method for preventing liquid water accumulation
11/01/2012US20120272892 Metal-Organic Vapor Phase Epitaxy System and Process
10/2012
10/31/2012EP2516701A1 Synthetic cvd diamond
10/31/2012EP2516700A1 Single crystal diamond material
10/31/2012EP2516692A1 Method for coating a substrate with aluminum-doped zinc oxide
10/31/2012CN202509157U Ingaas film
10/31/2012CN102758191A Apparatus and method for treating substrate
10/26/2012WO2012144614A1 Epitaxial silicon carbide single-crystal substrate and process for producing same
10/26/2012WO2012143262A1 Device and method for large-scale deposition of semi-conductor layers with gas-separated hcl-feeding
10/26/2012WO2012143257A1 Device and method for depositing semi-conductor layers while adding hcl for surpressing parasitic growth
10/25/2012US20120267606 Group iii nitride crystal substrate, epilayer-containing group iii nitride crystal substrate, semiconductor device and method of manufacturing the same
10/25/2012DE10102315B4 Verfahren zum Herstellen von Halbleiterbauelementen und Zwischenprodukt bei diesen Verfahren A method of manufacturing semiconductor devices and an intermediate in this process
10/24/2012EP2514857A1 SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
10/24/2012EP2514720A1 Preparation method of high density zinc oxide nanometer granules
10/24/2012CN102751383A Method for preparing epitaxial silicon thin film for silicon-based heterojunction solar battery
10/24/2012CN102747418A High-temperature large area silicon carbide epitaxial growth device and treatment method
10/24/2012CN102163650B Growth reactor for spherical semiconductor photovoltaic device
10/18/2012WO2012139714A1 Evaporator cell closure device for a coating plant
10/18/2012WO2012139484A1 Tantalum-material multilevel distillation crucible and distillation process
10/17/2012CN202492574U Support and support assembly for growing of graphene and graphene film growing assembly
10/17/2012CN102741446A Method for coating a substrate with aluminum-doped zinc oxide
10/17/2012CN102732957A Doped semiconductor growth equipment and method
10/17/2012CN102732956A MO source supply system for GaN epitaxy of MOCVD equipment
10/16/2012US8287645 Production process for high purity polycrystal silicon and production apparatus for the same
10/11/2012WO2012137949A1 Method for producing nitride semiconductor, nitride semiconductor, and method for forming group iii-v nitride film
10/11/2012US20120258308 Single-crystal apatite nanowires sheathed in graphitic shells and synthesis method thereof
10/11/2012US20120258286 Template for Epitaxial Growth and Process for Producing Same
10/11/2012US20120255486 Cleaning apparatus and method, and film growth reaction apparatus and method
10/11/2012DE102011016366A1 Verfahren zur Herstellung eines III/V-Si-Templats A process for producing a III / V-Si template
10/10/2012EP2508656A1 Process for producing single-crystal aluminum nitride
10/10/2012EP2508654A1 Vapor deposition system
10/10/2012EP2508471A2 Single-crystal apatite nanowires sheathed in graphitic shells and synthesis method thereof
10/10/2012CN102719888A A preparation method for a nanometer-microstructure substrate
10/10/2012CN102719887A Method for growing high-quality gallium nitride epitaxial film on basis of gallium nitride substrate
10/10/2012CN101871098B Growing method of high-crystal quality high-resistance GaN epitaxial layer
10/10/2012CN101423977B Susceptor for epitaxial layer forming apparatus, epitaxial layer forming apparatus, epitaxial wafer, and method of manufacturing epitaxial wafer
10/09/2012US8282737 Substrate processing apparatus and method for manufacturing a semiconductor device
10/09/2012US8282733 Manufacturing method of semiconductor apparatus
10/04/2012WO2012131194A1 Array of metallic nanotubes
10/04/2012US20120252229 System and Process For Heating Semiconductor Wafers by Optimizing Absorption of Electromagnetic Energy
10/04/2012US20120251428 Crystal growing apparatus, method for manufacturing nitride compound semiconductor crystal, and nitride compound semiconductor crystal
10/04/2012US20120248463 Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby
10/04/2012US20120247386 Method and apparatus for the selective deposition of epitaxial germanium stressor alloys
10/03/2012CN202465868U Graphite disk and reaction chamber with same
10/03/2012CN102714143A 外延片以及半导体元件 Epitaxial wafers and semiconductor element
10/03/2012CN102703974A Sapphire patterned substrate for improving quality of GaN film and production method of sapphire patterned substrate
10/03/2012CN102041554B Method for producing N-doped SiC nanowires with field emission properties
10/03/2012CN101528991B Sapphire substrate, nitride semiconductor luminescent element using the sapphire substrate, and method for manufacturing the nitride semiconductor luminescent element
09/2012
09/27/2012US20120240845 Production method of an aluminum nitride single crystal
09/26/2012CN102694087A Electronic device and method of manufacturing the same
09/26/2012CN102691102A Method for manufacturing substrate of sapphire nanometer bowl array pattern
09/26/2012CN102691100A Process chamber device and epitaxial equipment with it
09/26/2012CN102115878B Preparation method of single crystal cubic carbon nitride thin film
09/25/2012US8273146 Wafer and epitaxial wafer, and manufacturing processes therefor
09/20/2012US20120235163 Semiconductor substrate and method for producing semiconductor substrate
09/20/2012US20120235116 Light emitting diode with enhanced quantum efficiency and method of fabrication
09/20/2012US20120234230 Substrate temperature uniformity during rapid substrate heating
09/20/2012US20120234229 Substrate support assembly for thin film deposition systems
09/20/2012DE102011014311A1 Introducing a process gas into a process space of a process chamber, by warming a process chamber, a substrate received in the process chamber and/or a process chamber-heating device, and heating inlet tube over the process chamber
09/20/2012DE102011005557A1 Operating a vacuum coating system for producing thin film solar cells, comprises purifying a coating chamber using a cleaning gas, and depositing a diffusion barrier layer comprising amorphous silicon carbide on coating chamber walls
09/19/2012EP2500451A1 Method for producing laminate
09/19/2012CN102677164A Tray, chamber device and epitaxy equipment
09/19/2012CN102208331B Crystal growth method and substrate manufacturing method
09/18/2012US8268076 SOI wafers having MxOy oxide layers on a substrate wafer and an amorphous interlayer adjacent the substrate wafer
09/18/2012US8268075 Method of producing zinc oxide semiconductor crystal
09/13/2012WO2012121717A1 Graphene formation
09/13/2012WO2012121154A1 Base, substrate with gallium nitride crystal layer, and process for producing same
09/13/2012US20120228627 Method for producing compound semiconductor crystal, method for producing electronic device, and semiconductor wafer
09/13/2012US20120227667 Substrate carrier with multiple emissivity coefficients for thin film processing
09/13/2012DE102009022224B4 Verfahren zur Herstellung von epitaxierten Siliciumscheiben Process for producing epitaxially coated silicon wafers
09/12/2012CN102666944A Synthetic cvd diamond
09/11/2012US8263984 Process for making a GaN substrate
09/11/2012US8263424 Opto-electronic and electronic devices using an N-face or M-plane gallium nitride substrate prepared via ammonothermal growth
09/11/2012US8262796 β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
09/07/2012WO2012116477A1 Preparation method of high density zinc oxide nanometer granules
09/06/2012US20120225004 Halosilane Assisted PVT Growth of SiC
09/05/2012EP2495358A1 Methods of forming III/V semiconductor materials, and semiconductor structures formed using such methods
09/05/2012CN202415739U Light emitting diode (LED) epitaxial growth device
09/05/2012CN202415738U Gas inlet device of silicon epitaxy equipment
09/05/2012CN102656297A SiC epitaxial wafer and method for manufacturing same
09/05/2012CN102653885A Method for preparing structured graphene on 3C-SiC substrate
09/05/2012CN102653884A A method of processing substrate holder material
09/05/2012CN102653883A Substrate processing apparatus, and method of manufacturing substrate
09/05/2012CN101234389B Collector unit for semiconductor process
09/05/2012CN101159228B Processing gas supplying mechanism, supplying method and gas processing unit
09/04/2012US8258051 Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal
09/04/2012US8257491 Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials
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