| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
|---|
| 10/01/2013 | US8545626 Nitride semiconductor crystal and its production method |
| 09/26/2013 | WO2013141099A1 Self-supporting gallium nitride crystal substrate and method for manufacturing same |
| 09/26/2013 | WO2013139887A1 Method for producing iii-n single crystals, and iii-n single crystal |
| 09/26/2013 | US20130247817 Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and method for fabricating a nitride semiconductor template |
| 09/26/2013 | DE102012204553A1 Preparing template, comprises growing crystalline III-N-material on substrate, and depositing intermediate layer on substrate as mask material or in crystalline III-N material, where intermediate layer includes III-N-nucleation layer |
| 09/26/2013 | DE102012204551A1 Preparing template comprising substrate and crystal layer made of e.g. aluminum nitride, comprises e.g. performing crystal growth of material on substrate at crystal growth temperature, changing to second temperature and continuing growth |
| 09/25/2013 | EP2642001A1 Method for producing epitaxial silicon carbide single crystal substrate |
| 09/25/2013 | EP2641996A1 Method for growing magnesium-zinc-oxide-based crystal |
| 09/25/2013 | CN103325896A Gallium nitride-based LED (Light Emitting Diode) epitaxial growth method improving light emitting efficiency |
| 09/25/2013 | CN103320865A Shower head and vapor deposition equipment |
| 09/25/2013 | CN103320852A Reaction cavity used for epitaxial deposition |
| 09/25/2013 | CN103320771A Shower head and vapor deposition equipment |
| 09/25/2013 | CN103320764A Method for preparing InN semiconductor device based on a-side GaN buffer layer on a-side 6H-SiC substrate |
| 09/25/2013 | CN102583331B Preparation method for large-area graphene based on Ni film auxiliary annealing and Cl2 reaction |
| 09/25/2013 | CN102296361B Preparation method of single crystal graphene |
| 09/25/2013 | CN102208497B Preparation method of semi-polarity or nonpolar GaN composite substrate on silicon substrate |
| 09/25/2013 | CN102041551B Base material for growing single crystal diamond and method for producing single crystal diamond substrate |
| 09/25/2013 | CN101657569B Method and device for the production of a compound semiconductor material by means of gas phase epitaxy |
| 09/24/2013 | US8541292 Group III nitride semiconductor epitaxial substrate and method for manufacturing the same |
| 09/24/2013 | US8540817 Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of manufacturing an epitaxial wafer, Si(1-v-w-x)CwAlxNv substrate, and epitaxial wafer |
| 09/19/2013 | US20130240876 Non-polar plane of wurtzite structure material |
| 09/19/2013 | US20130239880 Base material for growing single crystal diamond and method for producing single crystal diamond substrate |
| 09/19/2013 | US20130239879 Load lock having secondary isolation chamber |
| 09/19/2013 | US20130239615 Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system |
| 09/18/2013 | CN103313936A Graphene formation |
| 09/18/2013 | CN103311106A Preparation method for silica-based gallium arsenide material with high quality and low surface roughness |
| 09/18/2013 | CN103305917A Method for manufacturing GaN template substrate and GaN template substrate |
| 09/18/2013 | CN103305909A Preparation method of composite substrate for GaN growth |
| 09/18/2013 | CN103305908A Composite substrate for GaN growth |
| 09/18/2013 | CN103305907A Reaction chamber for epitaxial deposition |
| 09/18/2013 | CN103305906A Reaction chamber of epitaxial deposition nitriding III-group or nitriding II--group material |
| 09/18/2013 | CN102304763B Continuous high temperature chemical vapor deposition (HTCVD) method silicon carbide crystal growing device |
| 09/17/2013 | US8536030 Semipolar semiconductor crystal and method for manufacturing the same |
| 09/17/2013 | US8535635 Method of manufacturing carbon cylindrical structures and biopolymer detection device |
| 09/12/2013 | US20130233238 Methods and Mask Structures for Substantially Defect-Free Epitaxial Growth |
| 09/11/2013 | EP2636075A1 Iii-nitride layer grown on a substrate |
| 09/11/2013 | EP2635726A1 Method of forming a composite substrate. |
| 09/11/2013 | CN203187782U Device for preparing single crystal graphene |
| 09/11/2013 | CN203187778U Air inlet plug-in component for low-pressure peripheral equipment |
| 09/11/2013 | CN1956145B Semiconductor process chamber |
| 09/11/2013 | CN103290481A Superfine single crystal Si nanowire and preparation method thereof |
| 09/11/2013 | CN102174712B (al, in, ga)n substrate, manufacturing method thereof, microelectronic or opto-electronic device product |
| 09/11/2013 | CN101887935B Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
| 09/10/2013 | US8529699 Method of growing zinc-oxide-based semiconductor and method of manufacturing semiconductor light emitting device |
| 09/10/2013 | US8529697 Growth of nitride semiconductor crystals |
| 09/05/2013 | DE102012203421A1 Halbleiterbauelement mit einer orientierten Schicht undVerfahren zu seiner Herstellung A semiconductor device comprising an oriented layer undVerfahren for its preparation |
| 09/05/2013 | DE102007010286B4 Verfahren zum Herstellen eines Verbindungshalbleiterwerkstoffs, einer III-N-Schicht oder eines III-N-Bulkkristalls, Reaktor zur Herstellung des Verbindungshalbleiterwerkstoffs, Verbindungshalbleiterwerkstoff, III-N-Bulkkristall und III-N-Kristallschicht A method of manufacturing a compound semiconductor material, a III-N layer or a III-N bulk crystal, reactor for producing the compound semiconductor material, compound semiconductor materials, III-N bulk crystal and III-N crystal layer |
| 09/04/2013 | EP2634294A1 Method for manufacturing optical element |
| 09/04/2013 | CN203174221U Device for rapidly preparing crystal epitaxial films |
| 09/04/2013 | CN103276444A Dual heating vapor phase epitaxial growth system |
| 09/04/2013 | CN103276443A Apparatus for rapidly preparing crystal epitaxial film, and method thereof |
| 09/04/2013 | CN101962806B Preparation method of flexible cold cathode material |
| 09/03/2013 | US8525230 Field-effect transistor with compositionally graded nitride layer on a silicaon substrate |
| 09/03/2013 | US8524582 Silicon-germanium hydrides and methods for making and using same |
| 09/03/2013 | US8524382 Oxide substrate and manufacturing method therefor |
| 08/29/2013 | US20130220214 Base material for growing single crystal diamond and method for producing single crystal diamond substrate |
| 08/28/2013 | EP2630277A1 Method for producing a low dislocation density iii-nitride crystal |
| 08/28/2013 | CN203159741U Hydride vapour phase epitaxy equipment |
| 08/28/2013 | CN103266309A Apparatus and methods for deposition reactors |
| 08/27/2013 | US8518806 Method for producing group III nitride-based compound semiconductor, wafer including group III nitride-based compound semiconductor, and group III nitrided-based compound semiconductor device |
| 08/27/2013 | US8518360 Silicon-germanium hydrides and methods for making and using same |
| 08/27/2013 | US8518179 Controlling the emissive properties of materials-improved lasers and upconversion materials |
| 08/22/2013 | US20130216800 Perovskite to brownmillerite complex oxide crystal structure transformation induced by oxygen deficient getter layer |
| 08/22/2013 | DE112011103871T5 Verfahren zum Ausbilden von Gruppe-III-Nitridmaterialien und Strukturen, die durch derartige Verfahren ausgebildet sind A method of forming group III-nitride materials and structures which are formed by such processes |
| 08/22/2013 | DE112006002430B4 Verfahren zur Herstellung von Super-Gittern unter Verwendung von abwechselnden Hoch und Niedrig-Temperatur-Schichten zum Sperren von parasitären Strompfaden A process for the production of super-lattices using alternating high and low-temperature layers to block parasitic current paths |
| 08/21/2013 | EP2629320A2 Mask structure and method for defect-free heteroepitaxial deposition |
| 08/21/2013 | EP2627804A1 Method for fabricating a free-standing group iii nitride substrate |
| 08/21/2013 | EP2627803A1 Heterogrowth |
| 08/21/2013 | CN103258722A Method adopting AlGaInN buffering layer to grow three-group nitride in GaAs substrate |
| 08/21/2013 | CN103255474A Preparation method of large-sized single crystal graphene |
| 08/21/2013 | CN103255389A Method for epitaxial growth of III nitride semiconductor material on silicon substrate |
| 08/21/2013 | CN102325921B Mocvd reactor having cylindrical gas inlet element |
| 08/21/2013 | CN101688298B Method and device for preparing a multilayered coating on a substrate |
| 08/20/2013 | US8513101 Method of synthesizing nanowires |
| 08/15/2013 | US20130209683 Methods of Making Nanowires |
| 08/14/2013 | EP2626890A1 Epitaxial wafer, light-receiving element, optical sensor device, and method for manufacturing epitaxial wafer and light-receiving element |
| 08/14/2013 | DE102012202099A1 Verfahren zum Abkühlen von Scheiben aus Halbleitermaterial A method for cooling of slices of semiconductor material |
| 08/14/2013 | CN102140696B Doped III-N bulk crystal and self-supporting doped III-N substrate |
| 08/13/2013 | US8507950 Method of producing semiconductor wafer and semiconductor wafer |
| 08/13/2013 | US8507039 Method for growing thin films |
| 08/08/2013 | WO2013114218A2 High-throughput continuous gas-phase synthesis of nanowires with tunable properties |
| 08/08/2013 | US20130202518 Single crystal diamond prepared by cvd |
| 08/08/2013 | US20130199441 Gas injectors for chemical vapour deposition (cvd) systems and cvd systems with the same |
| 08/07/2013 | EP2622115A1 Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system |
| 08/07/2013 | CN203112961U Reaction furnace of etching baking device |
| 08/07/2013 | CN103237929A Methods for forming group iii-nitride materials and structures formed by such methods |
| 08/06/2013 | US8501592 Freestanding III-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrate |
| 08/06/2013 | US8501143 Single crystal diamond prepared by CVD |
| 08/06/2013 | US8501141 Method for producing group III nitride semiconductor |
| 08/06/2013 | US8501136 Synthesis and processing of rare-earth boride nanowires as electron emitters |
| 08/01/2013 | WO2013110964A1 Method for producing nanocrystals from piezoelectric aluminium nitride for sorption filters |
| 08/01/2013 | US20130193444 High voltage switching devices and process for forming same |
| 07/31/2013 | CN103228827A Method for producing epitaxial silicon carbide single crystal substrate |
| 07/31/2013 | CN103225109A II type III-V group quantum dot material growth method |
| 07/25/2013 | WO2013109854A1 Crystal growth using non-thermal atmospheric pressure plasmas |
| 07/25/2013 | US20130187124 Lighting-emitting device with nanostructured layer and method for fabricating the same |
| 07/25/2013 | DE102011122749A1 Verfahren zur Oberflächenpräparation von Si (100)-Substraten. A process for the preparation of surface Si (100) substrates. |
| 07/25/2013 | DE102010011895B4 Verfahren zur Herstellung eines semipolaren Gruppe III-Nitrid-Kristalls, Substrat, freistehendes semipolares Substrat und Verwendung der Substrate A process for the preparation of a semi-polar group III-nitride crystal substrate, detached semi-polar substrate and substrates using the |
| 07/24/2013 | CN203085631U Non-polar doped GaN film growing on LiGaO2 substrate |
| 07/24/2013 | CN203085624U Epitaxial growth substrate of semiconductor |