Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
03/2014
03/12/2014CN203474962U MOCVD (metal organic chemical vapor deposition) built-in dust collector
03/12/2014CN203474961U Epitaxial wafer growth base disc
03/12/2014CN203474960U Crystal growth doper
03/12/2014CN203474959U Epitaxial wafer base disc
03/12/2014CN103630247A Self-doped silicon-germanium/silicon multiple quantum well thermosensitive material applied to uncooled infrared detection array
03/12/2014CN103628140A Dual sealing structure for ultra high temperature double-layer water cooling quartz tube vacuum chamber
03/12/2014CN103628040A MOCVD apparatus and MOCVD heating method
03/11/2014US8669496 System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
03/06/2014WO2014035344A1 Apparatus and method of producing diamond
03/06/2014WO2014032468A1 Method for preparing gan film material
03/06/2014WO2013182879A3 Gas injection components for deposition systems and related methods
03/06/2014WO2013182878A3 Gas injection components for deposition systems, deposition systems including such components, and related methods
03/06/2014US20140065368 Superhydrophobic films and methods for making superhydrophobic films
03/06/2014US20140060435 Doors for high volume, low cost system for epitaxial silicon deposition
03/06/2014US20140060434 Gas injector for high volume, low cost system for epitaxial silicon depositon
03/05/2014CN103620093A Diamond sensors, detectors, and quantum devices
03/05/2014CN103614769A Gallium nitride homoepitaxy method based on in situ etching
03/04/2014US8663389 Method and apparatus for crystal growth using a membrane-assisted semi-closed reactor
02/2014
02/27/2014WO2014031119A1 Highly transparent aluminum nitride single crystalline layers and devices made therefrom
02/26/2014EP2700739A1 Epitaxial silicon carbide single-crystal substrate and process for producing same
02/26/2014CN203451615U Quartz platform for growing graphene
02/26/2014CN103606514A Chemical corrosion transfer method based on GaN substrate CVD epitaxial growth graphene
02/26/2014CN103603048A Chemical vapor deposition equipment used for producing silicon carbide epitaxial wafer
02/26/2014CN103603038A Photo-assisted MOCVD (metal-organic chemical vapor deposition) reactor with horizontal porous spray device
02/25/2014US8658449 Semiconductor layer, method of manufacturing the same, laser diode, and method of manufacturing the same
02/25/2014US8657956 Apparatus for producing solid product
02/20/2014WO2014028283A2 SEED LAYER FOR ZnO AND DOPED-ZnO THIN FILM NUCLEATION AND METHODS OF SEED LAYER DEPOSITION
02/20/2014WO2014026930A1 Thick polycrystalline synthetic diamond wafers for heat spreading applications and microwave plasma chemical vapour deposition synthesis techniques
02/20/2014US20140050652 Graphene and its growth
02/20/2014US20140048014 Crystal Growth Apparatus
02/20/2014US20140048013 SEED LAYER FOR ZnO AND DOPED-ZnO THIN FILM NUCLEATION AND METHODS OF SEED LAYER DEPOSITION
02/19/2014EP2698438A1 Tantalum-material multilevel distillation crucible and distillation process
02/19/2014CN103590100A MOCVD reaction room used for growing graphene
02/19/2014CN103590099A Wafer level graphene controllable epitaxy method based on MOCVD devices
02/19/2014CN102102220B Preparation method of graphene on diamond (111) surface
02/18/2014US8652256 Manufacturing apparatus of polycrystalline silicon
02/18/2014US8652255 Method of producing epitaxial layers with low basal plane dislocation concentrations
02/13/2014WO2014024404A1 Production method for epitaxial silicon wafer and epitaxial silicon wafer
02/13/2014US20140041584 Abatement of reaction gases from gallium nitride deposition
02/13/2014US20140041574 Diamond producing method and dc plasma enhanced cvd apparatus
02/12/2014CN103572371A Metal-organic compound epitaxial-growth reaction chamber and its exhaust device and exhaust method
02/12/2014CN103572261A 石墨加热器 Graphite heater
02/12/2014CN103572255A Metal chemical vapor deposition equipment and reaction chamber thereof
02/11/2014US8647432 Method of making large surface area filaments for the production of polysilicon in a CVD reactor
02/06/2014WO2014021365A1 Semiconductor structure, semiconductor device, and method for producing semiconductor structure
02/06/2014WO2014021259A1 Nitride semiconductor element structure and method for producing same
02/06/2014US20140038315 Apparatus and method for measuring the dimensions of 1-dimensional and 0-dimensional nanostructures in real-time during epitaxial growth
02/06/2014US20140037258 Fabrication of low-loss, light-waveguiding, orientation-patterned semiconductor structures
02/06/2014US20140033981 MOCVD for Growing III-V Compound Semiconductors on Silicon Substrates
02/05/2014EP2691563A1 Array of metallic nanotubes
02/05/2014CN103556219A Device for epitaxial growth of silicon carbide
02/05/2014CN103556218A Monoclinic-phase vanadium dioxide epitaxial film and preparation method thereof
02/05/2014CN103556217A Preparation method for 1-5 layer single crystal graphene
02/04/2014US8643060 Method for manufacturing epitaxial crystal substrate, epitaxial crystal substrate and semiconductor device
02/04/2014US8642449 Silicon wafer
01/2014
01/30/2014WO2013114218A3 High-throughput continuous gas-phase synthesis of nanowires with tunable properties
01/30/2014US20140027777 Growing of gallium-nitrade layer on silicon substrate
01/29/2014EP2688847A1 Method for surfactant crystal growth of a metal-nonmetal compound
01/29/2014CN103541001A Preparation method for improving electrical resistivity and thickness consistency of epitaxial slice
01/29/2014CN103541000A Device and method for preparing boron nitride single crystal
01/29/2014CN103540999A Preparation method of component-adjusting ternary (Sb1-xBix)2Se3 nanowire
01/29/2014CN103540910A Spray header and reaction cavity
01/28/2014US8636845 Metal heterocyclic compounds for deposition of thin films
01/28/2014US8636844 Oxygen engineered single-crystal REO template
01/28/2014US8636843 Single-crystal apatite nanowires sheathed in graphitic shells and synthesis method thereof
01/23/2014WO2014012237A1 Method and apparatus for growing nitride-based compound semiconductor crystals
01/23/2014US20140020620 Diamond
01/22/2014EP2687621A2 Vapor delivery device
01/22/2014CN103526296A Method of manufacturing gallium nitride substrate and gallium nitride substrate manufactured by the same
01/22/2014CN103526285A LED (Light Emitting Diode) epitaxial wafer inverted MOCVD (Metal Organic Chemical Vapor Deposition) reaction furnace
01/22/2014CN103526190A Device for controlling light-emitting wavelength and uniformity of epitaxial wafers in MOCVD (Metal Organic Chemical Vapor Deposition) system and method thereof
01/16/2014US20140017827 Apparatus and method for manufacturing a light-emitting device using a neutral particle beam
01/16/2014US20140014030 Methods for production of single-crystal graphenes
01/15/2014EP2684988A1 Base, substrate with gallium nitride crystal layer, and process for producing same
01/15/2014CN103510158A Compatible small-disk base for silicon carbide epitaxial furnace and using method thereof
01/09/2014US20140007815 Susceptor and vapor-phase growth apparatus
01/09/2014US20140007808 Susceptor Device And Deposition Apparatus Having The Same
01/08/2014CN103498193A Epitaxial growth method for improving crystal quality of material
01/08/2014CN103498192A Double-station CVD (Chemical Vapor Deposition) furnace
01/08/2014CN103498191A Preparation method of high-purity short-rod-like crystalline FeWO4/FeS core-shell nano structure
01/08/2014CN103498190A Preparation method of high-purity dendrite FeWO4/FeS core-shell nano structure
01/03/2014WO2014002123A1 Method for realizing monoatomic layers of crystalline silicium upon a substrate of crystalline "beta" - silicium nitride
01/01/2014EP2679707A1 Method of manufacturing gallium nitride substrate and gallium nitride substrate manufactured by the same
01/01/2014CN203373421U MOCVD (Metal Oxide Chemical Vapor Deposition) reaction equipment
01/01/2014CN103489952A SiC substrate single solar cell epitaxy structure and manufacturing method thereof
01/01/2014CN103489760A SiC substrate homoepitaxy carbon silicon double-atomic-layer film method
01/01/2014CN103489759A SiC substrate homogeneous Web Growth epitaxy method
01/01/2014CN103484934A Vapor deposition device and heating system thereof
01/01/2014CN103484933A Cleaning method for epitaxial chemical vapor deposition (CVD) device
01/01/2014CN103484837A Substrate support and semiconductor manufacturing apparatus
12/2013
12/27/2013WO2013191201A1 SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
12/25/2013CN203360621U Graphite base with silicon carbide coating
12/25/2013CN103469308A Two-dimensional atomic crystal material and continuous production method and production line thereof
12/25/2013CN103469301A Method for preparing LED (light-emitting diode) broadband gradient fluorescent film with MOCVD (metal organic chemical vapor deposition) method
12/25/2013CN103469300A Silicon carbide epitaxial furnace heating pedestal
12/25/2013CN103469299A Preparation method of gallium oxide-doped membrane and gallium oxide-doped membrane
12/25/2013CN102795627B Multi-parameter online monitoring and optimizing control device and method of polycrystalline silicon reduction furnace
12/24/2013DE112012000868T5 III-V- Halbleiterstrukturen mit verminderten Pit-Defekten und Verfahren zum Ausbilden derselben III-V semiconductor structures with reduced defects and pit method of forming the same
12/19/2013WO2013188574A2 Multilayer substrate structure and method and system of manufacturing the same
12/19/2013US20130336873 Diamond growth using diamondoids
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