| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 05/08/2013 | CN103094314A New iii-nitride growth method on silicon substrate |
| 05/08/2013 | CN103094067A Manufacture method of semi-conductor device |
| 05/08/2013 | CN103088416A LED (Light-Emitting Diode) epitaxial wafer deposition process and LED epitaxial wafer deposition device |
| 05/08/2013 | CN103088415A Method for improving temperature uniformity in lamp-heated cavity |
| 05/08/2013 | CN103088414A Vapor-phase epitaxy deposition apparatus realizing nitride crystal homoepitaxy |
| 05/08/2013 | CN103088413A Etching and roasting equipment |
| 05/08/2013 | CN103088412A Reaction furnace of etching roasting equipment |
| 05/08/2013 | CN103088311A Method of forming seed layer and method of forming silicon-containing thin film |
| 05/08/2013 | CN102268736B Method for preparing silicon carbide nanowire array through gas phase interlayer diffusion reaction process |
| 05/02/2013 | US20130108877 Crystalline strontium titanate and methods of forming the same |
| 05/02/2013 | US20130104802 Gallium trichloride injection scheme |
| 05/02/2013 | US20130104800 Film-forming method and film-forming apparatus |
| 05/01/2013 | EP2587556A1 Sapphire substrate, method for producing same, and nitride semiconductor light emitting element |
| 05/01/2013 | CN103081062A Method for manufacturing compound semiconductor |
| 05/01/2013 | CN103078016A LED (Light Emitting Diode) epitaxial wafer deposition method and LED epitaxial wafer deposition equipment |
| 05/01/2013 | CN103074679A Preparation method of single crystal grapheme through chemical vapor deposition |
| 05/01/2013 | CN103074677A Preparation method for zinc telluride homoepitaxy layer |
| 05/01/2013 | CN103074676A Edge protection method for achieving growth of semiconductor material having self-peeling function |
| 05/01/2013 | CN103074675A 气体系统 Gas System |
| 05/01/2013 | CN103074674A Reaction chamber air inlet device for metal organic chemical vapor deposition (MOCVD) equipment |
| 05/01/2013 | CN103074673A Substrate supporting structure and deposition device |
| 05/01/2013 | CN103074672A Gas phase epitaxial growth method of single crystal silicon |
| 05/01/2013 | CN101636850B Iii-nitride light emitting devices grown on templates to reduce strain |
| 04/30/2013 | US8430959 Apparatus and methods for preparation of high-purity silicon rods using mixed core means |
| 04/25/2013 | US20130098289 Methods and apparatus for a chemical vapor deposition reactor |
| 04/25/2013 | US20130098288 Gas-phase synthesis of wires |
| 04/24/2013 | EP2584072A2 Large area deposition of graphene hetero-epitaxial growth, and products including the same |
| 04/24/2013 | CN202904399U Temperature control system, metal organic chemical vapor deposition equipment and semiconductor film deposition equipment |
| 04/24/2013 | CN202898596U Light-emitting diode (LED) epitaxial wafer reacting furnace |
| 04/24/2013 | CN1890784B Strained semiconductor substrate and processes therefor |
| 04/24/2013 | CN103060907A A method of preparing single-crystal graphene on insulating materials |
| 04/24/2013 | CN103060906A Square spray nozzle structure for vapor phase epitaxy of material |
| 04/24/2013 | CN103060905A Growing method of superfine indium arsenide nanowire with high crystalline quality |
| 04/24/2013 | CN102051675B Method for manufacturing CuO nanowire |
| 04/24/2013 | CN101787561B Growing method of Fe3N material |
| 04/23/2013 | US8425803 Nanocrystal doped matrixes |
| 04/23/2013 | CA2456847C System and method for producing synthetic diamond |
| 04/18/2013 | US20130095305 Graphene pattern and process of preparing the same |
| 04/18/2013 | US20130093288 Thermally oxidized seed layers for the production of textured electrodes and pzt devices and method of making |
| 04/17/2013 | EP2581475A1 Preparation method of a type p Zinc oxide ZnO or of a type p ZnMgO |
| 04/17/2013 | CN202881384U Control structure provided with eight U-type grooves and used for plate-type PECVD (Plasma Enhanced Chemical Vapor Deposition) specific gas pipeline |
| 04/17/2013 | CN101802273B Epitaxial SIC single crystal substrate and method for manufacturing epitaxial SIC single crystal substrate |
| 04/17/2013 | CN101336314B Process for growth of low dislocation density GaN |
| 04/16/2013 | US8420043 Nano-crystal diamond film, manufacturing method thereof, and device using nano-crystal diamond film |
| 04/16/2013 | US8419856 Substrate processing apparatus |
| 04/11/2013 | US20130087095 Self-gettering differential pump |
| 04/11/2013 | US20130087093 Apparatus and method for hvpe processing using a plasma |
| 04/10/2013 | EP2579297A1 Method of producing template for epitaxial growth and nitride semiconductor device |
| 04/10/2013 | CN103035794A Light-emitting diode (LED) epitaxial wafer developed on silicon (Si) substrate and preparation method thereof |
| 04/10/2013 | CN103031598A Silicon epitaxial growth process |
| 04/10/2013 | CN103031597A Na-Be codoped p-ZnO film growth method |
| 04/10/2013 | CN103031596A Epitaxial growth method of solar-blind UV (Ultraviolet) photocathode based on AlGaN (Aluminum Gallium Nitrogen) materials |
| 04/10/2013 | CN103031595A Non-polar doped GaN film grown on LiGaO2 substrate and preparation method thereof |
| 04/10/2013 | CN103031530A Thin film forming method and film forming apparatus |
| 04/10/2013 | CN102260908B Device for growing nanometer crystal silicon powder |
| 04/07/2013 | CA2789486A1 Apparatus and process for deposition of polycrystalline silicon |
| 04/03/2013 | CN202849591U Quartz explosionproof container for single crystal growth |
| 04/03/2013 | CN103021946A Method of preparing GaN monocrystal substrate in mechanical removal way |
| 04/03/2013 | CN103014847A Preparation method for tension strain germanium nano-film with high mono-crystal quality |
| 04/03/2013 | CN103014846A Concentric-ring sprayer structure for material vapor phase epitaxy |
| 04/03/2013 | CN103014845A Method for self-assembly growth for micro-nano-scale graphene |
| 04/03/2013 | CN103014659A Method and apparatus for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber |
| 04/03/2013 | CN103014625A Method for preparing tetragonal-phase room-temperature multi-ferroic material BiFeO3 |
| 04/03/2013 | CN102505113B Preparation method of large-area graphene based on Cl2 reaction |
| 04/03/2013 | CN101838848B Epitaxially coated silicon wafer and method for producing an epitaxially coated silicon wafer |
| 04/02/2013 | US8409349 Film thickness measurement method, epitaxial wafer production process and epitaxial wafer |
| 03/28/2013 | WO2013042504A1 Substrate having buffer layer structure for growing nitride semiconductor layer |
| 03/28/2013 | DE102007049666B4 Verfahren zur Herstellung von p- -dotierten und epitaktisch beschichteten Halbleiterscheiben aus Silicium Process for the preparation of p-doped and epitaxially coated semiconductor wafers of silicon |
| 03/27/2013 | EP2573206A1 Method for growing a group (iii) metal nitride film |
| 03/27/2013 | CN103003209A Vitreous silica crucible having a polygonal opening, and method for manufacturing same |
| 03/27/2013 | CN103000555A Thermal treatment apparatus, temperature control system, thermal treatment method, and temperature control method |
| 03/27/2013 | CN102995119A Large-dimension hexagonal bi-layer grapheme single-crystal domain and preparation method thereof |
| 03/27/2013 | CN102995117A Preparation method of topological insulator structure |
| 03/27/2013 | CN102220640B Preparation method of gallium nitride single crystal |
| 03/27/2013 | CN101443488B Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrate |
| 03/26/2013 | US8404571 Film deposition method |
| 03/26/2013 | US8404044 Epitaxial growth film formation method |
| 03/26/2013 | US8404042 Group-III nitride crystal composite |
| 03/21/2013 | US20130069078 Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate |
| 03/21/2013 | US20130069075 Nitride semiconductor crystal producing method, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrate |
| 03/21/2013 | DE102006027841B4 Verfahren zur Herstellung eines III-Nitrid-Halbleiter-Bauteils A process for producing a III-nitride semiconductor device |
| 03/20/2013 | EP2570523A1 Method for producing gallium trichloride gas and method for producing nitride semiconductor crystal |
| 03/20/2013 | EP2570522A1 Epitaxial silicon carbide single-crystal substrate and method for producing the same |
| 03/20/2013 | EP2569466A1 Gas-phase synthesis of wires |
| 03/20/2013 | CN102978695A Concealed-structure substrate for epitaxial growth of semiconductor device |
| 03/20/2013 | CN102978572A Method for preparing CdTe film and thermal evaporation device |
| 03/20/2013 | CN102104060B Semiconductor structure and forming method thereof |
| 03/20/2013 | CN102057079B Arrangement in connection with ALD reactor |
| 03/20/2013 | CN101653735B Catalyst particles on tip |
| 03/19/2013 | US8399339 Nanosensors |
| 03/19/2013 | US8398768 Methods of making an article of semiconducting material on a mold comprising semiconducting material |
| 03/14/2013 | WO2013035691A1 Sic epitaxial wafer and method for manufacturing same |
| 03/14/2013 | US20130062628 Methods for the epitaxial growth of silicon carbide |
| 03/14/2013 | DE112011101454T5 Epitaxialwafer-Suszeptor und dem Suszeptor angepasste Halte- und Dreh-Verbindungsvorrichtung Epitaxial wafer susceptor and the susceptor adapted holding and rotating connection device |
| 03/13/2013 | EP2567004A1 Substrate for epitaxial growth |
| 03/13/2013 | CN202786421U Graphite boat ceramic loop |
| 03/13/2013 | CN102971452A Gas-phase synthesis of wires |
| 03/13/2013 | CN102965733A Growth technique of graphite-coating-free conductive silicon carbide crystals |
| 03/13/2013 | CN102260907B Preparation method of ZnO nano homogeneous p-n junction array |
| 03/13/2013 | CN102011182B Method for manufacturing lattice graded buffer layer |