Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
12/2013
12/19/2013US20130333613 Method for surfactant crystal growth of a metal-nonmetal compound
12/19/2013US20130333611 Lattice matching layer for use in a multilayer substrate structure
12/19/2013DE102012012088A1 Verfahren zum Herstellen von Halbleiterdünnschichten auf Fremdsubstraten A method for the manufacture of semiconductor thin films on foreign substrates
12/18/2013EP2674518A1 Method of manufacturing gallium nitride substrate and gallium nitride substrate manufactured thereby
12/18/2013EP1778897B1 Structure comprising iii-nitride materials including low dislocation densities and method of its formation
12/18/2013CN103456608A Method for growing single crystals and polycrystals on semiconductor substrate at same time
12/18/2013CN103451725A Vapor phase growth device and producing method of nitride semiconductor illuminating element
12/18/2013CN103451629A Automatic controller for MOCVD (Metal-Organic Chemical Vapor Deposition)
12/17/2013US8608849 Method for making zinc oxide nano-structrure
12/12/2013US20130327266 Temperature-controlled purge gate valve for chemical vapor deposition chamber
12/11/2013CN103441181A InSb/GaSb quantum dot structure apparatus and growing method
12/11/2013CN101240446B Apparatus of supplying organometallic compound
12/10/2013US8603898 Method for forming group III/V conformal layers on silicon substrates
12/10/2013US8603243 Tracking carbon to silicon ratio in situ during silicon carbide growth
12/10/2013CA2556824C Vapor phase growth method
12/05/2013WO2013180058A1 Semiconductor laminate structure and semiconductor element
12/05/2013WO2013180057A1 Semiconductor layered structure and semiconductor element
12/05/2013US20130319320 Production Method of an Aluminum Based Group III Nitride Single Crystal
12/05/2013US20130319319 Susceptor and method for manufacturing epitaxial wafer using the same
12/05/2013DE10043600B4 Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren, insbesondere ebenfalls kristallinen Substraten Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates
12/04/2013CN103422164A Method for controlling N-type 4H-SiC homogenous epitaxial doping
11/2013
11/28/2013WO2013176619A1 Concentric flow reactor
11/28/2013WO2013175411A1 Method for forming an epitactic silicon layer
11/28/2013US20130312662 Graphene production using laser heated crystal growth
11/28/2013DE102012104475A1 Device useful for depositing layer on substrate comprises processing chamber having susceptor heated by heating device for receiving substrate, gas inlet element, gas outlet element and gas-tight reactor housing which is outwardly arranged
11/26/2013US8592862 Gallium nitride semiconductor structures with compositionally-graded transition layer
11/26/2013US8592289 Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer
11/26/2013US8591655 Apparatus for the preparation of film
11/26/2013US8591652 Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy
11/26/2013US8591650 Method for forming crystalline semiconductor film, method for manufacturing thin film transistor, and method for manufacturing display device
11/21/2013WO2013172792A1 Methods of growing uniform, large-scale, multilayer graphene films
11/21/2013WO2013171988A1 Film deposition method and film deposition apparatus
11/20/2013EP2664696A2 Process for growth of low dislocation density gan
11/20/2013EP2414567B1 Semipolar semiconductor and its method of production
11/20/2013EP2145987B1 Fabrication method of a group III nitride crystal substance
11/20/2013EP2048267B1 Process for producing single-crystal substrate with off angle
11/20/2013EP1551768B1 Process for manufacturing a gallium rich gallium nitride film
11/20/2013EP1533834B1 Vapor phase epitaxial apparatus and vapor phase epitaxial method
11/20/2013CN1961100B Directionally controlled growth of nanowhiskers
11/20/2013CN103403842A Structure for growth of nitride semiconductor layer, stacked structure, nitride-based semiconductor element, light source, and manufacturing method for same
11/20/2013CN103397376A Method for growing InGaAs material with low dislocation density and high indium composition by adopting LP-MOCVD (Low Pressure Metal-Organic Chemical Vapor Deposition) system
11/19/2013US8585822 Method for testing group III-nitride wafers and group III-nitride wafers with test data
11/19/2013US8585821 SiC epitaxial substrate and method for producing the same
11/19/2013US8585820 Abatement of reaction gases from gallium nitride deposition
11/14/2013US20130298832 Substrate processing system with lamphead having temperature management
11/14/2013US20130298823 Gallium-Nitride-On-Diamond Wafers and Manufacturing Equipment and Methods of Manufacture
11/13/2013CN103388178A Epitaxial structure of III-group nitride and growth method thereof
11/13/2013CN103388177A Growing device and method of semiconductor film
11/13/2013CN102286777B H3PO4 corrosive seed crystal for growing GaN (Gallium Nitride) single crystal by using HVPE (Hydride Vapor Phase Epitaxial) and preparation method thereof
11/07/2013DE102009010556B4 Verfahren zur Herstellung von epitaxierten Siliciumscheiben Process for producing epitaxially coated silicon wafers
11/07/2013CA2813276A1 Polycrystalline silicon rod and process for production thereof
11/06/2013EP2659504A1 Deposition systems and processes
11/05/2013US8574528 Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
11/05/2013US8574364 GaN-crystal free-standing substrate and method for producing the same
11/04/2013CA2815182A1 Current supply arrangement with a first and a second current supply device, wherein the second current supply device is connected to the first current supply device
10/2013
10/31/2013WO2013161450A1 Method for manufacturing silicon carbide semiconductor element
10/31/2013WO2013160664A1 Methods for applying graphene coatings and substrates with such coatings
10/31/2013WO2013115711A3 Silicon carbide crystal growth in a cvd reactor using chlorinated chemistry
10/31/2013DE102012103686A1 Epitaxiesubstrat, Verfahren zur Herstellung eines Epitaxiesubstrats und optoelektronischer Halbleiterchip mit einem Epitaxiesubstrat Epitaxial substrate, methods of manufacturing an epitaxial substrate and opto-electronic semiconductor chip having an epitaxial substrate
10/30/2013EP2657378A1 METHOD AND DEVICE FOR MANUFACTURING SELF-SUPPORTING GALLIUM NITRIDE (GaN) SUBSTRATE
10/30/2013EP2655704A1 Dislocation engineering in single crystal synthetic diamond material
10/30/2013CN103374751A Preparation method of extensional structural body with micro-structure
10/30/2013CN103374706A Method for preparing polycrystalline silicon film
10/30/2013CN102492938B Single-contact rotation-revolution base boat
10/29/2013US8568537 Epitaxial wafer and method of producing the same
10/29/2013US8568530 Use of cyclopentadienyl type hafnium and zirconium precursors in atomic layer deposition
10/24/2013WO2013158492A1 Susceptor assemblies for supporting wafers in a reactor apparatus
10/24/2013WO2013157057A1 Vapor deposition apparatus and method associated
10/24/2013US20130276697 METHOD AND APPARATUS FOR FABRICATING FREESTANDING GaN SUBSTRATE
10/24/2013US20130276696 Production method for flat substrate with low defect density
10/23/2013CN103370454A Epitaxial silicon carbide single-crystal substrate and process for producing same
10/23/2013CN103370453A III-V semiconductor structures with diminished pit defects and methods for forming the same
10/23/2013CN103361719A Method for growing gallium nitride epitaxial layer on buffer layer
10/23/2013CN101684549B Method for manufacturing nitride semiconductor device
10/22/2013US8562738 Nitride-based light-emitting device
10/22/2013CA2430888C Nanosensors
10/17/2013US20130269600 Method for growing magnesium-zinc-oxide-based crystal
10/17/2013US20130269599 Methods and Apparatus for Continuous Pressure Control Processing
10/17/2013DE102010026987B4 Herstellvorrichtung und -verfahren für Halbleiterbauelement Fabrication and method for semiconductor device
10/16/2013CN103354845A Dislocation engineering in single crystal synthetic diamond material
10/16/2013CN103352249A Method for enlarging chemical vapor deposition graphene single crystal domain size
10/15/2013US8557043 Method for testing group III-nitride wafers and group III-nitride wafers with test data
10/15/2013US8557041 Method for manufacturing P-I-N microcrystalline silicon structure for thin-film solar cells
10/10/2013WO2013151045A1 Crystal growth method and crystal growth apparatus
10/10/2013US20130263776 Methods For Fabricating A Semiconductor Wafer Processing Device
10/10/2013DE102013205068A1 Passivieren von Punktdefekten in Gatedielektrikumsschichten mit großer Dielektrizitätskonstante während der Gatestapelbildung Passivation of point defects in the gate dielectric with a high dielectric constant while the gate stack formation
10/10/2013DE102012205616A1 Vorrichtung zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels Gasphasenabscheidung An apparatus for depositing a layer on a semiconductor wafer by chemical vapor deposition
10/09/2013CN203229585U Long-life monocrystal silicon heater with uniform current field
10/09/2013CN103348044A Base, substrate with gallium nitride crystal layer, and process for producing same
10/09/2013CN103348043A Method for producing substrate for group iii nitride semiconductor element fabrication, method for producing group iii nitride semiconductor free-standing substrate or group iii nitride semiconductor element, and group iii nitride growth substrate
10/09/2013CN103343386A Method for improving crystalline quality of material by virtue of in-situ corrosion technology
10/09/2013CN102544356B Method for preparing heating layer of phase change memory
10/03/2013WO2013145404A1 Laminated substate of silicon single crystal and group iii nitride single crystal with off angle
10/03/2013WO2013144640A1 Process for producing two-dimensional nanomaterials
10/03/2013US20130255566 Method for making epitaxial structure
10/03/2013US20130255565 Method for making epitaxial structure
10/02/2013EP2644756A1 Patterned sapphire substrate and method for manufacturing the same and nitride semiconductor light emitting element using that sapphire substrate
10/02/2013CN203222620U 监控装置及气相沉积设备 Monitoring devices and vapor deposition equipment
10/02/2013CN103334090A Preparation method of InN (indium nitride)/AlN (aluminum nitride)/glass structure
10/01/2013US8545627 Zirconium and hafnium boride alloy templates on silicon for nitride integration applications
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