Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
09/1988
09/06/1988USH520 Producing a silicon crystal melt from a glass crucible; increasing reactive surface area by corrugations and ribs
08/1988
08/30/1988CA1241257A1 Method of and apparatus for the drawing of bars of monocrystalline silicon
08/24/1988EP0279490A2 Rare earth-aluminium-garnet single crystal
08/23/1988US4765925 Solid state laser hosts
08/17/1988EP0278131A1 A method for the preparation of a thin semiconductor film
08/16/1988CA1240482A1 Silicon melting and evaporation method and apparatus for high purity applications
08/11/1988WO1988005835A1 A method for the preparation of a thin semiconductor film
08/09/1988US4762687 Means for forming a melt of a semiconductor material in order to make a crystalline element grow therein
08/04/1988DE3701811A1 Method and apparatus for producing a single crystal
08/04/1988DE3701733A1 Method and apparatus for growing Czochralski single crystals
08/02/1988CA1239851A1 Single crystal of compound semiconductor of groups iii-v with low dislocation density
07/1988
07/27/1988CN88100307A Preparation method of a micronitrogen, low-oxygen, low-carbon, vertical-pull monocrystalline silicon
07/27/1988CN87108227A Mixed la-mg aluminate and laser made from aluminate single-crystal
07/26/1988US4759887 Feeding silicon grains in melting zone, melting to form coherent but porous compound material, removing, and hardening into stable porous compound shaped body
07/26/1988US4759787 Applying a polarization potential across the wall to cause impurity ions to migrate away from inner wall
07/14/1988DE3644746A1 Process and apparatus for growing crystals
07/13/1988EP0274298A1 Mixed aluminates of lanthanium-magnesium, and lasers using single crystals of these aluminates
07/05/1988US4755220 Materials resistant to metal and salt melts, their production and their use
07/05/1988CA1238839A1 Apparatus for producing single crystal
06/1988
06/21/1988US4752451 Apparatus for producing a strain-free monocrystal of a crystalline ferroelectric compound
06/14/1988US4751059 Apparatus for growing dendritic web crystals of constant width
06/14/1988US4750969 Method for growing single crystals of dissociative compound semiconductor
06/09/1988DE3640868A1 Apparatus for determining the diameter of a crystal on pulling from a melt
06/08/1988CN87108014A Process for growing shaped single crystals
06/08/1988CN87108007A Apparatus for growing profieled single crystals
06/07/1988CA1237640A1 Process for preparing single crystal
06/02/1988WO1988003968A1 Device for growing profiled monocrystals
06/02/1988WO1988003967A1 Method of growing profiled monocrystals
05/1988
05/31/1988US4747774 Conforming crucible/susceptor system for silicon crystal growth
05/25/1988EP0268166A2 Molten metal and fused salt resistant materials, their production and application
05/25/1988EP0267941A1 Process for preparing single crystal binary metal oxides of improved purity.
05/04/1988EP0265805A2 Apparatus for measuring crystal diameter
05/04/1988EP0265518A1 Congruently melting complex oxides.
04/1988
04/26/1988US4740975 Congruently melting complex oxides
04/19/1988US4738832 Crystal holder
04/13/1988EP0263543A1 Process for producing a single crystal of a III-V semiconducting compound using the Czochralski method by liquid encapsulation
03/1988
03/30/1988EP0261498A2 Crystal pulling apparatus
03/29/1988CA1234531A1 Cold crucible for melting non-metallic inorganic compounds
03/23/1988CN87104688A Mixed lanthanide series-magnesium gallate and laser made of single crystal thereof
02/1988
02/16/1988US4725423 Process for the regeneration of shaped carbon bodies
02/09/1988US4724038 Basic oxide or carbonate of component a and excess of acidic component b, heating, exposing to mixture of carbon monoxide and carbon dioxide
01/1988
01/27/1988CN87104690A Mixed lanthanides magnesium aluminate and laser using the aluminate single crystal
01/26/1988US4721688 Seeding, withdrawal, capillary pressure yield silidon ribbon from melt
01/20/1988EP0253134A2 Method and apparatus for making ignorganic webs and structures formed thereof
01/19/1988CA1231628A1 Cold crucible for melting and crystallizing non- metallic inorganic compounds
01/13/1988EP0252784A1 Mixed lanthanium-magnesium-gallates and lasers using these gallates
01/13/1988EP0252279A2 Process and apparatus for seperating silicon wafers, to be used for solar cells, from according to the horizontal ribbon pulling growth method prepared silicon ribbon
01/13/1988CN87103690A Separation of silicon belt produced by horizontal draw process
12/1987
12/30/1987CN87206316U Crucible with si3n4 coating
12/23/1987EP0250305A1 Mixed lanthanium-magnesium aluminates, lasers using monocrystals of these aluminates
12/17/1987WO1987007655A1 Process for preparing single crystal binary metal oxides of improved purity
12/15/1987US4713820 High power
12/15/1987US4713104 Quartz glass crucibles
12/08/1987US4711696 Process for enhancing Ti:Al2 O3 tunable laser crystal fluorescence by controlling crystal growth atmosphere
12/08/1987US4711695 Apparatus for and method of making crystalline bodies
12/02/1987EP0247297A2 Semiconductor crystal growth via variable melt rotation
12/01/1987US4710260 Deposition of silicon at temperatures above its melting point
12/01/1987US4710258 System for controlling the diameter of a crystal in a crystal growing furnace
11/1987
11/25/1987EP0246940A1 Process and apparatus for continuously controlling the undercooling of the solidification front of a single crystal during its development, and use in its growth control
11/24/1987US4708764 Two-dimensional mixing
11/24/1987US4708763 Method of manufacturing bismuth germanate crystals
11/19/1987EP0245510A1 Apparatus for producing semiconductor single crystal
11/10/1987US4705591 Pulling processes and equipment for growing silicon crystals having high and controlled carbon content
11/07/1987CN86206599U Double-inoculating-crystal jag
11/05/1987WO1987006630A1 Congruently melting complex oxides
11/03/1987US4704257 Gallium arsenide
10/1987
10/28/1987EP0243231A1 Process for preparing III-V group single crystal semi-isolators by doping, and use of the semi-isolators so obtained
10/27/1987CA1228524A1 Method for growing a gaas single crystal by pulling from gaas melt
10/22/1987DE3712443A1 Verfahren zur entfernung von film von dendritischen strang-silizium A process for removing film of dendritic strand silicon
10/22/1987DE3611950A1 Process for separating off solid reaction products, such as carbon, from carbothermically produced silicon
10/21/1987EP0241614A1 Process for enhancing Ti:Al2O3 tunable laser crystal fluorescence by controlling crystal growth atmosphere
10/13/1987CA1227999A1 Apparatus for and method of making crystalline bodies
10/06/1987US4698120 Isolation of web drawing from melt replenishment chamber
09/1987
09/24/1987DE3608889A1 Method of producing monocrystalline semiconductor ingots having polygonal cross-sectional shape
09/23/1987EP0238142A2 Solid state laser hosts
09/23/1987CN87101952A Apparatus for manufacturing semiconductor single crystals
09/22/1987US4695480 Method and apparatus for drawing a tape constituted by a support coated in a layer of semiconductor material, said tape being drawn from a liquid bath of said material
09/02/1987EP0233950A1 Device for growing monocrystals of refractory metal oxides from the melt
09/01/1987US4690841 Pyrolytic boron nitride article
08/1987
08/25/1987US4689109 String stabilized ribbon growth a method for seeding same
08/18/1987US4687646 Uniformity, high frequency energy;
08/11/1987US4686091 Apparatus for manufacturing compound semiconductor single crystal
08/05/1987EP0230617A1 Apparatus for forming a melt of semiconductor material for growing a crystal element
08/04/1987US4684515 Single crystal article
07/1987
07/22/1987EP0229322A2 Method and apparatus for Czochralski single crystal growing
07/21/1987US4682206 Silicon, dopes
07/14/1987CA1224027A1 Device for the application of a polycrystalline coating to a carbonaceous ribbon
07/14/1987CA1224026A1 Device for continuous application of a polycrystalline silicon coating to the surface of a carbonaceous ribbon
07/07/1987US4678534 Method for growing a single crystal
07/07/1987CA1223798A1 Process for solidification of materials
07/01/1987EP0227499A1 Mixed lanthanum-magnesium aluminates, process for their production and lasers using these aluminates
07/01/1987EP0226794A1 Method of drawing-up a single crystal using a double-crucible apparatus and double-crucible apparatus therefor
06/1987
06/17/1987CN86106346A High-oxygen-content silicon monocrystal substrate for semiconductor devices and production method therefor
06/03/1987CN86107824A Solid-state image pick-up device with uniform distribution of dopant therein and production method therefor
06/02/1987US4670176 Single crystal of compound semiconductor of groups III-V with low dislocation density
06/02/1987US4670096 Process and apparatus for producing semi-conductor foils
05/1987
05/26/1987US4668481 Apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochralski (LEC) process
05/13/1987EP0221051A1 Method and apparatus for growing single crystal bodies
05/12/1987US4664745 Method and apparatus for manufacturing tape-shaped silicon crystals with a threaded carrier
05/12/1987US4664744 Process for the production of bismuth germanate monocrystals with a high scintillation response
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