| Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854) |
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| 09/06/1988 | USH520 Producing a silicon crystal melt from a glass crucible; increasing reactive surface area by corrugations and ribs |
| 08/30/1988 | CA1241257A1 Method of and apparatus for the drawing of bars of monocrystalline silicon |
| 08/24/1988 | EP0279490A2 Rare earth-aluminium-garnet single crystal |
| 08/23/1988 | US4765925 Solid state laser hosts |
| 08/17/1988 | EP0278131A1 A method for the preparation of a thin semiconductor film |
| 08/16/1988 | CA1240482A1 Silicon melting and evaporation method and apparatus for high purity applications |
| 08/11/1988 | WO1988005835A1 A method for the preparation of a thin semiconductor film |
| 08/09/1988 | US4762687 Means for forming a melt of a semiconductor material in order to make a crystalline element grow therein |
| 08/04/1988 | DE3701811A1 Method and apparatus for producing a single crystal |
| 08/04/1988 | DE3701733A1 Method and apparatus for growing Czochralski single crystals |
| 08/02/1988 | CA1239851A1 Single crystal of compound semiconductor of groups iii-v with low dislocation density |
| 07/27/1988 | CN88100307A Preparation method of a micronitrogen, low-oxygen, low-carbon, vertical-pull monocrystalline silicon |
| 07/27/1988 | CN87108227A Mixed la-mg aluminate and laser made from aluminate single-crystal |
| 07/26/1988 | US4759887 Feeding silicon grains in melting zone, melting to form coherent but porous compound material, removing, and hardening into stable porous compound shaped body |
| 07/26/1988 | US4759787 Applying a polarization potential across the wall to cause impurity ions to migrate away from inner wall |
| 07/14/1988 | DE3644746A1 Process and apparatus for growing crystals |
| 07/13/1988 | EP0274298A1 Mixed aluminates of lanthanium-magnesium, and lasers using single crystals of these aluminates |
| 07/05/1988 | US4755220 Materials resistant to metal and salt melts, their production and their use |
| 07/05/1988 | CA1238839A1 Apparatus for producing single crystal |
| 06/21/1988 | US4752451 Apparatus for producing a strain-free monocrystal of a crystalline ferroelectric compound |
| 06/14/1988 | US4751059 Apparatus for growing dendritic web crystals of constant width |
| 06/14/1988 | US4750969 Method for growing single crystals of dissociative compound semiconductor |
| 06/09/1988 | DE3640868A1 Apparatus for determining the diameter of a crystal on pulling from a melt |
| 06/08/1988 | CN87108014A Process for growing shaped single crystals |
| 06/08/1988 | CN87108007A Apparatus for growing profieled single crystals |
| 06/07/1988 | CA1237640A1 Process for preparing single crystal |
| 06/02/1988 | WO1988003968A1 Device for growing profiled monocrystals |
| 06/02/1988 | WO1988003967A1 Method of growing profiled monocrystals |
| 05/31/1988 | US4747774 Conforming crucible/susceptor system for silicon crystal growth |
| 05/25/1988 | EP0268166A2 Molten metal and fused salt resistant materials, their production and application |
| 05/25/1988 | EP0267941A1 Process for preparing single crystal binary metal oxides of improved purity. |
| 05/04/1988 | EP0265805A2 Apparatus for measuring crystal diameter |
| 05/04/1988 | EP0265518A1 Congruently melting complex oxides. |
| 04/26/1988 | US4740975 Congruently melting complex oxides |
| 04/19/1988 | US4738832 Crystal holder |
| 04/13/1988 | EP0263543A1 Process for producing a single crystal of a III-V semiconducting compound using the Czochralski method by liquid encapsulation |
| 03/30/1988 | EP0261498A2 Crystal pulling apparatus |
| 03/29/1988 | CA1234531A1 Cold crucible for melting non-metallic inorganic compounds |
| 03/23/1988 | CN87104688A Mixed lanthanide series-magnesium gallate and laser made of single crystal thereof |
| 02/16/1988 | US4725423 Process for the regeneration of shaped carbon bodies |
| 02/09/1988 | US4724038 Basic oxide or carbonate of component a and excess of acidic component b, heating, exposing to mixture of carbon monoxide and carbon dioxide |
| 01/27/1988 | CN87104690A Mixed lanthanides magnesium aluminate and laser using the aluminate single crystal |
| 01/26/1988 | US4721688 Seeding, withdrawal, capillary pressure yield silidon ribbon from melt |
| 01/20/1988 | EP0253134A2 Method and apparatus for making ignorganic webs and structures formed thereof |
| 01/19/1988 | CA1231628A1 Cold crucible for melting and crystallizing non- metallic inorganic compounds |
| 01/13/1988 | EP0252784A1 Mixed lanthanium-magnesium-gallates and lasers using these gallates |
| 01/13/1988 | EP0252279A2 Process and apparatus for seperating silicon wafers, to be used for solar cells, from according to the horizontal ribbon pulling growth method prepared silicon ribbon |
| 01/13/1988 | CN87103690A Separation of silicon belt produced by horizontal draw process |
| 12/30/1987 | CN87206316U Crucible with si3n4 coating |
| 12/23/1987 | EP0250305A1 Mixed lanthanium-magnesium aluminates, lasers using monocrystals of these aluminates |
| 12/17/1987 | WO1987007655A1 Process for preparing single crystal binary metal oxides of improved purity |
| 12/15/1987 | US4713820 High power |
| 12/15/1987 | US4713104 Quartz glass crucibles |
| 12/08/1987 | US4711696 Process for enhancing Ti:Al2 O3 tunable laser crystal fluorescence by controlling crystal growth atmosphere |
| 12/08/1987 | US4711695 Apparatus for and method of making crystalline bodies |
| 12/02/1987 | EP0247297A2 Semiconductor crystal growth via variable melt rotation |
| 12/01/1987 | US4710260 Deposition of silicon at temperatures above its melting point |
| 12/01/1987 | US4710258 System for controlling the diameter of a crystal in a crystal growing furnace |
| 11/25/1987 | EP0246940A1 Process and apparatus for continuously controlling the undercooling of the solidification front of a single crystal during its development, and use in its growth control |
| 11/24/1987 | US4708764 Two-dimensional mixing |
| 11/24/1987 | US4708763 Method of manufacturing bismuth germanate crystals |
| 11/19/1987 | EP0245510A1 Apparatus for producing semiconductor single crystal |
| 11/10/1987 | US4705591 Pulling processes and equipment for growing silicon crystals having high and controlled carbon content |
| 11/07/1987 | CN86206599U Double-inoculating-crystal jag |
| 11/05/1987 | WO1987006630A1 Congruently melting complex oxides |
| 11/03/1987 | US4704257 Gallium arsenide |
| 10/28/1987 | EP0243231A1 Process for preparing III-V group single crystal semi-isolators by doping, and use of the semi-isolators so obtained |
| 10/27/1987 | CA1228524A1 Method for growing a gaas single crystal by pulling from gaas melt |
| 10/22/1987 | DE3712443A1 Verfahren zur entfernung von film von dendritischen strang-silizium A process for removing film of dendritic strand silicon |
| 10/22/1987 | DE3611950A1 Process for separating off solid reaction products, such as carbon, from carbothermically produced silicon |
| 10/21/1987 | EP0241614A1 Process for enhancing Ti:Al2O3 tunable laser crystal fluorescence by controlling crystal growth atmosphere |
| 10/13/1987 | CA1227999A1 Apparatus for and method of making crystalline bodies |
| 10/06/1987 | US4698120 Isolation of web drawing from melt replenishment chamber |
| 09/24/1987 | DE3608889A1 Method of producing monocrystalline semiconductor ingots having polygonal cross-sectional shape |
| 09/23/1987 | EP0238142A2 Solid state laser hosts |
| 09/23/1987 | CN87101952A Apparatus for manufacturing semiconductor single crystals |
| 09/22/1987 | US4695480 Method and apparatus for drawing a tape constituted by a support coated in a layer of semiconductor material, said tape being drawn from a liquid bath of said material |
| 09/02/1987 | EP0233950A1 Device for growing monocrystals of refractory metal oxides from the melt |
| 09/01/1987 | US4690841 Pyrolytic boron nitride article |
| 08/25/1987 | US4689109 String stabilized ribbon growth a method for seeding same |
| 08/18/1987 | US4687646 Uniformity, high frequency energy; |
| 08/11/1987 | US4686091 Apparatus for manufacturing compound semiconductor single crystal |
| 08/05/1987 | EP0230617A1 Apparatus for forming a melt of semiconductor material for growing a crystal element |
| 08/04/1987 | US4684515 Single crystal article |
| 07/22/1987 | EP0229322A2 Method and apparatus for Czochralski single crystal growing |
| 07/21/1987 | US4682206 Silicon, dopes |
| 07/14/1987 | CA1224027A1 Device for the application of a polycrystalline coating to a carbonaceous ribbon |
| 07/14/1987 | CA1224026A1 Device for continuous application of a polycrystalline silicon coating to the surface of a carbonaceous ribbon |
| 07/07/1987 | US4678534 Method for growing a single crystal |
| 07/07/1987 | CA1223798A1 Process for solidification of materials |
| 07/01/1987 | EP0227499A1 Mixed lanthanum-magnesium aluminates, process for their production and lasers using these aluminates |
| 07/01/1987 | EP0226794A1 Method of drawing-up a single crystal using a double-crucible apparatus and double-crucible apparatus therefor |
| 06/17/1987 | CN86106346A High-oxygen-content silicon monocrystal substrate for semiconductor devices and production method therefor |
| 06/03/1987 | CN86107824A Solid-state image pick-up device with uniform distribution of dopant therein and production method therefor |
| 06/02/1987 | US4670176 Single crystal of compound semiconductor of groups III-V with low dislocation density |
| 06/02/1987 | US4670096 Process and apparatus for producing semi-conductor foils |
| 05/26/1987 | US4668481 Apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochralski (LEC) process |
| 05/13/1987 | EP0221051A1 Method and apparatus for growing single crystal bodies |
| 05/12/1987 | US4664745 Method and apparatus for manufacturing tape-shaped silicon crystals with a threaded carrier |
| 05/12/1987 | US4664744 Process for the production of bismuth germanate monocrystals with a high scintillation response |