| Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854) |
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| 09/04/1990 | US4954211 Monocrystalline lanthanum orthogallate laser material |
| 08/30/1990 | DE3905966A1 Process for growing homogeneous laser garnet crystals in accordance with the Czochralski method |
| 08/22/1990 | EP0383400A2 Method for growing mixed crystals from multicomponent oxide melts |
| 08/22/1990 | CN1009284B Mixing germanium and decolourizing technology of zinc tungstate monocrystal |
| 08/21/1990 | US4951104 Solid-state image pick-up device with uniform distribution of dopant therein and production method therefor |
| 08/08/1990 | EP0381051A1 Growth of solidified films, particularly semiconductors, from melts using a substrate with a profiled surface |
| 08/08/1990 | EP0174003B1 Holder for ingot and crucible |
| 08/07/1990 | US4946746 Melt spinning a molten metal, heat treatment, quenching |
| 07/31/1990 | US4944925 Two heaters |
| 07/31/1990 | US4944834 Process of pulling a crystal |
| 07/31/1990 | US4944833 Czochralski pulling of monocrystalline lanthanum orthogallate |
| 07/31/1990 | CA1272106A1 Double crucible for single crystal growth |
| 07/31/1990 | CA1272105A1 System for controlling the diameter of a crystal in a crystal growing furnace |
| 07/27/1990 | CA2005601A1 Substrates provided with a structured surface for growing solidifying layers from melts |
| 07/24/1990 | US4943160 Interface angle estimation system |
| 07/18/1990 | EP0227499B1 Mixed lanthanum-magnesium aluminates, process for their production and lasers using these aluminates |
| 07/11/1990 | EP0377402A2 Potassium niobate crystals and method for their preparation |
| 07/10/1990 | US4940568 Arrangement for the continuous melting of granulated silicon for a band-drawing method |
| 07/04/1990 | EP0375882A1 Axis offset measuring device for a crystal pulling apparatus |
| 07/04/1990 | CN1043537A Potassium niobate crystals |
| 07/03/1990 | US4938837 Semiconductor single crystal drawing |
| 06/26/1990 | US4937053 Crucible-die assembly to control independently the atmosphere outside and inside the crystallizing hollow, shaped body |
| 06/26/1990 | US4936949 Czochraski process for growing crystals using double wall crucible |
| 06/26/1990 | US4936947 Detectors for length, weight, internal pressure connected to adjustable heater; uniform wall thickness |
| 06/20/1990 | EP0373899A2 Monocrystal ingot pulling apparatus |
| 06/19/1990 | US4935934 Mixed lanthanide-magnesium gallates and laser using monocrystals of these gallates |
| 06/19/1990 | US4935046 Manufacture of a quartz glass vessel for the growth of single crystal semiconductor |
| 06/13/1990 | CN1042954A Apparatus for manufacturing silicon single crystals |
| 05/30/1990 | EP0370440A2 Device for measuring offset of axis crystal lifting wire |
| 05/30/1990 | CN1042575A Single crystal growth of lithium tetra borate (lbo) using the method of descending crucible |
| 05/23/1990 | EP0369626A1 Recharging device for Czochralski method |
| 05/23/1990 | EP0369574A2 An improved method of fabricating solar cells |
| 05/23/1990 | CN1008125B Process for preparing doped magnesium-lanthanide aluminogallate single crystal |
| 05/22/1990 | US4927489 Antimony doped silicon crystals; photovoltaic cells |
| 05/16/1990 | EP0368586A1 Apparatus for manufacturing silicon single crystals |
| 05/15/1990 | US4926357 Apparatus for measuring diameter of crystal |
| 05/09/1990 | EP0366698A1 Growth of semiconductor single crystals. |
| 05/05/1990 | CA2002203A1 Potassium niobate crystals |
| 05/03/1990 | WO1990004857A1 EPITAXIAL Ba-Y-Cu-O SUPERCONDUCTOR FILM |
| 05/02/1990 | CN1007856B Mixed lanthanides magnesium aluminate and laser using aluminate single crystal |
| 04/25/1990 | EP0364899A1 Apparatus and process for growing crystals of semiconductor materials |
| 04/25/1990 | CN1007768B Mixed la-mg aluminate and laser made from aluminate single-crystal |
| 04/24/1990 | US4919901 Barrier design for crucibles for silicon dendritic web growth |
| 04/19/1990 | WO1990004054A1 Process and device for pulling crystals according to the czochralski method |
| 04/18/1990 | EP0363743A2 Preparation of high purity boron |
| 04/17/1990 | US4916955 Crystal ingot lifting load measuring device |
| 04/11/1990 | CN1007522B Growing method of yag laser crystal doped with nd and ce |
| 04/10/1990 | US4915869 Mixed lanthanum-magnesium aluminates |
| 04/10/1990 | US4915775 Apparatus for adjusting initial position of melt surface |
| 04/10/1990 | US4915774 Method of manufacturing orientated substrate plates from solid semiconductor blocks from the III-V group |
| 04/10/1990 | US4915773 Process for growing shaped single crystals |
| 04/04/1990 | EP0244479B1 Process for producing a semi-isolating substrate made of thermally stable and non-dislocated iii-v material |
| 04/04/1990 | CN1041011A Method and apparatus for manufacturing silicon single crystals |
| 04/03/1990 | US4913652 Pyrolytic boron nitride crucible and method for producing the same |
| 04/03/1990 | US4913199 Arrangement for the complete emptying of quartz tanks or crucibles filled with a silicon melt following silicon band drawing |
| 03/28/1990 | EP0360659A1 Synthetic fused silica glass and method for the preparation thereof |
| 03/28/1990 | EP0199787B1 Vitreous silica |
| 03/27/1990 | US4912407 Non-contacting inductively coupled displacement sensor system for detecting levels of conductive, non-magnetic liquids, and method of detecting levels of such liquids |
| 03/27/1990 | US4911896 Drawing a single crystal silicon rod from molten polysilicon |
| 03/27/1990 | US4911895 Apparatus for growing crystals of semiconductor materials |
| 03/27/1990 | US4911780 LEC method for growing a single crystal of compound semiconductors |
| 03/21/1990 | EP0359159A2 Rotating transition for receptacles having a hot wall |
| 02/28/1990 | EP0355833A2 Method of producing compound semiconductor single crystal |
| 02/28/1990 | EP0355747A2 Method for monocrystalline growth of dissociative compound semiconductors |
| 02/28/1990 | EP0355746A2 Method for monocrystalline growth of dissociative compound semiconductors |
| 02/28/1990 | EP0355476A2 Composition for growth of homogeneous lithium niobate crystals |
| 02/28/1990 | EP0211855B1 Optical components |
| 02/27/1990 | US4904143 Apparatus for the continuous feeding of material to be melted |
| 02/27/1990 | CA1266222A1 Apparatus for replenishing a melt |
| 02/20/1990 | US4902654 Mixed lanthanide-magnesium aluminates and lasers using monocrystals of these aluminates |
| 02/06/1990 | US4898641 Controlled deviation of value of double refraction |
| 01/18/1990 | DE3910449A1 Wafer made of semiconductor material |
| 01/17/1990 | CN1006508B Solid-state image pick-up device with uniform distribution of dopant therein and production method therefor |
| 01/16/1990 | US4894206 Crucibles, pipes |
| 01/10/1990 | EP0350305A2 Method and apparatus for manufacturing silicon single crystals |
| 01/10/1990 | EP0350294A2 Method of manufacturing superconducting oxide materials |
| 12/20/1989 | CN1038134A Lithium niobate single crystal having congruent composition used in surface wave device, and manufacturing process therefor |
| 12/19/1989 | US4888142 Firing amorphous form in nonoxidizing atmosphere |
| 12/19/1989 | US4888051 Method for the zone refining of gallium |
| 12/14/1989 | WO1989012120A1 Lithium niobate single crystals with congruent structure and process for producing them |
| 12/13/1989 | CN1037999A Mixed lanthanum-magnesium aluminates, their production process and lasers using these aluminates |
| 12/13/1989 | CN1037933A Method and apparatus for manufacturing silicon single crystals |
| 12/07/1989 | DE3818674C1 Gastight penetration for rotary and/or reciprocating motion |
| 12/07/1989 | DE3818537A1 Lithiumniobat-einkristalle mit kongruenter zusammensetzung, insbesondere fuer oberflaechenwellenanordnungen, und verfahren zu deren herstellung Lithium niobate single crystals with congruent composition, in particular for oberflaechenwellenanordnungen, and processes for their preparation |
| 12/05/1989 | US4884855 Narrow-band optical absorption filter |
| 11/08/1989 | EP0340941A1 Method and apparatus for manufacturing silicon single crystals |
| 10/24/1989 | US4876438 Control of the power to the heater and the speed of movement of a crystal rod by control of the crystal rod diameter |
| 10/17/1989 | US4874458 Using a floating baffle plate |
| 10/17/1989 | US4874417 Method of purifying vitreous silica |
| 10/10/1989 | US4873062 In a sealed vessel with an inner surface of boron nitride or aluminum nitride ; gallium arsenide |
| 10/03/1989 | US4871517 Apparatus for parting wafer-shaped silicon bodies, useful for solar cells, from a silicon tape manufactured in a horizontal tape-drawing method |
| 10/03/1989 | US4871117 Low-contamination method for comminuting solid silicon fragments |
| 09/26/1989 | CA1261715A1 Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique |
| 09/21/1989 | WO1989008731A1 Growing semiconductor crystalline materials |
| 09/20/1989 | CN1035689A Mixing germanium and decolourizing technology of zinc tungstate monocrystal |
| 09/14/1989 | DE3904858A1 Method and device for controlling a melt bath |
| 09/14/1989 | DE3806918A1 Appliance for pulling single crystals |
| 09/13/1989 | EP0332516A1 Apparatus and process for the synthesis and pulling of III-V materials under low pressure |
| 09/06/1989 | EP0330698A1 PROCESS FOR PURIFYING (Nb1-xTax)2O5 AND THE PREPARATION OF KNb1-xTaxO3-CRYSTALS THEREFROM |
| 09/05/1989 | US4863554 Process for pulling a single crystal |