Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
07/2011
07/27/2011CN102134749A Dysprosium ion activated gadolinium gallium garnet novel laser crystal
07/27/2011CN102134741A Method for pulling a single crystal composed of silicon with a section having a diameter that remains constant
07/27/2011CN102134740A Camera mounting bracket of silicon single crystal furnace
07/27/2011CN102134739A Automatic crystal guide system of single crystal furnace, and automatic crystal guide method
07/27/2011CN101643932B Low texture pyrolysis born nitride (PBN) thin-wall container and preparation method thereof
07/27/2011CN101550597B Method for preparing Cr4+:Ca2GeO4 laser crystal
07/27/2011CN101457395B High-frequency coil structure capable of simultaneous producing three silicon cores and other crystal material
07/21/2011US20110176657 Single crystal scintillator material, method for producing same, radiation detector and pet system
07/21/2011US20110175202 Method For Producing Semiconductor Wafers Composed Of Silicon Having A Diameter Of At Least 450 mm, and Semiconductor Wafer Composed Of Silicon Having A Diameter of 450 mm
07/21/2011US20110174214 Crystal growing apparatus and crystal growing method
07/21/2011DE102010005100A1 Verfahren zur Herstellung von Halbleiterscheiben aus Silizium mit einem Durchmesser von mindestens 450 mm und Halbleiterscheibe aus Silizium mit einem Durchmesser von 450 mm A process for the production of semiconductor wafers of silicon having a diameter of at least 450 mm and the semiconductor wafer of silicon having a diameter of 450 mm
07/20/2011EP2345752A1 Silicon wafer and method for producing the same
07/20/2011CN201901727U Closed thermal field system for single crystal furnace
07/20/2011CN201901726U Graphite crucible for straight-pulling single-crystal furnace
07/20/2011CN201901725U Draft tube for growing silicon single crystal
07/20/2011CN201901724U Corrosion preventing lower furnace body of single crystal furnace
07/20/2011CN201901723U Secondary furnace of single crystal furnace
07/20/2011CN201901722U Heat shield for straight-pulling single-crystal furnace
07/20/2011CN201901721U Granite guide cylinder hanging device
07/20/2011CN201901720U Vacuum heating interlocking device for single-crystal furnace
07/20/2011CN201901576U Mechanically single crystal bar loading and unloading truck
07/20/2011CN1965415B Method for making polysilicon films
07/20/2011CN102132124A Method and device for continuously measuring silicon island elevation
07/20/2011CN102131963A Apparatus and method for manufacturing ingot
07/20/2011CN102127816A Method for preparing Ni3A1-based rhenium-contained moncrystal alloy with liquid metal cooling method
07/20/2011CN102127814A Ytterbium and holmium codoped lithium niobate crystals and preparation method thereof
07/20/2011CN102127813A High-efficiency mid-infrared laser crystal Pr, Er:YSGG and preparation method thereof
07/20/2011CN102127812A High-efficiency radiation-resistant intermediate infrared laser crystal Re, Er: GSGG and preparation method thereof
07/20/2011CN102127806A Quartz glass crucible and preparation method thereof
07/20/2011CN102127805A Apparatus and method for continuous casting of monocrystalline silicon ribbon
07/20/2011CN102127437A Doped group IIA rare earth oxide luminescent material and melt-process growing method thereof
07/20/2011CN101570888B Method capable of removing carbon-containing impurities for preparing solar-grade silicon crystals
07/20/2011CN101225545B Method for preparing near-stoichiometric lithium tantalate crystals
07/14/2011WO2011083898A1 Insulation device of single crystal growth device and single crystal growth device including the same
07/14/2011WO2011083529A1 Single crystal manufacturing apparatus
07/14/2011US20110170174 Doped low-temperature phase barium metaborate single crystal, the manufacturing method thereof and wave changing elements therefrom
07/14/2011US20110168081 Apparatus and Method for Continuous Casting of Monocrystalline Silicon Ribbon
07/13/2011EP2343139A1 Apparatus and method for continuous casting of monocrystalline silicon ribbon
07/13/2011CN102124150A Controlling transport of gas borne contaminants across a ribbon surface
07/12/2011US7976629 Crystal film fabrication
07/06/2011EP1026289B1 Quartz glass crucible for pulling up silicon single crystal and process for producing the same
07/06/2011CN201890952U Handheld crystal growth controller
07/06/2011CN201890951U Guide cylinder for straight pull silicon single crystal growing furnace
07/06/2011CN201890950U Air-cooling jacket for straight pull type silicon single crystal growing furnace
07/06/2011CN102115914A Mn50CoxNiySnz high-temperature ferromagnetic shape memory alloy material and preparation methods thereof
07/06/2011CN102115909A Single crystal furnace with three-side-wall graphite crucible
07/06/2011CN101381888B Method for producing silicon single crystal
07/05/2011US7972439 Method of growing single crystals from melt
07/05/2011US7971836 Supporting table having heaters inside crystal-growing furnace
06/2011
06/30/2011WO2011078243A1 Metal fluoride crystal, vacuum ultraviolet light emitting element, and vacuum ultraviolet light emitting scintillator
06/30/2011WO2011076157A1 Method and arrangement for influencing the melting convection in the production of a solid body from an electrically conductive melt
06/30/2011US20110156216 Silicon Wafer and Method For Producing The Same
06/30/2011US20110155045 Controlling the Temperature Profile in a Sheet Wafer
06/30/2011CA2785385A1 Metal fluoride crystal, vacuum ultraviolet light emitting element, and vacuum ultraviolet light emitting scintillator
06/29/2011CN201883181U Crucible with PBN (Pyrolysis Boron Nitride) and graphite composite structure for growth of compound semiconductor single crystal
06/29/2011CN201883180U Silicon single crystal growth thermal field device with low power consumption
06/29/2011CN201883179U Continuous discharging device without valve control
06/29/2011CN102112665A Generating a pumping force in a silicon melt by applying a time-varying magnetic field
06/29/2011CN102108551A Rare-earth niobate- and tantalite-doped Re'xRE1-xNbyTa1-yO4 luminous material and melt method crystal growth method thereof
06/29/2011CN102108550A Method for preventing severe volatilization during growth process of cesium triborate
06/29/2011CN102108549A Silicon wafer and method for producing the same
06/29/2011CN102108546A Method for reducing energy consumption of solar monocrystalline silicon thermal field system, and thermal field system
06/29/2011CN102108545A Thermal field system suitable for large charge amount of 90t furnace
06/29/2011CN101570884B High-frequency coil capable of drawing 16 silicon cores or other crystal materials simultaneously
06/29/2011CN101570883B High-frequency coil structure capable of drawing 19 silicon cores or other crystal materials simultaneously
06/29/2011CN101487137B High-frequency coil structure capable of producing four silicon cores and other crystal material at the same time
06/29/2011CN101457394B High-frequency coil structure capable of simultaneous producing two silicon cores and other crystal material
06/29/2011CN101457390B High-frequency coil structure capable of simultaneous producing eight silicon cores and other crystal material
06/29/2011CN101457388B High-frequency coil structure capable of simultaneous producing two silicon cores and other crystal material
06/23/2011WO2011074848A2 Plasma arc torch positioning apparatus
06/23/2011WO2011074588A1 Method for calculating temperature distribution in crucible
06/23/2011WO2011074568A1 Silica glass crucible and method for manufacturing same
06/23/2011WO2011074533A1 Single crystal pulling apparatus and single crystal pulling method
06/23/2011US20110147589 Room temperature aluminum antimonide radiation detector and methods thereof
06/23/2011US20110146564 Method for detecting diameter of single crystal, single-crystal manufacturing method by using the same and single-crystal manufacturing apparatus
06/22/2011EP2336400A2 CdTe single crystal and CdTe polycrystal, and method for producing the same
06/22/2011EP2336396A1 Graphite crucible and silicon single crystal manufacturing apparatus
06/22/2011EP1895029B1 Apparatus for producing semiconductor single crystal
06/22/2011DE112009001202T5 Einkristallherstellungsvorrichtung Einkristallherstellungsvorrichtung
06/22/2011DE112009000239T5 Silizium-Einkristall-Züchtungsvorrichtung und Quarztiegel Silicon single crystal growth apparatus and the quartz crucible
06/22/2011CN201873779U Water-electricity connection mechanism
06/22/2011CN201873777U Silicon fluid level control device
06/22/2011CN201873776U Single crystal furnace
06/22/2011CN201873775U Feeding trolley of Czochralski crystal growing furnace
06/22/2011CN1904147B Method and apparatus for growing high quality silicon single crystal, silicon single crystal and silicon wafer
06/22/2011CN102102219A Cooling device capable of increasing growth rate of single crystal furnace
06/22/2011CN101457391B High-frequency coil structure capable of simultaneous producing four silicon cores and other crystal material
06/21/2011US7964275 Silicon wafer having good intrinsic getterability and method for its production
06/16/2011WO2011071178A1 Silica glass crucible
06/16/2011WO2011071176A1 Silica glass crucible
06/16/2011WO2011070703A1 Silica vessel and process for production thereof
06/16/2011WO2011037317A3 Apparatus for growing silicon ingots, and body for the vacuum chamber of the apparatus for growing silicon ingots
06/16/2011US20110143091 Germanium ingots/wafers having low micro-pit density (mpd) as well as systems and methods for manufacturing same
06/16/2011US20110143063 Silica container and method for producing the same
06/16/2011US20110140241 Processes for production of silicon ingot, silicon wafer and epitaxial wafer , and silicon ingot
06/16/2011US20110139064 Graphite Crucible and Silicon Single Crystal Manufacturing Apparatus
06/16/2011DE112009001431T5 Einkristall-Herstellungsvorrichtung und Einkristall-Herstellungsverfahren Single crystal single crystal manufacturing apparatus and manufacturing method
06/16/2011DE10334513B4 Verfahren zur Herstellung eines Einkristalls aus einem Cerdotierten Gadoliniumsilicat A process for producing a single crystal of a cerium-doped gadolinium silicate
06/16/2011DE102009044390A1 Producing a semiconductor crystal body, useful as a substrate material for solar cells, comprises providing melt of semiconductor material in crucible, and generating crystal body from melt by gradually crystallizing semiconductor material
06/15/2011CN201864793U Protector for support used for taking single crystals
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