Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
04/2011
04/27/2011CN102031558A Apparatus and method for manufacturing vitreous silica crucible
04/27/2011CN102031557A Epitaxial wafer and production method thereof
04/27/2011CN101168850B Silicon single crystal manufacturing method and silicon wafer manufacturing method
04/26/2011US7931883 Metallurgical grade silicon produced in an electric arc furnace by carbothermal reduction contains <300 ppma boron and >100 ppma phosphorus; refinining by treating with calcium-silicate slag to remove boron 0.2-100 ppma; solidification, acid leaching, melting, directional solidification to an ingot
04/21/2011WO2011045888A1 Silica powder, silica container, and method for producing the silica powder and container
04/21/2011WO2011045186A1 Method and device for separating argon from a gaseous mixture
04/21/2011WO2010151786A3 Fused quartz horizontal furnace and assembly
04/21/2011DE10219387B4 Aus Kohlenfaser-verstärktem Kohlenstoffkompositmaterial hergestellter Schmelztiegel für ein Einkristallziehgerät Made of carbon fiber-reinforced carbon composite crucible for a Einkristallziehgerät
04/20/2011CN201801635U Seed crystal clamping head for single crystal furnace
04/20/2011CN201801634U Novel single-crystal furnace of trivalve graphite crucible
04/20/2011CN201801633U High heat efficiency single crystal furnace
04/20/2011CN201801632U Guide cylinder of single crystal furnace
04/20/2011CN201801631U Quartz crucible lifting appliance
04/20/2011CN102026914A Pretreated metal fluorides and process for production of fluoride crystals
04/20/2011CN102021652A Rare earth or Bi, Cr and Ti-doped IIA-family rare-earth oxide luminescent material and preparation method thereof
04/20/2011CN102021648A Guide cylinder antioxidation coating and preparation method thereof
04/20/2011CN101440514B Method for recovering bottom material adhered to quartz crucible
04/14/2011WO2011043552A2 Quartz crucible and method of manufacturing the same
04/14/2011WO2010056350A3 Methods for casting by a float process and associated appratuses
04/14/2011US20110086213 Method of producing a silicon carbide bulk single crystal with thermal treatment, and low-impedance monocrystalline silicon carbide substrate
04/14/2011US20110084210 Process for producing a particularly strong scintillation material, a crystal obtained by said process and uses thereof
04/13/2011EP2309038A1 Epitaxial wafer and production method thereof
04/13/2011EP1195455B1 Method for determining condition under which silicon single crystal is produced, and method for producing silicon wafer
04/13/2011CN201793813U Low-energy consumption single-crystal thermal field
04/13/2011CN201793812U Exhaust port baffle of pulling mono-crystal furnace
04/13/2011CN201793811U Furnace bottom pressing disc of straight-pulling single crystal grower
04/13/2011CN201793810U Flow guide tube of direct pulling single crystal furnace
04/13/2011CN201793809U Heavy hammer of silicon single crystal furnace
04/13/2011CN201793808U Furnace barrel heightening device for single crystal furnace
04/13/2011CN201793807U Limit switch device of single crystal furnace
04/13/2011CN201793806U Crucible carrying device
04/13/2011CN102011181A Thermal field device for growing 8-inch silicon single crystals for solar energy by Czochralski method
04/13/2011CN102011180A Thermal field structure of single crystal furnace
04/13/2011CN102011179A Special-shaped quartz crucible
04/13/2011CN102011178A Production method capable of reducing internal air holes of monocrystalline silicon
04/13/2011CN102011177A Re-feeding device for Czochralski silicon single crystal furnace
04/13/2011CN102011176A Silicon single crystal growth furnace with gas cold traps
04/13/2011CN102011175A Flow guide cylinder used for czochralski silicon single crystal growth finance
04/13/2011CN102011174A Air-cooled sleeve for straight pull type silicon single crystal growing furnace
04/13/2011CN102010120A Constant-temperature and constant-humidity pouring device
04/13/2011CN101580965B Rapid-annealing method for growing large-size sapphire single-crystal with SAPMAC method
04/13/2011CN101580963B SAPMAC method for preparing sapphire single-crystal with size above 300mm
04/13/2011CN101487136B High-frequency coil structure capable of producing six silicon cores and other crystal material at the same time
04/07/2011US20110079175 Image sensor and method for manufacturing the same
04/07/2011DE102009043003A1 Herstellung von Seltenerd-Aluminium- oder -Gallium-Granat-Kristallen aus einer fluoridhaltigen Schmelze sowie ihre Verwendung als optisches Element für die Mirolithographie sowie als Szintillator Production of rare earth-aluminum or gallium-garnet crystals from a fluoride-containing melt as well as its use as an optical element for the Miro lithography and as a scintillator
04/07/2011DE102009043002A1 Method for growing a single crystal, comprises producing a melt from a mixture containing aluminum-garnet and/or gallium-garnet and/or a rare earth element and/or a mixture of metal oxides
04/06/2011EP2304804A2 Germanium-enriched silicon material for making solar cells
04/06/2011CN201785551U Cooling structure of single crystal furnace cover
04/06/2011CN201785547U Automatic silicon crystal growth sensing mechanism applied to silicon crystal growing furnace
04/06/2011CN201785546U Heat shield for single crystal furnace
04/06/2011CN201785545U Vacuum silicon material feeding device for single crystal furnace
04/06/2011CN102007234A Single crystal growth method and single crystal pulling apparatus
04/06/2011CN102007090A Carbon fiber carbon composite molded body, carbon fiber-reinforced carbon composite material and manufacturing method thereof
04/06/2011CN102002754A Method for growing bismuth silicate (BSO) scintillation crystal by shaping and lifting
04/06/2011CN102002753A Processing method of phi 8-inch <110> czochralski silicon and thermal system thereof
04/06/2011CN101570887B High-frequency coil structure capable of drawing 19 silicon cores or other crystal materials
04/06/2011CN101311335B Dismounting and mounting device for czochralski crystal growing furnace thermal system
04/06/2011CN101048539B Single crystal wire and manufacturing method of the same
04/05/2011US7919010 Doped organic semiconductor material
04/05/2011US7918934 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot
03/2011
03/31/2011WO2011037317A2 Apparatus for growing silicon ingots, and body for the vacuum chamber of the apparatus for growing silicon ingots
03/31/2011WO2011009062A3 Coated crucibles and methods for preparing and use thereof
03/31/2011WO2010147361A3 Process chamber protective system of single crystal silicon ingot growing apparatus
03/31/2011US20110076217 Process for growing rare earth aluminum or gallium garnet crystals from a fluoride-containing melt and optical elements and scintillation made therefrom
03/30/2011EP2302109A1 Crystal growing apparatus and crystal growing method
03/30/2011EP1848844B1 Method and control unit for controlling crystal growing process by electromagnetic pumping
03/30/2011CN201778147U Sapphire growth device and quick seed-crystal replacement device thereof
03/30/2011CN201778146U Seed crystal clamping device
03/30/2011CN201778145U Single crystal furnace
03/30/2011CN201778144U Feeder of mono-crystal furnace
03/30/2011CN201778143U Single crystal furnace
03/30/2011CN101999014A Single crystal manufacturing apparatus
03/30/2011CN101999013A Method for producing photovoltaic-grade crystalline silicon by addition of doping impurities and photovoltaic cell
03/30/2011CN101994152A Process for manufacturing solar crystalline silicon P-type master alloy
03/30/2011CN101994151A Solar-grade Czochralski (CZ) silicon single crystal thermal donor control process
03/30/2011CN101387005B Material feeder for single crystal furnace
03/24/2011WO2011034284A2 Epi wafer and silicon single crystal ingot for the same and fabrication method thereof
03/24/2011WO2010147388A3 Crucible with detachable crucible for manufacturing silicon ingot
03/24/2011DE112009000986T5 Einkristall-Wachstumsverfahren und Einkristall-Ziehvorrichtung Single-crystal growth method and single crystal pulling apparatus
03/23/2011CN201773602U Four-dimensional adjustment platform for arranging apparatus
03/23/2011CN201770802U Single crystal furnace electrical control operating platform
03/23/2011CN201770799U Whisker column growth device with multiple upper furnace chambers
03/23/2011CN101988214A Preparation method of fused silica crucible for polycrystalline silicon ingot casting
03/23/2011CN101328613B Preparation of photon avalanches mechanism Zn and Er double doping lithium niobate crystal conversion material
03/23/2011CN101328612B Preparation of In, Fe and Cu three-doping lithium niobate crystal
03/23/2011CN101319392B Hafnium iron manganese three-doped lithium niobate crystal and method of producing the same
03/23/2011CN101148777B Method and device for growing gallium-mixing silicon monocrystal by czochralski method
03/22/2011US7909930 Method for producing a silicon single crystal and a silicon single crystal
03/17/2011WO2011030658A1 Composite crucible, method for producing same, and method for producing silicon crystal
03/17/2011WO2011030657A1 Silica glass crucible for pulling silicon single crystal and method for producing same
03/17/2011US20110061587 Method of producing pretreated metal fluorides and fluoride crystals
03/17/2011DE19817709B4 Verfahren für die Überwachung einer Schmelze für die Herstellung von Kristallen A method for the monitoring of a melt for the production of crystals
03/16/2011EP2295619A1 Low Defect Density Silicon Having A Vacancy-Dominated Core Substantially Free of Oxidation Induced Stacking Faults
03/16/2011EP2294005A2 Skull reactor
03/16/2011EP1154048B1 Method of manufacture of a silicon epitaxial wafer
03/16/2011CN201762481U Single crystal furnace seed crystal chuck mechanism
03/16/2011CN201762480U Multi-turn composite crucible edge for pulling single crystal furnace thermal field
03/15/2011US7906443 Controlling oxygen precipitates in silicon wafers using infrared irradiation and heating
03/15/2011US7905112 Reforming process of quartz glass crucible
03/10/2011US20110060467 Method for correcting speed deviations between actual and nominal pull speed during crystal growth
1 ... 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 ... 99