Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
09/2011
09/07/2011CN201962414U 一种适于18英寸太阳能级硅单晶生长的热场装置 One kind suitable for solar-grade silicon crystal growth 18 inches thermal field devices
09/07/2011CN201962413U 一种用于生产太阳能级硅单晶的复合层石英坩埚 A method for the production of solar grade silicon single crystal composite layer of the quartz crucible
09/07/2011CN201962412U 底部设置导热柱的夹层石英坩埚 The column bottom disposed thermally laminated quartz crucible
09/07/2011CN201962411U 能同时拉制七根硅芯的高频感应加热器 Simultaneously drawn seven silicon core of high-frequency induction heater
09/07/2011CN201962410U 一种硅棒生产用石墨软毡 A silicone soft felt graphite rod production
09/07/2011CN201962409U 一种拉硅棒的导流筒 One kind of pull the silicon rod guide tube
09/07/2011CN201962408U 直拉单晶炉的埚轴护套 Czochralski crystal furnace crucible axis jacket
09/07/2011CN201962407U 直拉硅单晶炉的复投料装置 Czochralski silicon single crystal furnace complex feeding apparatus
09/07/2011CN102174710A Semiconductor wafers of silicon and method for their production
09/07/2011CN102174706A Semiconductor sequence body
09/07/2011CN101392405B High precision temperature control method and control system in germanium single crystal growth
09/06/2011US8012258 Melt surface position monitoring apparatus in silicon single crystal growth process
09/06/2011US8012255 Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process
09/01/2011WO2011106411A2 Insulation apparatus
09/01/2011WO2011103740A1 Single crystal pulling furnace
08/2011
08/31/2011CN201952525U 单晶硅直径测量控制系统 Monocrystalline diameter measurement control system
08/31/2011CN201952524U 导模提拉法用结晶装置 Guided-mode device with crystal pulling method
08/31/2011CN201952523U 单晶炉用石墨坩埚 Crystal furnace with a graphite crucible
08/31/2011CN201952522U 一种单晶炉石墨热系统拆卸工具组 Single crystal graphite furnace heating system removal tool set
08/31/2011CN201952521U 同时拉制五根硅芯的高频感应加热器 Meanwhile drawn five silicon core of high-frequency induction heater
08/31/2011CN102171388A Lid for fused quartz crucible, fused quartz crucible and method for handling same
08/31/2011CN102168303A Method for preparing crystallization rate of monocrystal silicon 110
08/31/2011CN102168302A Double-quartz-crucible device and method for producing czochralski silicon single crystal
08/31/2011CN102168301A Graphite crucible in czochralski single crystal furnace
08/31/2011CN102168300A Thermal system for preparing heavily-doped silicon single crystal
08/31/2011CN101230485B Growing method for aluminized optical crystal removing ultraviolet absorption
08/25/2011WO2011100879A1 Monocrystalline silicon material co-doped with gallium and indium or co-doped with gallium, indium and germanium for solar batteries and manufacturing method thereof
08/25/2011WO2011034284A4 Epi wafer and silicon single crystal ingot for the same and fabrication method thereof
08/24/2011CN201942789U 一种用于生产太阳能级硅单晶的籽晶夹持装置 A seed holding means for the production of solar grade silicon single crystals
08/24/2011CN201942788U 一种直拉单晶炉坩埚旋转与升降机构 One kind of Czochralski crystal furnace crucible rotation and lifting mechanism
08/24/2011CN201942787U 一种晶体生长炉的上传动机构 A drive mechanism for a crystal growth furnace
08/24/2011CN201942786U 一种带有侧取光装置的太阳能级硅单晶生产用单晶炉 Production of solar grade silicon single crystal unit with a side light extraction using single crystal furnace
08/24/2011CN201942785U 用于生产太阳能用硅单晶的氩气流量自动调节装置 For the production of monocrystalline silicon solar argon flow with automatic adjustment device
08/24/2011CN201942784U 一种适于直拉法中20英寸硅单晶生长的热场装置 One kind suitable for Czochralski silicon crystal growth in 20 inches of thermal field devices
08/24/2011CN201942783U 一种直拉单晶炉用组合坩埚 Is a linear combination of crystal pulling crucible furnace
08/24/2011CN201942782U 一种石英坩埚 A silica crucible
08/24/2011CN201942781U 单晶炉中三瓣埚 Three single-crystal furnace crucible
08/24/2011CN201942780U 一种直拉单晶炉晶棒托架 One kind of Czochralski crystal ingot furnace bay
08/24/2011CN201942779U 一种应用在单晶炉中的热屏装置 One application in single crystal furnace heat shield device
08/24/2011CN102162133A Zirconium, erbium and ytterbium-doped lithium niobate crystal and preparation method thereof
08/24/2011CN102162130A Preparation method of sapphire monocrystalline
08/24/2011CN102162124A Method for improving axial resistivity uniformity of single crystal with heavily doped Ar
08/24/2011CN102162123A Dual-heater mobile-heat-shield type Czochralski crystal growing furnace
08/23/2011US8003072 seed crystal grown from a rare-earth oxide; dopant is Mg; increases the temperature at which cold-seeding can be performed and thus enables the growth of a wider range of bulk superconductor materials
08/23/2011US8002893 Apparatus for pulling single crystal by CZ method
08/18/2011WO2011099680A1 Single crystal cooler and single crystal grower including the same
08/18/2011WO2011098319A1 Crucible for photovoltaics
08/18/2011DE102010008162A1 Verfahren für die Herstellung von Quarzglas A process for the production of quartz glass
08/18/2011DE102009024473A1 Verfahren zum Ziehen eines Einkristalls aus Silizium A method for pulling a single crystal of silicon
08/17/2011EP2356268A2 Methods for preparing a melt of silicon powder for silicon crystal growth
08/17/2011EP1440187B1 Powder metallurgy tungsten crucible for aluminum nitride crystal growth
08/17/2011EP1290250B1 Multilayered quartz glass crucible and method of its production
08/17/2011CN201933200U 导流筒抗氧化涂层 Draft tube oxidation resistant coating
08/17/2011CN201933199U 石墨加热器 Graphite heater
08/17/2011CN201933198U 化合物半导体加热装置 Compound semiconductor heating device
08/17/2011CN201933197U 一种直拉法生长太阳能用8吋硅单晶的热场装置 One kind of Czochralski grown by 8-inch silicon single crystal solar thermal field devices
08/17/2011CN201933196U 单晶炉用石墨坩埚 Crystal furnace with a graphite crucible
08/17/2011CN201933195U 双涂层石英坩埚 Double coating quartz crucible
08/17/2011CN201933194U 单晶炉保温盖板边口 Crystal furnace insulation cover lip
08/17/2011CN102154698A Method for controlling seeding form in process of preparing large-sized sapphire single crystal by Kyropoulos method
08/17/2011CN102154687A Hook-type electromagnetic field device of full-diameter single crystal furnace
08/17/2011CN101198727B Method for growing silicon single crystal and method for manufacturing silicon wafer
08/11/2011WO2011096821A1 Sectioned crucible
08/11/2011WO2011096815A1 Apparatus and method for the production of semiconductor material foils
08/11/2011WO2011045186A4 Method and device for separating argon from a gaseous mixture
08/11/2011US20110195251 Method For Pulling A Single Crystal Composed Of Silicon From A Melt Contained In A Crucible, and Single Crystal Produced Thereby
08/11/2011US20110192727 Ion-conducting ceramic apparatus, method, fabrication, and applications
08/11/2011US20110192342 Method Of Manufacturing Dislocation-Free Single-Crystal Silicon By Czochralski Method
08/11/2011DE102010007460A1 Verfahren zum Ziehen eines Einkristalls aus Silicium aus einer in einem Tiegel enthaltenen Schmelze und dadurch hergestellter Einkristall A method for pulling a silicon single crystal from a melt contained in a crucible and single crystal produced thereby
08/10/2011EP2354279A1 Method of manufacturing dislocation-free single-crystal silicon by czochralski method
08/10/2011CN201924101U 一种单晶直拉用保温筒的取卸装置 Single crystal Czochralski taken with insulation tube unloading device
08/10/2011CN201924100U 一种带气体冷阱的硅单晶生长炉 A cold trap with a silicon single crystal growth furnace gas
08/10/2011CN201924099U 一种方便清洁的提拉炉观察窗 A convenient pull-up furnace observation window cleaner
08/10/2011CN102148155A Silicon wafer and production method therefor
08/10/2011CN102146587A Ferrozirconium-copper lithium niobate crystal and preparation method thereof
08/10/2011CN102146584A Heat shield lifting device of single crystal furnace
08/10/2011CN102146583A Method for pulling a single crystal composed of silicon from a melt contained in a crucible, and single crystal produced thereby
08/10/2011CN102146582A Method of manufacturing dislocation-free single-crystal silicon by Czochralski method
08/10/2011CN102146581A Producing method of silicon semiconductor wafer with diameter of at least 450 mm and silicon semiconductor wafer with 450 mm diameter
08/09/2011US7993454 Surface modified quartz glass crucible, and its modification process
08/04/2011US20110189325 Process and technical arrangement to produce in series single crystal penetrator rods of an alloy of 40wt% tungsten-40wt% titanium-20wt% osmium to replace depleted uranium which causes after use hazardous environmental problems
08/03/2011EP2350358A1 Ribbon crystal end string with multiple individual strings
08/03/2011CN201915169U 一种防断裂自定心精密子晶装夹结构 An anti-fracture self-centering clamping precision sub-grain structure
08/03/2011CN201915168U 一种拉制精密硅棒的防断裂同轴子晶 One kind of anti-drawn precision silicon rod coaxial sub-crystal fracture
08/03/2011CN201915167U 一种硅棒接放、搬运装置 A silicone rods take place, handling devices
08/03/2011CN201915166U 一种带有通气阀的单晶炉副炉 A deputy with crystal furnace vent furnace
08/03/2011CN201915165U 能同时拉制六根硅芯的高频感应加热器 Silicon simultaneously drawn six high-frequency induction heater
08/03/2011CN201915164U 一种单晶炉上炉体 On a single-crystal Furnace
08/03/2011CN201915163U 一种太阳能硅单晶炉的充气装置 A solar monocrystalline silicon furnace inflator
08/03/2011CN102144053A Process for forming a non-stick coating based on silicon carbide
08/03/2011CN102140690A Photoluminescent wafer as well as preparation method and application thereof
08/03/2011CN102140677A Shaft sealing structure of single-crystal furnace rotating mechanism
08/03/2011CN102140676A Carbon fiber reinforced carbon composite crucible and manufacturing method of the same
08/03/2011CN102140675A Kyropoulos method for quickly growing large-size sapphire single crystal
08/03/2011CN102140636A Method of manufacturing structure body
08/03/2011CN101319350B Single crystal manufacturing method
07/2011
07/27/2011EP2347037A1 Process for forming a non-stick coating based on silicon carbide
07/27/2011CN201908154U Irregularly-shaped quartz crucible
07/27/2011CN201908153U Thermal field exhaust device of single crystal furnace
07/27/2011CN201908152U Improved straight pulling single crystal furnace
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