Patents for C30B 13 - Single-crystal growth by zone-melting; Refining by zone-melting (2,141)
04/2001
04/05/2001WO2001023647A1 Growth in solution in a float zone of crystals of a compound or of an alloy
04/04/2001EP1088912A1 Growth in solution of compound or alloy crystals in a floating zone
04/03/2001US6210478 Providing a crucible; placing material within chamber and generating electromagnetic field to leviate portion of material; creating localized molten zone within material that causes insoluble inclusions to separate and float to surface
03/2001
03/15/2001DE19941902A1 Verfahren zur Herstellung von mit Stickstoff dotierten Halbleiterscheiben A process for producing nitrogen-doped semiconductor wafers
03/07/2001EP1081254A1 Process for producing nitrogen doped semiconductor wafers
02/2001
02/27/2001US6193796 Method of crystallizing silicon layer
01/2001
01/25/2001WO2001006041A1 Method and apparatus for production of a doped feed rod by ion implantation
01/23/2001US6176922 Method for improving crystalline thin films with a contoured beam pulsed laser
01/18/2001WO2001004370A1 Single crystal tungsten alloy penetrator and method of making
01/18/2001CA2389593A1 Single crystal tungsten alloy penetrator and method of making
01/09/2001US6171389 Methods of producing doped semiconductors
01/03/2001EP1065026A1 Method for manufacturing or repairing cooling channels in single crystal gas turbine components
12/2000
12/26/2000US6165263 Method for growing single crystal
11/2000
11/28/2000US6153125 Useful for an optical field including a laser and wave changing devices
11/22/2000CN1058760C Cerium-containing magnetic garnet single crystal and prodn. method therefor
11/21/2000US6149984 Laser irradiation processing on a film that is sensitive to impurities, such as a semiconductor film that has been subjected to laser light irradiation. another object of the invention is to facilitate cleaning irradiation apparatus.
11/15/2000CN1058536C Ground simulation method and experiment equipment for spatial fast solidification
11/07/2000US6143070 Zone melting process modified with the addition of calcium chloride which acts as a liquid encapsulant at temperatures above 660 degrees c so that crystal can grow without sticking to container
09/2000
09/28/2000WO2000056955A1 Method for controlling melt and method for growing crystal
09/27/2000CN1267751A Vertical pulling and zone melting process of producing monocrystalline silicon
09/12/2000CA2030483C Method for the accelerated making of super conductive ceramic strips or wires
09/05/2000US6113689 Method of crystallizing amorphous silicon layer
07/2000
07/18/2000US6090361 Method for producing silicon for use in solar cells
07/11/2000US6086670 Silicon wafer and method for producing the same
05/2000
05/31/2000CN1053021C Aluminium tetraborate gadolinium crystal blended with rare earth and growth method thereof
05/17/2000EP1001055A1 Gas turbine component
05/16/2000US6063304 Cerium iron oxide for optical devices
05/09/2000US6059873 Optical processing method with control of the illumination energy of laser light
03/2000
03/29/2000EP0989102A1 Process for producing amorphous material containing single-crystal or polycrystal regions and material produced
03/21/2000US6039802 Single crystal growth method
03/07/2000US6033470 Method of producing a cerium-containing magnetic garnet single crystal
03/02/2000DE19839718A1 Laser crystallization or crystal structure alteration of amorphous or polycrystalline semiconductor layers comprises paired laser pulse irradiation for extended melt time while maintaining a low substrate temperature
02/2000
02/29/2000US6030588 Zone refiner apparatus and method for purifying organic substances
02/15/2000US6024792 Of metallic super-alloys on substrates with monocrystalline structure; melting surface of substrate with energy beam,melting the material to be introduced, solidification
02/02/2000CN2361644Y Space crystal growing furnace
01/2000
01/18/2000US6014944 Apparatus for improving crystalline thin films with a contoured beam pulsed laser
01/13/2000WO2000001866A1 Method for crystallising a semiconductor material and crystallising system
11/1999
11/23/1999US5989337 Dissolving raw material in solvent heated within crucible, cooling to crystallize material without cracking, desolventizing by evaporation, removing single crystal from crucible
11/03/1999EP0830465B1 Optically fused semiconductor powder for solar cells
10/1999
10/07/1999DE19913358A1 Single crystal growth process especially for a cerium substituted yttrium-iron garnet single crystal for optical applications
10/06/1999EP0947610A2 A single crystal-manufacturing equipment and a method for manufacturing the same
08/1999
08/10/1999US5935320 Process for producing silicon semiconductor wafers with low defect density
08/03/1999US5932003 Method of producing recrystallized-material-member, and apparatus and heating method therefor
07/1999
07/20/1999US5925421 Laser irradiation method
06/1999
06/22/1999US5914059 Method of repairing metallic articles by energy beam deposition with reduced power density
04/1999
04/27/1999US5897705 Process for the production of an epitaxially coated semiconductor wafer
04/13/1999US5893948 Melting and crystallizing amorpohous silicon layers; improved field-effect mobility
04/06/1999US5891828 Disposing solvent mixture of praseodymium oxide, barium oxide or carbonate, copper oxide between feed rod of praseodymium barium coppper oxide and seed crystal, heating in inert gas/oxygen atmosphere, precipitating single crystal, heating
03/1999
03/24/1999CN1211640A 'Isocomponent floating zone' method for growing solid solution and forming phase monocrystal by crystal enclosing reaction
03/18/1999WO1999013136A1 Method for making large area single crystal silicon sheets
02/1999
02/09/1999US5868831 Process for controlling the growth of a crystal
01/1999
01/20/1999EP0892090A1 Method for manufacturing single crystal structures
12/1998
12/22/1998US5851284 Process for producing garnet single crystal
12/09/1998CN1041148C Method and apparatus for mfg. of semiconductor device
11/1998
11/24/1998US5840118 Preparing semiconductor film on substrate, directing pulsed laser beam toward substrate to selectively heat portions of film
11/18/1998CN1199017A Method of making silicon for solar cell
11/04/1998CN1197853A Single crystal growth method
10/1998
10/14/1998CN2294268Y Model crystal used for space crystal grower
10/06/1998US5817173 Method for making spherical crystals
10/06/1998US5817172 Preparation of oxide crystals
09/1998
09/30/1998EP0867405A1 Method for producing silicon for use in solar cells
09/29/1998US5815494 Laser irradiation apparatus and laser irradiation method
09/22/1998US5811327 Method and an apparatus for fabricating a semiconductor device
09/16/1998EP0864669A2 Single crystal growth method
09/16/1998EP0712382B1 Directionally solidified eutectic reinforcing fibers
09/15/1998US5808745 Method for measuring a substitutional carbon concentration
09/02/1998EP0861927A1 Method for manufacturing single crystal structures
09/01/1998US5800611 Method for making large area single crystal silicon sheets
08/1998
08/11/1998US5792258 High-frequency induction heater and method of producing semiconductor single crystal using the same
06/1998
06/09/1998US5762707 Floating zone melting apparatus
06/04/1998DE19651003A1 Large single crystal layer production
04/1998
04/28/1998US5744380 Gate oxide integrity
04/21/1998US5741359 Method and apparatus for zone-melting recrystallization of semiconductor layer
04/08/1998CN1178601A High-energy body supplying device, method of forming crystalline film, and method of producing thin-film electronic appliance
03/1998
03/25/1998EP0830465A1 Optically fused semiconductor powder for solar cells
03/18/1998EP0829559A1 Method for producing silicon wafers with a low defect-density
03/17/1998US5728213 Method of growing a rare earth silicate single crystal
03/03/1998US5723337 Method for measuring and controlling the oxygen concentration in silicon melts and apparatus therefor
01/1998
01/28/1998EP0821082A1 Process and apparatus for controlling the growth of a crystal
01/21/1998EP0819782A1 Process of forming a thin film by laser ablation
12/1997
12/17/1997CN1167842A Cerium-containing magnetic garnet single crystal and production method therefor
12/11/1997DE19617870A1 Floating zone melting apparatus for semiconductor rod
12/04/1997WO1997045827A1 Crystallization processing of semiconductor film regions on a substrate, and devices made therewith
12/04/1997DE19641737A1 Levitation apparatus
11/1997
11/25/1997US5690732 Method of automatically growing a single crystal
11/19/1997CN1165543A Method of growing single crystals
11/18/1997US5688321 Apparatus for producing a silicon single crystal by a float-zone method
11/13/1997DE19610650A1 Crucible-free floating zone crystal growth apparatus
10/1997
10/30/1997WO1997040214A1 Process for the preparation of conformed materials based on binary or ternary eutectic zirconia compounds
09/1997
09/24/1997EP0796931A1 Cerium-containing magnetic garnet single crystal and producing method thereof
09/16/1997US5667585 Method for the preparation of wire-formed silicon crystal
09/11/1997DE19702109A1 Recrystallising crystalline component especially thin film semiconductor
09/10/1997CN1158916A Ground simulation method and experiment equipment for spatial fast solidification
09/09/1997US5665664 Grain boundary-free crystalline body of manganese-based composite oxide and method for the preparation thereof
08/1997
08/28/1997DE19608314A1 Production of solid body
08/14/1997DE19605245A1 Producing crystallisation centres on the surface of substrate
08/07/1997WO1997028559A1 High-energy body supplying device, method of forming crystalline film, and method of producing thin-film electronic appliance
06/1997
06/25/1997EP0780344A2 Process and apparatus for levitating a liquid substance by means of a gaseous layer
06/20/1997CA2192750A1 Method and installation for confinement of a liquid mass by a gas layer
05/1997
05/14/1997EP0773200A1 High temperature superconducting textured shaped bodies and method for their production
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