Patents for C30B 13 - Single-crystal growth by zone-melting; Refining by zone-melting (2,141)
05/2006
05/03/2006EP1478482B1 Method of removing casting defects
05/03/2006CN1254565C Gas-phase doping-area fused silicon monocrystal production method
04/2006
04/26/2006EP1650330A1 Method of producing silicon wafer and silicon wafer
04/25/2006US7033070 Method and apparatus for measuring temperature
04/20/2006US20060084246 Manufacturing method for crystalline semiconductor material and manufacturing method for semiconductor device
04/19/2006CN1252796C Method for making amorphous silicon crystalize using mask
04/11/2006US7025827 Doped semiconductor wafer of float zone pulled semiconductor material, and process for producing the semiconductor wafer
04/05/2006EP1641963A1 Method and device for the drawing of single crystals by zone drawing
04/05/2006EP1397835B1 Method of controlling the crystal orientation of a composite structure
04/05/2006CN1249779C Method for mfg. crystal semiconductor material and method for mfg. semiconductor
04/04/2006US7022183 Semiconductor thin film and process for production thereof
03/2006
03/30/2006US20060065186 Process for producing crystalline thin film
03/29/2006EP1640431A1 Transition metal doped spinel type mgal sb 2 /sb o sb 4 /sb phosphor, laser apparatus including the same and process for producing the phosphor
03/29/2006EP1638716A1 Method and device for the fused metal production of conducting alloys
03/29/2006CN1754013A B-ga2o3 single crystal growing method, thin-film single crystal growing method, ga2o3 light-emitting device, and its manufacturing method
03/29/2006CN1247350C Method and equipment to make metal wire become monocrystalline wire
03/28/2006US7018750 Exposing the silicon layer to a laser beam through a mask having a phase shift layer; stripes having a first width separated by slits, and an overlapping blocking layer having stripes having a narrower width and parallel to the first
03/28/2006US7018468 Process for long crystal lateral growth in silicon films by UV and IR pulse sequencing
03/23/2006US20060060133 Apparatus and method for supplying raw material in Czochralski method
03/22/2006CN1749448A Germanium blending method for zone-melting silicon monocrystal by liquid smearing method
03/22/2006CN1749447A Process for finishing a single-crystal metal sheet or oriented solidification metal sheet surface
03/22/2006CN1246879C Crystallizing method
03/21/2006US7014923 Method of growing a MCrAlY-coating and an article coated with the MCrAlY-coating
03/21/2006US7014708 Method of forming a thin film transistor by utilizing a laser crystallization process
03/16/2006US20060054077 Pulse sequencing lateral growth method
03/15/2006CN1748049A An apparatus for and a method of manufacturing a single crystal rod
03/14/2006US7011709 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, thin film transistor, and display
03/14/2006US7011708 A crystallizer; high heat transfer efficiency; in which a surface of a heat transfer portion is a constantly wetted surface, a concentrate does not adhere to a wall surface and heat transfer area can be enlarged
03/14/2006US7011704 Method and device for the production of a single crystal
03/09/2006US20060048698 Methods and systems for purifying elements
03/07/2006US7009140 Laser thin film poly-silicon annealing optical system
03/02/2006DE4416543B4 Zonenschmelzvorrichtung mit einem verbesserten Suszeptor und Verfahren zum tiegelfreien Zonenschmelzen Zone melting apparatus with an improved susceptor and method of floating zone melting
03/02/2006DE102004042343A1 Method for modifying amorphous semiconductors comprises irradiating a region of the semiconductor with a laser beam to melt the region of the semiconductor up to the melting temperature of the semiconductor and further processing
03/01/2006EP1630262A1 Process for rebuilding a single crystal or directionally solidified metallic article
02/2006
02/21/2006US7001455 Method and apparatus for doping semiconductors
02/09/2006US20060027160 Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal
02/09/2006US20060027041 Melting and homogenizing a hydrogen storage alloy in a floating zone melting furnace; and gradually cooling at a cooling rate of 5 degrees C./min. or less to solidify and recover the alloy; reduced segregation, precipitates, or inclusions
02/08/2006EP1623059A2 System and method of making single-crystal structures through free-form fabrication techniques
02/02/2006US20060024858 Producing method for crystalline thin film
01/2006
01/25/2006CN1238885C Method and device for semiconductor crystallization by laser beam
01/24/2006US6989300 Method for forming semiconductor films at desired positions on a substrate
01/18/2006EP1616343A2 Apparatus and method for balanced pressure growth of group iii-v monocrystalline semiconductor compounds
01/04/2006CN1716529A Crystallization method and apparatus thereof
12/2005
12/29/2005US20050287773 Laser beam projection mask, and laser beam machining method and laser beam machine using same
12/22/2005WO2005029551A3 Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
12/22/2005US20050282408 Method for crystallizing semiconductor with laser beams
12/22/2005US20050282364 Method of fabricating a semiconductor thin film and semiconductor thin film fabrication apparatus
12/20/2005US6977775 Method and apparatus for crystallizing semiconductor with laser beams
12/14/2005CN1706993A Batch spherical semiconductor grain producing equipment and method
12/08/2005US20050272274 Apparatus for forming a semiconductor thin film
12/08/2005US20050272185 Method of fabricating a semiconductor thin film and semiconductor thin film fabrication apparatus
12/08/2005US20050269300 Laser thin film poly-silicon annealing optical system
12/06/2005US6972246 Method for manufacturing an oriented crystalline semiconductor using a pulsed laser
12/01/2005US20050264824 Method for crystallizing semiconductor with laser beams
11/2005
11/30/2005EP1600043A2 Analytical furnace with predictive temperature control
11/24/2005US20050259940 Method and apparatus for fabricating a crystal fiber
11/24/2005US20050259709 Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate
11/22/2005US6966946 Crystal production method for gallium oxide-iron mixed crystal
11/16/2005EP1595006A1 An apparatus for and a method of manufacturing a single crystal rod
11/02/2005CN1691275A Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
10/2005
10/27/2005WO2005100644A1 Method for the growth of semiconductor ribbons
10/27/2005US20050235903 Single scan irradiation for crystallization of thin films
10/25/2005US6959029 Apparatus for performing anastomosis
10/20/2005US20050233556 Method for crystallizing semiconductor with laser beams
10/13/2005US20050227504 Method for crystallizing semiconductor with laser beams
10/13/2005US20050227460 Method and apparatus for crystallizing semiconductor with laser beams
10/13/2005US20050225771 Method and apparatus for crystallizing semiconductor with laser beams
10/13/2005US20050223970 Crystallization apparatus, crystallization method, device and phase modulation element
10/13/2005US20050223967 Powder metallurgy crucible for aluminum nitride crystal growth
10/06/2005US20050217571 Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
10/05/2005CN1221470C High purity silicon production method
09/2005
09/29/2005US20050211987 Semiconductor device, manufacturing method thereof and manufacturing apparatus therefor
09/21/2005CN1670268A Method and device for growing sapphire crystal by laser
09/20/2005US6946367 Methods for forming a semiconductor thin film
09/08/2005US20050194069 Process for producing heat-resistant intermetallic compound Ni3Al foil having room-temperature ductility and heat-resistant intermetallic compound Ni3Al foil having room-temperature ductility
09/01/2005US20050188918 Device for the production of crystal rods having a defined cross-section and column-shaped polycrystallization structure by means of floating-zone continuous crystallization
09/01/2005US20050188917 Method for manufacturing crystal plate
08/2005
08/25/2005WO2005078812A1 METHOD FOR CONTROLLING CONDUCTIVITY OF Ga2O3 SINGLE CRYSTAL
08/23/2005US6932865 System and method of making single-crystal structures through free-form fabrication techniques
08/18/2005WO2005075713A1 Single crystal growing apparatus
08/18/2005US20050181136 Amorphous silicon deposition for sequential lateral solidification
08/11/2005US20050176218 Method and apparatus for manufacturing net shape semiconductor wafers
08/11/2005US20050172888 Method of producing crystalline semiconductor material and method of fabricating semiconductor device
08/04/2005US20050169330 Laser annealing apparatus and annealing method of semiconductor thin film
08/03/2005CN1649109A Laser annealing apparatus and annealing method
07/2005
07/21/2005US20050158995 Low-fluence irradiation for lateral crystallization enabled by a heating source
07/21/2005US20050157219 Terbium type paramagnetic garnet single crystal and magneto-optical device
07/14/2005WO2005063621A1 Silicon feedstock for solar cells
07/14/2005US20050153475 Microelectromechanical thin-film device
07/13/2005EP1553643A2 Laser irradiation method and method for manufacturing crystalline semiconductor film
07/13/2005CN1638897A Method of removing casting defects
07/13/2005CN1638044A Method for forming polycrystalline silicon film of polycrystalline silicon tft
07/13/2005CN1638040A Laser irradiation method and method for manufacturing crystalline semiconductor film
07/13/2005CN1637543A Silicon crystallizing device
07/07/2005WO2005053893A3 Laser thin film poly-silicon annealing optical system
06/2005
06/30/2005US20050142299 Method for forming polycrystalline silicon film of polycrystalline silicon TFT
06/30/2005US20050139786 Laser irradiation method and method for manufacturing crystalline semiconductor film
06/30/2005US20050139151 Silicon crystallizing device
06/22/2005EP1544328A1 Terbium paramagnetic garnet single crystal and magneto-optical device
06/21/2005US6908835 Method and system for providing a single-scan, continuous motion sequential lateral solidification
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