Patents for C30B 13 - Single-crystal growth by zone-melting; Refining by zone-melting (2,141)
06/2011
06/22/2011EP2334849A1 A graphite crucible for silicon electromagnetic induction heating and apparatus for silicon melting and refining using the graphite crucible
06/22/2011CN101457391B High-frequency coil structure capable of simultaneous producing four silicon cores and other crystal material
06/21/2011US7964480 Single scan irradiation for crystallization of thin films
06/08/2011CN201857438U Mechanical material loading device with safety protection device for growing monocrystalline silicon by zone melting method
06/02/2011US20110128610 Phenolic configurationally locked polyene bulk single crystals, crystalline thin films and waveguides for electro-optics and thz-wave applications
06/02/2011US20110126758 Germanium enriched silicon material for making solar cells
06/01/2011DE102010052522A1 Verfahren und Vorrichtung zur Herstellung von Einkristallen aus Halbleitermaterial Method and apparatus for producing single crystals of semiconductor material
05/2011
05/25/2011CN201842899U Laser heating directional solidification device
05/19/2011WO2011058174A1 Monocrystalline welding of directionally compacted materials
05/18/2011EP2322695A1 Device for producing a single crystal composed of silicon by remelting granules
05/18/2011EP2322314A1 Monocrystalline welding of directionally fixed materials
05/18/2011CN102066250A Method for preparing high-purity metallurgical-grade silicon
05/18/2011CN102066249A Method and apparatus for purifying metallurgical grade silicon by directional solidification and for obtaining silicon ingots for photovoltaic use
05/18/2011CN102061522A Two-step preparation method of large Al2O3-based crystal
05/18/2011CN102061514A Preparation method of gas-phase heavy-doping boron zone-melting silicon single crystal
05/18/2011CN102061512A Method for producing a single crystal of silicon by remelting granules
05/18/2011CN102061169A Garnet monocrystal fluorescent material for white light LEDs (light emitting diodes) and preparation method thereof
05/12/2011US20110107960 Method For Producing A Single Crystal Composed Of Silicon By Remelting Granules
05/12/2011DE102009052745A1 Verfahren zur Herstellung eines Einkristalls aus Silizium durch Umschmelzen von Granulat A process for preparing a single crystal of silicon by remelting of granules
05/12/2011DE102009051010A1 Vorrichtung zur Herstellung eines Einkristalls aus Silizium durch Umschmelzen von Granulat An apparatus for producing a single crystal of silicon by remelting of granules
05/11/2011EP2319961A1 Device for producing a single crystal composed of silicon by remelting granules
05/11/2011CN102051671A Device for producing a single crystal composed of silicon by remelting granules
05/04/2011EP2317078A2 Abrasive single-crystal turbine blade
05/04/2011CN102041548A Zone melting furnace for purifying crystalline silicon and method for purifying crystalline silicon
04/2011
04/26/2011US7931883 Metallurgical grade silicon produced in an electric arc furnace by carbothermal reduction contains <300 ppma boron and >100 ppma phosphorus; refinining by treating with calcium-silicate slag to remove boron 0.2-100 ppma; solidification, acid leaching, melting, directional solidification to an ingot
04/21/2011WO2011045186A1 Method and device for separating argon from a gaseous mixture
04/21/2011US20110089523 Systems and processes for forming three-dimensional circuits
04/20/2011CN102021647A Method for rapid growth of centimeter magnitude ruby crystal
04/19/2011US7927935 Method for crystallizing semiconductor with laser beams
04/13/2011CN102011188A Method for growing RFeO3 photomagnetic function crystal by secondary melting method
04/13/2011CN101487136B High-frequency coil structure capable of producing six silicon cores and other crystal material at the same time
04/06/2011EP2304804A2 Germanium-enriched silicon material for making solar cells
04/06/2011CN101570887B High-frequency coil structure capable of drawing 19 silicon cores or other crystal materials
03/2011
03/30/2011CN101994155A Nanophase doped bismuth telluride-based thermoelectric material and preparation method thereof
03/30/2011CN101184871B Line scan sequential lateral solidification of thin films
03/24/2011US20110067626 Apparatus for the fabrication of periodically poled frequency doubling crystals
03/23/2011EP2297035A1 Method and apparatus for purifying metallurgical grade silicon by directional solidification and for obtaining silicon ingots for photovoltaic use
03/23/2011EP2297034A1 Method for preparing high-purity metallurgical-grade silicon
03/16/2011CN101985776A Method for preparing bismuth telluride-based thermoelectric material
03/10/2011WO2010105617A4 Crucible for melting and crystallizing a metal, a semiconductor, or a metal alloy, component for a crucible base body of a crucible, and method for producing a component
03/09/2011CN101984150A Method of growing sapphire crystal by floating zone method
03/03/2011WO2011022988A1 ELECTROMAGNETIC INDUCTION ELECTRIC MELTING FURNACE USED FOR CONTROLLING AVERAGE NOMINAL DIAMETER OF TiC AGGREGATES IN AL-Ti-C ALLOY
03/03/2011WO2011022987A1 ELECTROMAGNETIC INDUCTION ELECTRIC MELTING FURNACE USED FOR CONTROLLING AVERAGE NOMINAL DIAMETER OF TiB2 AGGREGATES IN AL-TI-B ALLOY
02/2011
02/24/2011DE102009037286A1 Producing a single crystal from silicon through zone-pulling, comprises doping the single crystal with a doping material and producing longitudinal sections of the single crystal, in which the single crystal has a constant resistivity
02/24/2011DE102004028331B4 Verfahren zum Kristallisieren von Silicium Method of crystallizing silicon
02/23/2011CN101979719A Method for producing gas phase heavy phosphorus-doped float zone silicon single crystal
02/16/2011CN101974779A Method for preparing (110) float zone silicon crystal
02/08/2011US7884303 Laser thin film poly-silicon annealing optical system
02/02/2011CN201729906U High-orthodromic polycrystalline smelting furnace
02/02/2011CN101962801A Method for rapidly growing Nb205 crystal
01/2011
01/13/2011WO2010105617A3 Crucible for melting and crystallizing a metal, a semiconductor, or a metal alloy, component for a crucible base body of a crucible, and method for producing a component
01/05/2011DE102009031357A1 Kristalline Siliciumschicht auf einem Substrat, Verfahren zu deren Herstellung und Verwendung Crystalline silicon layer on a substrate, to processes for their preparation and use
12/2010
12/29/2010EP1924724B1 Method for recrystallising layer structures of by zone melting and the use thereof
12/29/2010EP1743055B1 Method and apparatus for the growth of semiconductor, particularly silicon, ribbons
12/09/2010US20100307406 Floating zone melting apparatus
12/08/2010CN101910473A Floating-zone melting apparatus
12/08/2010CN101525764B Method for preparing vacuum zone melting high resistant silicon single crystal
11/2010
11/23/2010US7837969 making optical components or elements from CaF2 with parallel (100)- or (110)-oriented optic axes (principle direction) by tempering at elevated temperatures and suitably adapted cooling
11/17/2010CN101457393B High-frequency coil structure capable of simultaneous producing three silicon cores and other crystal material
11/03/2010EP2246461A1 Floating-zone melting apparatus
11/03/2010CN201620202U Heating coil for growing vacuum zone-melting silicon monocrystal
10/2010
10/28/2010DE102010014110A1 Method for producing a semi-conductor crystal on base layer of floating zone process, comprises partially heating and melting a raw material crystal for forming melt zone under rotation of the raw material-crystal by induction heating coil
10/28/2010DE102005063346B4 Verfahren zur Herstellung einer einkristallinen Si-Scheibe mit annähernd rundem polygonalem Querschnitt A method for producing a monocrystalline Si wafer having an approximately polygonal cross-section round
10/27/2010EP2243153A2 Zone melt recrystallization for inorganic films
10/27/2010CN101871125A High-temperature rare earth oxide laser crystal and preparation method thereof
10/27/2010CN101871123A Method and device for growing cadmium zinc telluride crystals in mobile tellurium solvent melting zone
10/21/2010WO2010097064A3 Laser crystallisation by irradiation
10/13/2010CN201605348U 一种区熔法生长单晶硅用硅籽晶夹持器 One kind of zone melting growth of monocrystalline silicon with silicon seed holder
10/06/2010CN201598346U 水平单晶生长用长方形舟 The level of single crystal growth rectangular boat
09/2010
09/29/2010CN101845667A Method for producing high-resistivity monocrystalline silicon
09/28/2010US7804647 Sub-resolutional laser annealing mask
09/28/2010US7803520 Crystallization apparatus, crystallization method, device and phase modulation element
09/21/2010US7799131 Method for the growth of semiconductor ribbons
09/08/2010CN101824652A Preparation method of alnico magnet
08/2010
08/26/2010US20100214641 Crystallization apparatus, crystallization method, device and phase modulation element
08/18/2010CN101256947B Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device
08/11/2010CN201545933U High-frequency heating coil for growth of monocrystalline silicon by zone-melting method
08/04/2010EP2212913A1 Systems and methods for preparation of epitaxially textured thick films
08/03/2010US7767558 Method of crystallizing amorphous silicon and device fabricated using the same
07/2010
07/29/2010WO2010083818A1 Method and device for producing thin silicon rods
07/28/2010CN101787559A Heater coil device for preparing high resistance zone-melting monocrystalline silicon in vacuum condition
07/22/2010DE102009005837A1 Verfahren und Vorrichtung zur Herstellung von Siliziumdünnstäben Method and apparatus for production of silicon thin rods
07/21/2010EP2208810A1 Method for solidifying a semiconductor with adding charges of a doped semiconductor during the crystallisation
07/20/2010US7758926 Amorphous silicon deposition for sequential lateral solidification
07/20/2010US7758696 Methods and systems for monitoring a solid-liquid interface
07/08/2010DE102005043303B4 Verfahren zur Rekristallisierung von Schichtstrukturen mittels Zonenschmelzen und dessen Verwendung Method for recrystallization of layer structures by zone melting and its use
07/07/2010EP2203248A1 Method and device for producing silicon
07/07/2010CN101768773A Method and device for improving stability of single crystal when in running of zone-melting single crystal furnace
06/2010
06/29/2010US7744967 laser beam and flux of metallic powder, whereof the nature is the same as that of the metallic piece, is applied to piece to produce layer of metal, monocrystalline or directionally solidified, from the piece, wherein laser beam and flux of powder are applied coaxially on piece; gas turbine motor blades
06/24/2010US20100158783 Process and Apparatus for Producing a Single Crystal of Semiconductor Material
06/24/2010US20100157404 Laser treatment apparatus and method of manufacturing semiconductor device
06/03/2010WO2010060349A1 High-frequency coil pulling holes arrangement for producing multiple silicon cores
06/02/2010CN101717990A Application of high-purity polysilicon rod as feed rod to monocrystalline silicon zone melting method and preparation method thereof
06/01/2010US7727865 Method for controlling conductivity of Ga2O3single crystal
05/2010
05/18/2010US7718002 Crystal manufacturing apparatus
05/06/2010US20100107968 Method and apparatus for producing a single crystal
05/06/2010DE19681075B4 Verfahren zur Herstellung von Halbleiterteilchen und Vorrichtung zur Durchführung des Verfahrens Process for the preparation of semiconductor particles and a device for carrying out the method
04/2010
04/22/2010WO2010044508A1 A graphite crucible for electromagnetic induction melting silicon and apparatus for silicon melting and refining using the graphite crucible
04/22/2010WO2010044507A1 A graphite crucible for silicon electromagnetic induction heating and apparatus for silicon melting and refining using the graphite crucible
04/15/2010WO2010040283A1 Use of high-purity polycrystalline silicon rod as feed rod in monocrystalline silicon zone melting process and its manufacturing method
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