Patents for C30B 13 - Single-crystal growth by zone-melting; Refining by zone-melting (2,141)
03/2007
03/15/2007DE102005043303A1 Verfahren zur Rekristallisierung von Schichtstrukturen mittels Zonenschmelzen, hierfür verwendete Vorrichtung und dessen Verwendung Method for recrystallization of layer structures by zone melting, used for this device and its use
03/13/2007US7189665 Manufacturing method for crystalline semiconductor material and manufacturing method for semiconductor device
03/08/2007US20070051302 Method of producing crystalline semiconductor material and method of fabricating semiconductor device
03/08/2007US20070051299 Non-contact etch annealing of strained layers
03/01/2007US20070044710 Technique for monitoring dynamic processes in metal lines of microstructures
02/2007
02/28/2007CN1302156C Method for producing mono-crystalline structures
02/27/2007US7183229 Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device
02/08/2007WO2006124266A3 Method and apparatus for growing single-crystal metals
02/07/2007EP1749905A1 Method for manufacturing boride single crystal and substrate
02/01/2007US20070022944 Method for Manufacturing Boride Single Crystal and Substrate
02/01/2007US20070022942 Method and apparatus for growing high quality silicon single crystal, silicon single crystal ingot grown thereby and wafer produced from the same single crystal ingot
02/01/2007DE102005063346A1 Verfahren zur Herstellung eines einkristallinen Si-Stabes mit annähernd rundem Querschnitt A method for producing a monocrystalline Si ingot having an approximately circular cross-section
01/2007
01/31/2007EP1747701A2 Induction furnace for melting granular materials
01/30/2007US7169690 Method of producing crystalline semiconductor material and method of fabricating semiconductor device
01/30/2007US7169242 Method of removing casting defects
01/30/2007US7169226 Defect reduction by oxidation of silicon
01/24/2007CN1902129A Silicon feedstock for solar cells
01/23/2007US7166162 Terbium type paramagnetic garnet single crystal and magneto-optical device
01/18/2007WO2007006268A1 Method for production of a bead single crystal
01/18/2007US20070015069 mask includes multiple transmissive areas having a plurality of first slits for adjusting energy of the laser illumination passing through the mask; and an opaque area; for laser illumination to convert amorphous silicon into polysilicon
01/17/2007EP1743055A1 Method for the growth of semiconductor ribbons
01/17/2007CN2858676Y Electric control device for zone melting silicon single crystal furnace
01/11/2007US20070010104 Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
01/11/2007US20070006916 Solar-cell polycrystalline silicon and method for producing the same
01/09/2007US7160763 Polycrystalline TFT uniformity through microstructure mis-alignment
01/09/2007US7160387 High purity silica crucible by electrolytic refining, and its production method and pulling method
01/09/2007US7160386 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot
01/04/2007WO2007001184A1 Method for producing directionally solidified silicon ingots
01/04/2007US20070002308 Method of and apparatus for in-situ monitoring of crystallization state
12/2006
12/27/2006EP1444388B1 Mcraly-coating
12/27/2006EP1442163B1 Method of growing a mcraly-coating and an article coated with the mcraly-coating
12/26/2006US7153730 Pulse width method for controlling lateral growth in crystallized silicon films
12/26/2006US7153359 Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof
12/21/2006US20060283379 Method for growing silicon single crystal and method for manufacturing silicon wafer
12/14/2006WO2005034193A3 Single scan irradiation for crystallization of thin films
12/07/2006US20060272570 Method for producing a single crystal
12/05/2006US7144793 Method of producing crystalline semiconductor material and method of fabricating semiconductor device
11/2006
11/22/2006CN1865532A Electric control system of zone-melted silicon single crystal furnace
11/22/2006CN1865531A Process for preparing vapor doping zone-melted silicon single crystal
11/22/2006CN1865530A Process for preparing zone-melted vapor doping solar cell silicon single crystal
11/22/2006CN1865529A Process for preparing vapor pre-doping and neutron irradiation doping combined zone-melted silicon single crystal
11/22/2006CN1865528A Large-diameter zone-melting silicon single crystal growth method
11/22/2006CN1285544C Single-crystal ceramic powder preparation method, single-crystal ceramic powder and its composite material and electronic component
11/16/2006US20060254500 Line scan sequential lateral solidification of thin films
11/16/2006DE10137857B4 Verfahren zur Herstellung eines Einkristalls A process for producing a single crystal
11/15/2006EP1722450A1 Anamorphic solid state disk laser
11/15/2006EP1722449A1 Anamorphic laser and use of the same
11/14/2006US7135388 Method for fabricating single crystal silicon film
11/09/2006US20060252189 Method and apparatus for crystallizing semiconductor with laser beams
11/09/2006US20060249072 Method of synthesizing a fluoride growth material for improved outgassing
11/02/2006US20060243193 Thin film transistor and method of fabricating the same
11/02/2006DE10220964B4 Anordnung zur Herstellung von Kristallstäben mit definiertem Querschnitt und kolumnarer polykristalliner Struktur mittels tiegelfreier kontinuierlicher Kristallisation Arrangement for producing crystal rods having a defined cross-section and a columnar polycrystalline structure by means of crucible-free continuous crystallization
10/2006
10/31/2006US7128783 Thin-film crystal-structure-processed mechanical devices, and methods and systems for making
10/18/2006CN1847468A Method and apparatus for preparing major diameter single crystal
10/12/2006WO2006107926A2 Line scan sequential lateral solidification of thin films
10/12/2006WO2006105982A1 Method for producing a monocrystalline si wafer having an approximately polygonal cross-section and corresponding monocrystalline si wafer
10/12/2006US20060228565 Polycrystalline silicon rod and method for processing the same
10/12/2006DE102005016776A1 Verfahren zur Herstellung einer einkristallinen Si-Scheibe mit annähernd polygonalem Querschnitt und derartige einkristalline Si-Scheibe A process for producing a monocrystalline Si wafer having an approximately polygonal cross-section and such a monocrystalline Si wafer
10/05/2006US20060220211 Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
10/03/2006US7115487 Crystalline thin film and process for production thereof, element employing crystalline thin film, circuit employing element, and device employing element or circuit
10/03/2006US7115457 Method for crystallizing semiconductor with laser beams
09/2006
09/28/2006DE10306550B4 Verfahren und Vorrichtung zum Bilden einer Halbleiterdünnschicht Method and apparatus for forming a semiconductor thin film
09/21/2006US20060211162 Crystal-structure-processed devices, methods and systems for making
09/21/2006DE102005010953A1 Monocrystalline semiconductor layers production for electronic circuits, comprises melt recrystallization of polycrystalline two dimensional elements to form monocrystalline two dimensional elements on heatproof and insulation bottom layer
09/20/2006CN1276470C Method for producing polycrystal silicon film and evaluating device
09/14/2006DE10019601B4 Layer composite material for sliding elements and for plain bearings, particularly crankshaft bearing, camshaft bearings or connecting rod bearings, comprises primary layer made from copper alloy or aluminum alloy
09/13/2006EP1699737A1 Silicon feedstock for solar cells
09/13/2006CN2816056Y Novel zone melting furnace
09/05/2006US7102750 Method of in-situ monitoring of crystallization state
08/2006
08/31/2006US20060191471 Apparatus for and method of manufacturing a single crystal rod
08/29/2006US7097709 Laser annealing apparatus
08/24/2006US20060186412 Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus
08/24/2006US20060185772 Process for producing heat-resistant intermetallic compound Ni3Al foil having room-temperature ductility and heat-resistant intermetallic compound Ni3Al foil having room-temperature ductility
08/24/2006DE102006016325A1 Preparation of seed crystal from semiconductor material, contains slip zones used for drawing single crystals by Czochralski method or by zone drawing where crystal block is silicon rod of specific diameter
08/22/2006US7094475 MCrAlY-coating
08/16/2006EP1689552A2 Laser thin film poly-silicon annealing optical system
08/10/2006US20060177361 Crystallized film and process for production thereof
08/10/2006US20060174820 Method for producincg silicon wafer and silicon wafer
08/01/2006US7083678 Method and apparatus for making a crystal pre-melt
08/01/2006US7083676 Method of laser crystallization
07/2006
07/20/2006DE102005000865A1 Connecting of two components comprises bringing to reaction component parts of solution with aluminum content between joined together surfaces
07/18/2006US7078246 Optical processing apparatus and optical processing method
07/12/2006EP1595006B1 An apparatus for and a method of manufacturing a single crystal rod
07/05/2006CN1798879A Apparatus and method for balanced pressure growth of group ó¾-V monocrystalline semiconductor compounds
06/2006
06/29/2006US20060137599 Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby
06/22/2006DE102005060391A1 Large single crystal production by the floating zone method uses insulating components or layers to suppress electrical charges between the heating coil and the polycrystalline and grown blocks and the melt zone
06/21/2006CN1260404C Method for crystallizing amorphous silicon using nanoparticles
06/21/2006CN1260402C Combined gas-phase pre-doping and neutron irradiation doping area fused silicon monocrystal production method
06/14/2006DE112004001549T5 Einkristalliner magnetischer Granat und YIG-Bauelement Single-crystal magnetic garnet YIG and component
06/13/2006US7060355 Polycrystalline silicon rod and method of processing the same
06/08/2006US20060121369 Mask and method for crystallizing amorphous silicon
06/08/2006US20060118036 Semiconductor thin film and process for production thereof
06/08/2006DE102004058547A1 Floating zone process, for growing large diameter individual sapphire crystals, has an additional induction heating system for the heating strip with coils working at radio frequencies to set the melting zone temperature gradients
06/06/2006US7056843 Low-fluence irradiation for lateral crystallization enabled by a heating source
06/06/2006US7056810 Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
06/06/2006US7056382 Excimer laser crystallization of amorphous silicon film
05/2006
05/30/2006CA2423146C A method of welding single crystals
05/24/2006DE19641737B4 Vorrichtungen und Verfahren zur Levitation von nichtmagnetischen Festkörper-, Gas- und/oder Flüssigkeitsvolumina sowie die Verwendung der Vorrichtungen und der Verfahren Devices and methods for non-magnetic levitation of solid-state, gas and / or liquid volumes and the use of the devices and the method
05/16/2006US7046715 Method for suppressing energy spikes of a partially-coherent beam using triangular end-regions
05/04/2006US20060090695 Heat shield and crystal growth equipment
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 ... 22