Patents for C30B 13 - Single-crystal growth by zone-melting; Refining by zone-melting (2,141)
01/2009
01/07/2009CN201176467Y Crystal clamping device
01/06/2009US7473621 Producing method for crystalline thin film
12/2008
12/17/2008CN100444320C Method for manufacturing semiconductor device, and laser irradiation apparatus
12/10/2008CN100442440C Forming method for semiconductor thin film and forming device for semiconductor thin film
12/03/2008EP1689552A4 Laser thin film poly-silicon annealing optical system
11/2008
11/27/2008US20080289573 Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus
11/25/2008US7456084 Method of using a setter having a recess in manufacturing a net-shape semiconductor wafer
11/25/2008US7455731 Polycrystalline silicon rod and method for processing the same
11/06/2008WO2008133205A1 Silicon crystal material and method for manufacturing fz silicon single crystal by using the same
11/05/2008CN100431100C Method for forming polycrystalline silicon film
11/04/2008US7445674 Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
10/2008
10/30/2008WO2008128781A1 Method for restructuring semiconductor layers
10/30/2008WO2008128378A1 Vertical pulling and zone melting method for producing monocrystalline silicon
10/23/2008WO2008125104A1 Method and apparatus for producing a single crystal
10/23/2008CA2688739A1 Method and apparatus for producing a single crystal
10/14/2008US7435667 Method of controlling polysilicon crystallization
10/08/2008CN201128210Y Zone-melting polycrystal hexagonal pyramid cutting device
10/07/2008US7431766 Crystal-structure-processed devices, methods and systems for making
09/2008
09/25/2008DE10313037B4 Verfahren zur Herstellung einer Wasserstoffspeicherlegierung A process for producing a hydrogen storage alloy
09/17/2008EP1969164A2 Non-spherical semiconductor nanocrystals and methods of making them
09/03/2008CN101256947A Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device
09/03/2008CN101255602A Non-crucible growing method for magneto-optic rear earth ferrite crystal
08/2008
08/28/2008US20080206123 Silicon feedstock for solar cells
08/27/2008EP1961702A1 METALLIC ELECTROCONDUCTIVE 12Cao·7Al2O3 COMPOUND AND PROCESS FOR PRODUCING THE SAME
08/20/2008EP1291456B1 Polycrystalline silicon rod and method for processing the same
08/19/2008US7413604 Process for producing polysilicon film
08/19/2008US7413589 Melting and homogenizing a hydrogen storage alloy in a floating zone melting furnace; and gradually cooling at a cooling rate of 5 degrees C./min. or less to solidify and recover the alloy; reduced segregation, precipitates, or inclusions
08/12/2008US7410848 Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus
08/12/2008US7410508 Apparatus for crystallizing semiconductor with laser beams
08/07/2008WO2008093576A1 Silicon crystalline material and method for manufacturing the same
08/06/2008CN100409404C Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus
08/06/2008CN100408717C Preparation of magnetic driven memory alloy monocrystal by zone refining orientation coagulation method
07/2008
07/31/2008US20080182424 Method for selectively controlling lengths of nanowires
07/29/2008US7404670 Analytical furnace with predictive temperature control
07/17/2008WO2008084529A1 Floating zone melting apparatus
07/16/2008CN100403142C Crystallizing apparatus, crystallizing method, parts and phase modulation component
07/02/2008CN101213318A Method and apparatus for growing single-crystal metals
06/2008
06/12/2008US20080135785 Method of and apparatus for manufacturing semiconductor thin film, and method of manufacturing thin film transistor
06/12/2008US20080134957 Powder metallurgy crucible for aluminum nitride crystal growth
06/11/2008CN100394548C Method for preparing polycrystalline silicon layer and light shield
06/10/2008US7384476 Method for crystallizing silicon
06/04/2008CN100392803C Crystallization method and apparatus thereof
06/03/2008US7381392 For producing directionally solidified Czochralski, float zone or multicrystalline silicon ingots, thin sheets and ribbons for the production of silicon wafers containing: 0.3 to 5.0 ppma boron, 0.1 to 10 ppma phosphorus, less than 150 ppma metallic elements and less than 100 ppma carbon
05/2008
05/28/2008EP1924724A1 Method for recrystallising layer structures of by zone melting, device for carrying out said mehtod and the use thereof
05/22/2008US20080118754 Single crystal silicon rod fabrication methods and a single crystal silicon rod structure
05/21/2008CN101184871A Line scan sequential lateral solidification of thin films
05/07/2008CN101174617A Manufacturing method for semiconductor device, semiconductor device, and electronic equipment
04/2008
04/30/2008CN100385326C Silicon crystallizing device
04/29/2008US7364620 Method of purifying alkaline-earth and alkali-earth halides for crystal growth
04/24/2008US20080096043 Process and Equipment For Obtaining Metal Or Metal Matrix Components With A Varying Chemical Composition Along The Height Of The Component And Components Thus Obtained
04/24/2008DE10328618B4 Verfahren und Vorrichtung zur schmelzmetallurgischen Herstellung von Magnetlegierungen auf Nd-Fe-B-Basis Method and apparatus for melt-metallurgical manufacture of magnetic alloys, Nd-Fe-B-base
04/22/2008US7361219 Method for producing silicon wafer and silicon wafer
04/22/2008US7361218 Method and apparatus for fabricating a crystal fiber
04/15/2008US7357963 Apparatus and method of crystallizing amorphous silicon
04/08/2008US7354810 Method of and apparatus for manufacturing semiconductor thin film, and method of manufacturing thin film transistor
04/03/2008WO2008038689A1 Silicon single crystal manufacturing method, silicon single crystal, silicon wafer, apparatus for controlling manufacture of silicon single crystal, and program
04/02/2008CN201043195Y Double-layer quartz ampoule for material zone melting growth in space microgravity environment
04/01/2008US7351282 Cutting method and apparatus for ingot, wafer, and manufacturing method of solar cell
03/2008
03/27/2008US20080073650 Fabrication method for polycrystalline silicon thin film and apparatus using the same
03/26/2008EP1902163A1 Method for production of a bead single crystal
03/26/2008CN100377294C Manufacturing method of single crystal silicon film
03/19/2008EP1901335A1 Heating device of the light irradiation type
03/19/2008CN100376044C Method for producing high-temperature superconductors
03/18/2008US7345746 Method of and apparatus for in-situ monitoring of crystallization state
03/13/2008US20080062498 Apparatus for crystallizing semiconductor with laser beams
03/12/2008CN100375233C Fabrication method for polycrystalline silicon thin film and display device fabricated using the same
03/12/2008CN100374626C Method and device for growing sapphire crystal by laser
03/11/2008US7341884 Thin-film microelectromechanical device fabrication process
03/06/2008WO2008026931A1 Method and equipment for manufacturing multi-crystalline solar grade silicon from metallurgical silicon
03/06/2008US20080053372 Crystal manufacturing
02/2008
02/27/2008CN100371505C Germanium blending method for zone-melting silicon monocrystal by liquid smearing method
02/26/2008US7335261 Apparatus for forming a semiconductor thin film
02/26/2008US7335260 Laser annealing apparatus
02/26/2008US7335257 Apparatus for and method of manufacturing a single crystal rod
02/20/2008CN201024230Y High-frequency coil capable of simultaneously producing multiple silica cores or other crystal material
02/20/2008CN201024229Y High-frequency coil capable of simultaneously producing five silica cores or other crystal material
02/20/2008CN201024228Y High-frequency coil capable of simultaneously producing four silica cores or other crystal material
02/20/2008CN201024227Y High-frequency coil capable of simultaneously producing two silica cores or other crystal material
02/20/2008CN201024226Y High-frequency coil capable of simultaneously producing seven silica cores or other crystal material
02/20/2008CN201024225Y High-frequency coil capable of simultaneously producing six silica cores or other crystal material
02/20/2008CN201024224Y High-frequency coil capable of simultaneously producing three silica cores or other crystal material
02/20/2008CN201024223Y High-frequency coil capable of simultaneously producing two silica core or other crystal material
02/20/2008CN100370065C B-ga2o3 single crystal growing method, thin-film single crystal growing method, ga2o3 light-emitting device, and its manufacturing method
02/14/2008US20080035863 Single scan irradiation for crystallization of thin films
02/14/2008US20080035051 System and method for crystal growing
02/13/2008CN101122046A Low energy consumption purifying and preparing method for polycrystalline silicon raw material
02/07/2008US20080029019 Method For Producing Directionally Solidified Silicon Ingots
02/05/2008US7326876 Sequential lateral solidification device
02/05/2008US7326297 Device for the production of crystal rods having a defined cross-section and column-shaped polycrystallization structure by means of floating-zone continuous crystallization
02/05/2008US7326295 Fabrication method for polycrystalline silicon thin film and apparatus using the same
01/2008
01/31/2008DE10304533B4 Bead-Kristall sowie Verfahren zur Herstellung eines Bead-Kristalls und Verwendung Bead-crystal and methods of making and using a bead crystal
01/31/2008DE102004042343B4 Verfahren und Vorrichtung zur Modifikation von amorphen Halbleitern mittels Laserstrahlung Method and apparatus for modification of amorphous semiconductors by means of laser radiation
01/30/2008CN100365760C Method for manufacturing semiconductor device, semeconductor device and electronic product
01/16/2008CN100362146C Terbium paramagnetic garnet single crystal and magneto-optical device
01/10/2008DE10329332B4 Kristallisationsverfahren und Maske zum sequentiellen Querverfestigen sowie Vorrichtung diese benutzend Crystallization process and mask for sequential cross solidifying and this device benutzend
01/03/2008DE10204178B4 Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Halbleitermaterial Method and apparatus for producing a single crystal of semiconductor material
01/02/2008CN200999270Y High-frequency coil capable of producing three silicon cores or other crystal material once
01/02/2008CN200999269Y High-frequency coil capable of producing six silicon cores or other crystal material once
12/2007
12/27/2007US20070295266 Method for Synthesizing Semiconductor Quantom Dots
12/27/2007DE102006028243A1 Device for crystallizing an amorphous silicon layer on a substrate, for the production of liquid crystal display, comprises an excimer laser, a mask, an imaging objective for imaging the mask on the substrate and a deflector for laser ray
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