Patents for C30B 13 - Single-crystal growth by zone-melting; Refining by zone-melting (2,141)
09/1990
09/11/1990US4956334 Method for preparing a single crystal of lanthanum cuprate
08/1990
08/28/1990US4951881 Process for crushing hafnium crystal bar
08/21/1990US4950643 Coating substrate with solution, heating in oxygen to remove solvent, decompose precursor, and crystallize product
08/16/1990EP0382648A1 Process and apparatus for recrystallization of semiconductor layer
08/08/1990EP0174003B1 Holder for ingot and crucible
08/08/1990CN2060214U Building block type high-frequency cold crucible
07/1990
07/31/1990US4944835 Seeding process in zone recrystallization
07/18/1990EP0227499B1 Mixed lanthanum-magnesium aluminates, process for their production and lasers using these aluminates
07/17/1990US4942279 RF induction heating apparatus for floating-zone melting
06/1990
06/19/1990US4934446 Apparatus for recrystallization of thin strip material
06/05/1990US4931945 Method of controlling floating zone
05/1990
05/22/1990US4927619 Diamond single crystal
05/01/1990US4921026 High purity
04/1990
04/17/1990US4918520 Device for detecting the position of crystallization interface
04/10/1990US4915869 Mixed lanthanum-magnesium aluminates
03/1990
03/29/1990DE3832896A1 Arrangement for floating zone melting
03/27/1990US4912528 Trace metals analysis in semiconductor material
03/21/1990EP0359159A2 Rotating transition for receptacles having a hot wall
03/06/1990US4906821 Resistor for the treatment of materials
02/1990
02/13/1990US4900887 Floating zone drawing circuitry for semiconductor rods
01/1990
01/30/1990CA1265207A1 Laser furnace and method for zone refining of semiconductor wafers
01/18/1990DE3824127A1 Appliance for heat treatment of the surface of a substrate, especially for crystallising polycrystalline or amorphous substrate material
01/03/1990EP0349117A2 Trace metals analysis in semiconductor material
12/1989
12/26/1989US4889583 Capping technique for zone-melting recrystallization of insulated semiconductor films
12/20/1989EP0346987A1 A method of forming thin defect-free monocrystalline strips of semiconductor materials on insulators
12/14/1989WO1989012317A1 Process and device for crystallization of thin semiconductor layers on a substrate material
12/14/1989WO1989012031A1 Superconducting fibers and method of manufacture
12/13/1989EP0345618A2 Polycrystalline silicon
12/13/1989CN1037999A Mixed lanthanum-magnesium aluminates, their production process and lasers using these aluminates
12/12/1989US4886647 Supporting apparatus for semiconductor crystal rod
12/06/1989EP0344812A2 Method of manufacturing superconductor of ceramics superconductive material
10/1989
10/24/1989US4876438 Control of the power to the heater and the speed of movement of a crystal rod by control of the crystal rod diameter
10/18/1989EP0148946B1 Method of producing a chrysoberyl single crystal
10/10/1989US4873063 Apparatus for zone regrowth of crystal ribbons
10/04/1989EP0335794A1 Process for preparing a HgCdTe crystal ingot
09/1989
09/27/1989EP0334093A2 Conductive articles and processes for their preparation
09/26/1989CA1260366A1 Method of forming magnetostrictive rods from rare earth-iron alloys
09/20/1989EP0333603A1 Process for the production of a layer of silicon on an insulator
09/12/1989US4866230 Method of and apparatus for controlling floating zone of semiconductor rod
09/12/1989US4866007 Method for preparing single-crystal ZnSe
09/12/1989CA1259426A1 Method of producing soi devices
09/06/1989EP0331360A1 Method of preparing an oxide high-temperature superconducting material
08/1989
08/24/1989DE3804083A1 Process for preparing a polycrystalline semiconductor material, polycrystalline rod and single crystal of such a material
08/17/1989DE3841517A1 Method for the production of a workpiece composed of a nickel-based superalloy hardened by oxide dispersion and consisting of a single crystal with a preferential longitudinal direction
08/15/1989US4857249 Fabrication of rods of uniform high density from powders of refractory materials
08/01/1989US4853076 Heat treatment while crystallizing to produce tensile stress which produces electron mobility
07/1989
07/26/1989EP0087426B1 Lateral epitaxial growth by seeded solidification
07/25/1989US4851628 Method for the crucible-free floating zone pulling of semiconductor rods and an induction heating coil therefor
06/1989
06/28/1989CN1004640B Preparation of mgo.lao.al2o3.ndo single crystal
06/27/1989US4842704 Magnetron deposition of ceramic oxide-superconductor thin films
06/14/1989EP0319858A2 Method of controlling floating zone
05/1989
05/30/1989CA1254718A1 Purification of cd and te by zone refining
05/23/1989US4833287 Single-turn induction heating coil for floating-zone melting process
05/18/1989WO1989004387A1 Improved zone melt recrystallization method and apparatus
05/18/1989WO1989004386A1 Improved zone melt recrystallization apparatus
05/09/1989CA1253775A1 Method of and apparatus for growing crystals
05/02/1989CA1253421A1 Bar and crucible magnetic suspension for crystal- growing apparatus
04/1989
04/26/1989EP0313481A1 Process for the recrystallisation of thin films
04/04/1989US4818500 Two-dimensional mixing of melt material to improve homogeneity of dopant
03/1989
03/07/1989US4811349 Chromium, other group 1a-2-3 metal fluoride lasers
01/1989
01/18/1989EP0182870B1 Method and apparatus for reducing temperature variations across a semiconductor wafer during heating
01/10/1989US4797525 Induction heater for floating zone melting
01/10/1989US4797174 Process and apparatus for the continuous checking of the supermelting of the solidification front of a monocrystal during formation and application to the checking of the growth of a crystal
12/1988
12/13/1988US4790871 Strip-shaped films of metals, a process and an apparatus for the production thereof and the use thereof
12/07/1988EP0294311A1 Automatic control of crystal rod diameter
12/07/1988EP0294047A1 Minimizing carbon content of semiconductor materials
12/07/1988EP0293757A2 Process and apparatus to determine a parameter for the transition region between crystal and melt
11/1988
11/30/1988EP0292920A1 RF Induction heating apparatus
11/30/1988EP0292919A1 Semiconductor rod zone melting apparatus
11/17/1988EP0290854A1 Device for detecting the position of crystallization interface
11/17/1988EP0290599A1 Fabrication of rods of uniform high density from powders of refractory materials.
11/15/1988US4784723 Method for producing a single-crystalline layer
11/09/1988EP0289507A1 Method of forming single crystal silicon using spe seed and laser crystallization
11/02/1988EP0288880A1 Single-turn induction heating coil for the floating-zone melting process
11/02/1988EP0288709A1 Method for preparing a single crystal of lanthanum cuprate
11/02/1988EP0288639A1 Supporting apparatus for semiconductor crystal rod
11/02/1988EP0288605A2 Method of and apparatus for controlling floating zone of semiconductor rod
10/1988
10/25/1988US4780590 Laser furnace and method for zone refining of semiconductor wafers
10/04/1988US4775443 Induction of electrical currents to control heat loss
09/1988
09/28/1988CN88105362A Gasification-protecting coat for silicon film during local melting recrystallization
09/27/1988US4773964 Process for the production of an oriented monocrystalline silicon film with localized defects on an insulating support
09/21/1988EP0282998A2 Method for preparing single-crystal ZnSe
08/1988
08/23/1988US4765925 Solid state laser hosts
08/23/1988US4765863 Creating adaptation zone from monocrystalline germ
07/1988
07/05/1988US4755256 Method of producing small conductive members on a substrate
07/05/1988US4755220 Materials resistant to metal and salt melts, their production and their use
06/1988
06/21/1988US4752590 Method of producing SOI devices
06/21/1988US4752451 Apparatus for producing a strain-free monocrystal of a crystalline ferroelectric compound
06/16/1988WO1988003918A3 Fabrication of rods of uniform high density from powders of refractory materials
06/07/1988US4749837 Induction heating coil for the floating zone pulling of crystal rods
06/07/1988US4749438 Method and apparatus for zone recrystallization
06/07/1988CA1237641A1 Method of controlled, uniform doping of floating zone silicon
06/02/1988WO1988003918A2 Fabrication of rods of uniform high density from powders of refractory materials
05/1988
05/25/1988EP0268166A2 Molten metal and fused salt resistant materials, their production and application
04/1988
04/26/1988US4740264 Liquid encapsulated float zone process and apparatus
04/12/1988US4737233 Zone melting, resolidifying; focused radiation
03/1988
03/15/1988CA1234035A1 Fabrication of single crystal fibers from congruently melting materials
03/02/1988EP0257917A2 Method of producing soi devices
03/01/1988US4728388 Process for producing a monocrystal of a compound by crystallizing a polycrystal of said compound by transferring a solvent zone
02/1988
02/02/1988US4722764 Crucible-free zone pulling of polycrystalline rod crucible-free zone pulling of polycrystalline rod
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