Patents for C30B 13 - Single-crystal growth by zone-melting; Refining by zone-melting (2,141)
05/1985
05/29/1985EP0142666A2 Process for producing monocrystalline silicium rods free of dislocations
05/28/1985US4519850 -molten metal layer; themperature gradient
05/08/1985EP0140774A1 Process for making a single-crystal semiconductor layer on an insulating substrate
05/08/1985EP0140739A1 Apparatus for tensioning a thin sheet
05/08/1985EP0140239A2 Apparatus and method for growing doped monocrystalline silicon semiconductor crystals using the float zone technique
05/07/1985CA1186474A1 Process and apparatus for electromagnetically casting or reforming strip materials
04/1985
04/11/1985WO1985001523A1 Fabrication of single crystal fibers from congruently melting polycrystalline fibers
04/09/1985US4510015 From polycrystalline to macrocrystalline structure
03/1985
03/19/1985CA1184095A1 Process and apparatus for recrystallization of thin strip material
02/1985
02/13/1985EP0133084A1 Process for making bismuth-germanate single crystals with a high scintillation efficiency
01/1985
01/31/1985WO1985000392A1 Chrysoberyl single crystal showing iridescent effect and process for its preparation
12/1984
12/27/1984EP0129159A1 Process and apparatus for production of monocrystalline and macrocrystalline layers, by example for photovoltaic cells
12/20/1984WO1984004935A1 Process and apparatus for production of monocrystalline and macrocrystalline layers, by example for photovoltaic cells
12/19/1984EP0128159A1 Apparatus and method for thermally treating a semiconductor substrate
11/1984
11/07/1984EP0124261A1 Process for producing monocrystalline layer on insulator
11/07/1984EP0123863A2 Tape foils made of metal, process and apparatus for their manufacture, and their application
10/1984
10/30/1984US4479846 Method of entraining dislocations and other crystalline defects in heated film contacting patterned region
09/1984
09/25/1984US4473433 Heating a strip to melting point
08/1984
08/15/1984EP0115715A1 Process for elaborating ternary or quaternary semiconductor compounds
08/14/1984US4465546 Selenides, tellurides, arsenides, phosphides
08/14/1984US4465527 Method for producing a group IIB-VIB compound semiconductor crystal
08/01/1984EP0114736A1 Method of controlled, uniform doping of floating zone silicon
07/1984
07/05/1984WO1984002540A1 Apparatus and method for thermally treating a semiconductor substrate
04/1984
04/25/1984EP0106722A1 Semiconductor heat treatment apparatus
04/25/1984EP0106547A2 A method of manufacturing an oxide single crystal
04/24/1984US4444728 Iridium-rhenium crucible
04/18/1984EP0105347A1 Temperature gradient zone melting process and apparatus.
04/17/1984CA1165669A1 Method of making monocrystalline ternary semiconductor compounds
04/10/1984CA1165469A1 High voltage diode structures and method for their preparation
03/1984
03/13/1984US4436578 Method of setting a stable melting zone in a semiconductor crystalline rod during crucible-free zone melting thereof
03/07/1984EP0102130A1 Method of growing monocrystalline bodies of volatile compounds
03/07/1984EP0102054A1 Method for growing GaAs single crystal by using floating zone
03/07/1984EP0101762A1 Process for the thermomigration of liquid phases, and apparatus for carrying out this process
02/1984
02/01/1984EP0099486A1 Diamond single crystals, a process of manufacturing and tools for using same
01/1984
01/31/1984US4428646 Optical fibers having crystalline material and method of making same
01/24/1984US4427638 Apparatus for semiconductor ribbon-to-ribbon conversion
12/1983
12/21/1983EP0096298A1 Process for producing polycrystalline silicon bars suitable for subsequent zone refining
12/07/1983EP0095757A1 Process for making polycrystalline silicon ingots suitable for subsequent zone melting
12/07/1983EP0095756A1 Process for making polycrystalline silicon ingots
12/07/1983EP0095707A1 Process for making polycrystalline silicon ingots suitable for subsequent zone melting
12/06/1983US4419177 Process for electromagnetically casting or reforming strip materials
11/1983
11/16/1983EP0093981A1 Method of producing a single-crystal silicon film
10/1983
10/27/1983WO1983003710A1 Temperature gradient zone melting process and apparatus
10/19/1983EP0091806A2 A method for producing a single crystalline semiconductor layer
10/18/1983US4410471 Ribbon-to-ribbon conversion with shaped molten zone
10/18/1983US4410392 Crystallization, stress relieving
10/11/1983US4408658 Apparatus and method for heating a material in a transparent ampoule
09/1983
09/28/1983EP0089610A1 Process for the production of silicon, especially applicable to solar cells
09/07/1983EP0088004A2 Method for producing oriented islands of single crystal films
09/07/1983EP0087426A1 Lateral epitaxial growth by seeded solidification.
08/1983
08/16/1983US4399116 Containing a small amount of oxygen
08/16/1983US4398974 Semiconductors
07/1983
07/19/1983US4394183 Freezing interface, solubility, concentration
07/05/1983US4392230 Method and apparatus for the manufacture of silicon by crucible-free zone melting
05/1983
05/03/1983US4381598 Method of making anode and cathode connections for electromigration
05/03/1983CA1145859A1 Photo-induced temperature gradient zone melting
04/1983
04/12/1983CA1144363A1 Process and arrangement for the zonal heating or cooling of elongate treatment members
02/1983
02/08/1983US4372989 Process for producing coarse-grain crystalline/mono-crystalline metal and alloy films
02/01/1983US4371421 Lateral epitaxial growth by seeded solidification
01/1983
01/26/1983EP0070760A1 Process for treating a liquid mass without contacting the walls of an apparatus, and application of this process to the formation of microgravity materials
12/1982
12/21/1982US4365155 Scintillator with ZnWO4 single crystal
12/07/1982US4362501 Process and arrangement for the zonal heating or cooling of elongate treatment members
11/1982
11/30/1982US4361716 Current lead-in of the coaxial type for sealing to a container wall
11/02/1982US4356861 Process for recrystallization of thin strip material
10/1982
10/28/1982WO1982003639A1 Lateral epitaxial growth by seeded solidification
09/1982
09/22/1982EP0060744A1 Method of preparing Hg1-x Cdx Te crystals
08/1982
08/19/1982WO1982002726A1 Growth of structures based on group iv semiconductor materials
08/10/1982US4343832 Semiconductor devices by laser enhanced diffusion
06/1982
06/30/1982EP0054657A1 Floating zone melting process
06/30/1982EP0054656A1 Floating zone melting process
05/1982
05/25/1982US4331827 Method of producing current lead-ins having coaxial construction
05/25/1982US4331548 Ferrite single crystal and magnetic head containing the same
04/1982
04/20/1982US4325777 Method and apparatus for reforming an improved strip of material from a starter strip of material
04/14/1982EP0049507A1 A process and apparatus for restructuring thin strip material, especially semi-conductor material
04/14/1982EP0049453A1 Process and apparatus for electromagnetically casting or reforming strip materials
04/06/1982US4323418 Melted by radio frequency induction
04/06/1982US4323417 Method of producing monocrystal on insulator
03/1982
03/09/1982US4318753 Thermal treatment and resultant microstructures for directional recrystallized superalloys
02/1982
02/10/1982EP0045689A1 Process for the removal of boron from silicon by zone-melting with a reactive plasma
02/09/1982USRE30863 Method for crucible-free zone meeting of semiconductor crystal rods
01/1982
01/13/1982EP0043776A1 Alumina-based mixed oxide compounds, manufacturing process and use thereof
12/1981
12/29/1981US4308474 Rare earth-iron magnetostrictive materials and devices using these materials
12/15/1981US4305777 Under oxygen partial pressure
11/1981
11/24/1981US4302279 Process for producing ferrite single crystal for high frequency
09/1981
09/29/1981US4292487 Method for initiating the float zone melting of semiconductors
08/1981
08/26/1981EP0034283A2 Process and apparatus for the zonal heating or cooling of elongated workpieces
08/25/1981US4285760 Zone purification of cylindrical ingots
06/1981
06/30/1981CA1104214A1 Rf induction heating circuits for float zone refining of semiconductor rods
06/23/1981US4275035 Apparatus for electrical feed of a heater in a crystal-growing vessel
06/02/1981US4270972 Method for controlled doping semiconductor material with highly volatile dopant
05/1981
05/19/1981CA1101317A1 Method of manufacturing a rod of crystalline material
05/19/1981CA1101316A1 Apparatus for zone refining semiconductor rods
05/12/1981US4267154 Apparatus for manufacturing high quality crystals
03/1981
03/24/1981US4258009 Large crystal float zone apparatus
03/24/1981US4257841 Stabilizing and supporting apparatus for float zone refined semiconductor crystal rod
03/24/1981US4257824 Photo-induced temperature gradient zone melting
03/17/1981US4256531 Process for producing single crystal of yttrium-iron garnet or solid solution thereof
03/10/1981US4255390 Increased surface area for greater heat-exchanging efficiency; fractional solidification; purification; separation
02/1981
02/19/1981WO1981000486A1 Photo-induced temperature gradient zone melting
01/1981
01/07/1981EP0021087A1 Method of preparing macrocrystalline or monocrystalline films of metals or alloys and application of the method to the manufacture of semiconductor circuits and contact electrodes
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