| Patents for C30B 13 - Single-crystal growth by zone-melting; Refining by zone-melting (2,141) |
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| 05/30/2012 | CN102021647B Method for rapid growth of centimeter magnitude ruby crystal |
| 05/30/2012 | CN101824652B Preparation method of alnico magnet |
| 05/23/2012 | CN202226956U High-frequency coil for producing eight or nine silicon core drip-shaped and racket-shaped combination drawing holes |
| 05/23/2012 | CN202226955U High frequency coil for producing water-drop-shaped or bat-shaped combination drawing hole with six or seven silicon cores |
| 05/23/2012 | CN202226954U High frequency coil for producing bat-shaped drawing hole structure with six or seven silicon cores |
| 05/23/2012 | CN202226953U High frequency coil for producing water-drop-shaped or bat-shaped combination drawing hole with five or six silicon cores |
| 05/23/2012 | CN202226952U High frequency coil for producing water-drop-shaped or bat-shaped combination drawing hole with eight or nine silicon cores |
| 05/23/2012 | CN202226951U High frequency coil for producing water-drop-shaped drawing hole structure with eight or nine silicon cores |
| 05/23/2012 | CN102465340A Self-frequency-doubling laser neodymium-doped BaCaBO3F crystal |
| 05/23/2012 | CN101962801B Method for rapidly growing Nb205 crystal |
| 05/23/2012 | CN101617069B Systems and methods for processing a film, and thin films |
| 05/16/2012 | EP2453042A1 Method for the determination of impurities in silicon |
| 05/16/2012 | DE102010006724B4 Verfahren zur Herstellung eines Einkristalls aus Silizium unter Verwendung von geschmolzenem Granulat A method for producing a silicon single crystal using molten granules |
| 05/10/2012 | US20120111263 Method for the determination of impurities in silicon |
| 05/09/2012 | CN202214441U Purifying device for zone melting and purifying quartz tube for purifying device |
| 05/02/2012 | CN102433587A Preparation method of multicomponent large-size rare earth boride LaxCe1-xB6 monocrystalline block cathode material |
| 04/18/2012 | CN202193878U 硅芯炉装料快速对中装置 Silicon core furnace charging fast on the device |
| 03/29/2012 | WO2012039976A1 Technique to modify the microstructure of semiconducting materials |
| 03/28/2012 | CN202175736U 一种采用直径法控制区熔晶体自动生长系统 One kind of method with a diameter of automatic control zone melting crystal growth system |
| 03/28/2012 | CN102392294A Horizontal vacuum zone-melting preparation method of high-purity semiconductor material |
| 03/28/2012 | CN102061514B Preparation method of gas-phase heavy-doping boron zone-melting silicon single crystal |
| 03/15/2012 | DE102010040464A1 Producing a dislocation-free monocrystalline silicon rod, comprises continuously melting a polycrystalline rod, inoculating the molten material with a monocrystalline seed crystal, and recrystallizing into a single crystal rod |
| 03/14/2012 | EP2128308B1 Floating zone melting apparatus |
| 03/07/2012 | EP2426084A2 Process for production of polycrystalline silicon |
| 03/01/2012 | US20120048178 Process for production of polycrystalline silicon |
| 03/01/2012 | DE102008038810B4 Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Halbleitermaterial Method and apparatus for producing a single crystal of semiconductor material |
| 02/23/2012 | DE102009051010B4 Vorrichtung zur Herstellung eines Einkristalls aus Silizium durch Umschmelzen von Granulat An apparatus for producing a single crystal of silicon by remelting of granules |
| 02/22/2012 | CN102358954A Method for growing CaxBa1-xNb2O6 series crystals |
| 02/22/2012 | CN102358951A Thermal system and technology for producing float zone doped single crystal silicon having size phi of 6 inches |
| 02/22/2012 | CN101611177B 浮区熔化装置 Floating zone melting apparatus |
| 02/21/2012 | US8119546 Array substrate, method of manufacturing the same and method of crystallizing silicon |
| 02/16/2012 | DE102006052961B4 Verfahren zur Herstellung eines Halbleiterkristalls A process for producing a semiconductor crystal |
| 02/16/2012 | DE102005060391B4 Ein Apparat zur Herstellung eines Einkristalls und ein Verfahren zur Herstellung eines Einkristalls An apparatus for producing a single crystal and a method for producing a single crystal |
| 02/15/2012 | CN101871125B 高温稀土氧化物激光晶体及其制备方法 Rare earth oxide high-temperature laser crystal and preparation method |
| 02/14/2012 | US8114217 Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus |
| 02/08/2012 | CN101570885B 一次可同时拉制十三根硅芯或其它晶体材料的高频线圈 One can simultaneously drawn thirteen crystal silicon or other material core frequency coil |
| 01/31/2012 | US8105514 Mold for producing silica crucible |
| 01/25/2012 | CN101665982B Growth method of scorched yttrium silicate scintillation single crystal by means of floating zone |
| 01/25/2012 | CN101469940B Annular region smelting furnace |
| 01/24/2012 | US8101019 Method for producing a monocrystalline or polycrystalline semiconductor material |
| 01/24/2012 | US8100379 Mold for producing silica crucible |
| 01/18/2012 | CN102321913A Thermal system and process for controlling 8-inch zone melting silicon monocrystals |
| 01/18/2012 | CN102321911A System and method for controlling zone melting furnace for producing silicon single crystal by using abnormity polycrystalline material |
| 01/18/2012 | CN102321910A Furnace chamber auxiliary device and method for controlling deposition of controlled freeze zone (CFZ) silicon monocrystal volatile matter |
| 01/11/2012 | CN1847468B Method and apparatus for preparing major diameter single crystal |
| 01/11/2012 | CN102312293A Method for growing large size Ta2O5 single crystal by using floating zone method |
| 01/10/2012 | CA2517239C Process for reloading a single-crystal or gradient solidification metal part |
| 01/04/2012 | EP2401773A2 Laser crystallisation by irradiation |
| 01/04/2012 | CN102304757A Method for preparing 6-inch P-type solar silicon single crystals through Czochralski method and zone melting method |
| 12/21/2011 | CN102292475A 用于生产硅细棒的方法和设备 For the production of silicon slim rods of the method and apparatus |
| 12/14/2011 | CN202072793U High-frequency heating coil for zone-melting gas phase doping |
| 12/08/2011 | WO2011152854A1 Single-scan line-scan crystallization using superimposed scanning elements |
| 12/08/2011 | WO2011151757A1 Producing a mono-crystalline sheet |
| 12/07/2011 | CN102268734A 一种镨铈掺杂焦硅酸镥发光材料及其制备方法 An lutetium disilicate luminescent material and method for cerium, praseodymium-doped |
| 12/01/2011 | DE102008013325B4 Halbleiterscheibe aus einkristallinem Silicium und Verfahren zu deren Herstellung Semiconductor wafer made of monocrystalline silicon, and process for their preparation |
| 11/30/2011 | CN101580960B 一种钛镍两元合金单晶的制备方法 Preparation of a titanium-nickel alloy single crystal of two dollars |
| 11/17/2011 | DE102010021004A1 Producing monocrystalline semiconductor material useful e.g. in photovoltaics, comprises providing semiconductor material starting material, transferring it into heating zone and sinking melt into heating zone or lifting heating zone |
| 10/26/2011 | EP2379783A1 Method and device for producing thin silicon rods |
| 10/19/2011 | CN102220629A Method and system for controlling automatic growth of zone-melt crystal by adopting diameter process |
| 10/13/2011 | WO2011125897A1 Manufacturing method of metal compound crystal, ornament manufacturing method, and metal compound crystal |
| 10/13/2011 | US20110248278 Single scan irradiation for crystallization of thin films |
| 10/13/2011 | DE102010015354A1 Herstellung eines kristallinen Halbleiterwerkstoffs Preparing a crystalline semiconductor material |
| 10/12/2011 | EP2375513A2 Pulsed XeF laser heating apparatus |
| 10/11/2011 | US8035877 Laser treatment apparatus and method of manufacturing semiconductor device |
| 10/06/2011 | DE102009005837B4 Verfahren und Vorrichtung zur Herstellung von Siliziumdünnstäben Method and apparatus for production of silicon thin rods |
| 10/05/2011 | CN202000021U Clamping tool for taking monocrystals in monocrystalline silicon growing process by using zone-melting method |
| 09/29/2011 | DE102011014821A1 Producing a single crystal according to float-zoning method, comprises heating crystalline raw material rod to form floating-zone, moving the floating zone from bottom to top for the growth of a single crystal ingot below the floating zone |
| 09/28/2011 | CN101782324B Electromagnetic induction electric melting furnace for controlling average nominal diameter of TiB2(TiC) particle group in Al-Ti-B (Al-Ti-C) alloy |
| 09/28/2011 | CN101457389B High-frequency coil structure capable of simultaneous producing seven silicon cores and other crystal material |
| 09/21/2011 | EP2366814A1 High-frequency coil pulling holes arrangement for producing multiple silicon cores |
| 09/07/2011 | CN201962423U 一种硅液加热器 A silicone fluid heater |
| 09/07/2011 | CN201962410U 一种硅棒生产用石墨软毡 A silicone soft felt graphite rod production |
| 09/07/2011 | CN102177283A A graphite crucible for silicon electromagnetic induction heating and apparatus for silicon melting and refining using the graphite crucible |
| 09/07/2011 | CN102177282A A graphite crucible for electromagnetic induction melting silicon and apparatus for silicon melting and refining using the graphite crucible |
| 08/31/2011 | CN102168919A Induction cold crucible zone-refining equipment and method for preparing high-purity and hyperpure materials |
| 08/24/2011 | CN102162122A Preparation method of P-type medium-low-resistance silicon core carrier |
| 08/17/2011 | CN201933193U 一种可自由调节角度区域熔炼车 An angle can be adjusted freely zone melting car |
| 08/17/2011 | CN102154699A Method for growing sapphire monocrystal and growth equipment |
| 08/11/2011 | WO2011045186A4 Method and device for separating argon from a gaseous mixture |
| 08/10/2011 | EP2354278A1 Method for producing a single crystal composed of silicon using molten granules |
| 08/04/2011 | US20110185963 Method For Producing A Single Crystal Composed Of Silicon Using Molten Granules |
| 08/04/2011 | DE102010006724A1 Verfahren zur Herstellung eines Einkristalls aus Silizium unter Verwendung von geschmolzenem Granulat A method for producing a silicon single crystal using molten granules |
| 08/03/2011 | CN201915043U 炭素材料发热体 Heating element carbon materials |
| 08/03/2011 | CN102140674A Method for producing single crystal composed of silicon using molten granule |
| 07/27/2011 | CN101532170B Seed holder capable of adjusting number of holders |
| 07/27/2011 | CN101457395B High-frequency coil structure capable of simultaneous producing three silicon cores and other crystal material |
| 07/21/2011 | WO2011086851A1 Device for single-crystal growth and method of single-crystal growth |
| 07/13/2011 | CN201896205U Device used for realizing laser suspension zone-melting directional solidification |
| 07/13/2011 | CN101979719B Method for producing gas phase heavy phosphorus-doped float zone silicon single crystal |
| 07/13/2011 | CN101974779B Method for preparing (110) float zone silicon crystal |
| 07/07/2011 | US20110163077 Laser thin film poly-silicon annealing optical system |
| 07/06/2011 | CN102119242A Melt purification and delivery system |
| 06/29/2011 | CN102108554A Method for preparing high-performance p-type bismuth telluride-based thermoelectric materials |
| 06/29/2011 | CN101570884B High-frequency coil capable of drawing 16 silicon cores or other crystal materials simultaneously |
| 06/29/2011 | CN101570883B High-frequency coil structure capable of drawing 19 silicon cores or other crystal materials simultaneously |
| 06/29/2011 | CN101487137B High-frequency coil structure capable of producing four silicon cores and other crystal material at the same time |
| 06/29/2011 | CN101457394B High-frequency coil structure capable of simultaneous producing two silicon cores and other crystal material |
| 06/29/2011 | CN101457390B High-frequency coil structure capable of simultaneous producing eight silicon cores and other crystal material |
| 06/29/2011 | CN101457388B High-frequency coil structure capable of simultaneous producing two silicon cores and other crystal material |
| 06/22/2011 | EP2334850A1 A graphite crucible for electromagnetic induction melting silicon and apparatus for silicon melting and refining using the graphite crucible |