| Patents for C30B 13 - Single-crystal growth by zone-melting; Refining by zone-melting (2,141) |
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| 06/21/1977 | US4030963 Arc-melting preparation of single crystal LaB6 cathodes |
| 06/14/1977 | US4030116 High aspect ratio P-N junctions by the thermal gradient zone melting technique |
| 05/31/1977 | US4027053 Method of producing polycrystalline silicon ribbon |
| 05/03/1977 | US4021269 Semiconductors |
| 04/19/1977 | US4018566 Light responsive measuring device for heater control |
| 03/22/1977 | US4013421 Apparatus for growing single crystals of high-melting oxides |
| 03/15/1977 | US4012242 Liquid epitaxy technique |
| 03/15/1977 | US4012236 Uniform thermal migration utilizing noncentro-symmetric and secondary sample rotation |
| 03/15/1977 | US4012213 Apparatus for forming refractory fibers |
| 03/08/1977 | US4011582 Deep power diode |
| 03/08/1977 | US4010534 Process for making a deep diode atomic battery |
| 02/01/1977 | US4006040 Semiconductor device manufacture |
| 01/18/1977 | US4003741 Method of preparation of semiconducting compounds |
| 01/04/1977 | US4001047 Temperature gradient zone melting utilizing infrared radiation |
| 12/28/1976 | US3999950 Semiconductor crystals |
| 12/21/1976 | US3998662 Molten metal |
| 12/21/1976 | US3998661 Uniform migration of an annular shaped molten zone through a solid body |
| 12/07/1976 | US3996096 Method for crucible-free zone melting of semiconductor crystal rods |
| 12/07/1976 | US3996094 Monocrystalline web-formed semiconductor |
| 12/07/1976 | US3996011 Apparatus for crucible-free zone melting of semiconductor crystal rods |
| 11/30/1976 | US3994690 Universal apparatus for elaborating semiconductive monocrystals |
| 11/02/1976 | US3990093 Deep buried layers for semiconductor devices |
| 11/02/1976 | US3989468 Apparatus for crucible-free zone melting of semiconductor crystal rods |
| 10/26/1976 | US3988197 Crucible-free zone melting of semiconductor crystal rods including oscillation dampening |
| 10/12/1976 | US3985947 Device and method for crucible-free zone melting of crystallizable rods in particular semiconductor rods |
| 09/14/1976 | US3979820 Deep diode lead throughs |
| 08/24/1976 | US3976536 Method for producing a controlled radial path of resistance in a semiconductor monocrystalline rod |
| 08/03/1976 | US3972742 Deep power diode |
| 08/03/1976 | US3972684 Apparatus for fabricating monocrystals |
| 06/29/1976 | US3966416 Single crystal growth apparatus with fluid bearing and fluid drive means |
| 06/08/1976 | US3961906 Apparatus for crucible-free zone melting of semiconductor crystal rods including oscillation dampening material |
| 06/01/1976 | US3960511 Electrodes |
| 05/04/1976 | US3954416 Apparatus for positively doping semiconductor crystals during zone melting |
| 03/16/1976 | US3944640 Method for forming refractory fibers by laser energy |
| 03/09/1976 | US3943324 Apparatus for forming refractory tubing |
| 02/17/1976 | US3939252 From gadolinium oxide, molybdenum trioxide and lithium molybdate |
| 02/17/1976 | US3939035 Method of producing monocrystalline semiconductor material, particularly silicon, with adjustable dislocation density |
| 02/03/1976 | US3936346 Crystal growth combining float zone technique with the water cooled RF container method |
| 01/27/1976 | US3935059 Method of producing single crystals of semiconductor material by floating-zone melting |
| 01/27/1976 | US3935058 Zone melting process |
| 01/20/1976 | US3933572 Column of crystal feed |