Patents for C30B 13 - Single-crystal growth by zone-melting; Refining by zone-melting (2,141)
06/2004
06/09/2004EP1426458A1 Method of locally depositing a MCrAlY coating
06/09/2004CN1502556A High purity silicon and productive method thereof
06/03/2004US20040106244 Method of crystallizing amorphous silicon and device fabricated using the same
05/2004
05/27/2004US20040099209 Laser annealing apparatus
05/13/2004WO2002031232A9 Method and device for producing optical fluoride crystals
05/12/2004CN1495848A Method for mfg. crystal semiconductor material and method for mfg. semiconductor
04/2004
04/22/2004US20040076894 Exposing the silicon layer to a laser beam through a mask having a phase shift layer; stripes having a first width separated by slits, and an overlapping blocking layer having stripes having a narrower width and parallel to the first
04/08/2004WO2004029339A1 Terbium paramagnetic garnet single crystal and magneto-optical device
04/07/2004CN1487577A Crystallized state in site monitoring method
04/06/2004US6716283 Optical processing apparatus and optical processing method
04/01/2004US20040060506 Excimer laser crystallization of amorphous silicon film
04/01/2004US20040060504 Semiconductor thin film and process for production thereof
04/01/2004US20040060388 Method of producing hydorgen storage alloy
03/2004
03/30/2004US6712902 Feed rod for growing magnetic single crystal, magnetic single crystal, and method of producing a magnetic single crystal
03/18/2004WO2004023538A1 Crystal growing method, crystal growing apparatus, beam splitter, and display
03/18/2004US20040053450 Method and system for providing a single-scan, continous motion sequential lateral solidification
03/18/2004DE19610650B4 Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterialstäben Apparatus for floating zone melting semiconductor material rods
03/18/2004DE10339237A1 Verfahren zur In-Situ-Überwachung des Kristallisationszustands A method for in-situ monitoring of the crystallization state
03/17/2004EP1397835A2 Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure
03/11/2004WO2004012257A9 Method and apparatus for manufacturing net shape semiconductor wafers
03/11/2004US20040048453 Method for polysilicon crystallization by simultaneous laser and rapid thermal annealing
03/11/2004US20040048426 Integrated circuit including single crystal semiconductor layer on non-crystalline layer
03/11/2004US20040048088 Process for producing heat-resistant intermetallic compound Ni3Al foil having room-temperature ductility and heat-resistant intermetallic compound Ni3Al foil having room-temperature ductility
02/2004
02/26/2004WO2004016837A1 Crystal production method for gallium oxide-iron mixed crystal
02/26/2004US20040035357 Method for manufacturing terbium aluminum-based paramagnetic garnet single crystal
02/25/2004EP1391544A2 Method for manufacturing terbium aluminium-based paramagnetic garnet single crystal
02/25/2004CN1139678C Single crystal growth method
02/18/2004CN1476059A Crystallizing device, optical device for crystallizing device, crystallizing method, film transistor and display
02/05/2004WO2004012257A1 Method and apparatus for manufacturing net shape semiconductor wafers
01/2004
01/08/2004US20040005744 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, thin film transistor, and display
01/07/2004CN1465755A Method for crystallizing amorphous silicon using nanoparticles
12/2003
12/31/2003CN1465107A Method for producing high-temperature superconductors
12/17/2003CN1131546C Method of forming crystalline film
12/16/2003US6663711 Growth in solution in a float zone of crystals of a compound or an alloy
12/11/2003US20030226820 Method of crystallizing amorphous silicon using nanoparticles
12/10/2003EP1369507A1 Method of crystallizing amorphous silicon using nanoparticles
12/10/2003CN1461045A Method and device for semiconductor crystallization by laser beam
12/02/2003US6656270 Excimer laser crystallization of amorphous silicon film
11/2003
11/20/2003US20030216012 Method and apparatus for crystallizing semiconductor with laser beams
11/20/2003US20030213427 Method of welding single crystals
11/13/2003WO2003093540A1 Device for the production of crystal rods having a defined cross-section and column-shaped polycrystalline structure by means of floating-zone continuous crystallization
11/13/2003WO2003072284A3 Method of removing casting defects
11/12/2003CN1455029A Combined gas-phase pre-doping and neutron irradiation doping area fused silicon monocrystal production method
11/12/2003CN1455028A Gas-phase doping-area fused silicon monocrystal production method
10/2003
10/23/2003WO2003087439A1 Method for producing for producing mono-crystalline structures
10/23/2003US20030199177 Semiconductor crystal-structure-processed mechanical devices, and methods and systems for making
10/23/2003US20030196593 Thin-film crystal-structure-processed mechanical devices, and methods and systems for making
10/23/2003US20030196591 Formation of crystal-structure-processed mechanical, and combined mechanical and electrical, devices on low-temperature substrates
10/23/2003US20030196589 Laser annealing mask and method for smoothing an annealed surface
10/22/2003EP1354341A1 Method for single-scan, continuous motion sequential lateral solidification
10/16/2003WO2003005443A3 Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure
10/16/2003US20030194613 Projecting a laser beam through a mask having a slit pattern comprising a corner region with edges, and a blocking feature with the corner region to reduce energy spikes projected on a substrate.
10/16/2003US20030192470 Doped semiconductor wafer of float zone pulled semiconductor material, and process for producing the semiconductor wafer
10/02/2003US20030183162 Polycrystalline silicon rod and method of processing the same
10/01/2003EP1348781A1 Methode de croissance épitaxiale par irradiation avec un faisceau d'énergie
09/2003
09/25/2003US20030177975 Rare earth-iron garnet single crystal material and method for preparation thereof and device using rare earth-iron garnet single crystal material
09/18/2003US20030175531 Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure
09/17/2003CN1443364A Method and system for providing single-scan, continuous motion sequential lateral solidification
09/16/2003US6620710 Forming a single crystal semiconductor film on a non-crystalline surface
09/10/2003CN1441463A Forming method for semiconductor thin film and forming device for semiconductor thin film
09/10/2003CN1440848A Prepn process of TbDyFe-base directionally solidified alloy crystal
09/04/2003WO2003072284A2 Method of removing casting defects
09/04/2003US20030166309 Pulse width method for controlling lateral growth in crystallized silicon films
09/03/2003EP1340567A1 Method of removing casting defects
08/2003
08/28/2003US20030162332 Method and apparatus for forming a semiconductor thin film
08/27/2003EP1337696A1 Method and device for producing optical fluoride crystals
08/27/2003CN1119281C Method of making silicon for solar cell
08/07/2003US20030145781 Process and apparatus for producing a single crystal of semiconductor material
07/2003
07/31/2003US20030142722 Method and apparatus for measuring temperature
07/30/2003CN1433488A Polycrystalline silicon rod and method for processing the same
07/24/2003US20030136480 Process for producing heat-resistant intermetallic compound Ni3Al foil having room-temperature ductility and heat-resistant intermetallic compound Ni3Al foil having room-temperature ductility
07/22/2003US6596076 Apparatus and method for altering the apparent effects of gravity
07/17/2003WO2002101844A3 Method for producing high-temperature superconductors
07/15/2003US6593215 Method of manufacturing crystalline semiconductor material and method of manufacturing semiconductor device
07/08/2003US6589449 Strontium, ruthenium oxide
07/08/2003US6589364 Producing high quality crystal lattice uniformly incorpor-ating germanium and dopant within its structure; hetero-junction bipolar transistor
07/03/2003US20030124755 Method of producing electrooptical device and method of producing driving substrate for driving electrooptical device
07/01/2003US6586093 Nanostructures, their applications and method for making them
06/2003
06/25/2003EP1320637A2 Forming a single crystal semiconductor film on a non-crystalline surface
06/25/2003CN1426086A High energy body supply device, crystal film forming method and method for producing thin film electronic device
06/25/2003CN1425808A Remote control crystal growing device and its control method
06/12/2003US20030109148 Technique for growing single crystal material on top of an insulator
06/12/2003US20030107043 High-melting-point oxide light source, conductive paste and exhaust gas filter
05/2003
05/28/2003CN1109777C Method for zone-melting growing crystal of shaped heating piece
05/20/2003US6566218 Boride-based substrate for growing semiconducting layers thereon and a semiconductor device using the same
05/13/2003US6562126 Method and device for producing optical fluoride crystals
05/06/2003US6558991 Laser irradiation apparatus and laser irradiation method
05/01/2003WO2003035946A1 Method of growing a mcraly-coating and an article coated with the mcraly-coating
05/01/2003US20030079677 Method for fabricating a semiconductor epitaxial wafer having doped carbon and a semiconductor epitaxial wafer
04/2003
04/29/2003US6554895 Crystallogenesis method with magnetic field
04/16/2003EP1302760A1 Method and apparatus for measuring temperature
04/09/2003CN1409378A Method for producing polycrystal silicon film
04/03/2003WO2003027361A1 Mcraly-coating
04/03/2003US20030064571 Process for producing polysilicon film
04/03/2003US20030061984 Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof
03/2003
03/26/2003EP1295970A1 MCrAlY type alloy coating
03/26/2003EP1295969A1 Method of growing a MCrAIY-coating and an article coated with the MCrAIY-coating
03/18/2003US6534207 Irradiating pulsed light to an amorphous base material such as glass to form the crystalline region having a nonlinear characteristic in an irradiated portion of the amorphous material
03/12/2003EP1291456A1 Polycrystalline silicon rod and method for processing the same
03/06/2003WO2003018882A1 Improved polycrystalline tft uniformity through microstructure mis-alignment
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