Patents for C30B 13 - Single-crystal growth by zone-melting; Refining by zone-melting (2,141) |
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01/06/1988 | CN86101506A Method for growing of colour crystal |
01/05/1988 | US4717436 Wire for bonding a semiconductor device |
11/25/1987 | EP0246940A1 Process and apparatus for continuously controlling the undercooling of the solidification front of a single crystal during its development, and use in its growth control |
11/24/1987 | US4708764 Two-dimensional mixing |
11/19/1987 | DE3616595A1 HF heating circuit for zone refining of semiconductors |
11/17/1987 | US4707217 Single crystal thin films |
10/29/1987 | DE3613949A1 Device for producing monocrystalline semiconductor material |
10/27/1987 | CA1228525A1 Method for growing gaas single crystal by a floating zone technique |
10/12/1987 | EP0128159A4 Apparatus and method for thermally treating a semiconductor substrate. |
10/07/1987 | EP0239794A1 Process for making silicium crystals for photovoltaic applications |
09/29/1987 | US4696716 Apparatus for doping semiconductor rods with solid dopants |
09/23/1987 | EP0238142A2 Solid state laser hosts |
09/23/1987 | EP0156812B1 Fabrication of single crystal fibers from congruently melting polycrystalline fibers |
09/15/1987 | US4694143 Zone melting apparatus for monocrystallizing semiconductor layer on insulator layer |
09/02/1987 | EP0234984A1 Process for making a crystalline Hg1-xo Cdxo Te ingot |
09/01/1987 | US4690797 Method for the manufacture of large area silicon crystal bodies for solar cells |
09/01/1987 | US4690725 Purification of Cd and Te by zone refining |
08/20/1987 | DE3604537A1 Method and device for measuring the dopant concentration in the melting zone of indium-doped silicon rods during crucible-less drawing of zones |
07/16/1987 | DE3600531A1 Device for producing single-crystal semiconductor material |
07/15/1987 | EP0228517A2 Apparatus for drawing and forming single crystals |
07/07/1987 | US4678538 Process for the production of an insulating support on an oriented monocrystalline silicon film with localized defects |
07/02/1987 | WO1987003916A1 Method of forming single crystal silicon using spe seed and laser crystallization |
07/01/1987 | EP0227499A1 Mixed lanthanum-magnesium aluminates, process for their production and lasers using these aluminates |
06/30/1987 | US4676827 Oxygen free copper ally; prevention of damage to bonding pad |
06/09/1987 | US4672169 Apparatus and method for heating materials with a laser heat source |
06/02/1987 | US4670088 Lateral epitaxial growth by seeded solidification |
06/02/1987 | US4670086 Process for the growth of structures based on group IV semiconductor materials |
05/26/1987 | US4668331 Heat treatment |
05/13/1987 | EP0221468A2 Method of forming magnetostrictive rods from rare earth-iron alloys |
05/12/1987 | US4664744 Process for the production of bismuth germanate monocrystals with a high scintillation response |
05/12/1987 | CA1221606A1 Method of producing single-crystal silicon film |
05/05/1987 | US4662980 Process for preparing crystals of Hg1-x Cdx Te |
04/22/1987 | CN86106896A Preparation of aluminate doped with la, mg, and laser using it |
04/21/1987 | US4659422 Process for producing monocrystalline layer on insulator |
04/08/1987 | EP0217705A1 Resistor for testing materials |
03/31/1987 | US4654196 Process for producing a polycrystalline alloy |
03/18/1987 | EP0214350A1 Method for preparing a polycrystalline alloy for making single crystals by a travelling solvent zone |
03/04/1987 | EP0211933A1 Ribbon-to-ribbon conversion system method and apparatus |
01/28/1987 | EP0209629A1 Process for preparing a solvent zone in making semiconductor compounds |
01/28/1987 | EP0105347B1 Temperature gradient zone melting process and apparatus |
01/27/1987 | CA1217117A1 Process for producing ternary or quaternary semiconductor compounds |
01/08/1987 | DE3615836A1 Method for inductive heating of materials in the form of wafers |
01/06/1987 | US4634492 Chrysoberyl single crystal and method of producing the same |
12/30/1986 | US4632723 Etching coatings, recrystallization |
11/26/1986 | EP0202977A1 Process for producing on an insulator substrate an oriented single silicon crystal film with localized faults |
11/18/1986 | US4623423 Annealing in zero temperature gradient |
11/04/1986 | US4620587 Process for the treatment of a liquid mass |
10/29/1986 | EP0199638A1 Process for producing on an insulator substrate an oriented single silicon crystal film with localized faults |
10/29/1986 | EP0198852A1 Method for improving crystallinity of semiconductor ribbon |
10/28/1986 | US4619811 Apparatus for growing GaAs single crystal by using floating zone |
10/22/1986 | EP0032920B1 Photo-induced temperature gradient zone melting |
10/07/1986 | US4615760 Suppression or control of liquid convection in float zones in a zero-gravity environment by viscous gas shear |
09/02/1986 | US4609402 Melts, hollow tube molds, inert gas |
08/26/1986 | US4608234 Reduction of bending or buckling of flat resistors |
08/19/1986 | US4606846 Mixed rare earth metal, divalent transition metal, aluminum oxide |
08/14/1986 | WO1986004619A1 Ribbon-to-ribbon conversion system method and apparatus |
07/29/1986 | US4602980 Method for improving crystallinity of semiconductor ribbon |
07/08/1986 | US4599245 Method for making large-surface silicon crystal bodies |
07/08/1986 | US4599244 Method large-area silicon bodies |
07/08/1986 | US4599133 Conductors having high density integration |
06/03/1986 | US4592924 Method of manufacturing a reaction vessel for crystal growth purposes |
06/03/1986 | US4592799 Method of recrystallizing a polycrystalline, amorphous or small grain material |
05/20/1986 | US4590024 Silicon deposition process |
05/06/1986 | CA1204044A1 Growth of structures based on group iv semiconductor materials |
04/30/1986 | EP0179491A2 Formation of single-crystal silicon layer by recrystallization |
04/29/1986 | US4585512 Method for making seed crystals for single-crystal semiconductor devices |
04/23/1986 | EP0178987A1 Process for producing a crystal with at least a ternary composition by a travelling solvent zone |
04/10/1986 | WO1986002111A1 Method for improving crystallinity of semiconductor ribbon |
04/08/1986 | US4581520 Heat treatment machine for semiconductors |
04/01/1986 | US4579719 Apparatus for crucible-free floating-zone melting a semiconductor rod, particularly of silicon |
03/25/1986 | US4578145 Method of making monocrystalline ternary semiconductor compounds |
03/25/1986 | US4578144 Method for forming a single crystal silicon layer |
03/25/1986 | US4578143 Method for forming a single crystal silicon layer |
03/18/1986 | US4576676 Zone melting recrystallization, crystal orientation |
03/12/1986 | EP0174004A2 Process for making a crystalline article from a melt |
03/12/1986 | EP0174003A2 Holder for ingot and crucible |
03/05/1986 | EP0173465A2 Glow discharge electron beam method and apparatus for the surface recrystallization of solid substances |
01/21/1986 | US4565599 Graphoepitaxy by encapsulation |
01/14/1986 | US4564415 Process for producing ternary or quaternary semiconductor compounds |
01/14/1986 | US4564403 Single-crystal semiconductor devices and method for making them |
01/03/1986 | WO1986000096A1 Method and apparatus for reducing temperature variations across a semiconductor wafer during heating |
12/31/1985 | US4562106 Product made by method of entraining dislocations and other crystalline defects |
12/24/1985 | US4560420 Reflecting and absorbing radiant energy |
12/17/1985 | US4559102 Method for recrystallizing a polycrystalline, amorphous or small grain material |
12/03/1985 | US4556448 Method for controlled doping of silicon crystals by improved float zone technique |
11/26/1985 | US4555301 Formation of heterostructures by pulsed melting of precursor material |
10/29/1985 | US4549913 Wafer construction for making single-crystal semiconductor device |
10/29/1985 | US4549912 Anode and cathode connections for the practice of electromigration |
10/15/1985 | US4547256 Isothermal heating and cooling to avoid defects |
10/15/1985 | US4546811 Process for the treatment of a liquid mass |
10/09/1985 | EP0156812A1 Fabrication of single crystal fibers from congruently melting polycrystalline fibers. |
10/01/1985 | US4544540 Diamond single crystals, a process of manufacturing and tools for using same |
09/26/1985 | EP0087426A4 Lateral epitaxial growth by seeded solidification. |
08/27/1985 | US4538279 Pancake induction heating coil |
08/27/1985 | US4537653 Synthesis of beryl crystals |
08/20/1985 | US4536251 Method for eliminating laser-induced substrate fissures associated with crystallized silicon areas |
07/30/1985 | US4532000 Creating melt zone near end of polycrystalline fiber, causing zone to travel length of fiber so it continuously melts and recrystallizes into single crystal |
07/24/1985 | EP0148946A1 Method of producing a chrysoberyl single crystal |
06/18/1985 | US4523962 Method for fabricating monocrystalline semiconductor layer on insulating layer by laser crystallization using a grid of anti-reflection coating disposed on poly/amorphous semiconductor |
06/11/1985 | US4523067 Temperature gradient zone melting apparatus |