Patents for C30B 13 - Single-crystal growth by zone-melting; Refining by zone-melting (2,141)
01/1988
01/06/1988CN86101506A Method for growing of colour crystal
01/05/1988US4717436 Wire for bonding a semiconductor device
11/1987
11/25/1987EP0246940A1 Process and apparatus for continuously controlling the undercooling of the solidification front of a single crystal during its development, and use in its growth control
11/24/1987US4708764 Two-dimensional mixing
11/19/1987DE3616595A1 HF heating circuit for zone refining of semiconductors
11/17/1987US4707217 Single crystal thin films
10/1987
10/29/1987DE3613949A1 Device for producing monocrystalline semiconductor material
10/27/1987CA1228525A1 Method for growing gaas single crystal by a floating zone technique
10/12/1987EP0128159A4 Apparatus and method for thermally treating a semiconductor substrate.
10/07/1987EP0239794A1 Process for making silicium crystals for photovoltaic applications
09/1987
09/29/1987US4696716 Apparatus for doping semiconductor rods with solid dopants
09/23/1987EP0238142A2 Solid state laser hosts
09/23/1987EP0156812B1 Fabrication of single crystal fibers from congruently melting polycrystalline fibers
09/15/1987US4694143 Zone melting apparatus for monocrystallizing semiconductor layer on insulator layer
09/02/1987EP0234984A1 Process for making a crystalline Hg1-xo Cdxo Te ingot
09/01/1987US4690797 Method for the manufacture of large area silicon crystal bodies for solar cells
09/01/1987US4690725 Purification of Cd and Te by zone refining
08/1987
08/20/1987DE3604537A1 Method and device for measuring the dopant concentration in the melting zone of indium-doped silicon rods during crucible-less drawing of zones
07/1987
07/16/1987DE3600531A1 Device for producing single-crystal semiconductor material
07/15/1987EP0228517A2 Apparatus for drawing and forming single crystals
07/07/1987US4678538 Process for the production of an insulating support on an oriented monocrystalline silicon film with localized defects
07/02/1987WO1987003916A1 Method of forming single crystal silicon using spe seed and laser crystallization
07/01/1987EP0227499A1 Mixed lanthanum-magnesium aluminates, process for their production and lasers using these aluminates
06/1987
06/30/1987US4676827 Oxygen free copper ally; prevention of damage to bonding pad
06/09/1987US4672169 Apparatus and method for heating materials with a laser heat source
06/02/1987US4670088 Lateral epitaxial growth by seeded solidification
06/02/1987US4670086 Process for the growth of structures based on group IV semiconductor materials
05/1987
05/26/1987US4668331 Heat treatment
05/13/1987EP0221468A2 Method of forming magnetostrictive rods from rare earth-iron alloys
05/12/1987US4664744 Process for the production of bismuth germanate monocrystals with a high scintillation response
05/12/1987CA1221606A1 Method of producing single-crystal silicon film
05/05/1987US4662980 Process for preparing crystals of Hg1-x Cdx Te
04/1987
04/22/1987CN86106896A Preparation of aluminate doped with la, mg, and laser using it
04/21/1987US4659422 Process for producing monocrystalline layer on insulator
04/08/1987EP0217705A1 Resistor for testing materials
03/1987
03/31/1987US4654196 Process for producing a polycrystalline alloy
03/18/1987EP0214350A1 Method for preparing a polycrystalline alloy for making single crystals by a travelling solvent zone
03/04/1987EP0211933A1 Ribbon-to-ribbon conversion system method and apparatus
01/1987
01/28/1987EP0209629A1 Process for preparing a solvent zone in making semiconductor compounds
01/28/1987EP0105347B1 Temperature gradient zone melting process and apparatus
01/27/1987CA1217117A1 Process for producing ternary or quaternary semiconductor compounds
01/08/1987DE3615836A1 Method for inductive heating of materials in the form of wafers
01/06/1987US4634492 Chrysoberyl single crystal and method of producing the same
12/1986
12/30/1986US4632723 Etching coatings, recrystallization
11/1986
11/26/1986EP0202977A1 Process for producing on an insulator substrate an oriented single silicon crystal film with localized faults
11/18/1986US4623423 Annealing in zero temperature gradient
11/04/1986US4620587 Process for the treatment of a liquid mass
10/1986
10/29/1986EP0199638A1 Process for producing on an insulator substrate an oriented single silicon crystal film with localized faults
10/29/1986EP0198852A1 Method for improving crystallinity of semiconductor ribbon
10/28/1986US4619811 Apparatus for growing GaAs single crystal by using floating zone
10/22/1986EP0032920B1 Photo-induced temperature gradient zone melting
10/07/1986US4615760 Suppression or control of liquid convection in float zones in a zero-gravity environment by viscous gas shear
09/1986
09/02/1986US4609402 Melts, hollow tube molds, inert gas
08/1986
08/26/1986US4608234 Reduction of bending or buckling of flat resistors
08/19/1986US4606846 Mixed rare earth metal, divalent transition metal, aluminum oxide
08/14/1986WO1986004619A1 Ribbon-to-ribbon conversion system method and apparatus
07/1986
07/29/1986US4602980 Method for improving crystallinity of semiconductor ribbon
07/08/1986US4599245 Method for making large-surface silicon crystal bodies
07/08/1986US4599244 Method large-area silicon bodies
07/08/1986US4599133 Conductors having high density integration
06/1986
06/03/1986US4592924 Method of manufacturing a reaction vessel for crystal growth purposes
06/03/1986US4592799 Method of recrystallizing a polycrystalline, amorphous or small grain material
05/1986
05/20/1986US4590024 Silicon deposition process
05/06/1986CA1204044A1 Growth of structures based on group iv semiconductor materials
04/1986
04/30/1986EP0179491A2 Formation of single-crystal silicon layer by recrystallization
04/29/1986US4585512 Method for making seed crystals for single-crystal semiconductor devices
04/23/1986EP0178987A1 Process for producing a crystal with at least a ternary composition by a travelling solvent zone
04/10/1986WO1986002111A1 Method for improving crystallinity of semiconductor ribbon
04/08/1986US4581520 Heat treatment machine for semiconductors
04/01/1986US4579719 Apparatus for crucible-free floating-zone melting a semiconductor rod, particularly of silicon
03/1986
03/25/1986US4578145 Method of making monocrystalline ternary semiconductor compounds
03/25/1986US4578144 Method for forming a single crystal silicon layer
03/25/1986US4578143 Method for forming a single crystal silicon layer
03/18/1986US4576676 Zone melting recrystallization, crystal orientation
03/12/1986EP0174004A2 Process for making a crystalline article from a melt
03/12/1986EP0174003A2 Holder for ingot and crucible
03/05/1986EP0173465A2 Glow discharge electron beam method and apparatus for the surface recrystallization of solid substances
01/1986
01/21/1986US4565599 Graphoepitaxy by encapsulation
01/14/1986US4564415 Process for producing ternary or quaternary semiconductor compounds
01/14/1986US4564403 Single-crystal semiconductor devices and method for making them
01/03/1986WO1986000096A1 Method and apparatus for reducing temperature variations across a semiconductor wafer during heating
12/1985
12/31/1985US4562106 Product made by method of entraining dislocations and other crystalline defects
12/24/1985US4560420 Reflecting and absorbing radiant energy
12/17/1985US4559102 Method for recrystallizing a polycrystalline, amorphous or small grain material
12/03/1985US4556448 Method for controlled doping of silicon crystals by improved float zone technique
11/1985
11/26/1985US4555301 Formation of heterostructures by pulsed melting of precursor material
10/1985
10/29/1985US4549913 Wafer construction for making single-crystal semiconductor device
10/29/1985US4549912 Anode and cathode connections for the practice of electromigration
10/15/1985US4547256 Isothermal heating and cooling to avoid defects
10/15/1985US4546811 Process for the treatment of a liquid mass
10/09/1985EP0156812A1 Fabrication of single crystal fibers from congruently melting polycrystalline fibers.
10/01/1985US4544540 Diamond single crystals, a process of manufacturing and tools for using same
09/1985
09/26/1985EP0087426A4 Lateral epitaxial growth by seeded solidification.
08/1985
08/27/1985US4538279 Pancake induction heating coil
08/27/1985US4537653 Synthesis of beryl crystals
08/20/1985US4536251 Method for eliminating laser-induced substrate fissures associated with crystallized silicon areas
07/1985
07/30/1985US4532000 Creating melt zone near end of polycrystalline fiber, causing zone to travel length of fiber so it continuously melts and recrystallizes into single crystal
07/24/1985EP0148946A1 Method of producing a chrysoberyl single crystal
06/1985
06/18/1985US4523962 Method for fabricating monocrystalline semiconductor layer on insulating layer by laser crystallization using a grid of anti-reflection coating disposed on poly/amorphous semiconductor
06/11/1985US4523067 Temperature gradient zone melting apparatus
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