| Patents for C30B 13 - Single-crystal growth by zone-melting; Refining by zone-melting (2,141) |
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| 03/06/2003 | US20030041797 Comprises yttrium/iron oxide; for use in miniaturization of high-frequency devices such as isolators, circulators, and magnetostatic wave devices |
| 02/25/2003 | CA2256699C Crystallization processing of semiconductor film regions on a substrate, and devices made therewith |
| 02/12/2003 | CN1396428A Directional and regionally setting graphite heater |
| 02/06/2003 | US20030024469 Silicon single crystal produced by crucible-free float zone pulling |
| 02/06/2003 | US20030024468 Method and device for the production of a single crystal |
| 02/04/2003 | US6514339 Laser annealing apparatus |
| 01/30/2003 | US20030021307 Laser treatment apparatus and method of manufacturing semiconductor device |
| 01/16/2003 | WO2003005443A2 Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure |
| 01/16/2003 | US20030013280 Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device |
| 01/15/2003 | CN1390986A Crystal film and its preparartion, and element, circuit and device therewith |
| 01/08/2003 | CN1389433A Single-crystal ceramic powder preparation method, single-crystal ceramic powder omd its composite material and electronic component |
| 01/07/2003 | US6503563 Method of producing polycrystalline silicon for semiconductors from saline gas |
| 01/03/2003 | WO2002022919A3 Forming a single crystal semiconductor film on a non-crystalline surface |
| 01/02/2003 | US20030003766 Crystalline thin film and process for production thereof, element employing crystalline thin film, circuit employing element, and device employing element or circuit |
| 01/02/2003 | US20030003242 Pulse width method for controlling lateral growth in crystallized silicon films |
| 01/02/2003 | US20030000454 Passivation of HgCdTe junction diode by annealing in Cd/Hg atmosphere |
| 01/01/2003 | CN1388565A Non-crystalline silicon deposition for continuous horizontol solidification |
| 01/01/2003 | CN1388564A Method for making amorphous silicon crystalize using mask |
| 12/26/2002 | US20020197461 Method for manufacturing single crystal ceramic powder, and single crystal ceramic powder, composite material, and electronic element |
| 12/19/2002 | WO2002101844A2 Method for producing high-temperature superconductors |
| 12/18/2002 | EP1266982A2 Method for production of zinc oxide single crystal |
| 12/12/2002 | US20020185059 Laser annealing apparatus |
| 12/12/2002 | US20020185055 Method for production of zinc oxide single crystal |
| 12/10/2002 | US6492190 Method of producing electrooptical device and method of producing driving substrate for driving electrooptical device |
| 12/05/2002 | US20020182341 Amorphous silicon deposition for sequential lateral solidification |
| 12/05/2002 | US20020179001 Method of crystallizing amorphous silicon using a mask |
| 12/04/2002 | EP1262578A1 Crystalline thin film and process for production thereof, element employing crystalline thin film, circuit employing element, and device employing element or circuit |
| 12/04/2002 | EP1262450A1 Method for manufacturing single crystal ceramic powder, and single crystal ceramic powder, composite material, and electronic element |
| 12/04/2002 | EP1226285A4 Single crystal tungsten alloy penetrator and method of making |
| 12/04/2002 | CN1095505C Vertical pulling and zone melting process of producing monmocrystalline silicon |
| 11/30/2002 | CA2387677A1 Method for manufacturing single crystal ceramic powder, and single crystal ceramic powder, composite material, and electronic element |
| 11/05/2002 | US6475886 Fabrication method of nanocrystals using a focused-ion beam |
| 10/31/2002 | WO2002086954A1 Method and system for providing a single-scan, continuous motion sequential lateral solidification |
| 10/31/2002 | CA2412603A1 Method and system for providing a single-scan, continuous motion sequential lateral solidification |
| 10/30/2002 | CN2518873Y Double-crucible zone-melting continuous leak-injection device |
| 09/25/2002 | EP1242304A1 Nanostructures, their applications and method for making them |
| 09/17/2002 | US6451108 Method for manufacturing dislocation-free silicon single crystal |
| 09/12/2002 | US20020124791 Silicon wafer and method for producing the same |
| 09/03/2002 | US6444061 Process for producing heat-resistant intermetallic compound ni3al foil having room-temperature ductility and heat-resistant intermetallic compound ni3al foil having room-temperature ductility |
| 09/03/2002 | US6444028 Charging material and holding system for the charging material |
| 08/28/2002 | EP1234899A2 A single crystal and method of manufacturing same |
| 08/22/2002 | US20020112659 Single crystal and method of manufacturing same |
| 08/20/2002 | US6436208 Process for preparing aligned in-situ two phase single crystal composites of titanium-niobium alloys |
| 08/01/2002 | DE10103670A1 Erzeugung kristalliner Si-Schichten mit (100)-Textur durch Laserbeschuß amorpher Si-Schichten auf einem Substrat Generating crystalline Si layers with (100) texture by laser bombardment amorphous Si layers on a substrate |
| 07/31/2002 | EP1226285A1 Single crystal tungsten alloy penetrator and method of making |
| 07/25/2002 | US20020098695 Method of manufaturing crystalline semiconductor material and method of manufaturing semiconductor device |
| 07/25/2002 | DE10128320C1 High temperature superconductor manufacturing method has material converted into superconductive layer applied to metal band and doped to provide non-uniform melting points |
| 06/27/2002 | US20020081848 Fabrication method of nanocrystals using a focused-ion beam |
| 06/18/2002 | US6405435 Process for producing or repairing cooling channels in monocrystalline components of gas turbines |
| 06/13/2002 | WO2002047137A1 Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device |
| 06/06/2002 | US20020066402 Method and device for producing optical fluoride crystals |
| 05/30/2002 | WO2002008500A3 In situ regrowth and purification of crystalline thin films |
| 05/23/2002 | US20020059896 Optical processing apparatus and optical processing method |
| 05/23/2002 | US20020059882 Single crystal tungsten alloy penetrator and method of making |
| 05/14/2002 | US6387178 Single crystal producing method and apparatus |
| 05/02/2002 | DE10051885A1 Process for drawing a single crystal comprises zone drawing in which a melt produced with an induction coil is subjected to a rotating magnetic field and solidifying, and rotating the single crystal during melt solidification |
| 04/18/2002 | WO2002031232A1 Method and device for producing optical fluoride crystals |
| 04/18/2002 | US20020045288 Laser irradiation apparatus and laser irradiation method |
| 04/16/2002 | US6373870 Laser irradiation apparatus and laser irradiation method |
| 04/09/2002 | US6368407 Single crystal-manufacturing equipment and a method for manufacturing the same |
| 04/04/2002 | US20020038892 Boride-based substrate for growing semiconducting layers thereon and a semiconductor devise using the same |
| 04/04/2002 | US20020038626 Excimer laser crystallization of amorphous silicon film |
| 03/27/2002 | CN1341954A Method for manufacturing crystal semiconductor material and method for making semiconductor device |
| 03/21/2002 | WO2002022920A1 Rare earth-iron garnet single crystal material and method for preparation thereof and device using rare earth-iron garnet single crystal material |
| 03/21/2002 | WO2002022919A2 Forming a single crystal semiconductor film on a non-crystalline surface |
| 03/21/2002 | US20020033129 In situ regrowth and purification of crystalline thin films |
| 03/14/2002 | WO2002021606A1 The method manufacturing p-type bismuth telluride thermoelectric materials for the enhancement of the yield of high quality ingot |
| 02/26/2002 | US6350315 Methods of producing doped semiconductors |
| 02/26/2002 | US6350314 Process for producing nitrogen-doped semiconductor wafers |
| 02/26/2002 | US6350313 Method of producing a polycrystalline silicon rod |
| 01/31/2002 | WO2002008500A2 In situ regrowth and purification of crystalline thin films |
| 01/30/2002 | EP1176231A2 A boride-based substrate for growing semiconducting layers thereon and a semiconductor device using the same |
| 01/17/2002 | US20020006681 Method of producing electrooptical device and method of producing driving substrate for driving electrooptical device |
| 01/09/2002 | CN1077610C 'Isocoponent floating zone' method for growing solid solution and forming phase morocrystal by crystal enclosing reaction |
| 01/08/2002 | US6336969 Optical processing apparatus and optical processing method |
| 01/03/2002 | WO2002001170A1 Method and apparatus for measuring temperature |
| 01/02/2002 | EP1167586A1 Process for crystal growth with a magnetic field |
| 12/20/2001 | US20010052315 Crystallogenesis method with magnetic field |
| 12/13/2001 | WO2001094669A1 Polycrystalline silicon rod and method for processing the same |
| 12/13/2001 | US20010050355 Strontium, ruthenium oxide |
| 12/06/2001 | US20010047748 Charging material and holding system for the charging material |
| 12/06/2001 | DE10025863A1 Chargiergut und Halterungssystem für das Chargiergut Charging material and holder system for the charging material |
| 11/08/2001 | DE10106369A1 Verfahren zur Herstellung von versetzungsfreien Silicium-Einkristallen A process for producing dislocation-free silicon single crystals |
| 10/31/2001 | DE10019601A1 Production of polycrystalline rod involves depositing silicon on carrier rod, rotating polycrystalline silicon rod about a longitudinal axis and cutting rod through with parting tool |
| 10/25/2001 | US20010032583 Method of producing a polycrystalline silicon rod |
| 09/13/2001 | US20010020441 Single crystal-manufacturing equipment and a method for manufacturing the same |
| 09/13/2001 | US20010020438 Method for manufacturing dislocation-free silicon single crystal |
| 09/06/2001 | US20010019014 Irradiating pulsed light to an amorphous base material such as glass to form the crystalline region having a nonlinear characteristic in an irradiated portion of the amorphous material |
| 08/21/2001 | US6277500 Superalloy |
| 08/21/2001 | CA2230323C Method for producing monocrystalline structures |
| 07/17/2001 | US6261420 Irradiating pulsed light to amorphous base material to produce therein one or more single crystals or polycrystals having nonlinear characteristic |
| 07/04/2001 | EP1113095A1 FZ Method single crystal growing apparatus |
| 06/27/2001 | CN1300884A Zone-smelting method by shaped heating piece for growing crystal |
| 06/26/2001 | US6251182 Susceptor for float-zone apparatus |
| 06/05/2001 | US6241820 Single crystal-manufacturing equipment and a method for manufacturing the same |
| 05/31/2001 | US20010001943 Methods of producing doped semiconductors |
| 05/22/2001 | US6235110 Method of producing recrystallized-material-member, and apparatus and heating method therefor |
| 05/15/2001 | CA2232777C Method for producing silicon for use in solar cells |
| 05/03/2001 | WO2001030689A1 Nanostructures, their applications and method for making them |
| 04/25/2001 | EP1094135A1 Process for producing heat-resistant intermetallic compound Ni3Al foil and product foil obtained |