Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
03/1990
03/14/1990EP0358322A2 Magnetic field sensors
03/13/1990US4908685 Magnetoelectric transducer
03/07/1990EP0357199A2 Improved position sensor
03/07/1990EP0357050A2 Assembly packing method for sensor element
02/1990
02/27/1990US4905318 Semiconductor hall element with magnetic powder in resin
02/21/1990EP0355044A2 Magnetoresistive read transducer assembly
01/1990
01/31/1990EP0188435B1 Magnetoresistive device for measuring magnetic field variations and method for fabricating the same
01/24/1990CN2051788U Contactless magnetic sensitive potentiometer
01/17/1990EP0351234A2 Systems for facilitating communications among asynchronously executing processes in digital data processing system
01/17/1990EP0350998A1 Target detector
01/10/1990EP0349626A1 Method for producing hall effect sensor for magnetic recording head
12/1989
12/20/1989EP0346817A2 Magnetic field sensor with a thin ferromagnetic layer
12/05/1989CA1263764A1 Integrated hall element
11/1989
11/28/1989US4883773 Method of producing magnetosensitive semiconductor devices
11/23/1989EP0342274A1 Arrangement for reducing the piezo effects in a semiconductor material that contains at least one piezo effect-sensitive electric device, and method of making the same
11/15/1989EP0226574B1 Magnetoresistive sensor for producing electric signals
10/1989
10/25/1989EP0338122A1 Integrated circuit comprising a semiconductor magnetic field sensor
10/17/1989US4875011 Magnetic sensor using integrated silicon Hall effect elements formed on the (100) plane of a silicon substrate
10/17/1989US4874438 Intermetallic compound semiconductor thin film and method of manufacturing same
09/1989
09/27/1989EP0334480A2 Magnetoresistive read transducer and a method for making it
09/06/1989EP0331051A2 Magnetic device integrated circuit interconnection system
08/1989
08/15/1989US4857418 Nitrogen doped tantalum layer
08/09/1989EP0326749A2 Magneto-resistive sensor element
08/09/1989EP0326741A2 Unbiased single magneto-resistive element ganged read head sensor
08/01/1989US4853631 Magnetoresistive sensor having inter-leaved magnetoresistive elements for detecting encoded magnetic information
07/1989
07/25/1989US4851944 Ganged MR head sensor
07/11/1989US4847584 Magnetoresistive magnetic sensor
07/04/1989US4845456 Magnetic sensor
06/1989
06/29/1989WO1989006054A2 Method for producing hall effect sensor for magnetic recording head
06/27/1989US4843365 Magnetoresistance element
05/1989
05/30/1989US4835510 Magnetoresistive element of ferromagnetic material and method of forming thereof
05/30/1989US4835509 Noncontact potentiometer
05/23/1989CA1254668A1 Hall element device with depletion region protection barrier
05/10/1989EP0315358A2 Method of making a current sensor
05/09/1989US4829352 Integrable Hall element
05/09/1989US4828966 Method for producing hall effect sensor for magnetic recording head
05/02/1989US4827218 Linear magnetoresistance-effect sensor with semiconductor and ferrimagnetic layers and its application in a magnetic-domain detector
04/1989
04/18/1989US4823177 Method and device for magnetizing thin films by the use of injected spin polarized current
04/11/1989US4821133 Bottleneck magnetoresistive element
04/04/1989CA1252220A1 Integrated hall element and amplifier with controlled voltage
03/1989
03/28/1989US4816948 Magneto-resistive head
03/21/1989US4814919 Soft-film-bias type magnetoresitive device
03/09/1989DE3828005A1 Encapsulated magnetoresistive component for floating (potential-free, voltageless) current measurement
03/08/1989EP0305978A2 Magnetoelectric element and magnetoelectric apparatus
03/02/1989DE3827606A1 Temperature compensation circuit for a Hall generator
03/01/1989EP0304945A2 Magnetic force detecting semiconductor device and method for manufacturing the same
03/01/1989CN1003480B Arrangement having enable integrating hall-element in an integrated circuit
02/1989
02/28/1989US4809109 Annealing to form ternary alloy between ferromagnetic and nonferromagnetic layers; high exchange bias field
02/22/1989EP0304280A2 A device for detecting magnetism
01/1989
01/31/1989CA1249667A1 Buried hall element
01/24/1989US4800457 Multilayer alloys, contactors
12/1988
12/14/1988CN87215461U Symmetry hall device
12/08/1988DE3718172A1 Encapsulation of an electronic component
11/1988
11/02/1988EP0288766A2 Magnetoresistive sensor with improved antiferromagnetic film
11/02/1988EP0288765A2 Magnetoresistive sensor with mixed phase antiferromagnetic film
11/01/1988US4782413 Iron-manganese alloy
11/01/1988US4782375 Integratable hall element
10/1988
10/12/1988EP0286079A2 Sensing devices utilizing magneto electric transducers
10/05/1988EP0285016A1 Hall effect device
09/1988
09/21/1988EP0283163A1 Magnetoresistance element
09/20/1988US4772929 Hall sensor with integrated pole pieces
09/06/1988US4769093 Magnetoresistive device
08/1988
08/24/1988EP0279537A2 Magnetoresistive sensor and process for its manufacture
08/23/1988US4765345 Magnetic sensor for jaw tracking device
08/18/1988DE3703383A1 Encapsulation of an electronic component
08/17/1988EP0278142A1 Process for the manufacture of thin film magnetic transducers
08/03/1988EP0276784A2 Vialess shorting bars for magnetoresistive devices
08/02/1988US4761569 Dual trigger Hall effect I.C. switch
07/1988
07/26/1988US4760285 Hall effect device with epitaxal layer resistive means for providing temperature independent sensitivity
07/21/1988DE3800243A1 Magnetoresistive element made from ferromagnetic material, and method for producing it
07/06/1988EP0273481A2 Non-oriented gear tooth sensor using a Hall cell
07/05/1988US4755897 Magnetoresistive sensor with improved antiferromagnetic film
06/1988
06/28/1988US4754431 Vialess shorting bars for magnetoresistive devices
06/28/1988US4754221 Position detecting apparatus for detecting a signal magnetic field indicative of a desired position
06/21/1988US4752733 Compensating circuit for a magnetic field sensor
06/15/1988EP0271018A2 Thin film solid state device
06/15/1988EP0271017A2 Magnetic film memory cell or sensor
06/01/1988EP0269510A2 Improved structure for Hall device
05/1988
05/17/1988US4745363 Non-oriented direct coupled gear tooth sensor using a Hall cell
04/1988
04/19/1988US4739264 Magnetic sensor using a plurality of Hall effect devices
02/1988
02/23/1988CA1233202A1 Method and device for stabilizing the operating point of a hall crystal
02/18/1988DE3720148A1 Stellungsgeberbaueinheiten und verfahren zu deren herstellung Stellungsgeberbaueinheiten and processes for their preparation
02/03/1988EP0255052A2 Noncontact potentiometer
12/1987
12/08/1987US4712064 Magnetoresistive sensor for detecting position or speed of a ferromagnetic body
11/1987
11/24/1987US4709214 Integrated Hall element and amplifier with controlled offset voltage
11/11/1987EP0244737A2 Hall element
11/11/1987EP0244577A1 Integrable Hall element
11/11/1987CN87102998A Integrable hall element
11/04/1987EP0243566A2 An improved magnetic resistor-type sensor for encoders
11/03/1987US4704575 Hall-effect current clamp
10/1987
10/28/1987EP0243070A2 Semiconductor device of III-V compound
10/13/1987US4700211 Sensitive magnetotransistor magnetic field sensor
10/06/1987US4698522 Structure for Hall device for compensation of first and second order voltage offsets
09/1987
09/16/1987EP0237280A2 Magnetic sensor
09/08/1987US4692703 Magnetic field sensor having a Hall effect device with overlapping flux concentrators
07/1987
07/01/1987EP0226574A1 Magnetoresistive sensor for producing electric signals.
06/1987
06/16/1987US4673964 Buried Hall element
06/02/1987US4670732 Electrical lapping guide resistor
05/1987
05/26/1987US4668914 Circular, amorphous metal, Hall effect magnetic field sensor with circumferentially spaced electrodes
05/26/1987US4667391 Melting, crystallization, silicon dioxide dielectrics