Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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03/14/1990 | EP0358322A2 Magnetic field sensors |
03/13/1990 | US4908685 Magnetoelectric transducer |
03/07/1990 | EP0357199A2 Improved position sensor |
03/07/1990 | EP0357050A2 Assembly packing method for sensor element |
02/27/1990 | US4905318 Semiconductor hall element with magnetic powder in resin |
02/21/1990 | EP0355044A2 Magnetoresistive read transducer assembly |
01/31/1990 | EP0188435B1 Magnetoresistive device for measuring magnetic field variations and method for fabricating the same |
01/24/1990 | CN2051788U Contactless magnetic sensitive potentiometer |
01/17/1990 | EP0351234A2 Systems for facilitating communications among asynchronously executing processes in digital data processing system |
01/17/1990 | EP0350998A1 Target detector |
01/10/1990 | EP0349626A1 Method for producing hall effect sensor for magnetic recording head |
12/20/1989 | EP0346817A2 Magnetic field sensor with a thin ferromagnetic layer |
12/05/1989 | CA1263764A1 Integrated hall element |
11/28/1989 | US4883773 Method of producing magnetosensitive semiconductor devices |
11/23/1989 | EP0342274A1 Arrangement for reducing the piezo effects in a semiconductor material that contains at least one piezo effect-sensitive electric device, and method of making the same |
11/15/1989 | EP0226574B1 Magnetoresistive sensor for producing electric signals |
10/25/1989 | EP0338122A1 Integrated circuit comprising a semiconductor magnetic field sensor |
10/17/1989 | US4875011 Magnetic sensor using integrated silicon Hall effect elements formed on the (100) plane of a silicon substrate |
10/17/1989 | US4874438 Intermetallic compound semiconductor thin film and method of manufacturing same |
09/27/1989 | EP0334480A2 Magnetoresistive read transducer and a method for making it |
09/06/1989 | EP0331051A2 Magnetic device integrated circuit interconnection system |
08/15/1989 | US4857418 Nitrogen doped tantalum layer |
08/09/1989 | EP0326749A2 Magneto-resistive sensor element |
08/09/1989 | EP0326741A2 Unbiased single magneto-resistive element ganged read head sensor |
08/01/1989 | US4853631 Magnetoresistive sensor having inter-leaved magnetoresistive elements for detecting encoded magnetic information |
07/25/1989 | US4851944 Ganged MR head sensor |
07/11/1989 | US4847584 Magnetoresistive magnetic sensor |
07/04/1989 | US4845456 Magnetic sensor |
06/29/1989 | WO1989006054A2 Method for producing hall effect sensor for magnetic recording head |
06/27/1989 | US4843365 Magnetoresistance element |
05/30/1989 | US4835510 Magnetoresistive element of ferromagnetic material and method of forming thereof |
05/30/1989 | US4835509 Noncontact potentiometer |
05/23/1989 | CA1254668A1 Hall element device with depletion region protection barrier |
05/10/1989 | EP0315358A2 Method of making a current sensor |
05/09/1989 | US4829352 Integrable Hall element |
05/09/1989 | US4828966 Method for producing hall effect sensor for magnetic recording head |
05/02/1989 | US4827218 Linear magnetoresistance-effect sensor with semiconductor and ferrimagnetic layers and its application in a magnetic-domain detector |
04/18/1989 | US4823177 Method and device for magnetizing thin films by the use of injected spin polarized current |
04/11/1989 | US4821133 Bottleneck magnetoresistive element |
04/04/1989 | CA1252220A1 Integrated hall element and amplifier with controlled voltage |
03/28/1989 | US4816948 Magneto-resistive head |
03/21/1989 | US4814919 Soft-film-bias type magnetoresitive device |
03/09/1989 | DE3828005A1 Encapsulated magnetoresistive component for floating (potential-free, voltageless) current measurement |
03/08/1989 | EP0305978A2 Magnetoelectric element and magnetoelectric apparatus |
03/02/1989 | DE3827606A1 Temperature compensation circuit for a Hall generator |
03/01/1989 | EP0304945A2 Magnetic force detecting semiconductor device and method for manufacturing the same |
03/01/1989 | CN1003480B Arrangement having enable integrating hall-element in an integrated circuit |
02/28/1989 | US4809109 Annealing to form ternary alloy between ferromagnetic and nonferromagnetic layers; high exchange bias field |
02/22/1989 | EP0304280A2 A device for detecting magnetism |
01/31/1989 | CA1249667A1 Buried hall element |
01/24/1989 | US4800457 Multilayer alloys, contactors |
12/14/1988 | CN87215461U Symmetry hall device |
12/08/1988 | DE3718172A1 Encapsulation of an electronic component |
11/02/1988 | EP0288766A2 Magnetoresistive sensor with improved antiferromagnetic film |
11/02/1988 | EP0288765A2 Magnetoresistive sensor with mixed phase antiferromagnetic film |
11/01/1988 | US4782413 Iron-manganese alloy |
11/01/1988 | US4782375 Integratable hall element |
10/12/1988 | EP0286079A2 Sensing devices utilizing magneto electric transducers |
10/05/1988 | EP0285016A1 Hall effect device |
09/21/1988 | EP0283163A1 Magnetoresistance element |
09/20/1988 | US4772929 Hall sensor with integrated pole pieces |
09/06/1988 | US4769093 Magnetoresistive device |
08/24/1988 | EP0279537A2 Magnetoresistive sensor and process for its manufacture |
08/23/1988 | US4765345 Magnetic sensor for jaw tracking device |
08/18/1988 | DE3703383A1 Encapsulation of an electronic component |
08/17/1988 | EP0278142A1 Process for the manufacture of thin film magnetic transducers |
08/03/1988 | EP0276784A2 Vialess shorting bars for magnetoresistive devices |
08/02/1988 | US4761569 Dual trigger Hall effect I.C. switch |
07/26/1988 | US4760285 Hall effect device with epitaxal layer resistive means for providing temperature independent sensitivity |
07/21/1988 | DE3800243A1 Magnetoresistive element made from ferromagnetic material, and method for producing it |
07/06/1988 | EP0273481A2 Non-oriented gear tooth sensor using a Hall cell |
07/05/1988 | US4755897 Magnetoresistive sensor with improved antiferromagnetic film |
06/28/1988 | US4754431 Vialess shorting bars for magnetoresistive devices |
06/28/1988 | US4754221 Position detecting apparatus for detecting a signal magnetic field indicative of a desired position |
06/21/1988 | US4752733 Compensating circuit for a magnetic field sensor |
06/15/1988 | EP0271018A2 Thin film solid state device |
06/15/1988 | EP0271017A2 Magnetic film memory cell or sensor |
06/01/1988 | EP0269510A2 Improved structure for Hall device |
05/17/1988 | US4745363 Non-oriented direct coupled gear tooth sensor using a Hall cell |
04/19/1988 | US4739264 Magnetic sensor using a plurality of Hall effect devices |
02/23/1988 | CA1233202A1 Method and device for stabilizing the operating point of a hall crystal |
02/18/1988 | DE3720148A1 Stellungsgeberbaueinheiten und verfahren zu deren herstellung Stellungsgeberbaueinheiten and processes for their preparation |
02/03/1988 | EP0255052A2 Noncontact potentiometer |
12/08/1987 | US4712064 Magnetoresistive sensor for detecting position or speed of a ferromagnetic body |
11/24/1987 | US4709214 Integrated Hall element and amplifier with controlled offset voltage |
11/11/1987 | EP0244737A2 Hall element |
11/11/1987 | EP0244577A1 Integrable Hall element |
11/11/1987 | CN87102998A Integrable hall element |
11/04/1987 | EP0243566A2 An improved magnetic resistor-type sensor for encoders |
11/03/1987 | US4704575 Hall-effect current clamp |
10/28/1987 | EP0243070A2 Semiconductor device of III-V compound |
10/13/1987 | US4700211 Sensitive magnetotransistor magnetic field sensor |
10/06/1987 | US4698522 Structure for Hall device for compensation of first and second order voltage offsets |
09/16/1987 | EP0237280A2 Magnetic sensor |
09/08/1987 | US4692703 Magnetic field sensor having a Hall effect device with overlapping flux concentrators |
07/01/1987 | EP0226574A1 Magnetoresistive sensor for producing electric signals. |
06/16/1987 | US4673964 Buried Hall element |
06/02/1987 | US4670732 Electrical lapping guide resistor |
05/26/1987 | US4668914 Circular, amorphous metal, Hall effect magnetic field sensor with circumferentially spaced electrodes |
05/26/1987 | US4667391 Melting, crystallization, silicon dioxide dielectrics |