| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 05/02/2002 | EP1202405A1 Optical device for emitting a laser light beam, optical reader comprising said device and protective/insulating package for a light beam emission source |
| 05/02/2002 | EP1202355A2 Semiconductor light-emitting device and method of manufacturing the same |
| 05/02/2002 | EP1202084A2 Optical communication module and manufacturing method thereof |
| 05/02/2002 | EP1201012A1 Semiconductor structures using a group iii-nitride quaternary material system |
| 05/02/2002 | EP1200652A1 Magnesium-doped iii-v nitrides & methods |
| 05/02/2002 | EP0683924B1 Method for fabricating a p-type graded composition ohmic contact for p-type II-VI semiconductors |
| 05/02/2002 | DE10051465A1 Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis A process for producing a semiconductor device based on GaN |
| 05/02/2002 | DE10051159A1 LED-Modul, zB Weißlichtquelle LED module, eg white light source |
| 05/02/2002 | CA2671924A1 Light-emitting or light-receiving semiconductor module and method for making the same |
| 05/01/2002 | CN2489347Y Light source package |
| 05/01/2002 | CN1347582A Semiconductor structures using group III-nitride quaternery material system |
| 05/01/2002 | CN1347581A Semiconductor structures having strain compensated layer and method of fabrication |
| 05/01/2002 | CN1347569A Flat panel solid state light source |
| 05/01/2002 | CN1347161A LED drive circuit and light transmission module therewith |
| 05/01/2002 | CN1347160A Illuminant semiconductor element and method for mfg. same |
| 05/01/2002 | CN1084055C Efficient LED and its making method |
| 04/30/2002 | US6381386 V-shaped optical coupling structure |
| 04/30/2002 | US6380689 Driving apparatus for active matrix type luminescent panel |
| 04/30/2002 | US6380564 Semiconductor light emitting device |
| 04/30/2002 | US6380550 Electroluminescent device comprising porous silicon |
| 04/30/2002 | US6380108 Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby |
| 04/30/2002 | US6380051 Growth promoting film is partially formed on a substrate having a portion which acts as a growth suppressing film on a surface thereof, and a nitride compound semiconductor film of a single crystal is grown thereon. |
| 04/30/2002 | US6379985 Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates |
| 04/30/2002 | US6379635 Of first and second different ions, by contacting a complex containing the two ions with a dispersing medium at temperature to allow formation by pyrolysis of the nanocrystalline material; forming cadmium selenide; optics |
| 04/30/2002 | US6379482 Manufacturing device and method of the exposure device |
| 04/30/2002 | US6379022 Auxiliary illuminating device having adjustable color temperature |
| 04/30/2002 | CA2115589C Semiconductor laser and method of manufacturing the same |
| 04/25/2002 | WO2002033760A1 Method for the production of a semiconductor component made from gan |
| 04/25/2002 | WO2002033756A1 Led module |
| 04/25/2002 | WO2002033312A2 A light-emitting assembly |
| 04/25/2002 | WO2002033022A2 Lanthanide complexes for phosphor applications |
| 04/25/2002 | US20020048964 Growth promoting film is partially formed on a substrate having a portion which acts as a growth suppressing film on a surface thereof, and a nitride compound semiconductor film of a single crystal is grown thereon. |
| 04/25/2002 | US20020048956 Method and apparatus for shaping semiconductor surfaces |
| 04/25/2002 | US20020048909 Process of vapor phase growth of nitride semiconductor |
| 04/25/2002 | US20020048836 Low temperature buffer layer is stably grown at high rate on a sapphire substrate |
| 04/25/2002 | US20020048434 Optical connector device |
| 04/25/2002 | US20020048431 Optical communication module and manufacturing method thereof |
| 04/25/2002 | US20020048304 Radiation emitting devices |
| 04/25/2002 | US20020048302 Gallium nitride semiconductor laser and a manufacturing process thereof |
| 04/25/2002 | US20020048289 Devices with optical gain in silicon |
| 04/25/2002 | US20020048169 Light-emitting diode based products |
| 04/25/2002 | US20020048163 Light source device, illumination device liquid crystal device and electronic apparatus |
| 04/25/2002 | US20020048068 Transceiver module |
| 04/25/2002 | US20020047642 Light emitting device and drive IC of portable telephone |
| 04/25/2002 | US20020047143 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| 04/25/2002 | US20020047135 P-N junction-based structures utilizing HVPE grown III-V compound layers |
| 04/25/2002 | US20020047131 Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction |
| 04/25/2002 | US20020047130 Light Source |
| 04/25/2002 | US20020047128 Blue light emitting diode with electrode structure for distributing a current density |
| 04/25/2002 | US20020047127 P-N homojunction-based structures utilizing HVPE grown III-V compound layers |
| 04/25/2002 | US20020047123 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| 04/25/2002 | US20020046693 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device |
| 04/25/2002 | DE10051242A1 Lichtemittierende Vorrichtung mit beschichtetem Leuchtstoff A light emitting device with coated phosphor |
| 04/25/2002 | DE10047462A1 Leuchtdiode mit einem Leuchtkörper LED with a luminous body |
| 04/24/2002 | EP1199757A2 Light emitting device with with coated phosphor |
| 04/24/2002 | EP1199756A2 3-5 group compound semiconductor and light-emitting element |
| 04/24/2002 | EP1199755A1 ZnO COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND PRODUCTION METHOD THEREOF |
| 04/24/2002 | EP1199753A2 Optoelectronic semiconductor device |
| 04/24/2002 | EP1199585A2 Optical connector device |
| 04/24/2002 | EP1199388A1 Group III nitride film containing aluminum with hexagonal system crystal structure |
| 04/24/2002 | EP1199180A1 Optical writing head comprising self-scanning light-emitting element array |
| 04/24/2002 | EP1198840A1 Method for making a device comprising layers of planes of quantum dots |
| 04/24/2002 | EP1198703A1 Photoluminescent semiconductor materials |
| 04/24/2002 | CN2488178Y Surface light emission apparatus |
| 04/24/2002 | CN1346518A Photoelectric conversion functional element and production method thereof |
| 04/24/2002 | CN1346512A Dual process semiconductor heterostructure and methods |
| 04/24/2002 | CN1346154A High brightness luminescence device |
| 04/24/2002 | CN1083650C Control circuits for paralled optical interconnects transmission and receiving and method thereof |
| 04/23/2002 | US6377598 Semiconductor light-emitting device and method for producing the same |
| 04/23/2002 | US6377597 Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device |
| 04/23/2002 | US6377596 Semiconductor materials, methods for fabricating semiconductor materials, and semiconductor devices |
| 04/23/2002 | US6376902 Optoelectronic structural element |
| 04/23/2002 | US6376866 GaN semiconductor light emitting device having a group II-VI substrate |
| 04/23/2002 | US6376865 Light emitting diode and method of fabricating thereof |
| 04/23/2002 | US6376864 Semiconductor light-emitting device and method for manufacturing the same |
| 04/23/2002 | US6376339 Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, and gallium nitride semiconductor structures fabricated thereby |
| 04/23/2002 | US6376273 Capping layer having an oxidation rate which is less than the oxidation rate of the ohmic contact |
| 04/23/2002 | US6375737 Method of self-assembly silicon quantum dots |
| 04/23/2002 | US6375340 Led component group with heat dissipating support |
| 04/18/2002 | WO2002032022A2 Optical communications apparatus |
| 04/18/2002 | WO2002031890A2 OPTOELECTRONIC AND MICROELECTRONIC DEVICES INCLUDING CUBIC ZnMgO AND/OR CdMgO ALLOYS AND METHODS OF FABRICATING SAME |
| 04/18/2002 | WO2002031882A1 An optoelectronic device |
| 04/18/2002 | WO2002031865A1 Method of making an electrode |
| 04/18/2002 | WO2002001608A3 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES |
| 04/18/2002 | WO2001059814A3 Semiconductor structure |
| 04/18/2002 | US20020045286 Semiconductor light-emitting device and method of manufacturing the same |
| 04/18/2002 | US20020044456 Luminaire based on the light emission of light-emitting diodes |
| 04/18/2002 | US20020043926 Light-emitting unit |
| 04/18/2002 | US20020043923 Image display unit and production method thereof |
| 04/18/2002 | US20020043659 Device and manufacturing method for device including function block, and light transmitting device |
| 04/18/2002 | US20020043331 Method for manufacturing a group III nitride compound semiconductor device |
| 04/18/2002 | US20020043208 Crystal growth method |
| 04/18/2002 | US20020043012 Illumination apparatus |
| 04/18/2002 | DE10026435A1 Kalzium-Magnesium-Chlorosilikat-Leuchtstoff und seine Anwendung bei Lumineszenz-Konversions-LED Calcium-magnesium chlorosilicate phosphor and its application in luminescence conversion LED |
| 04/17/2002 | EP1198016A2 Stenciling phosphor layers on light emitting diodes |
| 04/17/2002 | EP1197996A2 A III nitride epitaxial wafer and usage of the same |
| 04/17/2002 | EP1197576A1 Method for forming thin-film layer for device and organic electroluminescence device |
| 04/17/2002 | EP1196971A1 Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same |
| 04/17/2002 | EP1196955A1 Long-lifetime polymer light-emitting devices with improved luminous efficiency and radiance |
| 04/17/2002 | EP1196954A1 Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element |