| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 06/11/2002 | US6403984 Amorphous semiconductor photocoupler |
| 06/11/2002 | US6403983 Quantum well type light-emitting diode |
| 06/11/2002 | US6403975 Components have faborable optical and electrical properties and are suitable for integration on a si substrate. |
| 06/11/2002 | US6403881 Electronic component package assembly and method of manufacturing the same |
| 06/11/2002 | US6403809 Compounds for electronic devices |
| 06/11/2002 | US6403391 Semiconductor light emitting device and method for manufacturing the same |
| 06/11/2002 | US6403233 Article comprising creep-resistant and stress-reducing solder |
| 06/11/2002 | US6402354 Indirect lighting system for vehicle interior |
| 06/11/2002 | US6402347 Light generator for introducing light into a bundle of optical fibers |
| 06/11/2002 | US6402339 Passenger-cabin lighting device |
| 06/06/2002 | WO2002045183A2 Substrate with semiconductor layer, electronic component, electronic circuit, printable composition and method for production thereof |
| 06/06/2002 | WO2002045179A1 Light-emitting device and its manufacturing method and visible-light-emitting device |
| 06/06/2002 | WO2002044611A1 Headlamp/camera unit, especially for medical uses |
| 06/06/2002 | US20020068468 (a) forming a p-type impurity doped compound semiconductor layer on the substrate; and (b) applying a microwave treatment over the p-type impurity doped compound semiconductor layer. |
| 06/06/2002 | US20020068396 Silicon wafer with embedded optoelectronic material for monolithic OEIC |
| 06/06/2002 | US20020068374 The GaN compound semiconductor layer to which the P type impurity is doped is irradiated with electromagnetic radiation of a predetermined wavelength to selectively agitate hydrogen bonds to dissociate H, and activate impurity |
| 06/06/2002 | US20020068373 Method for fabricating light emitting diodes |
| 06/06/2002 | US20020068201 Providing expitaxially compatible sacrificial template, depositing single crystal aluminum, gallium indium nitride material on template to form composite sacrificial template/nitride article, parting |
| 06/06/2002 | US20020067892 Optical module |
| 06/06/2002 | US20020066905 Wing-shaped surface mount package for light emitting diodes |
| 06/06/2002 | US20020066899 Silicon wafer with embedded optoelectronic material for monolithic OEIC |
| 06/06/2002 | US20020066403 Growing areas using a mask patterned on a substrate surface and growing a nitride in the growing areas, while forming facet structures |
| 06/06/2002 | US20020066401 Synthesis of colloidal nanocrystals |
| 06/06/2002 | DE19964252A1 Oberflächenmontierbares Bauelement für eine LED-Weißlichtquelle Surface mount device for an LED white light source |
| 06/06/2002 | DE10059532A1 Semiconductor chip for use with a luminous diode in optoelectronics, has an active layer with a zone to emit photons fixed on a fastening side on a carrier body |
| 06/05/2002 | EP1211737A2 A semiconductor light-emitting element |
| 06/05/2002 | EP1211736A2 A semiconductor light-emitting element |
| 06/05/2002 | EP1211735A1 Light emitting diode with improved heat dissipation |
| 06/05/2002 | EP1211715A2 A method for fabricating a IIIV nitride film |
| 06/05/2002 | EP1211539A2 Optical module |
| 06/05/2002 | EP1210737A1 Light-emitting diode with a structured surface |
| 06/05/2002 | EP1210548A1 Diffuse lighting arrangement |
| 06/05/2002 | CN2494562Y Surface adhered light emitting two-electrode body |
| 06/05/2002 | CN1352809A Conductive polymers |
| 06/04/2002 | US6400101 Control circuit for LED and corresponding operating method |
| 06/04/2002 | US6399966 Light emitting nitride semiconductor device, and light emitting apparatus and pickup device using the same |
| 06/04/2002 | US6399965 Semiconductor light emitting device with high yield and low power consumption |
| 06/04/2002 | US6399963 Semiconductor light emitting element and its manufacturing method |
| 06/04/2002 | US6399502 Etching, depositing dielectric, polishing |
| 06/04/2002 | US6399473 Epitaxial growth intermetallic |
| 06/04/2002 | US6399409 Method for fabricating semiconductor light emitting element |
| 06/04/2002 | US6399408 Process for producing light emitting device |
| 06/04/2002 | US6399407 Methods of electrostatic control in semiconductor devices |
| 06/04/2002 | US6399403 Method of fabricating a semiconductor mesa device |
| 06/04/2002 | US6399225 Silicon-and-nitrogen-containing luminescent substance, method for forming the same, and light emitting device using the same |
| 06/04/2002 | US6398943 Process for producing a porous layer by an electrochemical etching process |
| 05/30/2002 | WO2002043443A2 Led-driver circuit |
| 05/30/2002 | WO2002043160A1 Light emitting semiconductor components and method for production thereof |
| 05/30/2002 | WO2002043159A2 Doped semiconductor nanocrystals |
| 05/30/2002 | WO2002043134A1 Method and system for manufacturing electronic packaging units |
| 05/30/2002 | WO2002043112A2 Method for making a substrate |
| 05/30/2002 | WO2001095443A8 Single mode vertical cavity surface emitting laser |
| 05/30/2002 | WO2001093310A9 Semiconductor device with vertical electronic injection and method for making same |
| 05/30/2002 | US20020064675 Dual process semiconductor heterostructures |
| 05/30/2002 | US20020064345 Optical waveguide path, manufacturing method and coupling method of the same, and optical waveguide path coupling structure |
| 05/30/2002 | US20020064195 Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereof |
| 05/30/2002 | US20020064032 Device mounting method |
| 05/30/2002 | US20020063917 Optical data bus communication in an artificial satellite |
| 05/30/2002 | US20020063521 High power led lamp |
| 05/30/2002 | US20020063520 Pre-formed fluorescent plate - LED device |
| 05/30/2002 | US20020063515 Light-emitting display device |
| 05/30/2002 | US20020063329 Semiconductor light emitting device |
| 05/30/2002 | US20020063320 Molded electronic component |
| 05/30/2002 | US20020063301 Semiconductor light-emitting device and light-emitting display device therewith |
| 05/30/2002 | US20020063258 Gallium nitride-type semiconductor device |
| 05/30/2002 | US20020063256 Method and structure for forming an electrode on a light emitting device |
| 05/29/2002 | EP0960037B1 Luminous element, especially for illuminating function symbols or indicating functions in automobiles |
| 05/29/2002 | DE10143731A1 Sende-Empfangs-Gerät-Modul Transmission-reception device module |
| 05/29/2002 | DE10058622A1 Gemouldetes elektronisches Bauelement Gemouldetes electronic component |
| 05/29/2002 | CN1351384A Semiconductor light emitting element and manufacture thereof |
| 05/29/2002 | CN1351383A Technology for preparing blue LED chip based on gallium nitride |
| 05/28/2002 | US6396864 Thermally conductive coatings for light emitting devices |
| 05/28/2002 | US6396862 LED with spreading layer |
| 05/28/2002 | US6396610 Semiconductor integrated circuit |
| 05/28/2002 | US6396083 Optical semiconductor device with resonant cavity tunable in wavelength, application to modulation of light intensity |
| 05/28/2002 | US6396082 Light-emitting diode |
| 05/28/2002 | US6396081 Light source for generating a visible light |
| 05/28/2002 | US6395573 Laser diode and method for fabricating the same |
| 05/28/2002 | US6395572 Method of producing semiconductor light-emitting element |
| 05/28/2002 | US6395564 Method for fabricating a light-emitting device with uniform color temperature |
| 05/28/2002 | US6394666 Light receiving/emitting element module and manufacturing method thereof |
| 05/28/2002 | US6394626 Flexible light track for signage |
| 05/23/2002 | WO2002041411A1 Radiation emitting semiconductor component based on gan and method for production thereof |
| 05/23/2002 | WO2002041410A1 Luminescent diode with high decoupling efficiency |
| 05/23/2002 | WO2002041406A1 Microelectronic package having improved light extraction |
| 05/23/2002 | WO2002041364A2 Led packages having improved light extraction |
| 05/23/2002 | WO2002041362A2 Laser separated die with tapered sidewalls for improved light extraction |
| 05/23/2002 | WO2002015281A3 Glass-to-metal hermetically sealed led array |
| 05/23/2002 | US20020061648 Selecting materials for forming substrate and epitaxial material; epitaxial layer is kept under compressive stress if lattice constant is greater that substrate, if lattice constant is less, it is subjected to tensile stress |
| 05/23/2002 | US20020061392 Web process interconnect in electronic assemblies |
| 05/23/2002 | US20020061173 Platform and optical module, method of manufacture thereof, and optical transmission device |
| 05/23/2002 | US20020060326 Method for manufacturing a gallium nitride group compound semiconductor |
| 05/23/2002 | US20020060324 Zinc oxide crystal luminescent element with improved orientation/crystallinity |
| 05/23/2002 | DE10156139A1 III-V composite semiconductor used for light-emitting diodes contains a p-type doping element |
| 05/23/2002 | DE10150401A1 Optoelectronic component has solder connections between metallisation structures of optical component system and optical lens system |
| 05/23/2002 | DE10057559A1 Illuminating system comprises a substrate which is provided with light emitting semiconductor elements and electrical supply lines, and is covered by means of a holed mask |
| 05/23/2002 | DE10056476A1 Radiation-emitting semiconductor body used as a light emitting diode comprises a radiation-producing layer sequence and a window layer having one or a number of subsequent aluminum gallium arsenide layers produced by liquid phase epitaxy |
| 05/23/2002 | DE10056475A1 Radiation-emitting semiconductor element comprises a silicon carbide-based substrate having a number of gallium nitride-based layers containing an active region arranged between an n-conducting layer and a stressed p-conducting layer |
| 05/23/2002 | DE10055710A1 Production of optoelectronic semiconductor element used as LED or laser diode comprises preparing a layer of amorphous Group III element nitride containing a rare earth element, and heat treating whilst inserting the rare earth element |
| 05/22/2002 | EP1207563A2 Direct bonding of flip-chip light-emitting diode and flip-chip ESD protection chip to electrodes in a package |