Patents
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
06/2002
06/27/2002US20020081372 Method for fabricating an organic light emitting diode
06/27/2002US20020081078 Configuration for coupling optoelectronic elements and fiber arrays
06/27/2002US20020080622 Faceted multi-chip package to provide a beam of uniform white light from multiple monochrome LEDs
06/27/2002US20020080615 LED collimation optics with improved performance and reduced size
06/27/2002US20020080501 Light permeable fluorescent cover for light emitting diode
06/27/2002US20020080463 Electrochromic rearview mirror incorporating a third surface partially transmissive reflector
06/27/2002US20020079837 Chip-type LED and process of manufacturing the same
06/27/2002US20020079506 Semiconductor light emitting device including a fluorescent material
06/27/2002US20020079502 Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device
06/27/2002US20020079500 Light emitting diode
06/27/2002US20020079498 Semiconductor light emitting device and method for producing the same
06/27/2002DE10162421A1 Lichtemittierendes Bauteil sowie zugehöriges Herstellungsverfahren The light-emitting device and manufacturing method thereof
06/26/2002EP1217665A2 Structure and method for doping of III-V compounds
06/26/2002EP1217664A2 Semiconductor lighting unit and method for producing the same
06/26/2002EP1216266A1 Transparent liquid resin material for smt-enabled led-applications at higher temperatures and higher luminosities
06/26/2002CN2497433Y Prisma surface light-emitting diocle
06/26/2002CN1355936A Hybrid white light source comprising LED and phosphor-LED
06/26/2002CN1355571A Packaging method for LED
06/26/2002CN1355570A LED and its preparing process
06/26/2002CN1355569A Structure of LED and its preparing process
06/25/2002US6410980 Electronic part with groove in lead
06/25/2002US6410944 Very high density doped p-type gaas or graded p-type al-ga-as reduces the potential barrier formed in the p-type gan, thus significantly reducing the ohmic resistance.
06/25/2002US6410943 Light emitting device contact layers having substantially equal spreading resistance and method of manufacture
06/25/2002US6410942 Enhanced light extraction through the use of micro-LED arrays
06/25/2002US6410940 Micro-size LED and detector arrays for minidisplay, hyper-bright light emitting diodes, lighting, and UV detector and imaging sensor applications
06/25/2002US6410939 Semiconductor light-emitting device and method of manufacturing the same
06/25/2002US6410436 Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate
06/25/2002US6410348 Interface texturing for light-emitting device
06/25/2002US6410347 Real time epitaxial growth of vertical cavity surface-emitting laser using a reflectometry
06/25/2002US6410162 Zinc oxide films containing P-type dopant and process for preparing same
06/25/2002US6409361 Light-emitting diode indicator lamp
06/21/2002CA2360057A1 Method for reproducibly forming a predetermined quantum dot structure and device produced using same
06/20/2002WO2002049121A1 Multi-wavelength luminous element
06/20/2002WO2002048701A2 Nanosensors
06/20/2002WO2002048434A2 Gallium nitride materials and methods for forming layers thereof
06/20/2002WO2002013231A3 Radiation source and method for producing a lens mould
06/20/2002WO2002001604A3 Optoelectronic device with integrated wavelength filtering
06/20/2002WO2001095402A3 Semiconductor light-emitting device
06/20/2002US20020076904 Separation method for gallium nitride devices on lattice-mismatched substrates
06/20/2002US20020076849 Focusing cup on a folded frame for surface mount optoelectric semiconductor package
06/20/2002US20020075927 Semiconductor laser and method for manufacturing the same
06/20/2002US20020074624 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
06/20/2002US20020074561 Semiconductor device and fabrication method thereof, and fabrication method of semiconductor substrate
06/20/2002US20020074558 Nitride type compound semiconductor light emitting element
06/20/2002US20020074556 GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
06/20/2002US20020074552 Gallium nitride materials and methods
06/20/2002US20020074314 Metal-assisted chemical etch to produce porous group III-V materials
06/20/2002US20020073917 Using a group III element and ammonia for nitriding in presence of hydrogen as carrier gas, improved crystallinity by controlling a flow rate ratio between starting material gas and carrier gas
06/20/2002CA2430888A1 Nanosensors
06/19/2002EP1214618A2 Electro-optical module comprising a housing
06/19/2002EP0852816B1 Optoelectronic semiconductor component
06/19/2002CN1354528A Self-passinvating non-planar junction subgroup III nitride semi-conductor device and its making method
06/19/2002CN1354527A Cutting method of subgroup III nitride semi-conductor light-emitting component
06/19/2002CN1354526A Light-emitting element wafer-covering package method and its structure
06/19/2002CN1354525A Package of light emitting diode wafer and structure of its printed circuit substrate
06/18/2002US6407928 LED surface mount
06/18/2002US6407438 Semiconductor opto-electronic device packaging
06/18/2002US6407411 Led lead frame assembly
06/18/2002US6407410 Semiconductor optical device
06/18/2002US6407409 Nucleating gan in a reactor results in a gan nucleation layer having a thickness of a few monolayers.
06/18/2002US6407405 Lamination structure of zno layers and znte layers alternately stacked on a substrate, wherein n is doped at least in the znte layer.
06/18/2002US6406931 Process control; forming buffer layer
06/18/2002US6406930 Forming at low temperature
06/18/2002US6406795 Multilayer
06/13/2002WO2002047221A1 Modified distributed bragg reflector for vertical cavity surface-emitting laser resonant wavelength tuning sensitivity control
06/13/2002WO2002047147A1 Method for producing a positively doped semiconductor with large forbidden band
06/13/2002WO2002047128A1 Patterned phase shift layers for wavelength-selectable vertical-cavity surface-emitting laser (vcsel) arrays
06/13/2002WO2002047117A2 Preparation of nanocrystallites
06/13/2002US20020072253 Method of removing an amorphous oxide from a monocrystalline surface
06/13/2002US20020072204 GaN related compound semiconductor and process for producing the same
06/13/2002US20020072137 Optosemiconductor device and the method for its manufacture
06/13/2002US20020071952 Preparation of nanocrystallites
06/13/2002US20020071471 Heterogeneous composite semiconductor structures for enhanced oxide and air aperture formation for semiconductor lasers and detectors and method of manufacture
06/13/2002US20020070681 Led lamp
06/13/2002US20020070449 Light-emitting device and production thereof
06/13/2002US20020070387 Focusing cup on a folded frame for surface mount optoelectric semiconductor package
06/13/2002US20020070386 III-nitride light-emitting device with increased light generating capability
06/13/2002US20020070383 Group III nitride compound semiconductor device and method for producing the same
06/13/2002US20020070360 IR diode based high intensity light
06/13/2002US20020070125 Method for lift-off of epitaxially grown semiconductors by electrochemical anodic etching
06/13/2002DE19932907C2 Anordnung zum Ankoppeln von optoelektronischen Elementen Arrangement for coupling optoelectronic elements
06/13/2002DE10060439A1 Contact metallization used in production of semiconductors contains copper distributed in partial volume
06/13/2002DE10059498A1 Substrat mit einer halbleitenden Schicht, elektronisches Bauelement mit diesem Substrat, elektronische Schaltung mit mindestens einem solchen elektronischen Bauelement, druckbare Zusammensetzung sowie Verfahren zur Herstellung eines Substrats Substrate having a semiconductive layer, an electronic component with said substrate, electronic circuit with at least one such electronic device printable composition and process for the preparation of a substrate
06/12/2002EP1213773A1 Bulk lens, light emitting body, lighting device and optical information system
06/12/2002EP1213771A2 Optoelectronic semiconductor device
06/12/2002EP1213770A2 Moulded electronic component
06/12/2002EP1038056B1 A method of growing a buffer layer using molecular beam epitaxy
06/12/2002CN1353867A Nitride semiconductor device
06/12/2002CN1353466A LED with reverse tunnel layer
06/12/2002CN1353465A Indium gallium nitride LED
06/12/2002CN1086250C Multiple colour light emitting diode
06/12/2002CN1086249C Semiconductor light emitting device
06/11/2002US6404792 Semiconductor light-emitting device
06/11/2002US6404454 Optical printer and print head thereof
06/11/2002US6404131 Light emitting display
06/11/2002US6404125 Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes
06/11/2002US6404042 Subcarrier and semiconductor device
06/11/2002US6403987 Electrode for light-emitting semiconductor devices
06/11/2002US6403986 The semiconductor region opposes the optical semiconductor element and essentially surrounds the optical semiconductor element to form walls.
06/11/2002US6403985 Method of making light emitting diode displays