| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 07/16/2002 | US6420736 Window for gallium nitride light emitting diode |
| 07/16/2002 | US6420735 Surface-emitting light-emitting diode |
| 07/16/2002 | US6420734 Light emitting diode and a method manufacturing the same |
| 07/16/2002 | US6420733 Semiconductor light-emitting device and manufacturing method thereof |
| 07/16/2002 | US6420732 Light emitting diode of improved current blocking and light extraction structure |
| 07/16/2002 | US6420731 Light emitting diode and manufacturing method thereof |
| 07/16/2002 | US6420727 Light-emitting semiconductor device with quantum-wave interference layers |
| 07/16/2002 | US6420283 Crystallization of nitrides layers on synthetic mica substrates |
| 07/16/2002 | US6420242 Separation of thin films from transparent substrates by selective optical processing |
| 07/16/2002 | US6420199 Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks |
| 07/16/2002 | US6420198 Gallium nitride based compound semiconductor laser and method of forming the same |
| 07/16/2002 | US6420197 Improved crystalline characteristics of algain nitride; strain reducing layer between layers of different thermal expansion coefficients; blue laser |
| 07/11/2002 | WO2002054783A1 On screen display as diagnostic aid |
| 07/11/2002 | WO2002054549A1 Semiconductor luminous element and method for manufacture thereof, and semiconductor device and method for manufacture thereof |
| 07/11/2002 | WO2002054504A1 Flat panel color display with enhanced brightness and preferential viewing angles |
| 07/11/2002 | WO2002054503A1 Light emitting device |
| 07/11/2002 | WO2002054502A1 Light source comprising a light-emitting element |
| 07/11/2002 | WO2002054129A1 Coupling device for optically coupling an optical waveguide to an electro-optical element |
| 07/11/2002 | WO2002053648A1 Curing agents, curable compositions, compositions for optical materials, optical materials, their production, and liquid crystal displays and led's made by using the materials |
| 07/11/2002 | US20020089064 Flexible lead surface-mount semiconductor package |
| 07/11/2002 | US20020089047 Surface-mountable light-emitting diode structural element |
| 07/11/2002 | US20020088988 Light emitting semiconductor package |
| 07/11/2002 | US20020088987 Optical device and method for manufacturing the same, and electronic apparatus |
| 07/11/2002 | US20020088985 Semiconductor light emitting device including a fluorescent material |
| 07/11/2002 | US20020088983 Multichip module |
| 07/11/2002 | US20020088981 Optical unit incorporating light-emitting or light-receiving element coated by resin |
| 07/11/2002 | US20020088979 Semiconductor laminated substrate, semiconductor crystal substrate and semiconductor device and method of manufacturing the same |
| 07/11/2002 | DE10065381A1 Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement Radiation-emitting semiconductor component with a luminescence |
| 07/11/2002 | CA2430866A1 Curing agents, curable compositions, compositions for optical materials, optical materials, their production, and liquid crystal displays and led's made by using the materials |
| 07/10/2002 | EP1221725A1 Highly efficient paraboloid light emitting diode |
| 07/10/2002 | EP1221724A2 Sealing material with wavelength converting effect, application and production process |
| 07/10/2002 | EP1221723A2 Formation of ohmic contats in III-Nitride light emitting devices |
| 07/10/2002 | EP1221722A1 Highly efficient paraboloid light emitting diode |
| 07/10/2002 | EP1221473A1 Organic light emitting diode device with three component emitting layer |
| 07/10/2002 | CN1358335A Light-emitting thyristor matrix array |
| 07/10/2002 | CN1358334A Light-emitting element matrix array |
| 07/10/2002 | CN1358138A Method for setting quantity of light of light emitting element array |
| 07/10/2002 | CN1357929A Optical semiconductor device and its making process |
| 07/10/2002 | CN1357928A Semiconductor photoelectronic device with non-rectangular substrate and its manufacture |
| 07/09/2002 | US6417525 Semiconductor light emitter with current block region formed over the semiconductor layer and electrode connection portion for connecting the pad electrode to the translucent electrode |
| 07/09/2002 | US6417524 Light emitting semiconductor device |
| 07/09/2002 | US6417522 Led with alternated strain layer |
| 07/09/2002 | US6417520 Semiconductor device with quantum-wave interference layers |
| 07/09/2002 | US6417020 Nitride compound light emitting device and method for fabricating the same |
| 07/09/2002 | US6417019 Group ii metal gallium, aluminum, indium sulfide with europium phosphors, absorption |
| 07/09/2002 | US6417017 Optosemiconductor device and the method for its manufacture |
| 07/04/2002 | WO2002052902A2 Led luminaire with electrically adjusted color balance |
| 07/04/2002 | WO2002052656A1 Led module |
| 07/04/2002 | WO2002052655A1 Method for roughening a semiconductor chip for optoelectronics |
| 07/04/2002 | WO2002052615A2 Radiation-emitting semiconductor component with a luminescence conversion element |
| 07/04/2002 | WO2002052335A2 Variable focal length micro lens array field curvature corrector |
| 07/04/2002 | WO2002033022A3 Lanthanide complexes for phosphor applications |
| 07/04/2002 | US20020085603 Gallium nitride semiconductor light emitting device having multi-quantum-well structure active layer, and semiconductor laser light source device |
| 07/04/2002 | US20020085601 Light emitting diode with light conversion using scattering optical media |
| 07/04/2002 | US20020085390 Optical device and apparatus employing the same |
| 07/04/2002 | US20020085381 Indicator system and combined lens for use therewith |
| 07/04/2002 | US20020085379 Surface light source generator |
| 07/04/2002 | US20020085377 Passenger-cabin lighting device |
| 07/04/2002 | US20020084952 Flat panel color display with enhanced brightness and preferential viewing angles |
| 07/04/2002 | US20020084749 UV reflecting materials for LED lamps using UV-emitting diodes |
| 07/04/2002 | US20020084748 UV Reflecting materials for LED lamps using UV-emitting diodes |
| 07/04/2002 | US20020084745 Light emitting diode with light conversion by dielectric phosphor powder |
| 07/04/2002 | US20020084467 Nitride semiconductor device with reduced polarization fields |
| 07/04/2002 | US20020084466 Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys |
| 07/04/2002 | US20020084462 Light emission device |
| 07/04/2002 | US20020084455 Transparent and conductive zinc oxide film with low growth temperature |
| 07/04/2002 | US20020084452 Nitride semiconductor light emitting device and manufacturing method thereof |
| 07/04/2002 | DE10064448A1 Verfahren zum Aufrauhen eines Halbleiterchips für die Optoelektronik A method of roughening of a semiconductor chip for optoelectronics |
| 07/04/2002 | DE10063876A1 Aus einer Vielzahl von Leuchtdioden bestehende Lichtquelle For a variety of light-emitting diodes existing light source |
| 07/03/2002 | EP1220336A2 Separation method for Gallium Nitride devices on lattice-mismatch substrates |
| 07/03/2002 | EP1220335A2 Surface-light-emitting device including AlGaInP and AlGaAs multi-film reflecting layers |
| 07/03/2002 | EP1220334A2 A semiconductor light-emitting element |
| 07/03/2002 | EP1220333A2 Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device |
| 07/03/2002 | EP1220332A2 A light permeable fluorescent cover for light emitting diode |
| 07/03/2002 | EP1220331A1 Diamond ultraviolet luminescent element |
| 07/03/2002 | EP1220304A2 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device |
| 07/03/2002 | EP1219994A2 Semiconductor device, optoelectronic board, and production methods therefor |
| 07/03/2002 | EP1218987A1 Single mode vertical cavity surface emitting laser |
| 07/03/2002 | EP1218786A1 Dual-enclosure optoelectronic packages |
| 07/03/2002 | EP0808244B1 Multicolor organic light emitting devices |
| 07/03/2002 | CN2498747Y High brightness white and green light emitting diodes |
| 07/03/2002 | CN2498746Y White light emitting device |
| 07/02/2002 | US6414975 Cladding, active materials; heat treatment |
| 07/02/2002 | US6414783 Method of transferring semiconductors |
| 07/02/2002 | US6414339 Semiconductor light emitting device and method of manufacturing the same |
| 07/02/2002 | US6413839 Semiconductor device separation using a patterned laser projection |
| 07/02/2002 | US6413791 Overcoating polycrystalline semiconductors; controlling oxygen concentration |
| 07/02/2002 | US6413627 Freestanding, transparent gallium nitride; distortion-free; low concentration of arsenic and carbon-free; low cost; for use in light emitting diodes |
| 07/02/2002 | US6413312 P-type nitride iii-v, such as gallium nitride; metal organic chemical vapor deposition using an arylalkyl hydrazine nitrogen source which does not release hydrogen; high carrier concentration; no annealing; light emitting diodes; lasers |
| 06/27/2002 | WO2002051217A2 Packaged integrated circuits and methods of producing thereof |
| 06/27/2002 | WO2002050472A1 Luminaire with a reflector and leds |
| 06/27/2002 | WO2002009475A3 Improved gan light emitting diode |
| 06/27/2002 | WO2002003474A3 N-type nitride semiconductor laminate and semiconductor device using same |
| 06/27/2002 | WO2001086730A3 Optoelectronic component and method for the production thereof |
| 06/27/2002 | US20020081825 Method for reproducibly forming a predetermined quantum dot structure and device produced using same |
| 06/27/2002 | US20020081800 Electrode, semiconductor device and methods for making them |
| 06/27/2002 | US20020081773 Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor |
| 06/27/2002 | US20020081764 Layers comprising beryllium are deposited between layers of initially undoped indium phosphide (InP); beryllium diffuses from the layers comprising beryllium into the layers of initially undoped InP |
| 06/27/2002 | US20020081763 Forming a first semiconductor layer made of a group 3 nitride in contact with a second semiconductor layer made of a different group 3 nitride so the density of a p-type dopant increases near the heterojunction interface |
| 06/27/2002 | US20020081463 Aluminum-including III nitride film which is suitable for a light-emitting diode or a high speed integrated circuit chip |