Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
08/2002
08/21/2002CN2507145Y Infrared lighting tube for far infrared touch screw
08/21/2002CN1365594A Matrix structure based LED array
08/21/2002CN1365370A Polyurethane resin composition for sealing optoelectric conversion devices
08/21/2002CN1365153A Light-emitting diode
08/21/2002CN1365139A Method for removing oxide on silicon surface under low temperature and epitaxial growth
08/21/2002CN1365136A Method for producing III family nitride single/multiple layer heterogeneous strain film
08/21/2002CN1365005A Comprehensive measuring method for the optical and electric characters of semiconductor laser
08/21/2002CN1089542C Electroluminescent illumination system
08/20/2002US6437374 Semiconductor device and method of forming a semiconductor device
08/20/2002US6437372 Diffusion barrier spikes for III-V structures
08/20/2002US6437363 Semiconductor photonic device
08/20/2002US6435734 Optoelectronic module
08/15/2002WO2002063699A2 Group iii nitride led with undoped cladding layer
08/15/2002WO2002063348A2 IMPROVED LIGHT EXTRACTION EFFICIENCY OF GaN BASED LEDs
08/15/2002WO2002041364A3 Led packages having improved light extraction
08/15/2002US20020111195 Folder-type mobile communication terminal having double-sided LCD
08/15/2002US20020111044 Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts
08/15/2002US20020110951 Mass production technique for surface mount optical device with a focusing cup
08/15/2002US20020110947 Semiconductor light emitting element and its manufacturing method
08/15/2002US20020110337 Electro-optical component
08/15/2002US20020110323 Optical coupling device
08/15/2002US20020109148 Injection incoherent emitter
08/15/2002US20020109146 Nitride-based semiconductor light-emitting device
08/15/2002US20020109134 Nano-structures, process for preparing nano-structures and devices
08/15/2002US20020109109 Photo-conductive relay and method of making same
08/15/2002US20020109074 Semiconductor device, optoelectronic board, and production methods therefor
08/15/2002CA2434675A1 Group iii nitride led with undoped cladding layer
08/14/2002EP1231757A2 Folder-type mobile communication terminal having double-sided LCD
08/14/2002EP1231650A2 Semiconductor device having a reflector
08/14/2002EP1231429A1 Color illumination device
08/14/2002EP1231251A1 Thin film inorganic light emitting diode
08/14/2002EP1231250A1 Manufacturing of a thin film inorganic light emitting diode
08/14/2002EP1231249A1 Manufacturing of a thin film inorganic light emitting diode
08/14/2002EP1230686A1 Multi color solid state led/laser
08/14/2002EP0815597B1 Electroluminescent device comprising porous silicon
08/14/2002CN2505986Y Luminous diode device
08/14/2002CN1364319A Light-emitting semiconductor device and surface-emitting device
08/14/2002CN1364318A Light-emitting diode, lighting device and method of manufacturing same
08/14/2002CN1363960A Organic LED device with improved light efficiency
08/13/2002US6433365 Epitaxial wafer and light emitting diode
08/13/2002US6433364 Semiconductor light emitting device capable of increasing light emitting efficiency
08/13/2002US6432745 Two-pole SMT miniature housing for semiconductor components and method for the manufacture thereof
08/13/2002US6432521 Forming at low temperature
08/08/2002WO2002061855A1 Light emitting device
08/08/2002WO2002061847A2 Light emitting diodes including modifications for light extraction and manufacturing methods therefor
08/08/2002WO2002061836A1 High voltage semiconductor device
08/08/2002WO2002061815A1 A method of manufacturing a semiconductor structure comprising clusters and/or nanocrystals of silicon and a semiconductor structure of this kind
08/08/2002WO2002061814A2 Method of manufacturing optical devices and related improvements
08/08/2002WO2002061805A2 High power radiation emitter device and heat dissipating package for electronic components
08/08/2002WO2002061803A2 Radiation emitter devices and method of making the same
08/08/2002US20020106823 Patterned phase shift layers for wavelength-selectable vertical cavity surface-emitting laser (VCSEL) arrays
08/08/2002US20020105809 Light emitting diode and method of making the same
08/08/2002US20020105487 Light emitting diode driving circuit
08/08/2002US20020105373 LED drive circuit
08/08/2002US20020105269 Highly efficient fluorescent material
08/08/2002US20020105268 Reflector-containing semiconductor component
08/08/2002US20020105266 Light-emitting device with coated phosphor
08/08/2002US20020105013 3-5 Group compound semiconductor and light emitting device
08/08/2002US20020105004 Semiconductor light-emitting element
08/08/2002US20020105003 Light emitting diode and method of making the same
08/08/2002US20020105002 Electronic part and its manufacturing method
08/08/2002US20020105001 Optical to electrical interconnect structure
08/08/2002US20020104999 Display system and method of producing the same
08/08/2002US20020104998 Semiconductor light-emitting element
08/08/2002US20020104997 Semiconductor light emitting diode on a misoriented substrate
08/08/2002US20020104996 Semiconductor light emitting diode on a misoriented substrate
08/08/2002DE10105802A1 Reflektorbehaftetes Halbleiterbauelement Reflector-affected semiconductor device
08/08/2002DE10105800A1 Hocheffizienter Leuchtstoff Highly efficient fluorescent
08/08/2002CA2769808A1 Light emitting diodes including modifications for light extraction and manufacturing methods therefor
08/08/2002CA2435964A1 Method of manufacturing optical devices and related improvements
08/08/2002CA2433541A1 Light emitting diodes including modifications for light extraction and manufacturing methods therefor
08/07/2002EP1229764A2 Light emitting diode driving circuit
08/07/2002EP1229592A2 Optical detector and method to produce an arrangement of a plurality of semiconductor layers
08/07/2002EP1228540A1 Optoelectric element
08/07/2002EP1228539A2 Highly efficient uv-emitter based on nitride semiconductors
08/07/2002EP1228537A1 Stacked wavelength-selective opto-electronic device
08/07/2002CN1363198A Supply assembly for LED lighting module
08/07/2002CN1088934C Technology for making luminous element of optical video waveguide semiconductor
08/06/2002US6430327 Optical module and manufacturing method thereof
08/06/2002US6430207 High-power laser with transverse mode filter
08/06/2002US6429600 Light emitting display device having luminance compensating circuitry
08/06/2002US6429583 Emisison of blue light
08/06/2002US6429466 Integrated circuit substrate that accommodates lattice mismatch stress
08/06/2002US6429465 Crystal structure
08/06/2002US6429464 Light emitting diode
08/06/2002US6429463 Semiconductor device structures incorporating “buried” mirrors and/or “buried” metal electrodes and a process for their fabrication
08/06/2002US6429462 Injection incoherent emitter
08/06/2002US6429460 Highly luminous light emitting device
08/06/2002US6429111 Comprising a p-type aluminum gallium indium nitride semiconductor layer and an electrode layer formed on the semiconductor layer, wherein the electrode layer contains a mixture of a metal nitride and a metal hydride
08/06/2002US6429104 Method for forming cavities in a semiconductor substrate by implanting atoms
08/06/2002US6429102 Method of manufacturing low resistivity p-type compound semiconductor material
08/06/2002US6429032 Nitride semiconductor and a method thereof, a nitride semiconductor device and a method thereof
08/06/2002US6428189 L.E.D. thermal management
08/01/2002WO2002059983A1 Led package having improved light extraction and methods therefor
08/01/2002WO2002059982A1 Light emitting diode, optical semiconductor elemet and epoxy resin composition suitable for optical semiconductor element and production methods therefor
08/01/2002WO2002058934A1 Driving ic and optical print head
08/01/2002WO2002045183A3 Substrate with semiconductor layer, electronic component, electronic circuit, printable composition and method for production thereof
08/01/2002WO2001091451A3 Amorphous aluminum nitride emitter
08/01/2002WO2001005001A9 Resonant microcavities
08/01/2002US20020102819 Manufacturing method of compound semiconductor wafer
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