| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 10/10/2002 | US20020145205 Light-emitting diode |
| 10/10/2002 | US20020145152 Light emitting device |
| 10/10/2002 | US20020145151 Semiconductor light emitting device and method of manufacturing the same |
| 10/10/2002 | US20020145150 Semiconductor light emitting device, display unit, method of fabricating semiconductor light emitting device, and method of fabricating semiconductor laser |
| 10/10/2002 | US20020145149 Optical device having current blocking layer of buried ridge structure and fabrication method thereof |
| 10/10/2002 | US20020145148 Semiconductor light emitting device and fabrication method thereof |
| 10/10/2002 | US20020145147 Light emitting diode and manufacturing method thereof |
| 10/10/2002 | US20020145146 LED of AlGaInP system and epitaxial wafer used for same |
| 10/10/2002 | US20020144645 Method of producing device quality (Al)InGaP alloys on lattice-mismatched substrates |
| 10/10/2002 | DE10213701A1 Light emitting device comprises an inverted aluminum indium gallium nitride arrangement with a hetero-junction having an emission layer arranged between an n-conducting layer and a p-conducting layer, and electrodes |
| 10/10/2002 | DE10213611A1 Ausbildung eines optischen Elements auf der Oberfläche einer Licht emittierenden Anordnung zur verbesserten Lichtextraktion Forming an optical element on the surface of a light emitting device for improved light extraction |
| 10/10/2002 | DE10213395A1 Light emitting group III-nitride arrangement comprises substrate, an n-region lying on substrate, an active region lying over the n-region, smooth layer containing indium arranged between the substrate and active region, and spacer layer |
| 10/10/2002 | DE10213358A1 Light emitting III-nitride arrangement used as light emitting diode comprises a substrate, an n-region lying on substrate, an active region lying on n-region, and a smooth region containing indium between substrate and active region |
| 10/10/2002 | DE10115440A1 Optoelektronische Koppelvorrichtung und Herstellungsverfahren Optoelectronic coupling device and manufacturing method |
| 10/10/2002 | CA2442985A1 Methods of fabricating nanostructures and nanowires and devices fabricated therefrom |
| 10/09/2002 | EP1248304A2 Phosphor converted light emitting diode |
| 10/09/2002 | EP1248303A1 Light-emitting device |
| 10/09/2002 | EP0573549B2 Method of fabricating visible light emitting diodes from soluble semiconducting polymers |
| 10/09/2002 | CN1373908A Long-lifetime polymer light-emitting devices with improved luminous efficiency and radiance |
| 10/09/2002 | CN1373907A Light-emitting or light-receiving semiconductor device and method for fabricating same |
| 10/09/2002 | CN1373906A Light-emitting or light-detecting semicondctor module and method of manufacture therefor |
| 10/09/2002 | CN1373523A High-brightness nitride LED generating white light and its preparing process |
| 10/09/2002 | CN1373522A LED with substrate coated with metallic reflection film and its preparing process |
| 10/09/2002 | CN1373521A Luminous element with blue light generating unit and covering part containing zinc selenide |
| 10/09/2002 | CN1092404C Method for producing high-efficiency LED |
| 10/09/2002 | CN1092396C Method for passivation of organic LED |
| 10/08/2002 | US6462879 Optical writing device and image forming apparatus and method using the same |
| 10/08/2002 | US6462358 Light emitting diode and method for manufacturing the same |
| 10/08/2002 | US6462357 Epitaxial growth of nitride compound semiconductor |
| 10/08/2002 | US6462355 Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates |
| 10/08/2002 | US6462354 Semiconductor device and semiconductor light emitting device |
| 10/08/2002 | US6461883 Method for manufacturing led array head and led array head prepared by using the same |
| 10/03/2002 | WO2002078069A1 Nitride semiconductor element and production method thereof |
| 10/03/2002 | WO2002078055A2 Light extractor apparatus |
| 10/03/2002 | WO2002077689A1 Light emitting diode, method for production and use thereof |
| 10/03/2002 | WO2002061803A3 Radiation emitter devices and method of making the same |
| 10/03/2002 | WO2001069300A3 High efficiency non-imaging optics |
| 10/03/2002 | US20020142506 Surface emission type semiconductor light-emitting device and method of manufacturing the same |
| 10/03/2002 | US20020141197 Heat dissipation system for high power LED lighting system |
| 10/03/2002 | US20020141006 Forming an optical element on the surface of a light emitting device for improved light extraction |
| 10/03/2002 | US20020140378 Current source methods and apparatus for light emitting diodes |
| 10/03/2002 | US20020140343 Method for manufacturing display device, display device, and electronic apparatus |
| 10/03/2002 | US20020140080 Two-pole SMT miniature housing for semiconductor components and method for the manufacture thereof |
| 10/03/2002 | US20020140012 Semiconductor structures and devices for detecting far-infrared light and methods for fabricating same |
| 10/03/2002 | US20020139990 Light emitting diode and manufacturing method thereof |
| 10/03/2002 | US20020139987 Monolithic series/parallel led arrays formed on highly resistive substrates |
| 10/03/2002 | US20020139984 Semiconductor light emitting element |
| 10/03/2002 | US20020139968 Semiconductor light emitting element and method for producing the same |
| 10/02/2002 | EP1246266A2 Light emission apparatus and method of fabricating the same |
| 10/02/2002 | EP1246265A2 Light emitting device |
| 10/02/2002 | EP1246264A2 Nitride semiconductor device |
| 10/02/2002 | EP1246263A2 Light-emitting element |
| 10/02/2002 | EP1246262A2 Light-emitting element |
| 10/02/2002 | EP1246260A2 Optoelectronic coupling device and method of fabrication |
| 10/02/2002 | EP1245702A2 Process for producing a gallium nitride crystal substrate |
| 10/02/2002 | DE10112542A1 Strahlungsemittierendes optisches Bauelement The radiation-optical device |
| 10/02/2002 | CN2514495Y Improved base for LED |
| 10/02/2002 | CN1372332A Led |
| 10/02/2002 | CN1372330A LED using scattered light media to make light conversion |
| 10/02/2002 | CN1372329A LED component with high transmission rate |
| 10/02/2002 | CN1372328A LED with optical reflection film |
| 10/02/2002 | CN1372307A Activation method for reducing p type film resistance by laser |
| 10/02/2002 | CN1372306A Method for activating hihg-resistance P type film into low-resistance P type film |
| 10/02/2002 | CN1372305A Method for activating high-resistance P type doping film into low-resistance P type doping film |
| 10/02/2002 | CN1372304A Activation method for reducing P type doping film resistance by plasma |
| 10/02/2002 | CN1091949C Integrated electro-optic package |
| 10/01/2002 | US6459713 Conductive element with lateral oxidation barrier |
| 10/01/2002 | US6459712 Semiconductor devices |
| 10/01/2002 | US6459130 Optoelectronic semiconductor component |
| 10/01/2002 | US6459100 Vertical geometry ingan LED |
| 10/01/2002 | US6459098 Window for light emitting diode |
| 10/01/2002 | US6458673 Transparent and conductive zinc oxide film with low growth temperature |
| 10/01/2002 | US6458614 Opto-electronic integrated circuit |
| 10/01/2002 | US6458612 Method of fabricating high efficiency light-emitting diode with a transparent substrate |
| 09/26/2002 | WO2002075878A1 A method and apparatus for improving efficiency in opto-electronic radiation source devices |
| 09/26/2002 | WO2002075821A1 Semiconductor light-emitting device |
| 09/26/2002 | WO2002075820A1 Electroluminescent devices |
| 09/26/2002 | WO2002075819A2 Radiation-emitting optical component |
| 09/26/2002 | WO2002063699A3 Group iii nitride led with undoped cladding layer |
| 09/26/2002 | WO2002033312A3 A light-emitting assembly |
| 09/26/2002 | WO2001067427A3 Led light source with field-of-view-controlling optics |
| 09/26/2002 | US20020137342 Method of manufacturing nitride semiconductor substrate |
| 09/26/2002 | US20020137249 Semiconductor device and semiconductor substrate, and method for fabricating the same |
| 09/26/2002 | US20020137248 Manufacturing method of semiconductor film |
| 09/26/2002 | US20020137244 Method for forming a semiconductor device having a metal substrate |
| 09/26/2002 | US20020137243 Method for forming a semiconductor device having a metallic substrate |
| 09/26/2002 | US20020136932 GaN-based light emitting device |
| 09/26/2002 | US20020136025 Light source arrangement |
| 09/26/2002 | US20020135665 Led print head for electrophotographic printer |
| 09/26/2002 | US20020135547 Self-emission display device and method for driving the same |
| 09/26/2002 | US20020135298 Light extractor apparatus |
| 09/26/2002 | US20020134989 Semiconductor light-emitting element |
| 09/26/2002 | US20020134988 A chip-type light-emitting device with case |
| 09/26/2002 | US20020134987 Resonant-cavity light-emitting diode and optical transmission module using the light-emitting diode |
| 09/26/2002 | US20020134986 Semiconductor light-emitting device |
| 09/26/2002 | US20020134985 Interface texturing for light-emitting device |
| 09/25/2002 | EP1244152A2 Reflective light emitting diode, reflective optical device and its manufacturing method |
| 09/25/2002 | EP1244141A1 Manufacturing method of a nitride semiconductor device |
| 09/25/2002 | EP1244140A2 Method of manufacturing nitride semiconductor substrate |
| 09/25/2002 | EP1244139A2 Manufacturing method of semiconductor film |