| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 12/18/2002 | EP1267393A2 Group III nitride semiconductor substrate for epitaxial lateral overgrowth (ELO) |
| 12/18/2002 | EP1266411A2 High efficiency light emitters with reduced polarization-induced charges |
| 12/18/2002 | EP1266342A1 Scanner utilizing light pipe with diffuser |
| 12/18/2002 | EP1266255A2 High efficiency non-imaging optics |
| 12/18/2002 | CN2526981Y High-efficient LED |
| 12/18/2002 | CN1386306A White light emitting phosphor blend for LCD devices |
| 12/18/2002 | CN1386179A 图象显示装置 Image display means |
| 12/18/2002 | CN1386124A Method of preparing a polymer, method of preparing a compound, compounds, polymers, and method for manufacturing and electronic device |
| 12/18/2002 | CN1096821C Ultraviolet electroluminescent element and laser luminescent element |
| 12/18/2002 | CN1096493C Powder porasil and its hydrothermal preparation method |
| 12/17/2002 | US6496162 Light emitting diode display unit |
| 12/17/2002 | US6495964 LED luminaire with electrically adjusted color balance using photodetector |
| 12/17/2002 | US6495894 Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate |
| 12/17/2002 | US6495867 InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire |
| 12/17/2002 | US6495862 Nitride semiconductor LED with embossed lead-out surface |
| 12/17/2002 | US6495861 Light-emitting semiconductor chip |
| 12/17/2002 | US6495860 Light emitting diode and manufacturing process thereof with blank |
| 12/17/2002 | US6495859 Opto-electronic component made from II-VI semiconductor material |
| 12/17/2002 | US6495433 Method of activating compound semiconductor layer to p-type compound semiconductor layer |
| 12/17/2002 | US6495273 Excellent in the ability of electron injection and transportation; reaction of fluorinated tetraphenyl di-dialkoxyphosphine or diphosphonium derivatives with aromatic dialdehydes |
| 12/17/2002 | US6495198 Method for fabricating an organic light emitting diode |
| 12/17/2002 | US6494597 Bowl on lead frame in light emitting diode |
| 12/12/2002 | WO2002099902A1 Broad-spectrum terbium-containing garnet phosphors and white-light sources incorporating the same |
| 12/12/2002 | WO2002099901A1 Method for manufacturing group-iii nitride compound semiconductor device |
| 12/12/2002 | WO2002099900A1 Light emitting element |
| 12/12/2002 | WO2002099880A1 Semiconductor device |
| 12/12/2002 | WO2002098981A1 Epoxy molding compounds containing phosphor and process for preparing such compositions |
| 12/12/2002 | WO2002073705A3 Radiation-emitting semiconductor component and method for producing the same |
| 12/12/2002 | WO2002071104A3 Image display generator for a head-up display |
| 12/12/2002 | WO2002058163A3 Method for producing semiconductor components |
| 12/12/2002 | WO2002056435A9 Nitride semiconductor laser element and optical device containing it |
| 12/12/2002 | US20020187571 Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor structure |
| 12/12/2002 | US20020187570 Method for manufacturing light emitting diode devices |
| 12/12/2002 | US20020187568 Forming semiconductor structures including acticated acceptors in buried p-type gan layers |
| 12/12/2002 | US20020187356 Reducing stresses; noncracking; semiconductor |
| 12/12/2002 | US20020186735 Conductive element with lateral oxidation barrier |
| 12/12/2002 | US20020185968 Light source device |
| 12/12/2002 | US20020185966 Mounting led on each of plurality of divisions of substrate aggregation, forming transparent layer, cutting off at division lines, forming second transparent layer, cutting off, forming reflector film on outside walls, dividing at lines |
| 12/12/2002 | US20020185965 Phosphor-converted light emitting device |
| 12/12/2002 | US20020185732 Ohmic contact to semiconductor devices and method of manufacturing the same |
| 12/12/2002 | US20020185660 Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device |
| 12/12/2002 | US20020185653 Semiconductor light-emitting device |
| 12/12/2002 | US20020185651 Light-emitting diode (LED) package and packaging method for shaping the external light intensity distribution |
| 12/12/2002 | US20020185649 Light emitting device |
| 12/12/2002 | US20020185648 Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof |
| 12/12/2002 | US20020185647 Semiconductor element and method for producing the same |
| 12/12/2002 | US20020185646 Light emitting diode |
| 12/12/2002 | US20020185054 High surface quality gan wafer and method of fabricating same |
| 12/12/2002 | DE10224974A1 Semiconductor used in a light emitting diode has a boundary layer of two layers with a lattice vacancy matching, an intermediate layer, and a single quantum well structure |
| 12/11/2002 | EP1265272A1 Group iii nitride compound semiconductor and method for manufacturing the same |
| 12/11/2002 | EP1264354A2 Semiconductor nanocrystalline materials and their uses |
| 12/11/2002 | EP1264353A2 Lighting apparatus having quantum dot layer |
| 12/11/2002 | EP1264298A2 Led light source with field-of-view-controlling optics |
| 12/11/2002 | EP1264011A1 Iii-v nitride substrate boule and method of making and using the same |
| 12/11/2002 | EP1155170B1 Method for producing nitride monocrystals |
| 12/11/2002 | CN2525682Y Diode having single face bare electrode |
| 12/11/2002 | CN2525351Y Serial type lamp |
| 12/11/2002 | CN1384981A Semiconductor light-emitting device |
| 12/11/2002 | CN1384553A Semiconductor element and its manufacture |
| 12/11/2002 | CN1384378A Optical element and optical transceiver and other optical equipment with the optical element |
| 12/11/2002 | CN1096120C Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
| 12/10/2002 | US6493373 Vertical cavity apparatus with tunnel junction |
| 12/10/2002 | US6493372 Vertical cavity apparatus with tunnel junction |
| 12/10/2002 | US6493371 Vertical cavity apparatus with tunnel junction |
| 12/10/2002 | US6492725 Concentrically leaded power semiconductor device package |
| 12/10/2002 | US6492661 Light emitting semiconductor device having reflection layer structure |
| 12/10/2002 | US6492660 Semiconductor light emitting device |
| 12/10/2002 | US6492193 Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure |
| 12/10/2002 | US6492191 Method for manufacturing an A1xGayInzN film using a metal film for heat radiation |
| 12/10/2002 | US6491443 Sleeve for optical connector and receptacle |
| 12/10/2002 | CA2197916C Optical transmitter and transceiver module for wireless data transmission |
| 12/05/2002 | WO2002097904A2 Group iii nitride based light emitting diode structures with a quantum well and superlattice |
| 12/05/2002 | WO2002097903A1 Short wavelength zno light emitting device and the manufacturing method thereof |
| 12/05/2002 | WO2002097902A1 Semiconductor led device |
| 12/05/2002 | WO2002097901A1 Highly efficient luminescent substance |
| 12/05/2002 | WO2002097894A1 High efficiency silicon light emitting device and modulator |
| 12/05/2002 | WO2002097884A1 High power led module for spot illumination |
| 12/05/2002 | WO2002097861A2 Semiconductor device, semiconductor layer and production method thereof |
| 12/05/2002 | WO2002097770A2 Illuminated signage employing light emitting diodes |
| 12/05/2002 | WO2002056365A3 Method for subdividing wafers into chips |
| 12/05/2002 | US20020182779 Heat sink method and system |
| 12/05/2002 | US20020182765 Quantum well structures and methods of making the same |
| 12/05/2002 | US20020180861 Rod lens array and printer head and optical printer using the same |
| 12/05/2002 | US20020180370 Light-emitting element matrix array |
| 12/05/2002 | US20020180351 UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same |
| 12/05/2002 | US20020180338 Process for the preparation of pink light-emitting diode with high brightness |
| 12/05/2002 | US20020179923 Light emitting device |
| 12/05/2002 | US20020179921 Compliant hermetic package |
| 12/05/2002 | US20020179920 Package base which allows mounting of a semiconductor element and electrode-wiring terminals on a mounting surface |
| 12/05/2002 | US20020179919 Process for the production of an optoelectronic semiconductor component |
| 12/05/2002 | US20020179918 Light emitting diode having an insulating substrate |
| 12/05/2002 | US20020179917 High-voltage hybrid circuit |
| 12/05/2002 | US20020179915 Wavelength-tunable light emitting device |
| 12/05/2002 | US20020179911 Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates |
| 12/05/2002 | US20020179910 Low temperature formation of backside ohmic contacts for vertical devices |
| 12/05/2002 | US20020179005 Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor |
| 12/05/2002 | DE10202742A1 Verfahren zur Herstellung einer rosafarbenes Licht emittierenden Diode mit hoher Helligkeit A method for producing a rose light emitting diode with high brightness |
| 12/05/2002 | DE10125343A1 Beleuchtungsvorrichtung Lighting device |
| 12/05/2002 | DE10125341A1 Beleuchtungsvorrichtung Lighting device |
| 12/05/2002 | DE10122134A1 Optical sensor has region of LED chip facing lens with central light region and surrounding contact field connected by bonded wire to conducting track of circuit board |