Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2009
07/09/2009US20090174005 Semiconductor device with gate-undercutting recessed region
07/09/2009US20090174000 Semiconductor device including insulated-gate field-effect transistor
07/09/2009US20090173999 Field effect transistor with gate having varying sheet resistance
07/09/2009US20090173998 Semiconductor device and manufacturing method thereof
07/09/2009US20090173997 Mosfet and method for manufacturing mosfet
07/09/2009US20090173996 Recess Gate Type Transistor
07/09/2009US20090173995 Trench semiconductor device of improved voltage strength, and method of fabrication
07/09/2009US20090173994 Recess gate transistor
07/09/2009US20090173993 Structure and Method of Forming a Topside Contact to a Backside Terminal of a Semiconductor Device
07/09/2009US20090173992 Semiconductor device with improved performance characteristics
07/09/2009US20090173991 Methods for forming rhodium-based charge traps and apparatus including rhodium-based charge traps
07/09/2009US20090173990 Structures for and method of silicide formation on memory array and peripheral logic devices
07/09/2009US20090173989 Nonvolatile semiconductor memory
07/09/2009US20090173988 Flash memory device and method of fabricating the same
07/09/2009US20090173987 Flash memory device with isolation structure
07/09/2009US20090173986 Semiconductor Devices Including Gate Structures and Leakage Barrier Oxides
07/09/2009US20090173985 Dense arrays and charge storage devices
07/09/2009US20090173984 Integrated circuit and method of manufacturing an integrated circuit
07/09/2009US20090173983 Semiconductor device and method of fabricating the same
07/09/2009US20090173981 Nonvolatile semiconductor storage device and method of manufacturing the same
07/09/2009US20090173979 ALD OF AMORPHOUS LANTHANIDE DOPED TiOX FILMS
07/09/2009US20090173978 Semiconductor memory cell and semiconductor memory array using the same
07/09/2009US20090173977 Method of MRAM fabrication with zero electrical shorting
07/09/2009US20090173973 Semiconductor device and method of manufacturing the same
07/09/2009US20090173970 Method of fabricating hetero-junction bipolar transistor (hbt) and structure thereof
07/09/2009US20090173969 Semiconductor Device
07/09/2009US20090173968 Field Effect Transistor
07/09/2009US20090173967 Strained-channel fet comprising twist-bonded semiconductor layer
07/09/2009US20090173951 COMPOUND SEMICONDUCTOR DEVICE USING SiC SUBSTRATE AND ITS MANUFACTURE
07/09/2009US20090173950 Controlling diamond film surfaces and layering
07/09/2009US20090173949 Silicon carbide mos field effect transistor with built-in schottky diode and method for manufacturing such transistor
07/09/2009US20090173948 Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon
07/09/2009US20090173947 Display substrate and display panel having the same
07/09/2009US20090173946 Pixel structure and active device array substrate
07/09/2009US20090173945 Method for forming conductive film, thin-film transistor, panel with thin-film transistor, and method for manufacturing thin-film transistor
07/09/2009US20090173944 Thin film transistor, active device array substrate and liquid crystal display panel
07/09/2009US20090173941 Method for fabricating a semiconductor structures and structures thereof
07/09/2009US20090173939 Hybrid Wafers
07/09/2009US20090173938 Metal oxide semiconductor, semiconductor element, thin film transistor and method of manufacturing thereof
07/09/2009US20090173935 PREPARATION OF THIN FILM TRANSISTORS (TFT's) OR RADIO FREQUENCY IDENTIFICATION (RFID) TAGS OR OTHER PRINTABLE ELECTRONICS USING INK-JET PRINTER AND CARBON NANOTUBE INKS
07/09/2009US20090173934 Nonvolatile memory and three-state FETs using cladded quantum dot gate structure
07/09/2009US20090173933 Thermal Sensor with a Silicon/Germanium Superlattice Structure
07/09/2009US20090173932 Thermoelectric Material, Infrared Sensor and Image Forming Device
07/09/2009US20090173931 Methods of Making, Positioning and Orienting Nanostructures, Nanostructure Arrays and Nanostructure Devices
07/09/2009US20090173927 Storage node, phase change memory device and methods of manufacturing and operating the same
07/09/2009DE19900169B4 Verfahren zur Herstellung eines vertikalen Siliciumcarbid-Feldeffekttransistors A method for producing a vertical silicon carbide field effect transistor
07/09/2009DE112006003964T5 Anordnung von halbleitenden Nanodrähten auf Metallelektroden Arrangement of semiconducting nanowires on metal electrodes
07/09/2009DE10343132B4 Isolierte MOS-Transistoren mit ausgedehntem Drain-Gebiet für erhöhte Spannungen Isolated MOS transistors with extended drain region for increased tensions
07/09/2009DE102008062921A1 Leistungshalbleiter mit einer leicht dotierten Drift- und Pufferschicht Power semiconductor with a lightly doped drift and buffer layer
07/09/2009DE102008060704A1 Zusammengesetzter Passivierungsprozess für Nitrid-Feldeffekttransistoren A composite nitride passivation process for field effect transistors
07/09/2009DE102008055153A1 Halbleitervorrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation
07/09/2009DE102008054927A1 Halbleitergerät und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
07/09/2009DE102005039804B4 Laterales Halbleiterbauelement mit Driftstrecke und Potentialverteilungsstruktur, Verwendung des Halbleiterbauelements sowie Verfahren zur Herstellung desselben Thereof Lateral semiconductor component with the drift path and potential distribution structure, use of the semiconductor device and methods for preparing
07/08/2009EP2077590A1 Field-effect transistor
07/08/2009EP2076926A2 High breakdown voltage diode and method of forming same
07/08/2009EP2076919A1 Local collector implant structure for heterojunction bipolar transistors and method of forming the same
07/08/2009EP2006931A9 Organic thin film transistor and organic thin film light-emitting transistor
07/08/2009EP1953826A4 Semiconductor device
07/08/2009EP1784868B1 Lateral field effect transistor and its fabrication comprisng a spacer layer above and below the channel layer
07/08/2009EP1759416A4 Ldmos transistor
07/08/2009EP1756949A4 Semiconductor device and method of forming the same
07/08/2009EP1690286A4 Field effect transistor with enhanced insulator structure
07/08/2009EP1356506B1 Method of manufacturing trench gate semiconductor devices
07/08/2009EP1238433B1 Semiconductor circuit arrangement and a method for producing same
07/08/2009EP0890184B1 A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER OF SiC
07/08/2009CN101479852A Capacitorless one-transistor floating-body dram cell and method of forming the same
07/08/2009CN101479851A Lateral trench gate fet with direct source-drain current path
07/08/2009CN101478006A Terahertz GaN Gunn diode based on conducting type SiC substrate and manufacturing process thereof
07/08/2009CN101478005A Metal oxide thin-film transistor and manufacturing process thereof
07/08/2009CN101478004A Thin film transistor and semiconductor device
07/08/2009CN101478003A Single electron transistor based on ordered mesoporous and preparation thereof
07/08/2009CN101478002A Thyristor controlled by accumulation layer
07/08/2009CN101478001A Collecting electrode IGBT having hole injection structure
07/08/2009CN101478000A Improved sawtooth electric field drift region structure for power semiconductor devices
07/08/2009CN101477999A SOI voltage resistant structure having interface charge island for power device
07/08/2009CN100512583C Organic electroluminescence device and method of manufacturing the same
07/08/2009CN100512370C Ternary pulse generation circuit
07/08/2009CN100511932C Power semiconductor device
07/08/2009CN100511755C Organic light-emitting display and manufacturing method thereof
07/08/2009CN100511748C Hall component
07/08/2009CN100511743C Method for producing a device for direct thermoelectric energy conversion
07/08/2009CN100511720C Heterojunction field effect transistors using silicon-germanium and silicon-carbon alloys
07/08/2009CN100511716C Lead contact structure for abnormal magnetoresistance component
07/08/2009CN100511715C Dual-gate, non-volatile memory cells, arrays thereof, methods of manufacturing the same and methods of operating the same
07/08/2009CN100511714C Method for preparing non-volatile floating bar memory based on germanium and silicon heterogeneous nano structure
07/08/2009CN100511713C Thin film transistor and method of fabricating the same
07/08/2009CN100511712C Thin film transistor, semiconductor device, and method for manufacturing the same
07/08/2009CN100511711C Polysilicon thin film transistor and mfg. method thereof
07/08/2009CN100511710C Polycrystalline silicon layer of thin film transistor and display thereof
07/08/2009CN100511709C Semiconductor device and method for manufacturing the same
07/08/2009CN100511708C Semiconductor device and method of fabricating semiconductor device
07/08/2009CN100511707C Semiconductor device and making method and liquid spraying apparatus thereof
07/08/2009CN100511706C GaN device based on component-gradient GaN MISFET and preparing method thereof
07/08/2009CN100511705C Semiconductor device with T-shape grid electrode and producing method thereof
07/08/2009CN100511704C Semiconductor substrate, semiconductor device and method for manufacturing the same
07/08/2009CN100511698C Organic electroluminescence device and mfg. method thereof
07/08/2009CN100511686C Semiconductor apparatus and fabrication method of the same
07/08/2009CN100511636C Method for manufacturing a structure comprising film of strain semiconductor material
07/08/2009CN100511624C Device package and methods for the fabrication and testing thereof
07/08/2009CN100511594C Hafnium-aluminum oxide dielectric films