Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2009
07/30/2009US20090191672 Method for production of thin-film semiconductor device
07/30/2009US20090191671 Semiconductor substrate, semiconductor device, and manufacturing methods for them
07/30/2009US20090190264 Magnetoresistive element and method of manufacturing the same
07/30/2009US20090190083 Plane switching mode liquid crystal display device having improved contrast ratio
07/30/2009US20090190056 Electro-optical device and method for driving the same
07/30/2009US20090190055 Liquid crystal display device and method for making the same
07/30/2009US20090189745 Semiconductor device, method of manufacturing thereof, signal transmission/reception method using such semiconductor device, and tester apparatus
07/30/2009US20090189461 Integrated circuit including a power mos transistor
07/30/2009US20090189257 Mesa type semiconductor device and manufacturing method thereof
07/30/2009US20090189255 Wafer having heat dissipation structure and method of fabricating the same
07/30/2009US20090189254 Circuit connection structure, method for producing the same and semiconductor substrate for circuit connection structure
07/30/2009US20090189253 Method of producing a nitride semiconductor device and nitride semiconductor device
07/30/2009US20090189252 III-V MOSFET Fabrication and Device
07/30/2009US20090189251 Capacitor formation for a pumping circuit
07/30/2009US20090189250 Semiconductor Device and a Method of Manufacturing the Same
07/30/2009US20090189249 Semiconductor device and manufacturing method thereof
07/30/2009US20090189247 Semiconductor device
07/30/2009US20090189243 Semiconductor device with trench isolation structure and method for fabricating the same
07/30/2009US20090189242 Method for non-selective shallow trench isolation reactive ion etch for patterning hybrid-oriented devices compatible with high-performance highly-integrated logic devices
07/30/2009US20090189239 Thermoelectric Module
07/30/2009US20090189230 Method and system for packaging mems devices with incorporated getter
07/30/2009US20090189229 Semiconductor devices and methods of fabricating the same
07/30/2009US20090189228 Semiconductor transistor with p type re-grown channel layer
07/30/2009US20090189226 Electrical fuse circuit
07/30/2009US20090189221 Semiconductor device and method for manufacturing semiconductor device
07/30/2009US20090189219 Semiconductor device and manufacturing method of the same
07/30/2009US20090189218 Structure and Method for Forming Power Devices with High Aspect Ratio Contact Openings
07/30/2009US20090189217 Semiconductor Memory Devices Including a Vertical Channel Transistor
07/30/2009US20090189216 Semiconductor component including a drift zone and a drift control zone
07/30/2009US20090189215 Nonvolatile flash memory device and method for producing the same
07/30/2009US20090189214 Semiconductor device and fabrication method for the same
07/30/2009US20090189213 Nonvolatile semiconductor memory device and method of fabricating the same
07/30/2009US20090189212 Electronic device having a doped region with a group 13 atom
07/30/2009US20090189211 Non-Volatile Memory Arrays Having Dual Control Gate Cell Structures And A Thick Control Gate Dielectric And Methods Of Forming
07/30/2009US20090189210 Semiconductor Flash Memory Device and Method of Fabricating the Same
07/30/2009US20090189209 Semiconductor memory device
07/30/2009US20090189205 Semiconductor device and method for manufacturing the same
07/30/2009US20090189204 Silicon thin film transistors, systems, and methods of making same
07/30/2009US20090189203 Semiconductor device and method of manufacturing the same
07/30/2009US20090189202 Electronic device including a gate electrode having portions with different conductivity types and a process of forming the same
07/30/2009US20090189201 Inward dielectric spacers for replacement gate integration scheme
07/30/2009US20090189200 Semiconductor device and fabrication method of the semiconductor device
07/30/2009US20090189199 Semiconductor device and manufacturing method thereof
07/30/2009US20090189198 Structures of sram bit cells
07/30/2009US20090189192 DEPOSITION OF GROUP III-NITRIDES ON Ge
07/30/2009US20090189191 Semiconductor device
07/30/2009US20090189190 High Electron Mobility Transistor, Field-Effect Transistor, Epitaxial Substrate, Method of Manufacturing Epitaxial Substrate, and Method of Manufacturing Group III Nitride Transistor
07/30/2009US20090189189 Semiconductor device and manufacturing method thereof
07/30/2009US20090189188 Semiconductor device and fabrication method of the semiconductor device
07/30/2009US20090189187 Active area shaping for Ill-nitride device and process for its manufacture
07/30/2009US20090189186 Group III Nitride Semiconductor Device and Epitaxial Substrate
07/30/2009US20090189185 Epitaxial growth of relaxed silicon germanium layers
07/30/2009US20090189184 Semiconductor-On-Diamond Devices and Associated Methods
07/30/2009US20090189183 Dual triggered silicon controlled rectifier
07/30/2009US20090189181 Semiconductor device having insulated gate semiconductor element, and insulated gate bipolar transistor
07/30/2009US20090189173 Semiconductor device and method of manufacturing thereof
07/30/2009US20090189164 Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon
07/30/2009US20090189163 Thin film transistor array substrate
07/30/2009US20090189160 Thin film transistor, method of fabricating the same, and organic light emitting diode display device having the tft
07/30/2009US20090189159 Gettering layer on substrate
07/30/2009US20090189156 Semiconductor device and manufacturing method thereof
07/30/2009US20090189155 Semiconductor device and manufacturing method thereof
07/30/2009US20090189154 ZnO NANOSTRUCTURE-BASED LIGHT EMITTING DEVICE
07/30/2009US20090189153 Field-effect transistor
07/30/2009US20090189152 Ferroelectric memory device
07/30/2009US20090189148 Transistor element, display device and these manufacturing methods
07/30/2009US20090189147 Organic transistor comprising a self-aligning gate electrode, and method for the production thereof
07/30/2009US20090189146 Multifinger Carbon Nanotube Field-Effect Transistor
07/30/2009US20090189144 Device For Absorbing Or Emitting Light And Methods Of Making The Same
07/30/2009US20090189143 Nanotube array electronic and opto-electronic devices
07/30/2009US20090189136 Semiconductor device and a manufacturing method of the semiconductor device
07/30/2009US20090189060 Photoelectric conversion apparatus and image pickup system using photoelectric conversion apparatus
07/30/2009DE112007001951T5 Vorrichtung und Verfahren zur Herstellung eines rauscharmen Sperrschicht-Feldeffekttransistors Apparatus and method for producing a low noise junction field effect transistor
07/30/2009DE10392870B4 Semiconductor production comprises forming gate insulating film on semiconductor region, forming gate electrode on insulating film and forming electrode in semiconductor region
07/30/2009DE10309400B4 Halbleiterbauelement mit erhöhter Spannungsfestigkeit und/oder verringertem Einschaltwiderstand Semiconductor component with increased dielectric strength and / or reduced on-resistance
07/30/2009DE102005028837B4 Feldeffekttransistor und Verfahren zur Herstellung eines Feldeffekttransistors Field effect transistor and method of manufacturing a field effect transistor
07/30/2009DE102005014722B4 Verfahren zur Herstellung einer Halbleitervorrichtung A process for producing a semiconductor device
07/30/2009DE102004063149B4 Verfahren zur Herstellung eines Halbleiter-Bauelements A process for producing a semiconductor device
07/29/2009EP2083458A1 Organic mesomeric compounds as dotands
07/29/2009EP2083457A1 Organic thin film transistor and organic thin film light-emitting transistor
07/29/2009EP2083456A1 Organic thin film transistor and organic thin film light-emitting transistor
07/29/2009EP2083449A2 Device for Controlling Electrical Conduction Across a Semiconductor Body
07/29/2009EP2083448A1 Silicon carbide semiconductor device and process for producing the same
07/29/2009EP2083440A2 Thin film transistor and method of fabricating a thin film transistor
07/29/2009EP2082432A2 Power switching semiconductor devices including rectifying junction-shunts
07/29/2009EP2082431A1 Boron aluminum nitride diamond heterostructure
07/29/2009EP2082430A1 Nano-yag:ce phosphor compositions and their methods of preparation
07/29/2009EP2082425A1 Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same
07/29/2009EP2082419A2 Systems and methods for nanowire growth
07/29/2009EP1987520A4 Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same
07/29/2009EP1810320B1 Method of forming a relaxed SiGe layer
07/29/2009EP1572897B1 Ordered biological nanostructures formed from chaperonin polypeptides
07/29/2009EP1271653B1 Semiconductor device comprising an insulated gate bipolar transistor and a free-wheel diode
07/29/2009EP0931336B1 A method for producing a silicon carbide bipolar device and a silicon carbide bipolar device
07/29/2009CN201282145Y Novel high voltage diode
07/29/2009CN101496177A Method of manufacturing a semiconductor device and a device manufactured by the method
07/29/2009CN101496176A Structure and method to optimize strain in CMOSFET
07/29/2009CN101496175A Silicon carbide semiconductor device and method for manufacturing the same
07/29/2009CN101494242A Thin film transistor and method of fabricating a thin film transistor
07/29/2009CN101494241A Metal oxide semiconductor (mos) transistors with increased break down voltages and methods of making the same