| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 06/11/2009 | US20090146306 Semiconductor device with epitaxial C49-titanium silicide (TiSi2) layer and method for fabricating the same |
| 06/11/2009 | US20090146266 Memory device and method of fabricating the same |
| 06/11/2009 | US20090146264 Thin film transistor on soda lime glass with barrier layer |
| 06/11/2009 | US20090146263 Structure and method to increase effective mosfet width |
| 06/11/2009 | US20090146262 Integrated circuit system employing selective epitaxial growth technology |
| 06/11/2009 | US20090146258 SELF-ALIGNED VERTICAL PNP TRANSISTOR FOR HIGH PERFORMANCE SiGe CBiCMOS PROCESS |
| 06/11/2009 | US20090146257 Capacitor and semiconductor device including the same |
| 06/11/2009 | US20090146256 Method of forming semiconductor device including capacitor and semiconductor device including capacitor |
| 06/11/2009 | US20090146255 Capacitor for Semiconductor Device and Method for Manufacturing the Same |
| 06/11/2009 | US20090146253 Semiconductor device and method of manufacturing the same |
| 06/11/2009 | US20090146252 Integrated inductor structure |
| 06/11/2009 | US20090146248 Semiconductor structure and method of manufacture |
| 06/11/2009 | US20090146247 Semiconductor ground shield |
| 06/11/2009 | US20090146244 Semiconductor structure and method of manufacture |
| 06/11/2009 | US20090146243 Semiconductor Device Having Recessed Channel and Method for Manufacturing the Same |
| 06/11/2009 | US20090146242 Metal ion transistor and related methods |
| 06/11/2009 | US20090146241 Semiconductor apparatus and manufacturing method thereof |
| 06/11/2009 | US20090146233 Non-magnetic semiconductor spin transistor |
| 06/11/2009 | US20090146231 Magnetic memory device having a C-shaped structure and method of manufacturing the same |
| 06/11/2009 | US20090146230 Semiconductor pressure sensor, method for producing the same, semiconductor device, and electronic apparatus |
| 06/11/2009 | US20090146229 Semiconductor device and method for fabricating the same |
| 06/11/2009 | US20090146228 Microminiature moving device |
| 06/11/2009 | US20090146227 Capacitive sensor and manufacturing method therefor |
| 06/11/2009 | US20090146226 Mechanical memory tarnsistor |
| 06/11/2009 | US20090146225 Semiconductor device and method for fabricating the same |
| 06/11/2009 | US20090146223 Process and method to lower contact resistance |
| 06/11/2009 | US20090146214 Method for manufacturing an eeprom cell |
| 06/11/2009 | US20090146210 Semiconductor on insulator (SOI) structure and method for fabrication |
| 06/11/2009 | US20090146209 Semiconductor device |
| 06/11/2009 | US20090146208 Independently controlled, double gate nanowire memory cell with self-aligned contacts |
| 06/11/2009 | US20090146207 Nonvolatile Memory Devices Including Common Source |
| 06/11/2009 | US20090146206 Non-volatile semiconductor storage device and method of manufacturing the same |
| 06/11/2009 | US20090146205 Floating Gate of Flash Memory Device and Method of Forming the Same |
| 06/11/2009 | US20090146204 Semiconductor device and method of fabricating the same |
| 06/11/2009 | US20090146203 Nonvolatile semiconductor memory device |
| 06/11/2009 | US20090146202 Organic memory device and method of manufacture |
| 06/11/2009 | US20090146201 Work function engineering for fn eras of a memory device with multiple charge storage elements in an undercut region |
| 06/11/2009 | US20090146200 Magnesium-doped zinc oxide structures and methods |
| 06/11/2009 | US20090146194 Semiconductor device and method of manufacturing a semiconductor device |
| 06/11/2009 | US20090146193 Conductive Interconnects |
| 06/11/2009 | US20090146192 MOS transistor and method of forming the MOS transistor with a SiON etch stop layer that protects the transistor from PID and hot carrier degradation |
| 06/11/2009 | US20090146191 Low leakage schottky contact devices and method |
| 06/11/2009 | US20090146189 Pads and pin-outs in three dimensional integrated circuits |
| 06/11/2009 | US20090146188 Semiconductor storage device and manufacturing method thereof |
| 06/11/2009 | US20090146187 Nitride semiconductor element and process for producing the same |
| 06/11/2009 | US20090146186 Gate after Diamond Transistor |
| 06/11/2009 | US20090146185 Insulated gate e-mode transistors |
| 06/11/2009 | US20090146184 Semiconductor device with t-gate electrode and method for fabricating the same |
| 06/11/2009 | US20090146183 Method of forming a germanium silicide layer, semiconductor device including the germanium silicide layer, and method of manufacturing the semiconductor device |
| 06/11/2009 | US20090146182 Nitride semiconductor device and method for fabricating the same |
| 06/11/2009 | US20090146181 Integrated circuit system employing diffused source/drain extensions |
| 06/11/2009 | US20090146180 Ldmos with channel stress |
| 06/11/2009 | US20090146177 Variable threshold trench igbt with offset emitter contacts |
| 06/11/2009 | US20090146171 Semiconductor light-emitting device and method for manufacturing the same |
| 06/11/2009 | US20090146162 Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
| 06/11/2009 | US20090146161 Group iii nitride compound semiconductor stacked structure |
| 06/11/2009 | US20090146154 Transistor with A-Face Conductive Channel and Trench Protecting Well Region |
| 06/11/2009 | US20090146152 Thin film transistor array panel and method for manufacturing the same |
| 06/11/2009 | US20090146146 Semiconductor Device formed in a Recrystallized Layer |
| 06/11/2009 | US20090146141 Method for manufacturing n-type and p-type chalcogenide material, doped homojunction chalcogenide thin film transistor and method of fabricating the same |
| 06/11/2009 | US20090146133 Hybrid semiconductor structure |
| 06/11/2009 | US20090146126 Probe-based memory |
| 06/10/2009 | EP2068379A1 Organic semiconductor material, organic semiconductor device using the same, and their production methods |
| 06/10/2009 | EP2068368A2 Method for manufacturing n-type and p-type chalcogenide material, doped homojunction chalcogenide thin film transistor and method of fabricating the same |
| 06/10/2009 | EP2068367A1 Methods of manufacturing an oxide semiconductor thin film transistor |
| 06/10/2009 | EP2068366A2 Semiconductor device and manufacturing method thereof |
| 06/10/2009 | EP2068365A2 Semiconductor device |
| 06/10/2009 | EP2068364A2 Trench MOSFET including buried source electrode |
| 06/10/2009 | EP2068363A2 Trench-gate MISFET |
| 06/10/2009 | EP2068355A1 Compound semiconductor device and process for producing the same |
| 06/10/2009 | EP2068351A1 Floating gate non-volatile memory device and method for manufacturing same |
| 06/10/2009 | EP2068350A1 Multiple layer floating gate non-volatile memory device |
| 06/10/2009 | EP2068348A1 Conductive isostructural compounds |
| 06/10/2009 | EP2067173A1 Semiconductor device and manufacturing method thereof |
| 06/10/2009 | EP2067170A1 Semiconductor arrangement having coupled depletion layer field effect transistor |
| 06/10/2009 | EP2067169A1 Shielding floating gate tunneling element structure |
| 06/10/2009 | EP2067168A2 Reduced leakage dram memory cells with vertically oriented nanorods and manufacturing methods therefor |
| 06/10/2009 | EP2067164A1 Semiconductor device and method of forming a semiconductor device |
| 06/10/2009 | EP1721344A4 Method of manufacturing a superjunction device |
| 06/10/2009 | EP1350264A4 Method for forming a pattern and a semiconductor device |
| 06/10/2009 | DE112007001892T5 P-Kanal-Feldeffekttransistor aus nanokristallinem Diamant P-channel field-effect transistor of nanocrystalline diamond |
| 06/10/2009 | DE112007001860T5 Siliziumcarbidhalbleitervorrichtung und Verfahren zu deren Herstellung Siliziumcarbidhalbleitervorrichtung and processes for their preparation |
| 06/10/2009 | DE10361714B4 Halbleiterbauelement Semiconductor device |
| 06/10/2009 | DE10340603B4 Schaltungsanordnung und Spannungsregeleinrichtung mit Schaltungsanordnung Circuitry and voltage regulating device with circuitry |
| 06/10/2009 | DE10301655B4 Steuerschaltung für eine Leistungshalbleitervorrichtung Control circuit for a power semiconductor device |
| 06/10/2009 | DE10240449B4 Verfahren zur Herstellung einer dielektrischen Schicht mit geringem Leckstrom, wobei eine erhöhte kapazitive Kopplung erzeugt wird A process for preparing a dielectric layer having a low leakage current, wherein an increased capacitive coupling is generated |
| 06/10/2009 | DE10223709B4 Verfahren zum Herstellen eines Doppel-Gate-Transistors A method of manufacturing a double gate transistor |
| 06/10/2009 | DE102008060300A1 Halbleitervorrichtung Semiconductor device |
| 06/10/2009 | DE102008009086B3 Integrated circuit manufacturing method, involves oxidizing metallic layer of transistor, and implementing temperature step for activating dopants before oxidization of metallic layer or simultaneously for oxidizing metallic layer |
| 06/10/2009 | DE102006025342B4 Halbleitervorrichtung mit isoliertem Gate und Herstellungsverfahren dafür A semiconductor device comprising insulated gate and production method thereof |
| 06/10/2009 | DE102005050328B4 Schottky-Diode Schottky diode |
| 06/10/2009 | DE10055177B4 Elektronisches Bauelement mit einem Halbleiter, insbesondere einem Leistungshalbleiter, mit Trennwänden zwischen den Anschlussstiften An electronic component with a semiconductor, in particular a power semiconductor, with partition walls between the pins |
| 06/10/2009 | CN201256151Y 快恢复二极管芯片 Fast recovery diode chips |
| 06/10/2009 | CN101452968A PN junction varactor and merit figure extracting process thereof |
| 06/10/2009 | CN101452967A Schottky barrier diode device and manufacturing method thereof |
| 06/10/2009 | CN101452966A Zener diode and manufacturing method thereof |
| 06/10/2009 | CN101452965A Semiconductor apparatus and manufacturing method thereof |
| 06/10/2009 | CN101452964A Non-volatile memory device having a silicon-nitride and silicon oxide top dielectric layer |
| 06/10/2009 | CN101452963A Metallic nanocrystalline floating gate non-volatile memory and manufacturing method thereof |
| 06/10/2009 | CN101452962A 半导体装置 Semiconductor device |