Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2009
07/14/2009US7560761 Semiconductor structure including trench capacitor and trench resistor
07/14/2009US7560759 Semiconductor device and method of manufacturing the same
07/14/2009US7560758 MOSFETs comprising source/drain recesses with slanted sidewall surfaces, and methods for fabricating the same
07/14/2009US7560757 Semiconductor device with a structure suitable for miniaturization
07/14/2009US7560756 Tri-gate devices and methods of fabrication
07/14/2009US7560755 Self aligned gate JFET structure and method
07/14/2009US7560753 Field effect transistor with thin gate electrode and method of fabricating same
07/14/2009US7560752 Field effect transistor including two group III-V compound semiconductor layers
07/14/2009US7560750 Solar cell device
07/14/2009US7560748 Light emitting diode unit
07/14/2009US7560739 Micro or below scale multi-layered heterostructure
07/14/2009US7560738 Light-emitting diode array having an adhesive layer
07/14/2009US7560737 Semiconductor light emitting element and fabrication method thereof
07/14/2009US7560734 Semiconductor device and manufacturing method thereof
07/14/2009US7560733 Organic light emitting device
07/14/2009US7560732 Semiconductor device and method of fabricating the same
07/14/2009US7560728 Vertical organic transistor and method of fabricating the same
07/14/2009US7560723 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
07/14/2009US7560397 Laser irradiation method and method of manufacturing a semiconductor device
07/14/2009US7560396 Material for electronic device and process for producing the same
07/14/2009US7560394 Nanodots formed on silicon oxide and method of manufacturing the same
07/14/2009US7560376 Method for adjoining adjacent coatings on a processing element
07/14/2009US7560368 Insulated gate planar integrated power device with co-integrated Schottky diode and process
07/14/2009US7560357 Method for creating narrow trenches in dielectric materials
07/14/2009US7560353 Methods of fabricating memory devices with memory cell transistors having gate sidewall spacers with different dielectric properties
07/14/2009US7560347 Methods for forming a wrap-around gate field effect transistor
07/14/2009US7560346 Semiconductor device and method of manufacturing the same
07/14/2009US7560343 Manufacturing method of non-volatile memory
07/14/2009US7560341 Semiconductor device and manufacturing method therefor
07/14/2009US7560339 Nonvolatile memory cell comprising a reduced height vertical diode
07/14/2009US7560329 Semiconductor device and method for fabricating the same
07/14/2009US7560328 Strained Si on multiple materials for bulk or SOI substrates
07/14/2009US7560325 Methods of making lateral junction field effect transistors using selective epitaxial growth
07/14/2009US7560323 Compound semiconductor device and method of fabricating the same
07/14/2009US7560320 Nonvolatile semiconductor memory and a fabrication method for the same
07/14/2009US7560315 Manufacturing method for semiconductor device
07/14/2009US7560291 Method for fabrication of high temperature superconductors
07/14/2009US7560172 Low voltage CMOS structure with dynamic threshold voltage
07/14/2009US7559131 Method of making a radio frequency identification (RFID) tag
07/14/2009CA2649012A1 Polymer semiconductors with high mobility
07/09/2009WO2009086517A2 Heavily doped region in double-diffused source mosfet (ldmos) transistor and a method of fabricating the same
07/09/2009WO2009086433A2 Non-volatile memory cell with charge storage layer in u-shaped groove
07/09/2009WO2009086157A1 Memory device comprising a silicon nitride charge storage layer doped with boron
07/09/2009WO2009085701A1 Structure and method for forming shielded gate trench fet with multiple channels
07/09/2009WO2009085520A2 Transistor having raised source/drain self-aligned contacts and method of forming same
07/09/2009WO2009085488A2 Device with asymmetric spacers
07/09/2009WO2009085167A1 Devices with graphene layers
07/09/2009WO2009085075A1 Two terminal nonvolatile memory using gate controlled diode elements
07/09/2009WO2009085015A1 Functionalised graphene oxide
07/09/2009WO2009084584A1 Method for forming semiconductor thin film and method for manufacturing thin film semiconductor device
07/09/2009WO2009084537A1 Process for producing thin film of a-igzo oxide
07/09/2009WO2009084431A1 Semiconductor material, method for manufacturing semiconductor material, and semiconductor element
07/09/2009WO2009084376A1 Semiconductor device and process for producing the semiconductor device
07/09/2009WO2009084318A1 Highly pure lanthanum, sputtering target comprising highly pure lanthanum, and metal gate film mainly composed of highly pure lanthanum
07/09/2009WO2009084312A1 Semiconductor device, substrate with single-crystal semiconductor thin film and methods for manufacturing same
07/09/2009WO2009084311A1 Semiconductor device, substrate with single-crystal semiconductor thin film and methods for manufacturing same
07/09/2009WO2009084309A1 Method for manufacturing semiconductor device and semiconductor device manufactured by the method
07/09/2009WO2009084307A1 Thin film semiconductor device and field effect transistor
07/09/2009WO2009084287A1 Semiconductor device, and its manufacturing method
07/09/2009WO2009084284A1 Insulating substrate for semiconductor device, semiconductor device, and method for manufacturing semiconductor device
07/09/2009WO2009084242A1 Semiconductor substrate and method for manufacturing semiconductor substrate
07/09/2009WO2009084241A1 Semiconductor substrate, method for producing semiconductor substrate, and electronic device
07/09/2009WO2009084240A1 Semiconductor substrate, method for producing semiconductor substrate, and electronic device
07/09/2009WO2009084239A1 Semiconductor substrate, method for producing semiconductor substrate, and electronic device
07/09/2009WO2009084238A1 Semiconductor substrate, method for manufacturing semiconductor substrate, and electronic device
07/09/2009WO2009084206A1 Semiconductor memory device and method for manufacturing same
07/09/2009WO2009084149A1 Semiconductor device and method for manufacturing the same
07/09/2009WO2009084137A1 Semiconductor device and method for manufacturing the same
07/09/2009WO2009084125A1 Semiconductor device manufacturing method and semiconductor device
07/09/2009WO2009041713A3 Method for manufacturing an oxide semiconductor field-effect transistor
07/09/2009WO2009023304A3 High density nanotube devices
07/09/2009WO2009009612A9 Growth of self-assembled gan nanowires and application in nitride semiconductor bulk material
07/09/2009US20090176364 Semiconductor device having a refractory metal containing film and method for manufacturing the same
07/09/2009US20090176352 Semiconductor device, method of manufacturing the same, and substrate for manufacturing the same
07/09/2009US20090176338 Fully-depleted (fd)(soi) mosfet access transistor and method of fabrication
07/09/2009US20090176124 Bonding pad structure and semiconductor device including the bonding pad structure
07/09/2009US20090175110 Non-volatile memory element and method of operation therefor
07/09/2009US20090175089 Retention in NVM with top or bottom injection
07/09/2009US20090175073 Nanostructure-Based Memory
07/09/2009US20090174435 Monolithically-Integrated Graphene-Nano-Ribbon (GNR) Devices, Interconnects and Circuits
07/09/2009US20090174428 Programmable element, and memory device or logic circuit
07/09/2009US20090174320 Display device having improved luminance by reflecting leaked light
07/09/2009US20090174041 Ultraviolet blocking structure and method for semiconductor device
07/09/2009US20090174038 Production of single-crystal semiconductor material using a nanostructure template
07/09/2009US20090174037 Semiconductor substrate, method of fabricating the same, method of fabricating semiconductor device, and method of fabricating image sensor
07/09/2009US20090174036 Plasma curing of patterning materials for aggressively scaled features
07/09/2009US20090174034 Semiconductor device and method of manufacturing such a device
07/09/2009US20090174033 Adjustible resistor for use in a resistive divider circuit and method for manufacturing
07/09/2009US20090174032 Resistance change memory device
07/09/2009US20090174031 Dram having deep trench capacitors with lightly doped buried plates
07/09/2009US20090174030 Linearity capacitor structure and method
07/09/2009US20090174016 Magnetic memory device
07/09/2009US20090174015 Memory Cell and Method of Forming a Magnetic Tunnel Junction (MTJ) of a Memory Cell
07/09/2009US20090174014 Micromechanical Actuators Comprising Semiconductors on a Group III Nitride Basis
07/09/2009US20090174013 Semiconductor device and manufacturing method thereof
07/09/2009US20090174012 Field Effect Transistor
07/09/2009US20090174011 Semiconductor device having guard ring
07/09/2009US20090174010 Sram device structure including same band gap transistors having gate stacks with high-k dielectrics and same work function
07/09/2009US20090174007 Semiconductor memory device
07/09/2009US20090174006 Structure and method of creating entirely self-aligned metallic contacts