| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/18/2009 | US20090152587 Deep guard regions for reducing latch-up in electronics devices |
| 06/18/2009 | US20090152566 Junction field-effect transistor |
| 06/18/2009 | US20090152565 Pendeo epitaxial structures and devices |
| 06/18/2009 | US20090152559 Manufacturing method of thin film transistor and manufacturing method of display device |
| 06/18/2009 | US20090152558 Semiconductor device and method of manufacturing the same |
| 06/18/2009 | US20090152557 Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device |
| 06/18/2009 | US20090152553 Thin-film transistor, substrate and display device each having the thin-film transistor, and method of manufacturing the thin-film transistor |
| 06/18/2009 | US20090152551 Semiconductor device and manufacturing method thereof |
| 06/18/2009 | US20090152550 Semiconductor device and method for manufacturing semiconductor device |
| 06/18/2009 | US20090152541 Electronic device, semiconductor device and manufacturing method thereof |
| 06/18/2009 | US20090152539 Semiconductor Apparatus and Fabrication Method of the Same |
| 06/18/2009 | US20090152529 Light emitting devices with inhomogeneous quantum well active regions |
| 06/18/2009 | US20090152528 High-power, broad-band, superluminescent diode and method of fabricating the same |
| 06/18/2009 | US20090152527 Method for producing catalyst-free single crystal silicon nanowires, nanowires produced by the method and nanodevice comprising the nanowires |
| 06/18/2009 | US20090151868 Encapsulated organic luminescent display panel and method for manufacturing the same |
| 06/18/2009 | DE19924061B4 Halbleiterdrucksensor mit Dehnungsmeßstreifen und Spannungsausgleichsfilm Semiconductor pressure sensor with strain and stress compensation film |
| 06/18/2009 | DE19836953B4 MOSFET und Verfahren zu seiner Herstellung MOSFET and method for its preparation |
| 06/18/2009 | DE19530510B4 Verfahren zur Herstellung eines Halbleitersensors mit aufgehängter bzw. beweglich gehaltener Mikrostruktur A process for producing a semiconductor sensor with movable held or suspended microstructure |
| 06/18/2009 | DE10250902B4 Verfahren zur Entfernung von Strukturelementen unter Verwendung eines verbesserten Abtragungsprozess bei der Herstellung eines Halbleiterbauteils A process for the removal of structural elements using an improved removal process in the manufacture of a semiconductor device |
| 06/18/2009 | DE10214150B4 Siliziumkarbidhalbleitervorrichtung und Verfahren zur Herstellung derselben Silicon carbide semiconductor device and method of manufacturing the same |
| 06/18/2009 | DE102008058837A1 Halbleitereinrichtungen und Verfahren zu deren Herstellung Semiconductor devices and processes for their preparation |
| 06/18/2009 | DE102007061191A1 Halbleiterbauelement mit einem Halbleiterkörper A semiconductor device comprising a semiconductor body |
| 06/18/2009 | DE102007045074B4 Halbleiterbauelement mit Gatestapelstruktur A semiconductor device with gate stack structure |
| 06/18/2009 | DE102007041191B4 Verfahren zur Herstellung eines MOSFET-Bauteils des Trench Gate-Typs sowie MOS-Feldeffekttransistor A method for producing a MOSFET device of the trench gate type, as well as MOS-field effect transistor |
| 06/18/2009 | DE102005014744B4 Trenchtransistor mit erhöhter Avalanchefestigkeit und Herstellungsverfahren Trench transistor with increased avalanche strength and manufacturing processes |
| 06/18/2009 | DE102004063991B4 Verfahren zur Herstellung von dotierten Halbleitergebieten in einem Halbleiterkörper eines lateralen Trenchtransistors A process for the production of doped semiconductor regions in a semiconductor body of a lateral trench transistor |
| 06/18/2009 | DE102004059657B4 Diamanthalbleitervorrichtung und Verfahren zu dessen Herstellung Diamond semiconductor device and process for its preparation |
| 06/18/2009 | CA2701523A1 Method of fastening lamellar of a lamellar material to a suitable substrate |
| 06/18/2009 | CA2677412A1 Semiconductor device manufacturing method and semiconductor device |
| 06/17/2009 | EP2071630A1 Thin film transistor, method for manufacturing the same, and display |
| 06/17/2009 | EP2071629A1 Lateral semiconductor device |
| 06/17/2009 | EP2071627A2 Semiconductor device |
| 06/17/2009 | EP2071623A2 Metallization structure for high power microelectronic devices |
| 06/17/2009 | EP2071555A1 Active matrix substrate |
| 06/17/2009 | EP2071394A1 Active matrix substrate and liquid crystal display device provided with same |
| 06/17/2009 | EP2070965A1 Polymer compound and polymer light-emitting device |
| 06/17/2009 | EP2070125A1 Power semiconductor device |
| 06/17/2009 | EP2070124A2 Flexible substrate with electronic devices and traces |
| 06/17/2009 | EP2070123A2 Led system and method |
| 06/17/2009 | EP2070118A2 Semiconductor device with circuits formed with essentially uniform pattern density |
| 06/17/2009 | EP2070115A2 Thin film solar cell with finger pattern |
| 06/17/2009 | EP2070110A2 Field effect transistor with raised source/drain fin straps |
| 06/17/2009 | EP2070108A1 Power mosfet with recessed field plate |
| 06/17/2009 | EP1932181A4 N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor |
| 06/17/2009 | EP1834350A4 Device having enhanced stress state and related methods |
| 06/17/2009 | EP1687457A4 Metal carbide gate structure and method of fabrication |
| 06/17/2009 | EP1380054A4 Improved electroluminescent devices and displays with integrally fabricated address and logic devices fabricated by printing or weaving |
| 06/17/2009 | EP1230684B1 Method for the production of a semiconductor component |
| 06/17/2009 | EP1192665B1 Heterojunction III-V bipolar transistor |
| 06/17/2009 | EP1145328B8 Junction-gate field-effect transistor with highly doped connecting areas |
| 06/17/2009 | EP1027723B1 Method of forming an electric capacitor |
| 06/17/2009 | CN101461067A Semiconductor field-effect transistor, memory cell and memory device |
| 06/17/2009 | CN101461066A Process for manufacturing a semiconductor power device and respective device |
| 06/17/2009 | CN101461065A Power device with improved edge termination |
| 06/17/2009 | CN101461046A 半导体器件 Semiconductor devices |
| 06/17/2009 | CN101459199A Semiconductor device and method of fabricating the same |
| 06/17/2009 | CN101459198A Semiconductor device and method of manufacturing the same |
| 06/17/2009 | CN101459197A Semiconductor device and method for fabricating the same |
| 06/17/2009 | CN101459196A MOSFET structure |
| 06/17/2009 | CN101459195A Electrolytic transistor and manufacturing process thereof |
| 06/17/2009 | CN101459194A Perofskite structure lanthanide manganese oxides/tin oxide heterogeneous p-n junction and preparation thereof |
| 06/17/2009 | CN100502060C Nitride semiconductor device |
| 06/17/2009 | CN100502055C Schottky barrier diode |
| 06/17/2009 | CN100502054C Semiconductor device manufacture method |
| 06/17/2009 | CN100502053C Semiconductor device |
| 06/17/2009 | CN100502052C Thin film transistor |
| 06/17/2009 | CN100502051C Thin-film transistor array and its repairing method |
| 06/17/2009 | CN100502050C Method for manufacturing semiconductor device |
| 06/17/2009 | CN100502049C Amorphous silicon film transistor with double grid structure and manufacture method thereof |
| 06/17/2009 | CN100502048C Thin film transistor (TFT) and flat display panel having the thin film transistor (TFT) |
| 06/17/2009 | CN100502047C Thin film transistor |
| 06/17/2009 | CN100502046C Semiconductor device with film transistor |
| 06/17/2009 | CN100502045C Semiconductor device and manufacturing method |
| 06/17/2009 | CN100502044C Insulated gate field effect transistor and manufacturing method thereof |
| 06/17/2009 | CN100502043C High-voltage transistor adopting non-homogeneous gate oxide and its manufacturing method |
| 06/17/2009 | CN100502042C Electrically erasable programmable read only memory cell and method for making the same |
| 06/17/2009 | CN100502041C Semiconductor device |
| 06/17/2009 | CN100502040C Semiconductor device and method for manufacturing the same, and electronic device |
| 06/17/2009 | CN100502039C Enhanced RESURF HVPMOS device with stacked hetero-doping rim and gradual drift region |
| 06/17/2009 | CN100502038C Transistor type ferroelectric memory and method of manufacturing the same |
| 06/17/2009 | CN100502037C Transistor, method of manufacturing transistor, and method of operating transistor |
| 06/17/2009 | CN100502036C Vertical gate semiconductor device and process for fabricating the same |
| 06/17/2009 | CN100502035C Semiconductor device and method for producing it |
| 06/17/2009 | CN100502034C Electronic device, integrated circuit, and method of manufacturing the same |
| 06/17/2009 | CN100502033C Semiconductor chip having multi-hole single crystal layer and manufacturing method thereof |
| 06/17/2009 | CN100502032C Method and apparatus for performance enhancement in an asymmetrical semiconductor device |
| 06/17/2009 | CN100502031C Semiconductor device |
| 06/17/2009 | CN100502018C Method for manufacturing thin-film semiconductor circuit, and element substrate |
| 06/17/2009 | CN100502010C Memory device using multi-layer with a graded resistance change |
| 06/17/2009 | CN100502009C SONOS type memory device |
| 06/17/2009 | CN100501999C Semiconductor device and manufacturing method thereof |
| 06/17/2009 | CN100501984C 半导体结构 The semiconductor structure |
| 06/17/2009 | CN100501980C Semiconductor device and its production method |
| 06/17/2009 | CN100501960C Lead solder indicator and method |
| 06/17/2009 | CN100501954C Semiconductor device having epitaxial C49 titanium silicide (TiSi2)layer and its manufacturing method |
| 06/17/2009 | CN100501951C Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth |
| 06/17/2009 | CN100501947C Multi-gate transistor formed with active patterns of uniform critical dimension and its making method |
| 06/17/2009 | CN100501944C Method for manufacturing semiconductor device |
| 06/17/2009 | CN100501943C Semiconductor device with trench structure and its manufacture method |
| 06/17/2009 | CN100501928C Fabrication process of flash memory cell with self-aligned gates |