| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 08/05/2009 | EP1966827A4 High mobility power metal-oxide semiconductor field-effect transistors |
| 08/05/2009 | EP1875508A4 Field effect transistor with mixed-crystal-orientation channel and source/drain regions |
| 08/05/2009 | EP1806036A4 Packaging and manufacturing of an integrated circuit |
| 08/05/2009 | EP1743380A4 Split-channel antifuse array architecture |
| 08/05/2009 | EP1678762A4 Lateral high-voltage junction device |
| 08/05/2009 | EP1668706B1 Method for metal replacement gate of high performance device |
| 08/05/2009 | EP1430536B1 Method for fabricating vertical dual gate field effect transistor |
| 08/05/2009 | EP1275156B1 Process for fabricating thin film transistors |
| 08/05/2009 | EP0912999B1 SiC SEMICONDUCTOR DEVICE COMPRISING A pn JUNCTION WITH A VOLTAGE ABSORBING EDGE |
| 08/05/2009 | CN101501861A Method of manufacturing a double gate transistor |
| 08/05/2009 | CN101501860A Semiconductor device having a P-MOS transistor with source-drain extension counter-doping |
| 08/05/2009 | CN101501859A High power insulated gate bipolar transistors |
| 08/05/2009 | CN101501858A Near natural breakdown device |
| 08/05/2009 | CN101501857A Multi-level interconnections for an integrated circuit chip |
| 08/05/2009 | CN101501856A Low voltage transient voltage suppressor with reduced breakdown voltage |
| 08/05/2009 | CN101501855A Semiconductor die having a protective periphery region and method for forming |
| 08/05/2009 | CN101501840A Chip attack protection |
| 08/05/2009 | CN101501839A Method for driving semiconductor device, and semiconductor device |
| 08/05/2009 | CN101501828A Jfet with built in back gate in either soi or bulk silicon |
| 08/05/2009 | CN101501827A Device and method of manufacture for a low noise junction field effect transistor |
| 08/05/2009 | CN101501821A Method for manufacturing electronic circuit component |
| 08/05/2009 | CN101501820A Method for forming conductive film, thin film transistor, panel with thin film transistor, and method for manufacturing thin film transistor |
| 08/05/2009 | CN101501819A Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails |
| 08/05/2009 | CN101501818A Method for making a semiconductor device including band-engineered superlattice using intermediate annealing |
| 08/05/2009 | CN101501505A Combined sensor |
| 08/05/2009 | CN101501080A Insulating layer, electronic device, field effect transistor, and polyvinylthiophenol |
| 08/05/2009 | CN101499498A Optical sensor element, image forming apparatus, electronic apparatus and storage element |
| 08/05/2009 | CN101499490A Structure design of ultra-low voltage protection device |
| 08/05/2009 | CN101499489A Metal oxide semiconductor field-effect tranisistor and preparation method thereof |
| 08/05/2009 | CN101499488A Semiconductor devices and methods of fabricating the same |
| 08/05/2009 | CN101499487A Wide groove shaped polysilicon gate associated transistor |
| 08/05/2009 | CN101499482A Non-volatile memory and its manufacturing method |
| 08/05/2009 | CN101499477A Light emitting device and its production method |
| 08/05/2009 | CN101499473A Semiconductor device having insulated gate semiconductor element, and insulated gate bipolar transistor |
| 08/05/2009 | CN101499441A Flash Memory and manufacturing method thereof |
| 08/05/2009 | CN101499423A Semiconductor component and its manufacturing method, and manufacturing method for complementary semiconductor component |
| 08/05/2009 | CN101499421A Mesa type semiconductor device and manufacturing method thereof |
| 08/05/2009 | CN101499420A Flat conductive medium buffer layer technique for semiconductor electrostatic protection device |
| 08/05/2009 | CN101499416A Method of growing group III-V compound semiconductor, and method of manufacturing light-emitting device and electronic device |
| 08/05/2009 | CN101499405A Method for producing single-layer polysilicon gate non-volatile memory |
| 08/05/2009 | CN101499322A CCD device and method of driving same |
| 08/05/2009 | CN101498870A Reflection transmission type LCD device |
| 08/05/2009 | CN100524874C Phase change tip storage cell, integrated circuit and manufacturing method thereof |
| 08/05/2009 | CN100524831C Semiconductor memory cell, memory array and operation method thereof |
| 08/05/2009 | CN100524830C Schottky diode |
| 08/05/2009 | CN100524829C Method and structure for operating memory devices on fringes of control gate |
| 08/05/2009 | CN100524828C Vertical double-channel silicon-on-insulator transistor and method of manufacturing the same |
| 08/05/2009 | CN100524827C Normal bigri FET having improved carrier mobility and method of its formation |
| 08/05/2009 | CN100524826C Semiconductor structure with stressor channel and its forming method |
| 08/05/2009 | CN100524825C Semiconductor device and method of manufacturing the same |
| 08/05/2009 | CN100524824C High voltage semiconductor device and method for fabricating the same |
| 08/05/2009 | CN100524823C Semiconductor structure and manufacturing method thereof |
| 08/05/2009 | CN100524822C Gate insulating film forming method, computer-readable storage medium, and computer program |
| 08/05/2009 | CN100524821C Semiconductor device structure and manufature method thereof |
| 08/05/2009 | CN100524820C LDMOS device and method of fabrication |
| 08/05/2009 | CN100524819C 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 08/05/2009 | CN100524818C Vertical mos transistor |
| 08/05/2009 | CN100524817C Semiconductor film, semiconductor device and mfg. method |
| 08/05/2009 | CN100524816C Semiconductor device and method of manufacturing semiconductor device |
| 08/05/2009 | CN100524815C Finfet transistor and circuit |
| 08/05/2009 | CN100524814C Isolation trench and forming method thereof |
| 08/05/2009 | CN100524813C MRAM cells having magnetic write lines with a stable magnetic state at the end regions |
| 08/05/2009 | CN100524812C Integrated circuit structure with improved LDMOS design |
| 08/05/2009 | CN100524811C Insulated gate type semiconductor device |
| 08/05/2009 | CN100524810C Horizontal PNP type audion and its making method |
| 08/05/2009 | CN100524809C A field effect transistor semiconductor device |
| 08/05/2009 | CN100524808C Authenticated device and individual authentication system |
| 08/05/2009 | CN100524780C TFT LCD array substrate structure and method for forming non-comformal insulation film and use |
| 08/05/2009 | CN100524778C Embedded silicon germanium using a double buried oxide silicon-on-insulator wafer |
| 08/05/2009 | CN100524776C Methods to resolve hard-to-erase condition in charge trapping non-volatile memory |
| 08/05/2009 | CN100524775C Single layer polysilicon grid programmable device and method for forming the same |
| 08/05/2009 | CN100524774C Memory cell, memory cell configuration and method for producing the same |
| 08/05/2009 | CN100524773C Manufacturing method of memory, and memory |
| 08/05/2009 | CN100524769C Semiconductor storage device, manufacturing method thereof and portable electronic equipment |
| 08/05/2009 | CN100524768C Memory array having a layer with electrical conductivity anisotropy |
| 08/05/2009 | CN100524767C Nonvolatile semiconductor memory cell with electron-trapping erase state and methods for operating the same |
| 08/05/2009 | CN100524764C Memory and method of fabricating the same |
| 08/05/2009 | CN100524762C Two transistor nor device |
| 08/05/2009 | CN100524761C Semiconductor device and its manufacturing method |
| 08/05/2009 | CN100524752C Semiconductor device and correlation product thereof |
| 08/05/2009 | CN100524735C Semiconductor device |
| 08/05/2009 | CN100524733C Semiconductor power module |
| 08/05/2009 | CN100524730C Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure |
| 08/05/2009 | CN100524711C Semiconductor device using etched lead frame and method for manufacturing semiconductor package |
| 08/05/2009 | CN100524705C Semiconductor package and manufacturing method thereof |
| 08/05/2009 | CN100524694C Method of manufacturing semiconductor device |
| 08/05/2009 | CN100524667C Sectional field effect transistor making method |
| 08/05/2009 | CN100524664C Semiconductor structure and forming method thereof |
| 08/05/2009 | CN100524663C MOSFET and manufacturing method thereof |
| 08/05/2009 | CN100524661C Semiconductor device with slot type grid and producing method thereof |
| 08/05/2009 | CN100524659C Semiconductor device |
| 08/05/2009 | CN100524655C Self aligned damascene gate |
| 08/05/2009 | CN100524654C Drain/source extension structure of a field effect transistor including doped high-k sidewall spacers |
| 08/05/2009 | CN100524653C Anisotropic wet etch device and its production method |
| 08/05/2009 | CN100524652C Substrate treating device and method |
| 08/05/2009 | CN100524643C Semiconductor device and method for manufacturing the same |
| 08/05/2009 | CN100524629C Laser irradiating device and laser irradiating method |
| 08/05/2009 | CN100524621C Crystalline gallium nitride base compound growth method and semiconductor component containing gallium nitride base compound |
| 08/05/2009 | CN100524422C Transistor circuit, display panel and electronic apparatus |
| 08/05/2009 | CN100523967C Transflective liquid crystal display and manufacturing method of the same |