Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2009
06/24/2009CN100505320C Semiconductor device and manufacturing method thereof
06/24/2009CN100505319C Gated diode and method of forming same
06/24/2009CN100505318C Field effect transistor
06/24/2009CN100505317C Memory element
06/24/2009CN100505316C Non-volatile memory with erase gate on isolation zones
06/24/2009CN100505315C Thin-film transistor and image display device
06/24/2009CN100505314C Dual bar and dual stress channel-changing full consumption SOI MOSFETs part structure
06/24/2009CN100505313C Semiconductor device and a method of manufacturing the same
06/24/2009CN100505312C Portable information terminal
06/24/2009CN100505311C Asymmetric recessed gate mosfet and method for manufacturing the same
06/24/2009CN100505310C Semiconductor device and image display device
06/24/2009CN100505309C A portable information terminal and a camera
06/24/2009CN100505308C High-voltage device structure
06/24/2009CN100505307C Amplifier comprising a field-effect transistor for high-frequency applications
06/24/2009CN100505306C MOS transistor having a mesh-type gate electrode
06/24/2009CN100505305C SOI-LDMOS device
06/24/2009CN100505304C A GaN base field effect tube and its making method
06/24/2009CN100505303C Dense dual-plane devices
06/24/2009CN100505302C Trench gate field effect devices
06/24/2009CN100505301C High-mobility bulk silicon p channel field effect transistor
06/24/2009CN100505300C Semiconductor device and method of manufacturing the same
06/24/2009CN100505299C Semiconductor device
06/24/2009CN100505298C Semiconductor device and method of manufacturing the same
06/24/2009CN100505276C Strained insulated silicon
06/24/2009CN100505274C Active matrix electronic array device
06/24/2009CN100505273C Planar substrate with blended orientations and its forming method
06/24/2009CN100505267C Nonvolatile semiconductor memory device having coupled strap region and fabricating method thereof
06/24/2009CN100505254C Semiconductor device and its manufactureing method
06/24/2009CN100505241C Semiconductor protection device
06/24/2009CN100505219C Method for the manufacture of a non-volatile memory device and memory device thus obtained
06/24/2009CN100505183C Narrow-body damascene tri-gate FINFET having thinned body
06/24/2009CN100505182C Method for planarizing gate material to improve gate critical dimension in semiconductor devices
06/24/2009CN100504994C Electro-optical device and driving method therefore, electronic device and projection type display device
06/24/2009CN100504993C Display device
06/24/2009CN100504599C Manufacture method of display element
06/24/2009CN100504558C Active matrix substrate and display device
06/24/2009CN100504553C Thin film transistor array panel and liquid crystal display including the panel
06/24/2009CN100503244C Piezoelectric element, fabrication method for the same, and inkjet head, inkjet recording apparatus and angular velocity sensor including the same
06/23/2009USRE40771 Liquid crystal display device and method of driving the same
06/23/2009US7551511 NAND flash memory device and method of forming a well of a NAND flash memory device
06/23/2009US7551493 Data processing device
06/23/2009US7551417 Thin film circuit substrate, piezoelectric speaker device, display device, and sound-generating display device
06/23/2009US7551329 Led chip mounting structure and image reader having same
06/23/2009US7551255 Organic light emitting display device
06/23/2009US7551216 CCD imaging device and driving method thereof
06/23/2009US7550853 Electrical isolation of monolithic circuits using a conductive through-hole in the substrate
06/23/2009US7550851 low resistivity connection between a tungsten layer and Si surface with high adherence of the tungsten to the silicon; very thin layer of Si-NH2 is formed on the silicon surface, serving an adhesion layer. WNx layer is formed over the Si-NH2 layer, W layer over WNx layer, nitriding to form WNx layers
06/23/2009US7550850 Semiconductor device
06/23/2009US7550847 Packaged microelectronic devices and methods for packaging microelectronic devices
06/23/2009US7550837 Semiconductor device and voltage regulator
06/23/2009US7550823 Nonvolatile memory cell, array thereof, fabrication methods thereof and device comprising the same
06/23/2009US7550821 Nitride semiconductor device
06/23/2009US7550820 Reverse-biased PN diode decoupling capacitor
06/23/2009US7550819 Metal thin-film resistance element on an insulation film
06/23/2009US7550818 Method of manufacture of a PCRAM memory cell
06/23/2009US7550817 Semiconductor device having fuse with protection capacitor
06/23/2009US7550816 Filled trench isolation structure
06/23/2009US7550815 Semiconductor device and method of producing the same
06/23/2009US7550813 Photoelectric converting film stack type solid-state image pickup device, and method of producing the same
06/23/2009US7550809 Semiconductor integrated circuit device having deposited layer for gate insulation
06/23/2009US7550808 Fully siliciding regions to improve performance
06/23/2009US7550807 Semiconductor memory
06/23/2009US7550805 Stress-controlled dielectric integrated circuit
06/23/2009US7550804 Semiconductor device and method for forming the same
06/23/2009US7550803 Vertical double-diffusion metal-oxide-semiconductor transistor device
06/23/2009US7550802 Nonvolatile semiconductor memory device and manufacturing process of the same
06/23/2009US7550801 Nonvolatile semiconductor memory device
06/23/2009US7550799 Semiconductor device and fabrication method of a semiconductor device
06/23/2009US7550796 Germanium semiconductor device and method of manufacturing the same
06/23/2009US7550795 SOI devices and methods for fabricating the same
06/23/2009US7550794 Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer
06/23/2009US7550791 Transistor and its method of manufacture
06/23/2009US7550790 D/A conversion circuit and semiconductor device
06/23/2009US7550789 Using electrically programmable fuses to hide architecture, prevent reverse engineering, and make a device inoperable
06/23/2009US7550788 Semiconductor device having fuse element arranged between electrodes formed in different wiring layers
06/23/2009US7550787 Varied impurity profile region formation for varying breakdown voltage of devices
06/23/2009US7550786 Compound semiconductor epitaxial substrate
06/23/2009US7550785 PHEMT structure having recessed ohmic contact and method for fabricating same
06/23/2009US7550784 Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
06/23/2009US7550783 Wide bandgap HEMTs with source connected field plates
06/23/2009US7550781 Integrated III-nitride power devices
06/23/2009US7550780 Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer
06/23/2009US7550778 System and method for providing access to an encapsulated device
06/23/2009US7550773 FinFET with top body contact
06/23/2009US7550772 Image display device and manufacturing method thereof
06/23/2009US7550770 Dual gate layout for thin film transistor
06/23/2009US7550769 Light emitting element, light emitting device and semiconductor device
06/23/2009US7550768 Thin film transistor array panel and method for manufacturing the same
06/23/2009US7550765 Semiconductor device and fabrication method thereof
06/23/2009US7550764 Liquid crystal display device and method of fabricating the same
06/23/2009US7550762 Isolation circuit
06/23/2009US7550761 Switchable memory diode—a new memory device
06/23/2009US7550759 Capacitive single-electron transistor
06/23/2009US7550758 Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator
06/23/2009US7550755 Semiconductor device with tunable energy band gap
06/23/2009US7550554 Aryl amine polymer, thin film transistor using the new aryl amine polymer, and method of manufacturing the thin film transistor
06/23/2009US7550398 Semiconductor device and method of fabricating the same
06/23/2009US7550393 Solid-state imaging device with reduced smear
06/23/2009US7550370 Method of forming thin SGOI wafers with high relaxation and low stacking fault defect density
06/23/2009US7550368 Group-III nitride semiconductor stack, method of manufacturing the same, and group-III nitride semiconductor device