| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/25/2009 | US20090159967 Semiconductor device having various widths under gate |
| 06/25/2009 | US20090159965 Semiconductor device and method for fabricating the same |
| 06/25/2009 | US20090159964 Vertical channel transistor and method of fabricating the same |
| 06/25/2009 | US20090159962 Non-Volatile Memory Devices |
| 06/25/2009 | US20090159961 Semiconductor memory device with stacked gate including charge storage layer and control gate and method of manufacturing the same |
| 06/25/2009 | US20090159960 Non-volatile memory device |
| 06/25/2009 | US20090159959 Nonvolatile semiconductor memory device and method of fabricating the same |
| 06/25/2009 | US20090159958 Electronic device including a silicon nitride layer and a process of forming the same |
| 06/25/2009 | US20090159957 Nonvolatile memories with laterally recessed charge-trapping dielectric |
| 06/25/2009 | US20090159955 Nonvolatile memory device and method of fabricating the same |
| 06/25/2009 | US20090159954 Non-volatile two-transistor programmable logic cell and array layout |
| 06/25/2009 | US20090159953 Method for manufacturing flash memory device |
| 06/25/2009 | US20090159952 Method of fabricating non-volatile memory integrated circuit device and non-volatile memory integrated circuit device fabricated using the same |
| 06/25/2009 | US20090159951 Flash memory device |
| 06/25/2009 | US20090159950 Semiconductor Device and manufacturing Method of Semiconductor Device |
| 06/25/2009 | US20090159949 Semiconductor memory device which includes memory cell having charge accumulation layer and control gate |
| 06/25/2009 | US20090159944 Image sensor and method of manufacturing the same |
| 06/25/2009 | US20090159939 Semiconductor device and manufacturing method for the same |
| 06/25/2009 | US20090159938 Method of manufacturing a semiconductor device and semiconductor device obtained with such a method |
| 06/25/2009 | US20090159937 Simple Scatterometry Structure for Si Recess Etch Control |
| 06/25/2009 | US20090159936 Device with asymmetric spacers |
| 06/25/2009 | US20090159935 CMOS Image Sensor and Method for Manufacturing the Same |
| 06/25/2009 | US20090159934 Field effect device with reduced thickness gate |
| 06/25/2009 | US20090159933 Integration scheme for changing crystal orientation in hybrid orientation technology (hot) using direct silicon bonded (dsb) substrates |
| 06/25/2009 | US20090159932 Integration scheme for reducing border region morpphology in hybrid orientation technology (hot) using direct silicon bonded (dsb) substrates |
| 06/25/2009 | US20090159931 Semiconductor Device |
| 06/25/2009 | US20090159930 High electron mobility transistor having self-aligned miniature field mitigating plate and protective dielectric layer and fabrication method thereof |
| 06/25/2009 | US20090159929 Heterostructure device and associated method |
| 06/25/2009 | US20090159928 Power semiconductor devices |
| 06/25/2009 | US20090159927 Integrated circuit device and method for its production |
| 06/25/2009 | US20090159926 Semiconductor device and method of manufacturing the same |
| 06/25/2009 | US20090159925 Bidirectional electronic switch |
| 06/25/2009 | US20090159923 Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device |
| 06/25/2009 | US20090159918 Semiconductor light emitting devices and submounts and methods for forming the same |
| 06/25/2009 | US20090159898 Semiconductor device and method of manufacturing thereof |
| 06/25/2009 | US20090159897 Method for treating semiconductor processing components and components formed thereby |
| 06/25/2009 | US20090159896 Silicon carbide mosfet devices and methods of making |
| 06/25/2009 | US20090159892 Array substrate for liquid crystal display device and method of fabricating the same |
| 06/25/2009 | US20090159891 Modifying a surface in a printed transistor process |
| 06/25/2009 | US20090159888 Display panel and method for manufacturing the same |
| 06/25/2009 | US20090159887 Thin film transistor and method of manufacturing the same |
| 06/25/2009 | US20090159886 Printed tft array |
| 06/25/2009 | US20090159885 Diode and display device including diode |
| 06/25/2009 | US20090159884 Thin-film transistor, method of manufacturing the same, and display device |
| 06/25/2009 | US20090159882 Test Pattern of Semiconductor Device and Manufacturing Method Thereof |
| 06/25/2009 | US20090159880 Electronic device and method of manufacturing the same |
| 06/25/2009 | US20090159872 Reducing Ambipolar Conduction in Carbon Nanotube Transistors |
| 06/25/2009 | US20090159866 Integrated Circuits With Phase Change Devices |
| 06/25/2009 | DE60320191T2 Ferromagnetischer Raumtemperatur-Halbleiter und Plasma unterstützte Molekularstrahlepitaxie wie Verfahren zu seiner Herstellung Room temperature ferromagnetic semiconductor and plasma-assisted molecular beam epitaxy as method for its preparation |
| 06/25/2009 | DE19954351B4 Halbleiterbauelement Semiconductor device |
| 06/25/2009 | DE10212371B4 Verfahren zur Herstellung eines Halbleiterbauelementes A process for producing a semiconductor device |
| 06/25/2009 | DE102008061962A1 Semiconductor device i.e. n-channel super-junction-MOS-transistor, for power applications, has PN-column layer comprising column layers with impurity amount differences that are positive and negative, respectively |
| 06/25/2009 | DE102008059846A1 Drain-Erweiterter Feldeffekttransistor Extended drain field effect transistor |
| 06/25/2009 | DE102008056574A1 Halbleiterbauelement und Verfahren zur Herstellung desselben A semiconductor device and method of manufacturing the same |
| 06/25/2009 | DE102008044408A1 Halbleiterbauelementanordnung mit niedrigem Einschaltwiderstand Semiconductor device assembly with low on-resistance |
| 06/25/2009 | DE102007061527A1 Integrated circuit manufacturing method, involves depositing silicon layer on metallic layer, performing structuring process to form electrodes on dielectric layer, performing temperature step, and siliciding part of metallic layer |
| 06/25/2009 | DE102007060371A1 Rectifier chip-connection structure for use in electrode of e.g. vehicle generator, has connection-sleeve arranged at end of base part, where ends of connection-sleeve form region different from each cross sectional area of inner wall |
| 06/25/2009 | DE102006046788B4 Verfahren zur Herstellung einer Halbleiterschaltungsanordnung A method for fabricating a semiconductor circuit arrangement |
| 06/25/2009 | DE102005041285B4 Grabenstrukturhalbleitereinrichtung und Verfahren zu deren Herstellung Grave structure semiconductor device and process for their preparation |
| 06/25/2009 | DE102005041257B4 Feldelektroden-Trenchtransistorstruktur mit Spannungsteiler Field electrodes trench transistor structure with voltage divider |
| 06/25/2009 | DE102004047626B4 Thyristoren mit integriertem Freiwerdeschutz Thyristors with integrated free Get Protection |
| 06/25/2009 | CA2808570A1 Magnetic tunnel junction device with separate read and write paths |
| 06/24/2009 | EP2073290A1 Organic thin film transistor device and organic thin film light-emitting transistor |
| 06/24/2009 | EP2073274A1 Diode |
| 06/24/2009 | EP2073273A1 Power diode with trench field ring structure |
| 06/24/2009 | EP2073271A1 Reverse-conducting insulated gate bipolar transistor and method for manufacturing such a reverse-conducting insulated gate bipolar transistor |
| 06/24/2009 | EP2073266A1 Drive method of nanogap switching element and storage apparatus equipped with nanogap switching element |
| 06/24/2009 | EP2073257A2 Printed TFT and TFT array with self-aligned gate |
| 06/24/2009 | EP2073256A1 Method for fabricating a semiconductor device and the semiconductor device made thereof |
| 06/24/2009 | EP2073255A2 Diode and display device comprising diode |
| 06/24/2009 | EP2072458A1 Verfahren zum Bilden eines Katalysators zum Wachsen von Nanoröhrchen/Nanofasern und zum horizontalen Wachsen von Nanoröhrchen/Nanofasern |
| 06/24/2009 | EP1721338A4 Reprogrammable metal-to-metal antifuse employing carbon-containing antifuse material |
| 06/24/2009 | EP1588453B1 Varactor apparatuses and methods |
| 06/24/2009 | EP1476904B1 Integrated semiconductor circuit comprising a parallel connection of coupled capacitors |
| 06/24/2009 | EP1275147B1 Method of manufacturing a semiconductor device |
| 06/24/2009 | CN101467262A Junction barrier Schottky rectifiers and methods of making thereof |
| 06/24/2009 | CN101467261A Scalable process and structure for JFET for small and decreasing line widths |
| 06/24/2009 | CN101467260A Electrical switching device and method of embedding catalytic material in a diamond substrate |
| 06/24/2009 | CN101467259A Semiconductor device including a dopant blocking superlattice and associated methods |
| 06/24/2009 | CN101467258A Technique for producing power semiconductor device and corresponding power semiconductor device |
| 06/24/2009 | CN101467257A Light-emitting device using oxide semiconductor thin-film transistor and image display apparatus using the same |
| 06/24/2009 | CN101467050A 加速度传感器 Acceleration sensor |
| 06/24/2009 | CN101465385A Capacitor structure |
| 06/24/2009 | CN101465384A Polycrystalline silicon-insulator-polycrystalline silicon capacitance structure |
| 06/24/2009 | CN101465383A Schottky diode and manufacturing method thereof, method for manufacturing electric resistance transition memory |
| 06/24/2009 | CN101465382A Mesa semiconductor device and method of manufacturing the same |
| 06/24/2009 | CN101465381A Memory |
| 06/24/2009 | CN101465380A Semiconductor device and method for manufacturing the device |
| 06/24/2009 | CN101465379A Semiconductor device and method for manufacturing the device |
| 06/24/2009 | CN101465378A Semiconductor device and its manufacturing method |
| 06/24/2009 | CN101465377A Semiconductor device and method for manufacturing the device |
| 06/24/2009 | CN101465376A MOS device with low injection diode |
| 06/24/2009 | CN101465375A MOS device with schottky barrier controlling layer |
| 06/24/2009 | CN101465374A MOS device with integrated schottky diode in active region contact trench |
| 06/24/2009 | CN101465373A Semiconductor device and method for manufacturing the device |
| 06/24/2009 | CN101465372A AlN/GaN enhancement type metal-insulator-semiconductor field effect transistor and method of producing the same |
| 06/24/2009 | CN101465371A Semiconductor device and method of manufacturing the same |
| 06/24/2009 | CN101465370A Halbleitervorrichtung mit super junction |
| 06/24/2009 | CN100505332C Phototransistor |
| 06/24/2009 | CN100505330C Silicon-on-insulator (SOI) trench photodiode and method of forming same |