Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2009
07/01/2009EP2075847A1 Silicon carbide semiconductor device and method for fabricating the same
07/01/2009EP2075835A2 Diode with stress reducing means
07/01/2009EP2075831A2 Semiconductor device with shared contact hole for gate electrode and drain region
07/01/2009EP2075257A1 Preparation of antibody using mrl/lpr mouse
07/01/2009EP2074662A1 Tunnel field effect transistor
07/01/2009EP2074661A2 Use of quantum system identification and quantum control techniques for medical diagnostic and therapeutic purposes
07/01/2009EP2074660A1 Control of carbon nanostructure growth in an interconnect structure
07/01/2009EP2074649A2 A multi-transistor based non-volatile memory cell with dual threshold voltage
07/01/2009EP1905095A4 Gate electrode structures and methods of manufacture
07/01/2009EP1842239A4 Structure and method to optimize strain in cmosfets
07/01/2009EP1836732A4 METHOD OF FORMING HfSiN METAL FOR n-FET APPLICATIONS
07/01/2009EP1747586A4 Method of manufacturing a solid image pick-up device and a solid image pick-up device
07/01/2009EP1701686A4 Method of manufacturing a superjunction device with conventional terminations
07/01/2009EP1258040A4 Vertical conduction flip-chip device with bump contacts on single surface
07/01/2009CN101473445A Functionalized carbon nanotubes
07/01/2009CN101473444A Semiconductor device and method of manufacturing the same
07/01/2009CN101473443A Structure and method for forming a shielded gate trench FET with the shield and gate electrodes being connected together
07/01/2009CN101473442A Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
07/01/2009CN101471386A Integrating capacitor based on standard CMOS technology and method for producing the same
07/01/2009CN101471385A Nonvolatile semiconductor memory
07/01/2009CN101471384A Nonvolatile memory device and method for manufacturing the same
07/01/2009CN101471383A Nonvolatile semiconductor memory device, method for manufacturing the same, and nonvolatile memory array
07/01/2009CN101471382A Non-volatility memory of floating single grid and operation method thereof
07/01/2009CN101471381A Trench gate mosfet and method for fabricating the same
07/01/2009CN101471380A Lateral double difused metal oxide semiconductor transistor and method for manufacturing the same
07/01/2009CN101471379A Semiconductor device and process for manufacturing same
07/01/2009CN101471378A Isolated gate bipolar transistor and its manufacturing method
07/01/2009CN101471377A Semiconductor device and method of fabricating the same
07/01/2009CN101471231A Method of forming a micro pattern of a semiconductor device
07/01/2009CN100508218C MIM structure and method of forming same
07/01/2009CN100508217C Capacitor in semiconductor device and manufacturing method
07/01/2009CN100508216C Junction semiconductor device and method for manufacturing the same
07/01/2009CN100508215C Thin-film transistor, pixel structure and LCD panel
07/01/2009CN100508214C Film transistor with non-continuous conducting film
07/01/2009CN100508213C Semiconductor device and method of manufacturing the same
07/01/2009CN100508212C 半导体器件 Semiconductor devices
07/01/2009CN100508211C Fast switching power insulated gate semiconductor device
07/01/2009CN100508210C Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
07/01/2009CN100508209C NPN type germanium-silicon heterogenous dual-pole transistor and its making method
07/01/2009CN100508208C Germanium silicon heterogeneous crystal transistor with elevated external base area and its prodoucing process
07/01/2009CN100508197C Nonvolatile semiconductor memory device and preparation method thereof
07/01/2009CN100508195C Semiconductor device and operation method thereof
07/01/2009CN100508189C Circuit and method for amplifying signal
07/01/2009CN100508162C Semiconductor device and method for manufacturing the same
07/01/2009CN100508140C Manufacturing method for a semiconductor device
07/01/2009CN100508138C Method for manufacturing a semiconductor device having a dual-gate structure
07/01/2009CN100508130C Separately strained N-channel and P-channel transistors
07/01/2009CN100508122C Semiconductor device and manufacturing method thereof
07/01/2009CN100508112C Method for manufacturing semiconductor device
07/01/2009CN100508108C Small volume process chamber with hot inner surfaces
07/01/2009CN100507991C Plasma display apparatus
07/01/2009CN100507685C Liquid crystal display possessing capacitance compensation structure
07/01/2009CN100507684C Method for inhibiting electricity-leakage in image-collection
07/01/2009CN100507068C Aluminum alloy thin film, wiring circuit having the thin film and target material depositing the thin film
06/2009
06/30/2009US7555328 Implantable substrate sensor with back-to-back electrodes
06/30/2009US7554848 Operating techniques for reducing program and read disturbs of a non-volatile memory
06/30/2009US7554616 Electro-optical device and method of driving the same
06/30/2009US7554340 Capacitive sensor
06/30/2009US7554258 Light source having an LED and a luminescence conversion body and method for producing the luminescence conversion body
06/30/2009US7554209 Semiconductor device having a metal plate conductor
06/30/2009US7554208 Wirebond pad for semiconductor chip or wafer
06/30/2009US7554207 Method of forming a lamination film pattern and improved lamination film pattern
06/30/2009US7554204 Die offset die to die bonding
06/30/2009US7554203 Electronic assembly with stacked IC's using two or more different connection technologies and methods of manufacture
06/30/2009US7554202 Semiconductor integrated circuit device
06/30/2009US7554189 Wireless communication module
06/30/2009US7554181 Semiconductor device with non-overlapping chip mounting sections
06/30/2009US7554180 Package having exposed integrated circuit device
06/30/2009US7554177 Attachment system incorporating a recess in a structure
06/30/2009US7554174 Bipolar transistor having semiconductor patterns filling contact windows of an insulating layer
06/30/2009US7554173 Semiconductor device
06/30/2009US7554171 Semiconductor constructions
06/30/2009US7554170 Variably responsive photosensor
06/30/2009US7554168 Semiconductor acceleration sensor device
06/30/2009US7554165 Semiconductor device
06/30/2009US7554164 Semiconductor device having a gap between a gate electrode and a dummy gate electrode
06/30/2009US7554163 Semiconductor device
06/30/2009US7554162 Thin film transistor substrate with low reflectance upper electrode
06/30/2009US7554161 HfAlO3 films for gate dielectrics
06/30/2009US7554158 Semiconductor device having analog and digital circuits
06/30/2009US7554157 Lateral SOI component having a reduced on resistance
06/30/2009US7554155 Power semiconductor device and method of manufacturing the same
06/30/2009US7554154 Bottom source LDMOSFET structure and method
06/30/2009US7554153 Power semiconductor device
06/30/2009US7554152 Versatile system for integrated sense transistor
06/30/2009US7554151 Low voltage non-volatile memory cell with electrically transparent control gate
06/30/2009US7554150 Non-volatile memory device and method of manufacturing the same
06/30/2009US7554149 Flash memory devices comprising pillar patterns and methods of fabricating the same
06/30/2009US7554146 Metal-insulator-metal capacitor and method of fabricating the same
06/30/2009US7554145 Magnetic memory cells and manufacturing methods
06/30/2009US7554144 Memory device and manufacturing method
06/30/2009US7554139 Semiconductor manufacturing method and semiconductor device
06/30/2009US7554138 Method of manufacturing a strained semiconductor layer, method of manufacturing a semiconductor device and semiconductor substrate suitable for use in such a method including having a thin delta profile layer of germanium close to the bottom of the strained layer
06/30/2009US7554137 Power semiconductor component with charge compensation structure and method for the fabrication thereof
06/30/2009US7554134 Integrated CMOS porous sensor
06/30/2009US7554133 Pad current splitting
06/30/2009US7554132 Electronic device containing group-III element based nitride semiconductors
06/30/2009US7554130 Reducing effects of parasitic transistors in thyristor-based memory using an isolation or damage region
06/30/2009US7554129 Light emitting device
06/30/2009US7554128 Light-emitting apparatus