Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2009
08/11/2009US7571529 Method for forming an electronic device in multi-layer structure
08/06/2009WO2009097150A2 Solution-processed high mobility inorganic thin-film transistors
08/06/2009WO2009096961A1 Nanostructures and methods of making the same
08/06/2009WO2009096931A1 Semiconductor-based large-area flexible electronic devices
08/06/2009WO2009096608A1 Thin film transistor using an oxide semiconductor and display
08/06/2009WO2009096525A1 Thin film transistor
08/06/2009WO2009096470A1 Fabrication process of semiconductor device
08/06/2009WO2009096464A1 Semiconductor device, and method for manufacturing the same
08/06/2009WO2009096412A1 Semiconductor device
08/06/2009WO2009096407A1 Pressure sensor
08/06/2009WO2009096269A1 Silicon carbide semiconductor device
08/06/2009WO2009096241A1 Method for manufacturing electronic member, and electronic member
08/06/2009WO2009096233A1 Crimp-type high power thyristor module
08/06/2009WO2009096148A1 Semiconductor device and method for manufacturing the same
08/06/2009WO2009096083A1 Floating gate type nonvolatile memory device and method for manufacturing the same
08/06/2009WO2009096002A1 Manufacturing method of semiconductor storage device
08/06/2009WO2009095997A1 Semiconductor device and its manufacturing method
08/06/2009WO2009075739A3 Forming thin film transistors using ablative films
08/06/2009WO2009052224A3 Semiconductor structures with rare-earths
08/06/2009WO2009031052A3 Zero-capacitor (floating body) random access memory circuits with polycide word lines and manufacturing methods therefor
08/06/2009WO2008100889A3 Gallium nitride traveling wave structures
08/06/2009US20090197399 Method of growing group iii-v compound semiconductor, and method of manufacturing light-emitting device and electron device
08/06/2009US20090197379 Selective epitaxy vertical integrated circuit components and methods
08/06/2009US20090196085 Sram memory cell protected against current or voltage spikes
08/06/2009US20090195967 Constructions Comprising Hafnium Oxide And/Or Zirconium Oxide
08/06/2009US20090195948 Methods for making a starting substrate wafer for semiconductor engineering having wafer through connections
08/06/2009US20090195724 Thin film transistor and display device having the same
08/06/2009US20090195723 Active matrix substrate and method of manufacturing the same
08/06/2009US20090195523 Electrooptical Device and Method of Fabricating the Same
08/06/2009US20090195297 Ccd device and method of driving same
08/06/2009US20090195296 Method for Recovering an On-State Forward Voltage and, Shrinking Stacking Faults in Bipolar Semiconductor Devices, and the Bipolar Semiconductor Devices
08/06/2009US20090194898 Hafnium Silicide Target for Forming Gate Oxide Film, and Method for Preparation Thereof
08/06/2009US20090194849 Methods and apparatus for manufacturing semiconductor wafers
08/06/2009US20090194848 Method for manufacturing gallium nitride crystal and gallium nitride wafer
08/06/2009US20090194847 A1xGa yIn 1-x-yN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME
08/06/2009US20090194846 Fully Cu-metallized III-V group compound semiconductor device with palladium/germanium/copper ohmic contact system
08/06/2009US20090194845 Semiconductor device comprising a capacitor in the metallization system and a method of forming the capacitor
08/06/2009US20090194844 Substrate contact for advanced soi devices based on a deep trench capacitor configuration
08/06/2009US20090194839 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
08/06/2009US20090194838 Cosi2 schottky diode integration in bismos process
08/06/2009US20090194833 TMR device with Hf based seed layer
08/06/2009US20090194832 Magnetic Tunnel Junction Cell Including Multiple Magnetic Domains
08/06/2009US20090194830 Semiconductor device transducer and method
08/06/2009US20090194829 MEMS Packaging Including Integrated Circuit Dies
08/06/2009US20090194828 Method for mems threshold sensor packaging
08/06/2009US20090194827 Semiconductor Device Having Element Portion and Method of Producing the Same
08/06/2009US20090194826 Field-effect microelectronic device, capable of forming one or several transistor channels
08/06/2009US20090194825 Self-aligned contact structure in a semiconductor device
08/06/2009US20090194822 Continuous multigate transistors
08/06/2009US20090194821 Semiconductor device and method of fabricating the same
08/06/2009US20090194815 High voltage transistor
08/06/2009US20090194814 Semiconductor device and method for manufacturing the same
08/06/2009US20090194813 Semiconductor device and method for manufacturing the same
08/06/2009US20090194812 Structure for Making a Top-side Contact to a Substrate
08/06/2009US20090194811 Structure and Method for Forming Field Effect Transistor with Low Resistance Channel Region
08/06/2009US20090194810 Semiconductor device using element isolation region of trench isolation structure and manufacturing method thereof
08/06/2009US20090194809 Semiconductor memory and method for manufacturing the same
08/06/2009US20090194808 Semiconductor device
08/06/2009US20090194807 Semiconductor memory device and method for manufacturing the same
08/06/2009US20090194806 Single poly type eeprom and method for manufacturing the eeprom
08/06/2009US20090194805 Non-Volatile Memory Device
08/06/2009US20090194803 Semiconductor device and method for manufacturing the same
08/06/2009US20090194797 Insulating film and semiconductor device including the same
08/06/2009US20090194796 Vertical Gallium Nitride Semiconductor Device and Epitaxial Substrate
08/06/2009US20090194793 Iii-nitride wafer and devices formed in a iii-nitride wafer
08/06/2009US20090194792 Semiconductor device and manufacturing method therefor
08/06/2009US20090194791 Compound semiconductor device and manufacturing method thereof
08/06/2009US20090194790 Field effect transister and process for producing the same
08/06/2009US20090194788 Strained channel transistor structure and method
08/06/2009US20090194787 Vertical outgassing channels
08/06/2009US20090194786 Semiconductor device and method of manufacturing same
08/06/2009US20090194785 Semiconductor device and manufacturing method thereof
08/06/2009US20090194784 Group-iii nitride compound semiconductor device and production method thereof, group-iii nitride compound semiconductor light-emitting device and production method thereof, and lamp
08/06/2009US20090194773 Gallium nitride material devices including diamond regions and methods associated with the same
08/06/2009US20090194772 Method For Fabricating Silicon Carbide Vertical MOSFET Devices
08/06/2009US20090194770 Double-active-layer structure with a polysilicon layer and a microcrystalline silicon layer, method for manufacturing the same and its application
08/06/2009US20090194769 Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device
08/06/2009US20090194767 Conductive oxide-deposited substrate and method for producing the same, and mis laminated structure and method for producing the same
08/06/2009US20090194766 Thin film transistor, method of manufacturing the same, and flat panel display device having the same
08/06/2009US20090194765 Ceramic MESFET device and manufacturing method thereof
08/06/2009US20090194764 Multi-layer storage node, resistive random access memory device including a multi-layer storage node and methods of manufacturing the same
08/06/2009US20090194763 Semiconductor element, method for manufacturing the semiconductor element, electronic device and method for manufacturing the electronic device
08/06/2009US20090194760 Memory element and display device
08/06/2009DE19804568B9 Vorrichtung bestehend aus einem Feldeffekttransistor (FET) in Verbindung mit einer Vorspannungs-Versorgungseinrichtung und einem kapazitiven Element und Verfahren zu deren Ansteuerung Device consisting of a field effect transistor (FET) in conjunction with a bias supply means, and a capacitive element and driving method thereof
08/06/2009DE10241396B4 Verfahren zur Herstellung eines Halbleiterelements mit T-förmiger Gate-Struktur, etwa eines FET und dessen Gate-Elektrode A process for producing a semiconductor element with a T-shaped gate structure, such as an FET and its gate electrode
08/06/2009DE102008063587A1 Graben-Gate-Mosfet und Verfahren zu seiner Herstellung Trench-gate MOSFET and method for its preparation
08/06/2009DE102008048832A1 Halbleitervorrichtung Semiconductor device
08/06/2009DE102007040869B4 Verfahren zur Herstellung eines Hochvolt-CMOS-Bauelementes und Bauelement A method for manufacturing a high-voltage CMOS device and component
08/06/2009DE102005018344B4 Herstellungsverfahren für rekonfigurierbare Verbindung Production method of compound reconfigurable
08/06/2009DE10119502B4 Halbleitergerät mit gleichmäßigen Strompfaden und kleinem Aufbau Semiconductor device with uniform flow paths and small construction
08/06/2009CA2742128A1 Semiconductor-based large-area flexible electronic devices
08/05/2009EP2086014A2 Conductive oxide-deposited substrate and method for producing the same, and MIS laminated structure and method for producing the same
08/05/2009EP2086013A1 Oxide semiconductor transistor and method of manufacturing the same
08/05/2009EP2086012A1 Reverse-conducting insulated gate bipolar transistor and method for manufacturing such a reverse-conducting insulated gate bipolar transistor
08/05/2009EP2086011A2 Thin film transistor and display device having the same
08/05/2009EP2086010A1 Semiconductor device and fabrication method of the semiconductor device
08/05/2009EP2086003A2 Method of growing group III-V compound semiconductor, and method of manufacturing light-emitting device and electronic device
08/05/2009EP2084749A1 Method for manufacturing thin film transistor which uses an oxide semiconductor
08/05/2009EP2084745A1 Device, and method for manufacturing the same
08/05/2009EP2006824A9 Electro-optic device, and tft substrate for current control and method for manufacturing the same