Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2009
08/20/2009WO2009102520A1 Microcrystalline silicon thin film transistor
08/20/2009WO2009102423A2 A single-polycrystalline silicon electrically erasable and programmable nonvolatile memory device
08/20/2009WO2009102301A1 High breakdown voltage double-gate semiconductor device
08/20/2009WO2009102213A1 Metal hybride semiconducting component
08/20/2009WO2009102165A2 Single electron transistor operating at room temperature and manufacturing method for same
08/20/2009WO2009102062A1 Semiconductor device and fabrication method thereof
08/20/2009WO2009102061A1 Semiconductor device manufacturing method
08/20/2009WO2009102060A1 Semiconductor device and method for manufacturing the same
08/20/2009WO2009102059A1 Semiconductor device manufacturing method
08/20/2009WO2009102031A1 Condensed polycyclic compound, condensed polycyclic polymer and organic thin film containing the compound or the polymer
08/20/2009WO2009101982A1 Fused ring compound, method for producing the same, polymer, organic thin film containing the compound and/or the polymer, and organic thin film device and organic thin film transistor each comprising the organic thin film
08/20/2009WO2009101944A1 Method for manufacturing semiconductor element and fine structure arranging substrate, and display element
08/20/2009WO2009101914A1 Polymer, organic thin film using the same, and organic thin film device
08/20/2009WO2009101870A1 Semiconductor device
08/20/2009WO2009101868A1 Driving method for reverse conducting semiconductor element, semiconductor device, and feeding device
08/20/2009WO2009101862A1 Method for forming film for organic semiconductor layer and method for manufacturing organic thin film transistor
08/20/2009WO2009101827A1 Magnetic domain wall motion device and magnetic random access memory
08/20/2009WO2009101824A1 Mis field effect transistor and method for manufacturing the same, and semiconductor device and method for manufacturing the same
08/20/2009WO2009101823A1 Branched compounds, organic thin films made by using the same, and organic thin film devices
08/20/2009WO2009101763A1 Semiconductor device and manufacturing method thereof
08/20/2009WO2009101704A1 Method for manufacturing semiconductor device
08/20/2009WO2009101668A1 Silicon carbide semiconductor device
08/20/2009WO2009101662A1 Semiconductor device manufacturing method, semiconductor device and display apparatus
08/20/2009WO2009101564A1 Finfet with separate gates and method for fabricating a finfet with separate gates
08/20/2009WO2009101150A1 Transistor
08/20/2009WO2009101093A1 Cmos integration scheme employing a silicide electrode and a silicide-germanide alloy electrode
08/20/2009WO2009014804A3 Nanotube dual gate transistor and method of operating the same
08/20/2009WO2007130077A3 Methods, devices and systems producing illumination and effects
08/20/2009US20090209078 Semiconductor Integrated Circuit Device and Method of Manufacturing the Same
08/20/2009US20090209070 Method for manufacturing a thin film transistor having a micro-crystalline silicon hydrogen feeding layer formed between a metal gate and a gate insulating film.
08/20/2009US20090209069 Organic semiconductor device and method for manufacturing the same
08/20/2009US20090209067 Semiconductor device method of manfacturing a quantum well structure and a semiconductor device comprising such a quantum well structure
08/20/2009US20090209060 Photoelectric converting film stack type solid-state image pickup device, and method of producing the same
08/20/2009US20090208922 Fet based sensor for detecting biomolecule, method for preparing the same, and method for detecting biomolecule using the fet based sensor
08/20/2009US20090207667 Nand flash memory array with cut-off gate line and methods for operating and fabricating the same
08/20/2009US20090207662 Multi-Transistor Non-Volatile Memory Element
08/20/2009US20090207649 Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array
08/20/2009US20090207556 Dielectric ceramic and capacitor
08/20/2009US20090207472 Optical device including gate insulating layer having edge effect
08/20/2009US20090207361 Active matrix type liquid crystal display and liquid crystal material
08/20/2009US20090207332 Integral-type liquid crystal panel with image sensor function
08/20/2009US20090207294 Method and apparatus for improving sensitivity in vertical color cmos image sensors
08/20/2009US20090206924 Semiconductor Device Structures and Related Processes
08/20/2009US20090206922 Single-chip common-drain JFET device and its applications
08/20/2009US20090206921 Single-chip common-drain JFET device and its applications
08/20/2009US20090206913 Edge Termination with Improved Breakdown Voltage
08/20/2009US20090206454 Semiconductor device and method for fabricating the same
08/20/2009US20090206453 Method for Preparing Modified Porous Silica Films, Modified Porous Silica Films Prepared According to This Method and Semiconductor Devices Fabricated Using the Modified Porous Silica Films
08/20/2009US20090206452 Method and system for creating self-aligned twin wells with co-planar surfaces in a semiconductor device
08/20/2009US20090206450 Method of manufacturing a semiconductor device, semiconductor device obtained herewith, and slurry suitable for use in such a method
08/20/2009US20090206449 Stress-modified device structures, methods of fabricating such stress-modified device structures, and design structures for an integrated circuit
08/20/2009US20090206448 Semiconductor device and method for manufacturing the same
08/20/2009US20090206444 Integrated semiconductor device
08/20/2009US20090206443 Devices including fin transistors robust to gate shorts and methods of making the same
08/20/2009US20090206441 Method of forming coplanar active and isolation regions and structures thereof
08/20/2009US20090206439 Semiconductor device
08/20/2009US20090206438 Semiconductor component
08/20/2009US20090206429 Angled implant for trench isolation
08/20/2009US20090206427 Magnetic memory device and method of fabricating the same
08/20/2009US20090206425 Semiconductor device and method of manufacturing semiconductor device
08/20/2009US20090206424 Hall-effect device with merged and/or non-merged complementary structure
08/20/2009US20090206423 Method for manufacturing micromechanical components
08/20/2009US20090206422 Micromechanical diaphragm sensor having a double diaphragm
08/20/2009US20090206421 Organic light emitting display and manufacturing method thereof
08/20/2009US20090206418 Semiconductor Constructions
08/20/2009US20090206414 Contact Configuration and Method in Dual-Stress Liner Semiconductor Device
08/20/2009US20090206412 Hybrid orientation scheme for standard orthogonal circuits
08/20/2009US20090206411 Semiconductor device and a method of manufacturing the same
08/20/2009US20090206410 Semiconductor device and method for manufacturing the same
08/20/2009US20090206408 Nested and isolated transistors with reduced impedance difference
08/20/2009US20090206407 Semiconductor devices having tensile and/or compressive stress and methods of manufacturing
08/20/2009US20090206406 Multi-gate device having a t-shaped gate structure
08/20/2009US20090206405 Fin field effect transistor structures having two dielectric thicknesses
08/20/2009US20090206404 Reducing external resistance of a multi-gate device by silicidation
08/20/2009US20090206403 Method of trimming a hard mask layer, method for fabricating a gate in a mos transistor, and a stack for fabricating a gate in a mos transistor
08/20/2009US20090206401 Trench transistor and method for fabricating a trench transistor
08/20/2009US20090206400 Systems and devices including fin transistors and methods of using, making, and operating the same
08/20/2009US20090206399 Method of forming a recess channel trench pattern, and fabricating a recess channel transistor
08/20/2009US20090206398 Semiconductor device and manufacturing method of the semiconductor device
08/20/2009US20090206397 Lateral Trench MOSFET with Conformal Depletion-Assist Layer
08/20/2009US20090206396 Vertical transistor of semiconductor device and method for forming the same
08/20/2009US20090206395 Trench mosfet with double epitaxial structure
08/20/2009US20090206394 Strained Channel PMOS Transistor and Corresponding Production Method
08/20/2009US20090206393 Nonvolatile memory element and method of manufacturing the same
08/20/2009US20090206392 Memory device and fabrication method thereof
08/20/2009US20090206391 Semiconductor memory device and method for manufacturing the same
08/20/2009US20090206390 Semiconductor nonvolatile memory device with inter-gate insulating film formed on the side surface of a memory cell and method for manufacturing the same
08/20/2009US20090206389 Nonvolatile memory device and method of manufacturing the same
08/20/2009US20090206388 Seperation methods for semiconductor charge accumulation layers and structures thereof
08/20/2009US20090206387 Non-volatile memory device, method of fabricating the same, and non-volatile semiconductor integrated circuit device, including the same
08/20/2009US20090206385 Non-volatile memory device and method of operating the same
08/20/2009US20090206384 Illuminating efficiency-increasable and light-erasable memory
08/20/2009US20090206383 Semiconductor Devices Having Tunnel and Gate Insulating Layers
08/20/2009US20090206382 Flash memory device and programming and erasing methods therewith
08/20/2009US20090206381 Anti-fuse and method for forming the same, unit cell of nonvolatile memory device with the same
08/20/2009US20090206379 Semiconductor device and manufacturing method thereof
08/20/2009US20090206378 Photo sensor and flat panel display using the same
08/20/2009US20090206376 Semiconductor device
08/20/2009US20090206375 Reduced Leakage Current Field-Effect Transistor Having Asymmetric Doping And Fabrication Method Therefor
08/20/2009US20090206374 Multi-fin multi-gate field effect transistor with tailored drive current
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