Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2009
08/20/2009US20090206373 Field effect transistor
08/20/2009US20090206371 Nitride semiconductor device and power conversion apparatus including the same
08/20/2009US20090206370 Method and apparatus for fabricating a heterojunction bipolar transistor
08/20/2009US20090206369 High electron mobility transistor semiconductor device and fabrication method thereof
08/20/2009US20090206368 Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials
08/20/2009US20090206367 Design Structure and Method for a Silicon Controlled Rectifier (SCR) Structure for SOI Technology
08/20/2009US20090206366 Semiconductor device and method for fabricating the same
08/20/2009US20090206365 Semiconductor device
08/20/2009US20090206364 Insulated gate bipolar transistor and method of fabricating the same
08/20/2009US20090206363 Solid-state switch capable of bidirectional operation
08/20/2009US20090206347 Semiconductor Device
08/20/2009US20090206346 Tft lcd array substrate and manufacturing method thereof
08/20/2009US20090206345 Semiconductor device
08/20/2009US20090206344 System for displaying images
08/20/2009US20090206342 Display device
08/20/2009US20090206341 Solution-processed high mobility inorganic thin-film transistors
08/20/2009US20090206340 Thin Film Transistor Array Panel
08/20/2009US20090206336 Method to fabricate gate electrodes
08/20/2009US20090206335 Bipolar complementary semiconductor device
08/20/2009US20090206333 ZnO BASED SEMICONDUCTOR DEVICE AND ITS MANUFACTURE METHOD
08/20/2009US20090206332 Oxide semiconductor transistor and method of manufacturing the same
08/20/2009US20090206325 Gan based semiconductor light-emitting device and method for producing same
08/20/2009US20090206324 Dislocation removal from a group iii-v film grown on a semiconductor substrate
08/20/2009US20090206321 Thin film transistor comprising nanowires and fabrication method thereof
08/20/2009US20090206320 Group iii nitride white light emitting diode
08/20/2009US20090206237 Phototransistor
08/20/2009US20090205705 Method for Fabricating a Semiconductor Component With a Specifically Doped Surface Region Using Out-Diffusion, and Corresponding Semiconductor Component
08/20/2009DE10235793B4 Verfahren zur Herstellung einer Halbleitervorrichtung (MOS-Transistor) A process for producing a semiconductor device (MOS transistor)
08/20/2009DE102008063422A1 Sensor zur Erfassung einer physikalischen Grösse Sensor for detecting a physical quantity
08/19/2009EP2091083A2 Silicon carbide semiconductor device including a deep layer
08/19/2009EP2091076A2 C implants for improved SiGe bipolar yield
08/19/2009EP2091072A1 Conductive film forming method, thin film transistor, panel with thin film transistor and thin film transistor manufacturing method
08/19/2009EP2090926A1 Transmission type liquid crystal display device and method for fabricating the same
08/19/2009EP2089908A2 Dual stress device and method
08/19/2009EP2089906A2 Two-terminal switching devices and their methods of fabrication
08/19/2009EP1949445A4 SECOND SCHOTTKY CONTACT METAL LAYER TO IMPROVE GaN SCHOTTKY DIODE PERFORMANCE
08/19/2009EP1652236A4 Eeprom with multi-member floating gate
08/19/2009EP1550150A4 A dmos device with a programmable threshold voltage
08/19/2009EP1438752B1 Silicon-on-insulator high-voltage device structure
08/19/2009EP1405347A4 Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same
08/19/2009EP1292979B1 Method for a direct buried strap for same level interconnections for semiconductor devices
08/19/2009CN101512777A Power trench MOSFET having SiGe/Si channel structure
08/19/2009CN101512776A Scalable electrically eraseable and programmable memory
08/19/2009CN101512775A Semiconductor device, method for manufacturing the semiconductor device, and display device
08/19/2009CN101512774A Semiconductor device
08/19/2009CN101512773A Closed cell configuration to increase channel density for sub-micron planar semiconductor power device
08/19/2009CN101512772A Non-volatile electrically alterable memory cell for storing multiple data and manufacturing thereof
08/19/2009CN101512771A Semiconductor structure with enhanced performance using a simplified dual stress liner configuration
08/19/2009CN101512770A P-channel nanocrystalline diamond field effect transistor
08/19/2009CN101512769A Laterally grown nanotubes and method of formation
08/19/2009CN101512754A Methods and devices for forming nanostructure monolayers and devices including such monolayers
08/19/2009CN101512739A Lateral junction field-effect transistor
08/19/2009CN101512738A Semiconductor device and method of forming the same
08/19/2009CN101512730A Conductive film forming method, thin film transistor, panel with thin film transistor and thin film transistor manufacturing method
08/19/2009CN101512729A Nanoscale floating gate and methods of formation
08/19/2009CN101512727A Method for improving inversion layer mobility in a silicon carbide MOSFET
08/19/2009CN101512664A Nonvolatile semiconductor memory device and read, write and delete method thereof
08/19/2009CN101511904A Polymer compound and polymer light-emitting device
08/19/2009CN101510564A Tunnel switch based on lead zirconat-titanato material
08/19/2009CN101510563A Flexible thin-film transistor and preparation method thereof
08/19/2009CN101510562A N type transversal bilateral diffusion metal oxide semiconductor tube capable of reducing hot carrier effect
08/19/2009CN101510561A Ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube
08/19/2009CN101510560A P type transversal bilateral diffusion metal oxide semiconductor tube capable of reducing hot carrier effect
08/19/2009CN101510559A Element and layout of power metal-oxide-semiconductor transistor
08/19/2009CN101510558A Semiconductor device and method for fabricating the same
08/19/2009CN101510557A Superjunction device having a dielectric termination and methods for manufacturing the device
08/19/2009CN101510556A Double-layer gate dielectric membrane with high dielectric coefficient and preparation method thereof
08/19/2009CN101510551A High voltage device for drive chip of plasma flat-panel display
08/19/2009CN101510550A Thin type transistor structure and dyamic ram and manufacturing method therefor
08/19/2009CN101510549A Transversal device of semiconductor
08/19/2009CN101510507A Storage element and manufacturing method thereof
08/19/2009CN101510030A Liquid crystal display panel and method for producing same
08/19/2009CN100530865C Surface emitting laser package having integrated optical element and alignment post
08/19/2009CN100530742C Method of doping organic semiconductors with quinonediimine derivatives
08/19/2009CN100530698C Capacitor having a dielectric layer that reduces leakage current and a method of manufacturing the same
08/19/2009CN100530697C N tunnel film transistor and display device and electronic component using the same transistor
08/19/2009CN100530696C Semiconductor device having channel fabricated from multicomponent oxide
08/19/2009CN100530695C Method of fabrication of printed transistors
08/19/2009CN100530694C Semiconductor device and method for forming the same
08/19/2009CN100530693C Method to control flatband/threshold voltage in high-k metal gated stacks and structures thereof
08/19/2009CN100530692C Semiconductor device doped with Sb,Ga or Bi and method of manufacturing the same
08/19/2009CN100530691C Semiconductor device including high-k insulating layer and method of manufacturing the same
08/19/2009CN100530690C Semiconductor device comprising multichannel fin field-effect transistor and method of manufacturing the same
08/19/2009CN100530689C Ldmos transistor
08/19/2009CN100530688C Multiple-gate transistors and forming method thereof
08/19/2009CN100530687C III-V HEMT devices
08/19/2009CN100530686C Single electronic transistor having memory function and its manufacturing method
08/19/2009CN100530685C Low-inductance gated thyristor and its power semiconductor assembly
08/19/2009CN100530684C Abnormal juntion dual-pole transistor and its making method
08/19/2009CN100530683C Semiconductor device and manufacturing method thereof
08/19/2009CN100530682C Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
08/19/2009CN100530681C Semiconductor device having step gates and method for fabricating the same
08/19/2009CN100530680C A modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit
08/19/2009CN100530679C Semiconductor device
08/19/2009CN100530670C Image sensors for reducing flicker and methods of manufacturing the same
08/19/2009CN100530661C Semiconductor device and manufacturing method thereof
08/19/2009CN100530660C Semiconductor device and manufacturing method thereof
08/19/2009CN100530659C Flash memory cell and the method of making separate sidewall oxidation
08/19/2009CN100530651C Semiconductor device
08/19/2009CN100530650C Semiconductor voltage regulation device
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