Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2009
08/13/2009WO2009034461A3 Semiconductor device and wire bonding method
08/13/2009US20090203231 Crystallization apparatus, crystallization method, phase modulation element, device and display apparatus
08/13/2009US20090203186 Semiconductor device and method of fabricating the same
08/13/2009US20090203180 Mos transistor having protruded-shape channel and method of fabricating the same
08/13/2009US20090203175 Method of manufacturing a semiconductor device
08/13/2009US20090203163 Method for making a transducer
08/13/2009US20090202787 Method for manufacturing a nanostructure in-situ, and in-situ manufactured nanostructure devices
08/13/2009US20090202089 Microphone with Reduced Parasitic Capacitance
08/13/2009US20090201743 Multiwalled carbon nanotube memory device
08/13/2009US20090201742 Single-polycrystalline silicon electrically erasable and programmable nonvolatile memory device
08/13/2009US20090201741 Non-volatile memory cell with injector
08/13/2009US20090201739 Method for driving semiconductor device, and semiconductor device
08/13/2009US20090201716 Memory Element with Positive Temperature Coefficient Layer
08/13/2009US20090201269 Semiconductor device
08/13/2009US20090201228 Photo sensor and flat panel display device using thereof
08/13/2009US20090201079 Single-chip common-drain JFET device and its applications
08/13/2009US20090201078 Single-chip common-drain JFET device and its applications
08/13/2009US20090200644 Semiconductor device and method for manufacturing semiconductor device
08/13/2009US20090200643 Semiconductor and method for producing the same
08/13/2009US20090200642 Highly tunable metal-on-semiconductor trench varactor
08/13/2009US20090200641 Semiconductor device and method of manufacturing the same
08/13/2009US20090200640 Variable resistive element, and its manufacturing method
08/13/2009US20090200639 Package substrate with built-in capacitor and manufacturing method thereof
08/13/2009US20090200637 Methods and devices for a high-k stacked capacitor
08/13/2009US20090200635 Integrated Circuit Having Electrical Isolation Regions, Mask Technology and Method of Manufacturing Same
08/13/2009US20090200628 Reduced imager crosstalk and pixel noise using extended buried contacts
08/13/2009US20090200620 Mems transducer and manufacturing method therefor
08/13/2009US20090200619 Systems and methods for mems device fabrication
08/13/2009US20090200618 Method of making transistor gates with controlled work function
08/13/2009US20090200616 Semiconductor device
08/13/2009US20090200613 Semiconductor device
08/13/2009US20090200612 Integrated Circuit Having Memory Cells Including Gate Material Having High Work Function, and Method of Manufacturing Same
08/13/2009US20090200611 Semiconductor device and a method for manufacturing the same
08/13/2009US20090200610 Semiconductor device and manufacturing method thereof
08/13/2009US20090200609 Semiconductor device, electro-optical device, electronic apparatus, method for manufacturing semiconductor device, method for manufacturing electro-optical device, and method for manufacturing electronic apparatus
08/13/2009US20090200608 Semiconductor device
08/13/2009US20090200607 Power mosfet
08/13/2009US20090200606 Power Device Edge Termination Having a Resistor with One End Biased to Source Voltage
08/13/2009US20090200605 Metal-Oxide-Semiconductor Device Including an Energy Filter
08/13/2009US20090200604 Vertical fin-fet mos devices
08/13/2009US20090200603 High density vertical structure nitride flash memory
08/13/2009US20090200602 Combined volatile and non-volatile memory device with graded composition insulator stack
08/13/2009US20090200601 Embedded trap direct tunnel non-volatile memory
08/13/2009US20090200600 Nonvolatile semiconductor memory device and method of manufacturing the same
08/13/2009US20090200599 U-shaped sonos memory having an elevated source and drain
08/13/2009US20090200598 Flash memory structure with enhanced capacitive coupling coefficient ratio (cccr) and method for fabrication thereof
08/13/2009US20090200597 Split-gate nonvolatile semiconductor memory device
08/13/2009US20090200596 Fabrication method and structure for providing a recessed channel in a nonvolatile memory device
08/13/2009US20090200595 Nonvolatile semiconductor memory device and method of manufacturing the same
08/13/2009US20090200594 Nonvolatile semiconductor memory device and method of manufacturing the same
08/13/2009US20090200593 Semiconductor device having mos-transistor formed on semiconductor substrate and method for manufacturing thereof
08/13/2009US20090200592 Semiconductor device
08/13/2009US20090200583 Feature Patterning Methods
08/13/2009US20090200582 Semiconductor device with an improved operating property
08/13/2009US20090200581 High breakdown voltage double-gate semiconductor device
08/13/2009US20090200579 Semiconductor device and layout method thereof
08/13/2009US20090200577 Semiconductor device and method of manufacturing such a device
08/13/2009US20090200576 Semiconductor device
08/13/2009US20090200575 Semiconductor device
08/13/2009US20090200574 Power semiconductor device
08/13/2009US20090200559 Silicon carbide semiconductor device including deep layer
08/13/2009US20090200558 Method and apparatus of fabricating liquid crystal display device
08/13/2009US20090200557 Semiconductor device
08/13/2009US20090200556 Thin film transistor panel for multi-domain liquid crystal display
08/13/2009US20090200554 Display device and method of manufacturing the same
08/13/2009US20090200553 High temperature thin film transistor on soda lime glass
08/13/2009US20090200552 Microcrystalline silicon thin film transistor
08/13/2009US20090200551 Microcrystalline silicon thin film transistor
08/13/2009US20090200550 Method for forming an electronic device on a flexible substrate supported by a detachable carrier
08/13/2009US20090200548 Guard ring extension to prevent realiability failures
08/13/2009US20090200545 ZnO-Based Semiconductor Device
08/13/2009US20090200543 Method of forming an electronic device on a substrate supported by a carrier and resultant device
08/13/2009US20090200541 Making a structure
08/13/2009US20090200540 Metal-Oxide-Semiconductor Device Including a Multiple-Layer Energy Filter
08/13/2009US20090200539 Composite Nanorod-Based Structures for Generating Electricity
08/13/2009US20090200455 Cmos aps with stacked avalanche multiplication layer and low voltage readout electronics
08/13/2009US20090200163 Chemical Sensor
08/13/2009US20090199902 Silicon solar cells comprising lanthanides for modifying the spectrum and method for the production thereof
08/13/2009US20090199637 Physical sensor
08/13/2009DE19903585B4 Halbleitersensor und Halbleitersensorchip und Halbleitersensorgehäuse Semiconductor sensor and semiconductor sensor chip and semiconductor sensor housing
08/13/2009DE112007002162T5 Verfahren zur Herstellung eines Halbleiterepitaxialkristallsubstrats A method for producing a Halbleiterepitaxialkristallsubstrats
08/13/2009DE102009005914A1 Halbleitervorrichtung mit Halbleiterelement mit isoliertem Gate und bipolarer Transistor mit isoliertem Gate A semiconductor device comprising insulated gate semiconductor element and a bipolar transistor with insulated gate
08/13/2009DE102008059848A1 Verbesserung des ESD/EOS-Verhaltens durch Einführung von Defekten Improve ESD / EOS behavior by introducing defects
08/13/2009DE102008008535A1 Einrichtung zur Fixierung eines elektronischen Bausteins wie Halbleiterelement Device for fixing an electronic device such as semiconductor element
08/13/2009DE102008007029A1 Körpergesteuerter Doppelkanaltransistor und entsprechende Schaltungsanordnungen Body controlled double channel transistor and associated circuitry
08/13/2009DE102008004860A1 Integrated circuit i.e. single pole double throw switch, for use in sensor for detecting and collecting e.g. biological factors, has drain region with n-type doping, and gate electrode arranged adjacent to and insulated from channel region
08/13/2009DE102004026210B4 Vorrichtung zur Erfassung einer physikalischen Größe und Gehäuse für eine Anordnung zur Messung einer physikalischen Größe A device for detecting a physical quantity and housing for a device for measuring a physical quantity
08/12/2009EP2088629A1 Semiconductor device and semiconductor device manufacturing method
08/12/2009EP2088628A1 Silicon carbide semiconductor device and process for producing the same
08/12/2009EP2088627A2 Power semiconductor device
08/12/2009EP2088626A1 Process for producing silicon carbide semiconductor device
08/12/2009EP2088620A1 Semiconductor device
08/12/2009EP2088618A1 Method of producing a floating gate
08/12/2009EP2088411A1 Pressure sensor module
08/12/2009EP2087522A2 Field-effect heterostructure transistors
08/12/2009EP2087521A1 Low defect si:c layer with retrograde carbon profile
08/12/2009EP2087520A2 Circuit configuration and manufacturing processes for vertical transient voltage suppressor (tvs) and emi filter
08/12/2009EP1935020A4 DENSE CHEVRON finFET AND METHOD OF MANUFACTURING SAME
08/12/2009EP1849196A4 Organic thin film transistor
08/12/2009EP1797617A4 Ceramic antenna module and methods of manufacture thereof
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