Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2009
08/27/2009US20090212351 Electron blocking layers for electronic devices
08/27/2009US20090212350 Nonvolatile semiconductor storage device and method of manufacturing the same
08/27/2009US20090212349 Semiconductor device and method for manufacturing the same
08/27/2009US20090212348 Mirror bit memory device applying a gate voltage alternately to gate
08/27/2009US20090212347 Sonos memory device with optimized shallow trench isolation
08/27/2009US20090212345 Semiconductor Device and Method for Manufacturing the Same
08/27/2009US20090212344 Flash memory device
08/27/2009US20090212343 Non-volatile two-transistor programmable logic cell and array layout
08/27/2009US20090212342 Asymmetric Single Poly NMOS Non-Volatile Memory Cell
08/27/2009US20090212341 Semitubular metal-oxide-semiconductor field effect transistor
08/27/2009US20090212340 Flash memory devices
08/27/2009US20090212339 Flash Memory Device and Method of Fabricating the Same
08/27/2009US20090212334 Semiconductor device and a method for manufacturing the same
08/27/2009US20090212333 Method of manufacturing a buried-gate semiconductor device and corresponding integrated circuit
08/27/2009US20090212332 Field effect transistor with reduced overlap capacitance
08/27/2009US20090212331 Semiconductor component with schottky zones in a drift zone
08/27/2009US20090212330 Method of fabricating a buried-gate semiconductor device and corresponding integrated circuit
08/27/2009US20090212329 Super hybrid soi cmos devices
08/27/2009US20090212328 Semiconductor device and manufacturing method thereof
08/27/2009US20090212326 Hetero Field Effect Transistor and Manufacturing Method Thereof
08/27/2009US20090212325 Hetero Field Effect Transistor and Manufacturing Method Thereof
08/27/2009US20090212324 Heterojunction field effect transistor
08/27/2009US20090212323 Silicon-controlled rectifier (scr) device for high-voltage electrostatic discharge (esd) applications
08/27/2009US20090212322 Vertical Semiconductor Device
08/27/2009US20090212321 Trench IGBT with trench gates underneath contact areas of protection diodes
08/27/2009US20090212320 Semiconductor devices and semiconductor apparatuses including the same
08/27/2009US20090212302 Substrate of liquid crystal device and method for manufacturing the same
08/27/2009US20090212301 Double Guard Ring Edge Termination for Silicon Carbide Devices and Methods of Fabricating Silicon Carbide Devices Incorporating Same
08/27/2009US20090212298 Thin Film Transistor Substrate Having Nickel-Silicide Layer
08/27/2009US20090212297 Laminating system
08/27/2009US20090212296 Method for manufacturing display device
08/27/2009US20090212295 Semiconductor device and method of fabricating the same
08/27/2009US20090212294 Semiconductor device and manufacturing method thereof
08/27/2009US20090212293 Semiconductor device and method for fabricating the same
08/27/2009US20090212292 Layer-selective laser ablation patterning
08/27/2009US20090212291 Transparent Thin Film Transistor and Image Display Unit
08/27/2009US20090212289 Thin film transistor and method for fabricating same
08/27/2009US20090212288 Thin film transistor, display device including the same, and method of manufacturing the display device
08/27/2009US20090212287 Thin film transistor and method for forming the same
08/27/2009US20090212286 Method for making amorphous polycrystalline silicon thin-film circuits
08/27/2009US20090212285 Semiconductor device and method of manufacturing thereof
08/27/2009US20090212283 Diode and resistive memory device structures
08/27/2009US20090212279 Nanostructure-Based Electronic Device
08/27/2009US20090212275 Nano/micro-sized diode and method of preparing the same
08/27/2009US20090212273 Semiconductor Devices Having Resistive Memory Elements
08/27/2009DE10338666B4 Verfahren zur Herstellung einer Oxidhalbleiterelektrode A process for preparing a Oxidhalbleiterelektrode
08/27/2009DE10241397B4 Verfahren zur Herstellung eines Halbleiterelements mit T-förmiger Gate-Struktur mit Seitenwandabstandselementen, die in-situ hergestellt sind A process for producing a semiconductor element with a T-shaped gate structure with sidewall spacers, which are prepared in-situ
08/27/2009DE102008062488A1 Halbleiterbauelement und Verfahren zur Herstellung des Bauelementes Semiconductor device and process for the preparation of the component
08/27/2009DE102008055819A1 Halbleiterbauelement mit Gates eines vertikalen und eines horizontalen Typs und Verfahren zu seiner Herstellung A semiconductor device with gates of a vertical and a horizontal type and process for its preparation
08/27/2009DE102008018038A1 Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers The optoelectronic semiconductor body and method for producing an optoelectronic semiconductor body
08/27/2009DE102008006961A1 Verfahren zum Erzeugen eines verformten Kanalgebiets in einem Transistor durch eine tiefe Implantation einer verformungsinduzierenden Sorte unter das Kanalgebiet A method for producing a strained channel region in a transistor by a deep implantation of a strain-cultivar under the channel region
08/27/2009DE102005023891B4 Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung und Siliziumkarbid-Halbleitervorrichtung A method of manufacturing a silicon carbide semiconductor device, and silicon carbide semiconductor device
08/27/2009CA2684876A1 Semiconductor device and method for manufacturing semiconductor device
08/26/2009EP2093815A1 Functional molecular element, process for producing the same and functional molecular device
08/26/2009EP2093810A2 ZnO based semiconductor device and its manufacture method
08/26/2009EP2093802A1 Insulating-gate fet and its manufacturing method
08/26/2009EP2093799A2 Integrated circuit with closely coupled high-voltage output and offline transistor pair
08/26/2009EP2093796A1 Semiconductor device and method for fabricating the same
08/26/2009EP2093791A2 Chip scale package with flip chip interconnect
08/26/2009EP2092569A1 Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus
08/26/2009EP2092568A2 Semiconductor device and method for production thereof
08/26/2009EP2092567A1 Mems package and packaging method thereof
08/26/2009EP2092320A1 Method of manufacturing a semiconductor sensor device and semiconductor sensor device obtained with such method
08/26/2009EP2092307A1 Semiconductor sensor device, diagnostic instrument comprising such a device and method of manufacturing such a device
08/26/2009EP1661177B1 Method for integrating metals having different work functions to form cmos gates having a high-k gate dielectric and related structure
08/26/2009EP1563555A4 Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
08/26/2009EP1547139A4 Large-area nanoenabled macroelectronic substrates and uses therefor
08/26/2009EP1390984B1 Floating gate memory device using composite molecular material
08/26/2009EP1252660B1 Bipolar transistor
08/26/2009CN101517746A Photosensor
08/26/2009CN101517744A Symmetric bipolar junction transistor design for deep sub-micron fabrication processes
08/26/2009CN101517743A Tapered voltage polysilicon diode electrostatic discharge circuit for power mosfets and ics
08/26/2009CN101517742A Field-effect heterostructure transistors
08/26/2009CN101517741A A transistor having a strained channel region including a performance enhancing material composition
08/26/2009CN101517732A Semiconductor device and method for manufacturing same
08/26/2009CN101517717A Active regions with compatible dielectric layers
08/26/2009CN101517716A Method for forming silicon oxide film, plasma processing apparatus and storage medium
08/26/2009CN101517715A Method for manufacturing semiconductor epitaxial crystal substrate
08/26/2009CN101517707A Array of non-volatile memory cells with floating gates formed of spacers in substrate trenches
08/26/2009CN101517653A Nonvolatile semiconductor storage device
08/26/2009CN101517629A Active matrix substrate
08/26/2009CN101517404A Semiconductor sensor device, diagnostic instrument comprising such a device and method of manufacturing such a device
08/26/2009CN101517387A Pressure sensor
08/26/2009CN101516962A Polymer compound and polymer light-emitting device using the same
08/26/2009CN101516960A Polymer compound and polymer light-emitting device using the same
08/26/2009CN101515601A Capacitor structure for voltage booster circuit and method for forming same
08/26/2009CN101515600A Nonvolatile memory element and method of manufacturing the same
08/26/2009CN101515599A Semiconductor memory element
08/26/2009CN101515598A Semiconductor device and method for manufacturing the same
08/26/2009CN101515597A Semiconductor device
08/26/2009CN101515590A Film transistor array substrate
08/26/2009CN101515588A Radio frequency SOI LDMOS device with H-shaped gate
08/26/2009CN101515586A Radio frequency SOI LDMOS device with close body contact
08/26/2009CN101515585A Flash memory device and method of fabricating the same
08/26/2009CN101515584A Diode chip integrated through MOS technological structure
08/26/2009CN101515583A Semiconductor device
08/26/2009CN101515582A Semiconductor device
08/26/2009CN101515570A Inverted t-shaped floating gate memory and method for fabricating the same
08/26/2009CN101515548A Field-effect transistors fabricated by wet chemical deposition
08/26/2009CN101515102A Flat display device and method for manufacturing the same