Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2010
06/03/2010US20100136738 Solid-state imaging device, solid-state imaging apparatus and methods for manufacturing the same
06/03/2010US20100136726 Led array
06/03/2010US20100135937 Metal oxide nanocrystals: preparation and uses
06/03/2010US20100135086 Method of operating non-volatile memory cell and memory device utilizing the method
06/03/2010US20100135080 Fabrication method and structure of semiconductor non-volatile memory device
06/03/2010US20100135061 Non-Volatile Memory Cell with Ferroelectric Layer Configurations
06/03/2010US20100135060 Memory device and storage apparatus
06/03/2010US20100135058 Magnetic memory, driving method thereof, and manufacturing method thereof
06/03/2010US20100134950 Capacitor
06/03/2010US20100134860 Mems device and optical switch
06/03/2010US20100134735 Photosensor and display device
06/03/2010US20100134709 Reflective liquid crystal display panel and device using same
06/03/2010US20100134183 Semiconductor device having electrode pad, and wireless circuit device including the semiconductor device
06/03/2010US20100134122 Substrate, substrate holding apparatus, analysis apparatus, program, detection system, semiconductor device, display apparatus, and semiconductor manufacturing apparatus
06/03/2010US20100133990 Organic light emitting device and manufacturing method thereof
06/03/2010US20100133663 Technique for the growth of planar semi-polar gallium nitride
06/03/2010US20100133658 Nitride semiconductor component layer structure on a group iv substrate surface
06/03/2010US20100133657 Group iii nitride semiconductor substrate production method, and group iii nitride semiconductor substrate
06/03/2010US20100133656 Method Using Multiple Layer Annealing Cap for Fabricating Group III-Nitride Semiconductor Device Structures and Devices Formed Thereby
06/03/2010US20100133655 Semiconductor device having a capacitance element and method of manufacturing the same
06/03/2010US20100133654 Method for manufacturing capacitor of semiconductor
06/03/2010US20100133653 Integrated circuit devices including passive device shielding structures and methods of forming the same
06/03/2010US20100133652 Semiconductor device and method of manufacturing the same
06/03/2010US20100133649 Contact efuse structure, method of making a contact efuse device containing the same, and method of making a read only memory containing the same
06/03/2010US20100133648 Microstructure device including a metallization structure with self-aligned air gaps between closely spaced metal lines
06/03/2010US20100133646 Self-aligned si rich nitride charge trap layer isolation for charge trap flash memory
06/03/2010US20100133645 Method for stacking and interconnecting integrated circuits
06/03/2010US20100133644 Bottom anode Schottky diode structure and method
06/03/2010US20100133631 Differential-pressure sensor system and corresponding production method
06/03/2010US20100133630 Method for producing a micromechanical component having a trench structure for backside contact
06/03/2010US20100133629 Integrated sensor including sensing and processing die mounted on opposite sides of package substrate
06/03/2010US20100133628 High-k gate electrode structure formed after transistor fabrication by using a spacer
06/03/2010US20100133619 Semiconductor device having a fin transistor and method for fabricating the same
06/03/2010US20100133618 Electrostatic discharge protection device and method for manufacturing the same
06/03/2010US20100133617 Fin field effect transistor
06/03/2010US20100133616 Methods of forming wiring to transistor and related transistor
06/03/2010US20100133615 Multiple gate transistor having fins with a length defined by the gate electrode
06/03/2010US20100133614 Multiple gate transistor having homogenously silicided fin end portions
06/03/2010US20100133613 Semiconductor memory device and manufacturing method thereof
06/03/2010US20100133612 Electronic device with asymmetric gate strain
06/03/2010US20100133611 Isolated transistor
06/03/2010US20100133610 Method of forming an integrated power device and structure
06/03/2010US20100133609 Methods of providing electrical isolation and semiconductor structures including same
06/03/2010US20100133608 Method for fabricating a semiconductor device
06/03/2010US20100133607 Recessed Channel Negative Differential Resistance-Based Memory Cell
06/03/2010US20100133606 Three-dimensional semiconductor memory device
06/03/2010US20100133605 Self aligned narrow storage elements for advanced memory device
06/03/2010US20100133604 Semiconductor Devices Having Gate Structures with Conductive Patterns of Different Widths and Methods of Fabricating Such Devices
06/03/2010US20100133602 Non-volatile memory cell with buried select gate, and method of making same
06/03/2010US20100133601 Semiconductor device
06/03/2010US20100133600 Semiconductor devices having increased sensing margin
06/03/2010US20100133599 Nonvolatile memory device and method for fabricating the same
06/03/2010US20100133598 Nonvolatile memory device and method for fabricating the same
06/03/2010US20100133597 Semiconductor memory device and manufacturing method thereof
06/03/2010US20100133595 Field effect transistor structure with abrupt source/drain junctions
06/03/2010US20100133594 Semiconductor structure and method of fabricating the same
06/03/2010US20100133593 Junction Field Effect Transistor Having a Double Gate Structure and Method of Making Same
06/03/2010US20100133591 Method for passivating a field-effect transistor
06/03/2010US20100133586 Heterojunction bipolar transistor and method of forming the same
06/03/2010US20100133583 Semiconductor integrated circuit
06/03/2010US20100133564 Method for Producing Semiconductor Components and Thin-Film Semiconductor Component
06/03/2010US20100133550 Stable power devices on low-angle off-cut silicon carbide crystals
06/03/2010US20100133549 Semiconductor Devices with Current Shifting Regions and Related Methods
06/03/2010US20100133548 Methods for improving the quality of epitaxially-grown semiconductor materials
06/03/2010US20100133547 Semiconductor Sensor
06/03/2010US20100133546 System and Method for Manufacturing Thick and Thin Film Devices Using a Donee Layer Cleaved From a Crystalline Donor
06/03/2010US20100133545 Thin film transistor and method of fabricating the same
06/03/2010US20100133544 Thin film transistor and fabricating method thereof
06/03/2010US20100133541 Thin film transistor array substrate, its manufacturing method, and liquid crystal display device
06/03/2010US20100133539 Thin-film transistor and method of manufacturing the same
06/03/2010US20100133538 Thin film transistor display panel and method of manufacturing the same
06/03/2010US20100133537 Micro electro mechanical device and manufacturing method thereof
06/03/2010US20100133533 Display device
06/03/2010US20100133531 Semiconductor device and manufacturing method thereof
06/03/2010US20100133530 Semiconductor device and method for manufacturing the same
06/03/2010US20100133529 Thin light-emitting devices and fabrication methods
06/03/2010US20100133528 Capacitive gas sensor and method of fabricating the same
06/03/2010US20100133525 Thin film transistor, display unit, and method of manufacturing thin film transistor
06/03/2010US20100133512 Method for fabricating carbon nanotube transistors on a silicon or soi substrate
06/03/2010US20100133511 Integrated Circuits Based on Aligned Nanotubes
06/03/2010US20100133510 Bio-sensor chip
06/03/2010US20100133509 Semiconductor nanowire and its manufacturing method
06/03/2010US20100133501 Switching element and method for manufacturing switching element
06/03/2010US20100133497 Semiconductor device and method for manufacturing the same
06/03/2010US20100133494 Use of lacunar spinels with tetrahedral aggregates of a transition element of the am4x8 type with an electronic data rewritable non volatile memory, and corresponding material
06/03/2010US20100133102 Sensors employing combinatorial artificial receptors
06/03/2010US20100132788 Pyrogenic zinc oxide-comprising composite of layers and field-effect transistor comprising this composite
06/03/2010US20100132772 Method for manufacturing nano-array electrode and photoelectric conversion device using same
06/03/2010US20100132770 Device including semiconductor nanocrystals and a layer including a doped organic material and methods
06/02/2010EP2192631A1 Process for production of desubstituted compounds, organic semiconductor film and process for production of the film
06/02/2010EP2192617A2 Quantum Semiconductor Device and Method for Fabricating the Same
06/02/2010EP2192616A2 Quantum semiconductor device and method for fabricating the same
06/02/2010EP2192441A2 Active matrix substrate, method of manufacturing the same, and image sensor incorporation the same
06/02/2010EP2192211A1 Stable Power Devices on Low-Angle Off-Cut Silicon Carbide Crystals
06/02/2010EP2191489A2 Backplane structures for solution processed electronic devices
06/02/2010EP1946379B1 Replacement metal gate transistors with reduced gate oxide leakage
06/02/2010DE10203393B4 Halbleiterbauelement mit einem Halbleiterkörper auf der Basis eines Nitrid-Verbindungshalbleiters Semiconductor component having a semiconductor body on the basis of a nitride compound semiconductor,
06/02/2010DE102009031657A1 Aufbau und Verfahren zum Ausbilden eines Trench-Fet mit abgeschirmtem Gate mit einem Zwischenelektroden-Dielektrikum mit einem Low-K-Dielektrikum darin Structure and method for forming a trench FET shielded gate with an inter-electrode dielectric with a low-K dielectric is
06/02/2010DE102009025271A1 Halbleiterbauelement mit verschiedenen Finnen-Breiten A semiconductor device having different fin widths
06/02/2010DE102008059648A1 Gateelektrodenstruktur mit großem ε, die nach der Transistorherstellung unter Anwendung eines Abstandshalters gebildet wird Gate electrode structure with large ε, which is formed after the transistor production using a spacer
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