H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2011
12/01/2011	US20110291188 Strained finfet
12/01/2011	US20110291187 Double Diffused Drain Metal-Oxide-Semiconductor Devices with Floating Poly Thereon and Methods of Manufacturing The Same
12/01/2011	US20110291186 Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts
12/01/2011	US20110291185 Semiconductor Device Having an Edge Termination Structure and Method of Manufacture Thereof
12/01/2011	US20110291184 Semiconductor structure and method for manufacturing the same
12/01/2011	US20110291183 Power semiconductor device having low gate input resistance and manufacturing method thereof
12/01/2011	US20110291182 Semiconductor device and method for forming the same
12/01/2011	US20110291181 Semiconductor device and method for manufacturing same
12/01/2011	US20110291180 Angled ion implantation in a semiconductor device
12/01/2011	US20110291179 Scalable Interpoly Dielectric Stacks With Improved Immunity to Program Saturation
12/01/2011	US20110291178 Semiconductor device and method for manufacturing same
12/01/2011	US20110291177 Nonvolatile memory device and method for fabricating the same
12/01/2011	US20110291176 Non-volatile memory device and method for fabricating the same
12/01/2011	US20110291175 Non-Volatile Memory Devices and Methods of Manufacturing the Same
12/01/2011	US20110291174 Nonvolatile semiconductor memory device and method of manufacturing the same
12/01/2011	US20110291173 Semiconductor device and manufacturing method thereof
12/01/2011	US20110291172 Semiconductor device and method of fabricating the same
12/01/2011	US20110291171 Varactor
12/01/2011	US20110291169 Reduced corner leakage in soi structure and method
12/01/2011	US20110291167 Semiconductor device
12/01/2011	US20110291163 Reduction of Defect Rates in PFET Transistors Comprising a Si/Ge Semiconductor Material Formed by Epitaxial Growth
12/01/2011	US20110291160 Field effect transistor
12/01/2011	US20110291159 Stress release structures for metal electrodes of semiconductor devices
12/01/2011	US20110291157 Lateral insulated gate bipolar transistor
12/01/2011	US20110291112 Normally-off integrated jfet power switches in wide bandgap semiconductors and methods of making
12/01/2011	US20110291111 Semiconductor device and semiconductor device manufacturing method
12/01/2011	US20110291110 Silicon carbide semiconductor device and method of manufacturing the same
12/01/2011	US20110291107 Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making
12/01/2011	US20110291106 Power semiconductor device
12/01/2011	US20110291104 Smoothing method for semiconductor material and wafers produced by same
12/01/2011	US20110291100 Device and method for fabricating thin semiconductor channel and buried strain memorization layer
12/01/2011	US20110291098 Organic el display device, mother substrate of organic el display device, and method of testing organic el display device
12/01/2011	US20110291097 Tft array substrate, and liquid crystal display panel
12/01/2011	US20110291093 Semiconductor device and manufacturing method thereof
12/01/2011	US20110291092 Field effect transistor and method for manufacturing the same
12/01/2011	US20110291089 Method for manufacturing semiconductor device
12/01/2011	US20110291075 Field effect transistor, method for manufacturing the same, and biosensor
12/01/2011	US20110291068 Field effect transistor manufacturing method, field effect transistor, and semiconductor graphene oxide manufacturing method
12/01/2011	US20110291012 Thermoelectric conversion device, and radiation detector and radiation detection method using the same
12/01/2011	US20110290023 Element structure, inertia sensor, and electronic device
12/01/2011	DE202011100820U1 Leistungshalbleiter Power semiconductor
12/01/2011	DE112004001117B4 Halbleiterbauelement und Verfahren zur Herstellung A semiconductor device and method for producing
12/01/2011	DE102011100241A1 Nitride Semiconductor Device Nitride Semiconductor Device
12/01/2011	DE102011076269A1 Halbleiterbauelement Semiconductor device
12/01/2011	DE102011076243A1 Halbleitervorrichtung Semiconductor device
12/01/2011	DE102010029527A1 Selbstjustierender Transistor mit Mehrfachgate, der auf einem Vollsubstrat ausgebildet ist Self-aligning multi-gate transistor which is formed on a solid substrate
12/01/2011	DE102005051994B4 Verformungsverfahrenstechnik in Transistoren auf Siliziumbasis unter Anwendung eingebetteter Halbleiterschichten mit Atomen mit einem großen kovalenten Radius Deformation processing technology in silicon-based transistors by using semiconductor layers with embedded atoms with a large covalent radius
12/01/2011	DE102004059629B4 Halbleitervorrichtung vom Typ mit dielektrischer Isolierung und Verfahren zu deren Herstellung A semiconductor device of the type with dielectric isolation, and methods for their preparation
11/2011
11/30/2011	EP2390907A1 Trench structure in multilayer wafer
11/30/2011	EP2390671A2 Physical quantity sensor and electronic apparatus
11/30/2011	EP2389688A1 Asymmetric junction field effect transistor and method of manufacturing the same
11/30/2011	EP2389683A2 Methods of enhancing performance of field-effect transistors and field-effect transistors made thereby
11/30/2011	EP1679752B1 Conductive thin film and thin-film transistor
11/30/2011	EP1355362B1 Semiconductor device
11/30/2011	EP1266406B1 Trench gate DMOS field-effect transistor
11/30/2011	CN202058741U 低正向导通压降的肖特基二极管 Low forward voltage drop Schottky diode
11/30/2011	CN202058740U 可降低正向导通压降的肖特基二极管 Can reduce the forward voltage drop Schottky diode
11/30/2011	CN202058739U 驱动芯片的版图结构 Driver chip layout structure
11/30/2011	CN202058738U Cmos硅器件 Cmos silicon devices
11/30/2011	CN202058737U 具有p埋层的横向沟道soi ligbt器件单元 Lateral channel soi ligbt devices unit has p buried layer
11/30/2011	CN202058736U Multilayer film structure used for preparing polycrystalline silicon thin film
11/30/2011	CN202058735U 陶瓷衬底的氮化镓基芯片 The gallium nitride-based ceramic substrate chip
11/30/2011	CN202057936U 阵列基板及液晶面板 Array substrate and liquid crystal panel
11/30/2011	CN1659710B 在绝缘层上覆硅基板中的掺杂区域 On the insulating layer overlying the silicon substrate doped region
11/30/2011	CN1573844B 图像显示装置 The image display apparatus
11/30/2011	CN102265644A 平衡信号输出型传感器 Balanced signal output sensor
11/30/2011	CN102265474A 氮化物半导体装置及其制造方法 The nitride semiconductor device and manufacturing method thereof
11/30/2011	CN102265405A 金属氧化物半导体薄膜晶体管中的稳定性增强 Metal oxide semiconductor thin film transistor in enhanced stability
11/30/2011	CN102265404A 功率用半导体装置 Power semiconductor device
11/30/2011	CN102265403A 包括具有隔离沟道的增强型和耗尽型fet的双极性/双fet结构 Includes an enhanced channel isolation and depletion-mode fet bipolar / double fet structure
11/30/2011	CN102265402A 用于soi射频开关的偏压生成电路 Bias voltage generation circuit for RF switches soi
11/30/2011	CN102265401A 包括可独立电寻址区段的发光器件 The light emitting device may include independently electrically addressable segments
11/30/2011	CN102265392A 半导体存储单元及其制造方法以及半导体存储装置 The semiconductor memory cell and method for manufacturing a semiconductor memory device, and
11/30/2011	CN102265380A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
11/30/2011	CN102263140A 一种塑封功率二极管及其制造工艺 One kind of plastic power diode and its manufacturing process
11/30/2011	CN102263139A 一种改进的混合整流二极管结构 An improved hybrid rectifier diode structure
11/30/2011	CN102263138A 新型结构的保护用二极管 The new structure protection diode
11/30/2011	CN102263137A 一种混合型非易失存储单元及其制作方法 A hybrid non-volatile memory cell and its production method
11/30/2011	CN102263136A 浮栅场效应晶体管及其制造方法 Floating gate field effect transistor and manufacturing method thereof
11/30/2011	CN102263135A 主动元件及具有此主动元件的电泳显示器 Active components and active components with this electrophoretic display
11/30/2011	CN102263134A 一种双极性薄膜晶体管及其制备方法 A bipolar thin film transistor and its preparation method
11/30/2011	CN102263133A 低栅极电荷低导通电阻深沟槽功率mosfet器件及其制造方法 Low gate charge low on-resistance deep trench power mosfet device and manufacturing method
11/30/2011	CN102263132A 半导体结构及其制造方法 Semiconductor structure and manufacturing method
11/30/2011	CN102263131A 一种半导体器件及其形成方法 A semiconductor device and method of forming
11/30/2011	CN102263130A 降低ccd暗电流的ccd单元结构 Ccd ccd reduce dark current unit structure
11/30/2011	CN102263129A 低栅电容的绝缘栅双极型晶体管 Low gate capacitance of an insulated gate bipolar transistor
11/30/2011	CN102263128A 一种小体积高耐压igbt A small-volume high-pressure igbt
11/30/2011	CN102263127A 一种mos型功率器件及其制造方法 One kind mos power devices and manufacturing method
11/30/2011	CN102263126A 短路型闸流晶体管 Short circuit type thyristors
11/30/2011	CN102263125A 一种横向扩散金属氧化物功率mos器件 One kind of laterally diffused metal oxide power mos devices
11/30/2011	CN102263124A 半导体器件 Semiconductor devices
11/30/2011	CN102263108A 非易失性存储器件及其制造方法 Non-volatile memory device and manufacturing method thereof
11/30/2011	CN102263107A 一种半导体功率器件及其制造方法 A semiconductor power device and manufacturing method thereof
11/30/2011	CN102263104A Mos结构的esd保护器件 Esd protection devices Mos structure
11/30/2011	CN102263102A 一种用于静电防护的反向二极管触发可控硅 Reverse ESD protection diodes for triggering SCR
11/30/2011	CN102263087A 半导体元件及其制作方法 Semiconductor device and manufacturing method thereof
11/30/2011	CN102263061A 形成在块体衬底上的自对准多栅极晶体管 Formed on the block substrate self-aligned multi-gate transistor
11/30/2011	CN102263053A 半导体装置、无缝填隙的方法与浅沟槽隔离结构的制法 Semiconductor device, method and seamless interstitial shallow trench isolation structure is prepared by
11/30/2011	CN102263035A 形成含氧半导体薄膜晶体管的方法 Oxygen-containing method of forming a semiconductor thin film transistor
11/30/2011	CN102263034A Bcd工艺中的高压mos晶体管结构及其制造方法 Bcd high pressure process mos transistor structure and manufacturing method thereof

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