H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2011
12/28/2011	CN102301481A 欧姆电极及其形成方法 Ohmic electrode and method for forming
12/28/2011	CN102301480A 纳米线网格器件及其制备方法 Nanowire mesh device and its preparation method
12/28/2011	CN102301479A 基底表面上的纳米线、其制造方法及应用 Nanowires on the substrate surface, its manufacturing method and application
12/28/2011	CN102301452A 半导体基板的制造方法及半导体基板 The method of manufacturing a semiconductor substrate and a semiconductor substrate
12/28/2011	CN102299184A Mim电容器及其制造方法 Mim capacitor and manufacturing method
12/28/2011	CN102299183A Jfet晶体管及其形成方法 Jfet transistor and method of forming
12/28/2011	CN102299182A 薄膜晶体管及其制造方法 A thin film transistor and manufacturing method thereof
12/28/2011	CN102299181A Mos晶体管及其制造方法 Mos transistor and manufacturing method thereof
12/28/2011	CN102299180A 包含单元区和具有高击穿电压结构的外围区的半导体器件 The semiconductor device includes a cell region and a high breakdown voltage structure of the peripheral region
12/28/2011	CN102299179A 横向扩散金属氧化物半导体组件 LDMOS components
12/28/2011	CN102299178A 一种半导体结构及其制备方法 A semiconductor structure and method of preparation
12/28/2011	CN102299177A 一种接触的制造方法以及具有该接触的半导体器件 A method of manufacturing a semiconductor device having a contact and the contact
12/28/2011	CN102299176A 一种铁电薄膜栅增强型GaN异质结场效应晶体管 A ferroelectric film gate enhanced GaN heterostructure field-effect transistors
12/28/2011	CN102299175A InAlN/GaN异质结有源区的埋层结构和激活方法 InAlN / GaN heterostructure buried layer structure and method of activation of the active region
12/28/2011	CN102299174A 用于高功率的、基于GaN的FET的布图设计 For high power, GaN-based FET layout-design
12/28/2011	CN102299173A 一种超结纵向双扩散n型金属氧化物半导体管 An ultra-n junction vertical double diffused metal oxide semiconductor
12/28/2011	CN102299172A 功率用半导体装置 Power semiconductor device
12/28/2011	CN102299171A 与cmos工艺兼容的硅纳米线器件及其制作方法 Silicon nanowire devices compatible with cmos technology and production methods
12/28/2011	CN102299170A 一种砷化镓赝配高电子迁移率晶体管外延材料 One kind of GaAs pseudomorphic high electron mobility transistor epitaxial materials
12/28/2011	CN102299169A 便于去除蓝宝石衬底的外延结构 Facilitate removal of the epitaxial structure of the sapphire substrate
12/28/2011	CN102299168A 功率用半导体装置 Power semiconductor device
12/28/2011	CN102299157A 分栅式闪存及其制造方法 Sub-gate type flash memory and manufacturing method thereof
12/28/2011	CN102299156A 一种半导体器件及其制造方法 A semiconductor device and manufacturing method thereof
12/28/2011	CN102299155A 一种半导体器件及其制造方法 A semiconductor device and manufacturing method thereof
12/28/2011	CN102299154A 半导体结构及其制作方法 The semiconductor structure and method of making
12/28/2011	CN102299153A 具有低栅极输入电阻的功率半导体组件及其制作方法 Power semiconductor components and their production methods with low gate input resistance
12/28/2011	CN102299131A 一种sod-123封装结构的二极管 One kind of sod-123 diode package structure
12/28/2011	CN102299110A 一种半导体器件的形成方法及其半导体器件 The method for forming a semiconductor device and a semiconductor device
12/28/2011	CN102299109A 半导体功率组件与其制作方法 Semiconductor power component and its manufacturing method
12/28/2011	CN102299093A 制备带有绝缘埋层的半导体衬底的方法以及半导体衬底 The method of preparing a semiconductor substrate with a buried insulating layer and the semiconductor substrate
12/28/2011	CN102299092A 一种半导体器件及其形成方法 A semiconductor device and method of forming
12/28/2011	CN102299077A 一种半导体器件及其制造方法 A semiconductor device and manufacturing method thereof
12/28/2011	CN102299074A 一种半导体器件及其形成方法 A semiconductor device and method of forming
12/28/2011	CN102299073A Vdmos器件及其制作方法 Vdmos device and manufacturing method thereof
12/28/2011	CN102299072A 沟槽型超级结器件的制作方法及得到的器件 Trench method of making super junction devices and the resulting device
12/28/2011	CN102299071A 一种提高AlGaN/GaN HEMT频率特性的方法 Method for improving AlGaN / GaN HEMT frequency characteristic of a
12/28/2011	CN102299069A 制造垂直pin型二极管的方法及垂直pin型二极管 The method of fabricating a vertical pin diodes and vertical pin diode
12/28/2011	CN102296270A 掺杂氧化锌半导体材料及其制备方法与应用 Zinc oxide semiconductor material and its preparation method and application doping
12/28/2011	CN102064104B Method for manufacturing T-shaped grid of GaN microwave device
12/28/2011	CN102005481B 一种t型栅结构的低功耗隧穿场效应晶体管 One kind of t-type gate structure low power tunneling field effect transistor
12/28/2011	CN101884109B 包含绝缘层的氧化物半导体器件和使用该器件的显示装置 Oxide semiconductor device comprises an insulating layer and a display device using the device
12/28/2011	CN101855742B 有机电致发光器件和有机电致发光显示面板及其制造方法 Organic electroluminescent devices and have the panel and method of manufacturing an organic electroluminescent display
12/28/2011	CN101826550B ABO<sub>3</sub>/TiO<sub>2</sub>/MgO/Ⅲ-V族氮化物半导体异质结构及制备方法 ABO <sub> 3 </ sub> / TiO <sub> 2 </ sub> / MgO / Ⅲ-V nitride semiconductor heterostructures and preparation methods
12/28/2011	CN101783352B 一种非易失性存储器及其设计方法 A non-volatile memory and design method
12/28/2011	CN101719509B 垂直双扩散金属氧化物半导体场效应管 Vertical double diffused metal oxide semiconductor field effect transistor
12/28/2011	CN101714557B Y方向没有od间隙影响的标准单元 Y direction does not affect the standard cell gap od
12/28/2011	CN101714556B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/28/2011	CN101517752B 具有浮岛的结势垒肖特基二极管 Having a floating island junction barrier Schottky diode
12/28/2011	CN101512754B 用来形成纳米结构单层的方法和器件，以及包括该单层的器件 For forming a nanostructure monolayer methods and devices, as well as the single-layer device comprising
12/28/2011	CN101471266B 半导体器件的制造方法 The method of manufacturing a semiconductor device
12/28/2011	CN101461063B 基板检查及修正装置、以及基板评估系统 Board inspection and correction device, as well as board evaluation system
12/28/2011	CN101447763B 谐振隧穿结构 Resonant tunneling structure
12/28/2011	CN101375398B 纳米线隧穿晶体管 Nanowire tunneling transistor
12/28/2011	CN101361199B 用于固态光发射器的工程结构 Engineering structures for solid-state light emitters
12/28/2011	CN101359694B 闪存及其制造方法 Flash memory and manufacturing method thereof
12/28/2011	CN101309863B 半导体薄膜及其制造方法以及薄膜晶体管、有源矩阵驱动显示面板 A semiconductor thin film and the thin film transistor and its manufacturing method, an active matrix display panel is driven
12/27/2011	USRE43042 Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns
12/27/2011	US8085511 Magnetoresistance effect element having resistance adjusting layer and thin-film insertion layer
12/27/2011	US8085354 Pixel structure with semiconductor of top-gate TFT extended over electrodes and liquid crystal display panel
12/27/2011	US8085321 Method and apparatus for providing a rolling double reset timing for global storage in image sensors
12/27/2011	US8084871 Redistribution layer enhancement to improve reliability of wafer level packaging
12/27/2011	US8084866 Microelectronic devices and methods for filling vias in microelectronic devices
12/27/2011	US8084858 Metal wiring structures for uniform current density in C4 balls
12/27/2011	US8084852 Hybrid integrated circuit device, and method for fabricating the same, and electronic device
12/27/2011	US8084849 Integrated circuit package system with offset stacking
12/27/2011	US8084845 Subresolution silicon features and methods for forming the same
12/27/2011	US8084844 Semiconductor device
12/27/2011	US8084843 N well implants to separate blocks in a flash memory device
12/27/2011	US8084842 Thermally stabilized electrode structure
12/27/2011	US8084840 Interposer including air gap structure, methods of forming the same, semiconductor device including the interposer, and multi-chip package including the interposer
12/27/2011	US8084839 Circuit board having conductive shield member and semiconductor package using the same
12/27/2011	US8084835 Non-uniform switching based non-volatile magnetic based memory
12/27/2011	US8084832 Semiconductor device
12/27/2011	US8084828 Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methods
12/27/2011	US8084827 Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses
12/27/2011	US8084825 Trilayer resist scheme for gate etching applications
12/27/2011	US8084824 Metal gate transistor and method for fabricating the same
12/27/2011	US8084822 Enhanced stress-retention fin-FET devices and methods of fabricating enhanced stress retention fin-FET devices
12/27/2011	US8084818 High mobility tri-gate devices and methods of fabrication
12/27/2011	US8084817 Semiconductor device and method for fabricating the same
12/27/2011	US8084816 Semiconductor module
12/27/2011	US8084815 Superjunction semiconductor device
12/27/2011	US8084814 Semiconductor device and method of producing the same
12/27/2011	US8084813 Short gate high power MOSFET and method of manufacture
12/27/2011	US8084812 Bidirectional semiconductor device, method of fabricating the same, and semiconductor device incorporating the same
12/27/2011	US8084811 Power devices with super junctions and associated methods manufacturing
12/27/2011	US8084810 Fabrication method and structure of semiconductor non-volatile memory device
12/27/2011	US8084809 Nonvolatile semiconductor memory device including pillars buried inside through holes
12/27/2011	US8084808 Zirconium silicon oxide films
12/27/2011	US8084807 Nonvolatile semiconductor memory device and method for manufacturing same
12/27/2011	US8084805 Three-dimensional microelectronic devices including repeating layer patterns of different thicknesses
12/27/2011	US8084804 Capacitor with zirconium oxide and method for fabricating the same
12/27/2011	US8084803 Capacitor and method of manufacturing the same
12/27/2011	US8084802 Nonvolatile semiconductor memory
12/27/2011	US8084800 Semiconductor device and a method of manufacturing the same
12/27/2011	US8084793 Microwave semiconductor device using compound semiconductor and method for manufacturing the same
12/27/2011	US8084792 Electric component
12/27/2011	US8084790 Image sensing device and packaging method thereof
12/27/2011	US8084789 Phase change memory with ovonic threshold switch
12/27/2011	US8084788 Method of forming source and drain of a field-effect-transistor and structure thereof

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